NTJS3151PT2G [ONSEMI]
Trench Power MOSFET 12 V, 3.3 A, Single P−Channel, ESD Protected SC−88; 沟槽功率MOSFET的12 V ， 3.3 A单P沟道， ESD保护SC- 88
| 型号： | NTJS3151PT2G |
| 厂家： | 
ONSEMI |
| 描述： | Trench Power MOSFET 12 V, 3.3 A, Single P−Channel, ESD Protected SC−88 |
| 文件： | 总6页 (文件大小：134K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTJS3151P
Trench Power MOSFET
12 V, 3.3 A, Single P−Channel,
ESD Protected SC−88
Features
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• Leading Trench Technology for Low R
Extending Battery Life
DS(ON)
• SC−88 Small Outline (2x2 mm, SC70−6 Equivalent)
• Gate Diodes for ESD Protection
V
R
Typ
I Max
D
(BR)DSS
DS(on)
45 mW @ −4.5 V
67 mW @ −2.5 V
• Pb−Free Packages are Available
−12 V
−3.3 A
Applications
133 mW @ −1.8 V
• High Side Load Switch
• Cell Phones, Computing, Digital Cameras, MP3s and PDAs
SC−88 (SOT−363)
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
D
D
1
2
3
6
D
D
S
J
Parameter
Drain−to−Source Voltage
Symbol
Value Units
V
DSS
−12
12
V
V
A
5
4
Gate−to−Source Voltage
V
GS
Continuous Drain
Current (Note 1)
Steady T = 25 °C
I
D
−2.7
−2.0
−3.3
0.625
A
State
G
T = 85 °C
A
t ≤ 5 s
T = 25 °C
A
Top View
D
Power Dissipation
(Note 1)
Steady T = 25 °C
P
D
W
A
State
Pulsed Drain Current
t = 10 ms
p
I
−8.0
A
3 kW
DM
G
Operating Junction and Storage Temperature
T ,
STG
−55 to
150
°C
J
T
Source Current (Body Diode)
I
S
−0.8
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
260
°C
T
L
S
THERMAL RESISTANCE RATINGS (Note 1)
MARKING DIAGRAM &
PIN ASSIGNMENT
Parameter
Symbol
Max
200
141
102
Units
D
D
S
Junction−to−Ambient – Steady State
Junction−to−Ambient − t ≤ 5 s
Junction−to−Lead – Steady State
R
°C/W
q
JA
6
1
R
q
JA
TJ M G
SC−88/SOT−363
CASE 419B
R
q
JL
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size
STYLE 28
1
D
D
G
TJ
M
G
= Device Code
= Date Code
= Pb−Free Package
(Cu area = 1.127 in sq [1 oz] including traces).
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
March, 2006 − Rev. 2
NTJS3151/D
NTJS3151P
ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise stated)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = −250 mA
−12
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
V
/T
J
10
mV/°C
(BR)DSS
Temperature Coefficient
Zero Gate Voltage Drain Current
I
T = 25°C
−1.0
mA
DSS
J
V
= −9.6 V,
DS
GS
V
= 0 V
T = 125°C
J
−2.5
Gate−to−Source Leakage Current
I
V
= 0 V, V =
GS
4.5 V
12 V
1.5
10
mA
GSS
DS
V
= 0 V, V
=
mA
DS
GS
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
V
GS
= V , I = 100 mA
−0.40
V
GS(TH)
DS
D
Negative Threshold Temperature
Coefficient
V
/T
3.4
mV/°C
GS(TH)
J
Drain−to−Source On Resistance
R
V
= −4.5 V, I = −3.3 A
45
67
60
90
mW
DS(on)
GS
GS
GS
D
V
V
= −2.5 V, I = −2.9 A
D
= −1.8 V, I = −1.0 A
133
15
160
D
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
FS
V
= −10 V, I = −3.3 A
S
GS
D
C
850
170
110
8.6
pF
ISS
V
= 0 V, f = 1.0 MHz,
DS
GS
Output Capacitance
C
C
OSS
RSS
V
= −12 V
Reverse Transfer Capacitance
Total Gate Charge
Q
nC
G(TOT)
V
GS
= −4.5 V, V = −5.0 V,
DS
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Q
Q
1.3
GS
I
= −3.3 A
D
2.2
GD
R
3000
W
G
