NTMC083NP10M5L [ONSEMI]
MOSFET - Power, Dual N- & P-Channel, SO8;
| 型号： | NTMC083NP10M5L |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET - Power, Dual N- & P-Channel, SO8 |
| 文件： | 总12页 (文件大小：357K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET - Power, Dual N- &
P-Channel, SO8
100 V, 83 mW, 4.5 A,
-100 V, 131 mW, -3.6 A
NTMC083NP10M5L
Features
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• Small Footprint (5 x 6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
G
100 V
83 mW @ 10 V
131 mW @ 10 V
4.5 A
−3.6 A
• The Part is Not ESD Protected
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
−100 V
Dual−Channel MOSFET
Typical Applications
• Power Tools, Battery Operated Vacuums
• UAV/Drones, Material Handling
• Motor Drive, Home Automation
MAXIMUM RATINGS (T = 25°C, Unless otherwise specified)
J
Parameter
Symbol
Q1
100
20
Q2
−100
20
Unit
V
Drain−to−Source Breakdown Voltage
Gate−to−Source Voltage
V
(BR)DSS
V
GS
V
Continuous
Steady
State
T
= 25°C
= 100°C
= 25°C
I
4.1
2.5
3.1
1.2
2.9
−3.3
−2
A
C
D
Drain Current
T
C
R
(Note 2)
q
JC
Power Dissi-
pation R
Steady
State
T
C
P
3.1
W
A
D
q
JC
T
C
= 100°C
1.2
(Note 2)
Continuous
Drain Current
R
Steady
State
T = 25°C
A
I
D
−2.4
q
JA
T = 100°C
A
1.8
−1.4
SOIC8
CASE 751EB
(Notes 1, 2)
Power Dissi-
pation R
Steady
State
T = 25°C
P
1.6
0.6
20
1.6
0.6
20
W
A
D
q
JA
T = 100°C
A
(Notes 1, 2)
MARKING DIAGRAM
Pulsed Drain
Current
T = 25°C, t = 10 ms
A
I
DM
A
p
Operating Junction and Storage
Temperature Range
T , T
−55 to +150
°C
J
stg
83NP10M5
ALYW
Source Current (Body Diode)
I
S
3
3
A
Single Pulse Drain−to−Source
E
AS
18
34
mJ
Avalanche Energy
(I = 6 A, 8.2 A, L = 1 mH)
L
A
L
Y
= Assembly Location
= Wafer Lot
= Year
Lead Temperature Soldering Reflow for
Soldering Purposes
(1/8” from case for 10 s)
T
L
260
260
°C
W
= Work Week
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
1. Surface−mounted on FR4 board using 1 in pad size, 1 oz Cu pad.
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of
this data sheet.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
May, 2021 − Rev. 1
NTMC083NP10M5L/D
NTMC083NP10M5L
THERMAL CHARACTERISTICS
Symbol
Parameter
Q1
40
78
Q2
40
78
Unit
Junction−to−Case – Steady State (Note 3)
Junction−to−Ambient – Steady State (Note 3)
°C/W
R
R
q
JC
JA
q
3. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular
conditions noted.
