NTMFD4C20N [ONSEMI]
Dual N-Channel Power MOSFET;
| 型号： | NTMFD4C20N |
| 厂家： | 
ONSEMI |
| 描述： | Dual N-Channel Power MOSFET |
| 文件： | 总12页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTMFD4C20N
Dual N-Channel Power
MOSFET
30 V, High Side 18 A / Low Side 27 A, Dual
N−Channel SO8FL
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Features
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
• Co−Packaged Power Stage Solution to Minimize Board Space
• Minimized Parasitic Inductances
7.3 mW @ 10 V
10.8 mW @ 4.5 V
3.4 mW @ 10 V
5.2 mW @ 4.5 V
Q1 Top FET
30 V
18 A
27 A
• Optimized Devices to Reduce Power Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Q2 Bottom
FET
Compliant
30 V
Applications
D1
(2, 3, 4, 9)
• DC−DC Converters
• System Voltage Rails
• Point of Load
(1) G1
S1/D2 (10)
(8) G2
S2 (5, 6, 7)
PIN CONNECTIONS
D1 4
5 S2
6 S2
7 S2
8 G2
D1 3
D1 2
G1 1
9
D1
10
S1/D2
(Bottom View)
MARKING
DIAGRAM
1
DFN8
4C20N
CASE 506BX
AYWZZ
1
4C20N = Specific Device Code
A
Y
= Assembly Location
= Year
W
ZZ
= Work Week
= Lot Traceability
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
September, 2016 − Rev. 4
NTMFD4C20N/D
NTMFD4C20N
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
Drain−to−Source Voltage
Gate−to−Source Voltage
Gate−to−Source Voltage
Q1
Q2
Q1
Q2
Q1
V
30
V
DSS
V
20
V
GS
Continuous Drain Current R
(Note 1)
T = 25°C
I
D
12
8.6
q
JA
A
T = 85°C
A
A
T = 25°C
A
Q2
18
T = 85°C
A
13
Power Dissipation
RqJA (Note 1)
T = 25°C
Q1
Q2
Q1
P
1.88
1.97
18.2
13.1
27.4
19.8
4.37
4.6
W
A
D
D
D
Continuous Drain Current R
≤ 10 s (Note 1)
T = 25°C
A
I
D
q
JA
T = 85°C
A
A
T = 25°C
A
Q2
Steady
State
T = 85°C
A
Power Dissipation
≤ 10 s (Note 1)
T = 25°C
A
Q1
Q2
Q1
P
I
W
R
q
JA
Continuous Drain Current
(Note 2)
T = 25°C
A
9.1
D
R
q
JA
T = 85°C
A
6.6
A
T = 25°C
A
Q2
13.7
9.9
T = 85°C
A
Power Dissipation
(Note 2)
T = 25 °C
A
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
P
1.09
1.15
55
W
A
R
q
JA
Pulsed Drain Current
TA = 25°C
tp = 10 ms
I
DM
82
Operating Junction and Storage Temperature
Source Current (Body Diode)
T , T
−55 to +150
°C
A
J
STG
I
S
4.0
4.2
6
Drain to Source DV/DT
dV/dt
EAS
EAS
V/ns
mJ
Single Pulse Drain−to−Source Avalanche Energy (T = 25C, V
I = 18 A
Q1
Q2
16
J
DD
L
pk
= 50 V, V = 10 V, L = 0.1 mH, R = 25 W)
GS
G
I = 29 A
42
L
pk
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm .
2
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2
NTMFD4C20N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
FET
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Symbol
Value
66.5
63.3
114.3
108.7
28.6
27.2
5.4
Unit
Junction−to−Ambient – Steady State (Note 3)
R
q
JA
q
JA
q
JA
q
JC
Junction−to−Ambient – Steady State (Note 4)
Junction−to−Ambient – (t ≤ 10 s) (Note 3)
Junction−to−Case – (Drain)
R
R
R
°C/W
3.7
3. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm .