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
t
0.86
1.5
3.5
3.9
ms
d(ON)
t
r
V
= −4.5 V, V = −6.0 V,
DD
GS
D
I
= −1.0 A, R = 6.0 W
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS (Note 2)
Forward Diode Voltage
V
SD
T = 25°C
−0.85
−0.7
−1.2
V
J
V
S
= 0 V,
GS
I = −3.3 A
T = 125°C
J
2. Pulse Test: pulse width ≤ 300ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTJS3151P
TYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted)
J
8
6
4
8
T = 25°C
V
DS
≤ −12 V
V
= −4.5 V
= −3.4 V
J
GS
V
GS
6
4
−2 V
−2.4 V
125°C
2
0
2
0
−1.6 V
25°C
−1.4 V
−1.2 V
T = −55°C
J
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
−V , GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.1
0.5
T = 25°C
J
V
GS
= −4.5 V
V
GS
= −1.8 V
0.4
0.075
0.05
0.025
0
T = 125°C
J
0.3
0.2
T = 25°C
J
T = −55°C
J
V
= −2.5 V
= −4.5 V
GS
0.1
0
V
GS
0.5
1.5
2.5
3.5
4.5
5.5
6.5
7.5
0.5
1.5
2.5
3.5
4.5
5.5
6.5
7.5
−I DRAIN CURRENT (AMPS)
D,
−I DRAIN CURRENT (AMPS)
D,
Figure 4. On−Resistance vs. Drain Current and
Figure 3. On−Resistance vs. Drain Current and
Gate Voltage
Temperature
2.0
100000
10000
I
V
= −3.3 A
V
GS
= 0 V
D
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
= −4.5 V
GS
T = 150°C
J
T = 125°C
J
1000
100
0.2
0
−50 −25
0
25
50
75
100
125 150
0
2
4
6
8
10
12
−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTJS3151P
TYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted)
J
1600
1400
1200
1000
800
600
400
200
0
4.5
QT
T = 25°C
J
4
V
GS
= 0 V
3.5
3
2.5
2
C
iss
Q1
Q2
1.5
1
C
oss
I
= −3.3 A
D
0.5
0
T = 25°C
J
C
rss
0
2
4
6
8
10
12
0
2
4
6
8
10
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Gate Charge
10000
4
V
GS
= 0 V
T = 25°C
J
t
f
t
t
d(off)
3
2
t
r
1000
100
d(on)
1
0
V
= −6.0 V
= −1.0 A
= −4.5 V
DD
I
D
V
GS
1
10
R , GATE RESISTANCE (OHMS)
100
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
0.8 0.9
−V , SOURCE−TO−DRAIN VOLTAGE (VOLTS)
SD
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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4
NTJS3151P
ORDERING INFORMATION
Device
†
Package
Shipping
NTJS3151PT1
SC−88
3000 Tape & Reel
3000 Tape & Reel
NTJS3151PT1G
SC−88
(Pb−Free)
NTJS3151PT2
SC−88
3000 Tape & Reel
3000 Tape & Reel
NTJS3151PT2G
SC−88
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTJS3151P
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE W
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
D
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
e
MILLIMETERS
DIM MIN NOM MAX
0.80
INCHES
NOM MAX
1.10 0.031 0.037 0.043
0.10 0.000 0.002 0.004
0.008 REF
A3
MIN
A
0.95
0.05
6
1
5
2
4
3
A1 0.00
C
A3
0.20 REF
0.21
0.14
2.00
1.25
H
−E−
E
b
C
D
E
e
0.10
0.10
1.80
1.15
0.30 0.004 0.008 0.012
0.25 0.004 0.005 0.010
2.20 0.070 0.078 0.086
1.35 0.045 0.049 0.053
0.026 BSC
0.30 0.004 0.008 0.012
2.20 0.078 0.082 0.086
0.65 BSC
L
L
0.10
2.00
0.20
2.10
b 6 PL
H
E
M
M
E
STYLE 28:
0.2 (0.008)
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
A
SOLDERING FOOTPRINT*
A1
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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NTJS3151P/D
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