ELECTRICAL CHARACTERISTICS (Q1, N−CHANNEL) (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
100
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/ T
J
60
mV/°C
(BR)DSS
I
D
= 250 mA, ref to 25°C
Zero Gate Voltage Drain Current
I
T = 25°C
1
mA
DSS
J
V
GS
= 0 V, V = 80 V
DS
T = 125°C
J
100
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
I
V
DS
= 0 V, V
=
20 V
nA
GSS
GS
V
V
GS
= V , I = 28 mA
1.0
1.9
8.2
3.0
V
GS(TH)
DS
D
Negative Threshold Temperature
Coefficient
V
/ T
J
mV/°C
GS(TH)
I
D
= 22 mA, ref to 25°C
Drain−to−Source On Resistance
R
V
= 10 V, I = 1.5 A
59.4
96.3
7.1
83
mW
DS(on)
GS
D
V
GS
= 4.5 V, I = 1.2 A
118
D
Forward Transconductance
Gate−Resistance
g
FS
V
= 5 V, I = 4 A
S
DS
D
R
T = 25°C
A
1.21
W
G
CHARGES & CAPACITANCES
Input Capacitance
C
222
55.4
2.6
3
pF
nC
ISS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
V
GS
= 0 V, f = 1 MHz, V = 50 V
DS
OSS
RSS
C
Q
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Q
0.6
0.9
1
G(TH)
V
= 4.5 V, V = 50 V, I = 1.5 A
DS D
GS
Q
GS
Q
GD
Q
V
= 10 V, V = 50 V, I = 1.5 A
5
G(TOT)
GS
DD
D
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
t
8.4
8
ns
ns
d(ON)
t
r
V
= 10 V, V = 50 V, I = 1.5 A,
DS D
GS
R
= 6 W
G
Turn−Off Delay Time
Fall Time
t
8.9
6.2
5.7
2
d(OFF)
t
f
Turn−On Delay Time
Rise Time
t
d(ON)
t
r
V
GS
= 4.5 V, V = 50 V, I = 1.5 A,
DS D
R
= 6 W
G
Turn−Off Delay Time
Fall Time
t
11.2
4.6
d(OFF)
t
f
OFF CHARACTERISTICS
Forward Diode Voltage
V
SD
T = 25°C
0.8
1.3
1.2
V
J
V
S
= 0 V,
GS
I
= 1.5 A
T = 125°C
J
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2
NTMC083NP10M5L
ELECTRICAL CHARACTERISTICS (Q1, N−CHANNEL) (T = 25°C unless otherwise noted) (continued)
J
Parameter
OFF CHARACTERISTICS
Reverse Recovery Time
Charge Time
Symbol
Test Conditions
Min
Typ
Max
Unit
t
19
13
6
ns
RR
t
t
a
V
GS
= 0 V, dI /dt = 100 A/ms,
S
I
S
= 0.8 A
Discharge Time
b
Reverse Recovery Charge
Q
11
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ELECTRICAL CHARACTERISTICS (Q2, P−CHANNEL) (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
100
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/ T
J
54
mV/°C
(BR)DSS
I
D
= 250 mA, ref to 25°C
Zero Gate Voltage Drain Current
I
T = 25°C
1
mA
DSS
J
V
GS
= 0 V, V = 80 V
DS
T = 125°C
J
100
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
I
V
DS
= 0 V, V
=
20 V
nA
GSS
GS
V
V
GS
= V , I = −28 mA
−2.0
−3.0
−4.0
V
GS(TH)
DS
D
/ T
Negative Threshold Temperature
Coefficient
V
6.61
mV/°C
GS(TH)
J
I
D
= −28 mA, ref to 25°C
Drain−to−Source On Resistance
R
V
= 110 V, I = −1.5 A
109
141
7.9
131
198
mW
DS(on)
GS
D
V
= −6 V, I = −1 A
D
GS
Forward Transconductance
Gate−Resistance
g
FS
V
= 5 V, I = −7 A
S
DS
D
R
T = 25°C
A
3.36
W
G
CHARGES & CAPACITANCES
Input Capacitance
C
525
88
pF
nC
ISS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
V
= 0 V, f = 1 MHz, V = −50 V
DS
OSS
RSS
GS
C
4
Q
8.4
1.8
2.7
1.3
5.2
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Q
G(TH)
V
= −10 V, V = −50 V, I = −1.5 A
DS D
GS
Q
GS
GD
Q
Q
V
= 6 V, V = 50 V, I =−1.5 A
GS DD D
G(TOT)