2
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
FET
Symbol
Test Condition
Min
Typ
Max
Unit
V
OFF CHARACTERISTICS
Drain−to−Source Breakdown
Voltage
Q1
Q2
Q1
Q2
Q1
V
30
30
V
= 0 V, I = 250 mA
(BR)DSS
GS
D
V
= 0 V, I = 1 mA
D
GS
Drain−to−Source Breakdown
Voltage Temperature Coefficient
V
/
14.5
12
mV/°C
mA
(BR)DSS
T
J
Zero Gate Voltage Drain Cur-
rent
I
V
V
= 0 V,
= 24 V
T = 25°C
1
DSS
GS
DS
J
T = 125°C
J
10
10
Q2
V
V
= 0 V,
= 24 V
T = 25°C
J
GS
DS
Gate−to−Source Leakage Cur-
rent
Q1
Q2
I
V
DS
= 0 V, V
=
20 V
100
100
nA
GSS
GS
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Q1
Q2
Q1
Q2
Q1
V
V
= V , I = 250 mA
1.3
1.3
2.1
2.1
V
GS(TH)
GS
DS
D
Negative Threshold Temper-
ature Coefficient
V
/
4.7
5.1
5.8
8.7
2.7
4.0
43
mV/°C
GS(TH)
T
J
Drain−to−Source On Resist-
ance
R
V
= 10 V
I
D
I
D
I
D
I
D
= 10 A
= 10 A
= 20 A
= 20 A
7.3
10.8
3.4
DS(on)
GS
V
= 4.5 V
= 10 V
= 4.5 V
GS
mW
Q2
V
GS
GS
V
5.2
Forward Transconductance
Q1
Q2
g
FS
V
= 1.5 V, I = 10 A
S
DS
D
68
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
NTMFD4C20N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
FET
Symbol
Test Condition
Min
Typ
Max
Unit
CHARGES, CAPACITANCES & GATE RESISTANCE
Q1
970
1950
430
990
125
50
Input Capacitance
C
ISS
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Output Capacitance
Reverse Capacitance
Total Gate Charge
C
OSS
C
RSS
V
= 0 V, f = 1 MHz, V = 15 V
pF
GS
DS
9.3
13
Q
G(TOT)
1.6
3.3
3.3
6.0
4.2
3.0
19
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Q
G(TH)
V
GS
= 4.5 V, V = 15 V; I = 10 A
nC
nC
DS
D
Q
GS
GD
Q
Q
V
= 10 V, V = 15 V; I = 10 A
G(TOT)
d(ON)
GS DS D
29
SWITCHING CHARACTERISTICS (Note 6)
Q1
9.0
11
Turn−On Delay Time
t
Q2
Q1
33
32
15
20
5.0
5.0
Rise Time
t
r
Q2
V
= 4.5 V, V = 15 V,
DS
GS
ns
I
D
= 15 A, R = 3.0 W
G
Q1
Turn−Off Delay Time
t
d(OFF)
Q2
Q1
Fall Time
t
f
Q2
SWITCHING CHARACTERISTICS (Note 6)
Q1
6.0
8.0
26
Turn−On Delay Time
t
d(ON)
Q2
Q1
Rise Time
t
r
Q2
26
V
GS
= 10 V, V = 15 V,
DS
ns
I
D
= 15 A, R = 3.0 W
G
Q1
18
Turn−Off Delay Time
t
d(OFF)
Q2
25
Q1
4.0
4.0
Fall Time
t
f
Q2
DRAIN−SOURCE DIODE CHARACTERISTICS
T = 25°C
0.75
0.62
0.45
0.37
1.0
J
V
I
= 0 V,
= 3 A
GS
S
Q1
T = 125°C
J
Forward Voltage
V
SD
V
T = 25°C
J
0.70
V
GS
= 0 V,
= 3 A
Q2
I
S
T = 125°C
J
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
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4
NTMFD4C20N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
FET
Symbol
Test Condition
Min
Typ
Max
Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
Q1
23
38
Reverse Recovery Time
t
RR
Q2
Q1
11.6
18.6
11.4
19.4
10
Charge Time
ta
ns
Q2
V
GS
= 0 V, d /d = 100 A/ms, I
=
IS
t
S
30 A
Q1
Discharge Time
tb
Q2
Q1
Reverse Recovery Charge
Q
nC
RR
Q2
25
PACKAGE PARASITIC VALUES
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
0.38
0.65
0.054
0.007
1.5
Source Inductance
Drain Inductance
Gate Inductance
Gate Resistance
L
nH
nH
nH
W
S
D
G
L
T = 25°C
A
L
1.5
0.3
0.3
1.0
2.0
2.0
R
G
1.0
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
†
Device
NTMFD4C20NT1G
Package
Shipping
DFN8
1500 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTMFD4C20N
TYPICAL CHARACTERISTICS − Q1
80
65
60
55
50
45
40
35
30
25
20
15
10
4.0 V
4.2 V to 10 V
3.8 V
T = 25°C
J
V
DS
= 5 V
70
60
50
40
30
20
3.6 V
3.4 V
3.2 V
3.0 V
T = 125°C
J
2.8 V
2.6 V
T = 25°C
J
10
0
5
0
T = −55°C
J
0
1
2
3
4
5
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
, GATE−TO−SOURCE VOLTAGE (V)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
I
D
= 30 A
T = 25°C
J
V
= 4.5 V
= 10 V
GS
V
GS
0.004
0.002
0.004
0.002
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
10
20
30
40
50
60
70
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.7
1.6
10000
1000
V
GS
= 0 V
I
V
= 30 A
D
T = 150°C
J
= 10 V
GS
1.5
1.4
T = 125°C
J
1.3
1.2
1.1
1.0
0.9
0.8
0.7
100
10
T = 85°C
J
−50 −25
0
25
50
75
100
125 150
5
10
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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6
NTMFD4C20N
TYPICAL CHARACTERISTICS − Q1
