NTK4401NT1G [ONSEMI]

20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, CASE 631AA-01, 3 PIN;
NTK4401NT1G
型号: NTK4401NT1G
厂家: ONSEMI    ONSEMI
描述:

20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, CASE 631AA-01, 3 PIN

开关 光电二极管 晶体管
文件: 总4页 (文件大小:34K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
NTK4401N  
Product Preview  
Small Signal MOSFET  
20 V, Single N−Channel, SOT−723  
Gate ESD Protection  
http://onsemi.com  
Features  
Low Gate Charge for Fast Switching  
Small Footprint (1.2 x 1.2 mm)  
ESD Protected Gate  
V
R
TYP  
I Max  
D
(BR)DSS  
DS(on)  
1.5 W @ 4.5 V  
2.5 W @ 2.5 V  
TBD  
20 V  
Pb−Free Package for Green Manufacturing (G Suffix)  
Applications  
DC−DC Conversion  
Level Shift  
SOT−723 (3−LEAD)  
Power Management Load Switch  
G
S
1
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
3
D
Parameter  
Drain−to−Source Voltage  
Symbol  
Value Units  
V
DSS  
20  
V
V
Gate−to−Source Voltage  
V
GS  
±10  
TBD  
2
Continuous Drain  
Current (Note 1)  
Steady T = 25 °C  
State  
I
D
mA  
A
Top View  
Power Dissipation  
(Note 1)  
Steady T = 25 °C  
State  
P
300  
714  
mW  
A
D
MARKING DIAGRAM  
Pulsed Drain Current  
tp = 10 µs  
I
mA  
DM  
3
Operating Junction and Storage Temperature  
T , T  
−55 to  
150  
°C  
J
STG  
2
TBD M  
1
Source Current (Body Diode)  
I
238  
260  
A
S
CASE 631AA  
SOT−723  
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 s)  
°C  
T
L
TBD  
M
= Specific Device Code  
= Date Code  
THERMAL RESISTANCE RATINGS (Note 1)  
Parameter  
Symbol  
Max  
Units  
ORDERING INFORMATION  
Junction−to−Ambient – Steady State  
R
TBD  
°C/W  
θ
JA  
Device  
Package  
Shipping  
1. Surface−mounted on FR4 board using 1sq pad size  
NTK4401NT1  
SOT−723  
8000 Units/Reel  
8000 Units/Reel  
(Cu area = 1.127 in sq [1 oz] including traces)  
SOT−723  
(Pb−Free)  
This document contains information on a product under development.  
ON Semiconductor reserves the right to change or discontinue this  
product without notice.  
NTK4401NT1G  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
This document, and the information contained herein, is CONFIDENTIAL AND  
PROPRIETARY and the property of Semiconductor Components Industries,  
LLC., dba ON Semiconductor. It shall not be used, published, disclosed or  
disseminated outside of the Company, in whole or in part, without the written  
permission of ON Semiconductor. Reverse engineering of any or all of the  
information contained herein is strictly prohibited.  
E 2003, SCILLC. All Rights Reserved.  
Semiconductor Components Industries, LLC, 2003  
1
Publication Order Number:  
November, 2003 − Rev. P0  
NTK4401N/D  
 
CONFIDENTIAL AND PROPRIETARY  
NOT FOR PUBLIC RELEASE  
NTK4401N  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Drain−to−Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate−to−Source Leakage Current  
ON CHARACTERISTICS (Note 2)  
Gate Threshold Voltage  
V
V
= 0 V, I = 100 µA  
20  
V
(BR)DSS  
GS  
D
I
V
= 0 V, V = 20 V  
1.0  
µA  
µA  
DSS  
GSS  
GS  
DS  
I
V
DS  
= 0 V, V = ±10 V  
±100  
GS  
V
V
= V , I = 100 µA  
0.5  
1.0  
1.5  
2.2  
80  
1.5  
3.0  
3.5  
V
GS(TH)  
GS  
GS  
GS  
DS  
DS  
D
Drain−to−Source On Resistance  
R
V
V
V
= 4.5 V, I = 10 mA  
DS(on)  
D
= 2.5 V, I = 10 mA  
D
Forward Transconductance  
CHARGES AND CAPACITANCES  
Input Capacitance  
g
FS  
= 3.0 V, I = 10 mA  
S
D
C
V
GS  
= 0 V, f = 1.0 MHz,  
11.5  
10  
pF  
ISS  
V
DS  
= 5.0 V  
Output Capacitance  
C
OSS  
RSS  
Reverse Transfer Capacitance  
SWITCHING CHARACTERISTICS (Note 3)  
C
3.5  
Turn−On Delay Time  
Rise Time  
td  
V
= 4.5 V, V = 5.0 V,  
13  
15  
98  
60  
ns  
(ON)  
GS  
DS  
I
D
= 10 mA, R = 10 Ω  
G
tr  
Turn−Off Delay Time  
Fall Time  
td  
(OFF)  
tf  
DRAIN−SOURCE DIODE CHARACTERISTICS  
Forward Diode Voltage  
V
SD  
V
GS  
= 0 V, I = 10 mA  
0.66  
0.8  
V
S
2. Pulse Test: pulse width 300µs, duty cycle 2%.  
3. Switching characteristics are independent of operating junction temperatures.  
http://onsemi.com  
2
 
CONFIDENTIAL AND PROPRIETARY  
NOT FOR PUBLIC RELEASE  
NTK4401N  
PACKAGE DIMENSIONS  
SOT−723  
CASE 631AA−01  
ISSUE O  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD  
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM  
THICKNESS OF BASE MATERIAL.  
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD  
FLASH, PROTRUSIONS OR GATE BURRS.  
−X−  
E
D
A
b1  
−Y−  
3
HE  
MILLIMETERS  
INCHES  
NOM  
L
1
2
DIM MIN  
NOM  
−−−  
0.22  
0.32  
0.13  
MAX  
0.5  
MIN  
−−−  
MAX  
0.02  
A
b
b1  
C
D
E
e
H E  
L
−−−  
0.17  
0.27  
0.10  
1.15  
0.75  
−−−  
0.27 0.0079 0.0087 0.0098  
0.37 0.0106 0.0125 0.0146  
0.15 0.0039 0.0051 0.0059  
1.25  
0.85  
b 2X  
C
e
0.08 (0.0032) X Y  
1.20  
0.80  
0.045 0.047 0.049  
0.03 0.032 0.034  
0.016 BSC  
0.40 BSC  
1.20  
0.20  
1.15  
0.15  
1.25  
0.045 0.047 0.049  
0.25 0.0059 0.0079 0.0098  
SOLDER FOOTPRINT*  
0.40  
0.0157  
0.40  
0.0157  
1.0  
0.039  
0.40  
0.0157  
0.40  
0.0157  
0.40  
0.0157  
mm  
inches  
ǒ
Ǔ
SCALE 20:1  
*For information on soldering specifications, please refer to  
our Soldering Reference Manual, SOLDERRM/D.  
http://onsemi.com  
3
CONFIDENTIAL AND PROPRIETARY  
NOT FOR PUBLIC RELEASE  
NTK4401N  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
ON Semiconductor Website: http://onsemi.com  
Order Literature: http://www.onsemi.com/litorder  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
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2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051  
Phone: 81−3−5773−3850  
For additional information, please contact your  
local Sales Representative.  
NTK4401N/D  

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