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
t
10.1
2.7
ns
ns
d(ON)
t
r
V
= 10 V, V = −50 V, I = −1.5 A,
DS D
GS
R
= 6 W
G
Turn−Off Delay Time
Fall Time
t
15.9
6.8
d(OFF)
t
f
Turn−On Delay Time
Rise Time
t
13.3
5.7
d(ON)
t
r
V
GS
= −6 V, V = −50 V, I = −41.5A,
DS D
R
= 6 W
G
Turn−Off Delay Time
Fall Time
t
12.5
7
d(OFF)
t
f
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3
NTMC083NP10M5L
ELECTRICAL CHARACTERISTICS (Q2, P−CHANNEL) (T = 25°C unless otherwise noted) (continued)
J
Parameter
OFF CHARACTERISTICS
Forward Diode Voltage
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Symbol
Test Conditions
Min
Typ
Max
Unit
V
V
SD
T = 25°C
−0.8
−0.7
31
−1.2
J
V
S
= 0 V,
GS
I
= −1.5 A
T = 125°C
J
t
ns
RR
t
t
23
a
V
= 0 V, dI /dt = 100 A/ms,
S
GS
I
S
= −0.8 A
Discharge Time
8
b
Reverse Recovery Charge
Q
42
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
†
Device
Device Marking
Package
Shipping (Qty / Packing)
NTMC083NP10M5L
83NP10M5
SO8
2500 / Tape & Reel
(Pb−Free/Halogen Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
NTMC083NP10M5L
TYPICAL CHARACTERISTICS − N−CHANNEL
20
15
10
20
V
GS
= 7 to 10 V
T = −55°C
J
V
DS
= 10 V
5.0 V
4.5 V
4.0 V
3.5 V
T = 25°C
J
15
10
T = 125°C
J
5
0
5
0
3.0 V
2.5 V
0
1
2
3
4
5
0
1
2
3
4
5
6
7
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
200
180
160
140
120
100
80
200
T = 25°C
J
I
= 1.5 A
D
180
160
140
120
100
80
T = 25°C
J
V
= 4.5 V
GS
60
40
V
= 10 V
4
GS
60
40
20
0
3
4
5
6
7
8
9
10
1
2
3
5
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
10000
1000
100
10
2.5
2.0
1.5
1.0
T = 175°C
J
I
V
= 1.5 A
= 10 V
D
T = 150°C
J
GS
T = 125°C
J
T = 85°C
J
1
T = 25°C
J
0.1
0.5
0
0.01
0.001
−50 −25
0
25
50
75 100 125 150 175
0
10
20
30
40
50
60
70
80
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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5
NTMC083NP10M5L
TYPICAL CHARACTERISTICS − N−CHANNEL
1000
100
10
T = 25°C
DS
J
V
9
8
7
6
5
4
3
2
= 50 V
C
iss
I
D
= 1.5 A
C
oss
Q
Q
gd
gs
10
1
V
= 0 V
GS
C
rss
T = 25°C
J
1
0
f = 1 MHz
0.1
1
10
100
0
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
100
10
1
1.50
1.25
1.00
0.75
V
GS
= 0 V
t
t
d(off)
d(on)
t
f
t
r
T = 25°C
T = 125°C
J
J
0.1
V
= 50 V
= 1.5 A
= 4.5 V
DS
0.50
0.25
I
D
V
GS
T = 150°C
J
T = −55°C
J
0.01
1
10
R , GATE RESISTANCE (W)
100
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
V
GS
≤ 10 V
Single Pulse
10
1
T
C
= 25°C
T
= 25°C
10
J(initial)
300 ms
1 ms
10 ms
100 ms
T
= 100°C
1E−05
J(initial)
0.1
R
Limit
DS(on)
1 s
Thermal Limit
Package Limit
0.01
1
1E−06
1E−04
1E−03
1E−02
0.1
1
10
100
T , TIME IN AVALANCHE (sec)
AV
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 12. Maximum Drain Current vs. Time in
Avalanche
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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6
NTMC083NP10M5L
TYPICAL CHARACTERISTICS − N−CHANNEL
100
Duty Cycle = 50%
20%
10%
5%
10
1
2%
1%
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (s)
Figure 13. Thermal Response
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7
NTMC083NP10M5L
TYPICAL CHARACTERISTICS − P−CHANNEL
15
15
10
V
= −6.5 V
to −10 V
GS
V
DS
= −10 V
−6.0 V
−5.5 V
10
−5.0 V
5
0
5
0
T = 25°C
J
−4.5 V
−4.0 V
T = 125°C
J
T = −55°C
J
0
1
2
3
4
5
0
1
5
1
2
3
4
5
6
7
−V , DRAIN−TO−SOURCE VOLTAGE (V)
−V , GATE−TO−SOURCE VOLTAGE (V)
DS
GS
Figure 14. On−Region Characteristics
Figure 15. Transfer Characteristics
200
180
160
140
120
300
T = 25°C
J
I
D
= −1.5 A
250
200
150
100
T = 25°C
J
V
= −6 V
GS
V
= −10 V
GS
50
0
100
80
4
5
6
7
8
9
10
2
3
4
5
−V , GATE−TO−SOURCE VOLTAGE (V)
GS
−I , DRAIN CURRENT (A)
D
Figure 16. On−Resistance vs. Gate−to−Source
Figure 17. On−Resistance vs. Drain Current
Voltage
and Gate Voltage
10000
1000
100
2.5
2.0
1.5
1.0
I
V
= −1.5 A
D
= −10 V
GS
T = 175°C
J
T = 150°C
J
T = 125°C
J
T = 85°C
J
10
T = 25°C
J
1
0.5
0
0.1
−50 −25
0
25
50
75 100 125 150 175
15
25
35
45
55
65
75
85
95
T , JUNCTION TEMPERATURE (°C)
J
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 18. On−Resistance Variation with
Figure 19. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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NTMC083NP10M5L
TYPICAL CHARACTERISTICS − P−CHANNEL
1000
100
10
C
iss
T = 25°C
DS
J
V
9
8
7
6
5
4
3
2
= −50 V
I
D
= −1.5 A
C
oss
Q
Q
gd
gs
10
1
C
rss
V
= 0 V
GS
T = 25°C
J
1
0
f = 1 MHz
0.1
1
10
100
0
1
2
3
4
5
6
7
8
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Q , TOTAL GATE CHARGE (nC)
g
Figure 20. Capacitance Variation
Figure 21. Gate−to−Source vs. Total Charge
100
1.5
1.2
0.9
V
GS
= 0 V
t
t
d(on)
10
d(off)
t
f
T = 25°C
T = 125°C
J
J
t
r
0.6
0.3
V
= −50 V
= −1.5 A
= −6 V
DS
I
D
V
GS
T = 150°C
J
T = −55°C
J
1
1
10
R , GATE RESISTANCE (W)
100
0
0.2
0.4
0.6
0.8
1.0
1.2
−V , SOURCE−TO−DRAIN VOLTAGE (V)
G
SD
Figure 22. Resistive Switching Time Variation
vs. Gate Resistance
Figure 23. Diode Forward Voltage vs. Current
100
V
≤ 10 V
GS
Single Pulse
10
1
T
C
= 25°C
300 ms
1 ms
T
= 25°C
J(initial)
10
10 ms
100 ms
T
= 100°C
J(initial)
0.1
R
Limit
DS(on)
1 s
Thermal Limit
Package Limit
0.01
1
1E−06
1E−05
1E−04
1E−03
1E−02
0.1
1
10
100
T , TIME IN AVALANCHE (s)
AV
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 25. Maximum Drain Current vs. Time in
Avalanche
Figure 24. Maximum Rated Forward Biased
Safe Operating Area
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NTMC083NP10M5L
TYPICAL CHARACTERISTICS − P−CHANNEL
100
10
1
Duty Cycle = 50%
20%
10%
5%
2%
1%
0.1
0.01
Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (sec)
Figure 26. Thermal Response
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10
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC8
CASE 751EB
ISSUE A
DATE 24 AUG 2017
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13735G
SOIC8
PAGE 1 OF 1
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相关型号：
NTMC1300R2
2.2A, 30V, 0.09ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, CASE 751-07, SO-8
ROCHESTER
NTMC1300R2
2.2A, 30V, 0.09ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, CASE 751-07, SO-8
ONSEMI
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