10
1200
1000
Q
T
V
= 0 V
GS
C
iss
T = 25°C
J
8
6
4
800
600
400
C
oss
Q
gs
Q
gd
T = 25°C
J
V
= 15 V
= 10 V
= 30 A
DD
C
2
0
rss
V
GS
200
0
I
D
0
5
10
15
20
25
30
0
2
4
6
8
10 12 14 16 18 20
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
20
18
16
14
12
10
8
1000
100
V
GS
= 0 V
V
= 15 V
= 15 A
= 10 V
DD
I
D
V
GS
t
t
d(on)
r
t
d(off)
t
f
10
1
6
4
T = 125°C
J
2
T = 25°C
J
0
0.4
1
10
R , GATE RESISTANCE (W)
100
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
14
100
10
1
I
D
= 17 A
10 ms
12
10
100 ms
1 ms
8
6
10 ms
0 V < V < 10 V
GS
Single Pulse
4
T
= 25°C
C
0.1
dc
R
Limit
DS(on)
2
0
Thermal Limit
Package Limit
0.01
0.01
0.1
1
10
100
25
50
75
100
125
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T , STARTING JUNCTION TEMPERATURE (°C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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NTMFD4C20N
TYPICAL CHARACTERISTICS − Q1
100
10
Duty Cycle = 50%
20%
10%
5%
2%
1%
1
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
100
60
50
40
30
20
10
0
T = 25°C
A
T = 85°C
A
10
1
1.E−08 1.E−07
0
10
20
30
40
(A)
50
60
70
80
1.E−06
1.E−05
1.E−04 1.E−03
I
PULSE WIDTH (SECONDS)
D
Figure 14. GFS vs. ID
Figure 15. Avalanche Characteristics
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NTMFD4C20N
TYPICAL CHARACTERISTICS − Q2
140
130
120
110
100
90
140
10 V
T = 25°C
J
V
DS
= 5 V
130
120
110
100
90
3.8 V
3.6 V
4 V to 6.5 V
3.4 V
3.2 V
80
70
80
70
60
60
50
40
50
40
3.0 V
T = 125°C
J
30
20
10
0
30
20
10
0
T = 25°C
2.8 V
2.6 V
J
T = −55°C
J
0
1
2
3
4
5
0
0.5 1.0 1.5
2.0 2.5 3.0 3.5 4.0 4.5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 16. On−Region Characteristics
Figure 17. Transfer Characteristics
0.028
0.026
0.024
0.022
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0.008
0.007
I
= 30 A
T = 25°C
D
J
T = 25°C
J
0.006
0.005
V
= 4.5 V
= 10 V
40
GS
0.004
0.003
0.002
V
GS
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
10
20
30
50
60
70
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 18. On−Resistance vs. VGS
Figure 19. On−Resistance vs. Drain Current
and Gate Voltage
1.7
1.6
10000
V
GS
= 0 V
I
V
= 30 A
D
= 10 V
GS
T = 150°C
J
1.5
1.4
1000
T = 125°C
J
1.3
1.2
1.1
1.0
0.9
0.8
0.7
100
10
T = 85°C
J
−50 −25
0
25
50
75
100
125 150
5
10
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
V
J
Figure 20. On−Resistance Variation with
Temperature
Figure 21. Drain−to−Source Leakage Current
vs. Voltage
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NTMFD4C20N
TYPICAL CHARACTERISTICS − Q2
3000
2750
2500
10
Q
V
= 0 V
T
GS
T = 25°C
J
8
6
4
2
0
2250
2000
1750
1500
1250
1000
750
C
C
iss
oss
Q
Q
gd
gs
T = 25°C
J
V
V
= 15 V
= 10 V
DD
GS
500
250
0
C
rss
I
D
= 30 A
0
5
10
15
20
25
30
0
4
8
12
16
20
24
28
32
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
g
Figure 22. Capacitance Variation
Figure 23. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
20
18
16
14
12
10
8
1000
100
V
GS
= 0 V
V
= 15 V
= 15 A
= 10 V
DD
I
D
t
V
GS
d(off)
t
d(on)
t
r
t
f
10
1
6
T = 125°C
J
4
T = 25°C
J
2
0
0.4
1
10
R , GATE RESISTANCE (W)
100
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 24. Resistive Switching Time Variation
vs. Gate Resistance
Figure 25. Diode Forward Voltage vs. Current
45
1000
100
I
D
= 29 A
40
35
30
25
10 ms
100 ms
1 ms
10
1
10 ms
20
15
10
0 V < V < 10 V
Single Pulse
GS
T
C
= 25°C
0.1
R
Limit
DS(on)
dc
Thermal Limit
Package Limit
5
0
0.01
0.01
0.1
1
10
100
25
50
75
100
125
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T , STARTING JUNCTION TEMPERATURE (°C)
J
Figure 26. Maximum Rated Forward Biased
Safe Operating Area
Figure 27. Maximum Avalanche Energy vs.
Starting Junction Temperature
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NTMFD4C20N
TYPICAL CHARACTERISTICS − Q2
100
10
Duty Cycle = 50%
20%
10%
5%
2%
1%
1
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 28. Thermal Response
100
120
100
80
60
40
20
0
T = 25°C
A
T = 85°C
A
10
1
1.E−07
0
10
20
30
40
(A)
50
60
70
80
1.E−06
1.E−05
1.E−04
1.E−03
I
PULSE WIDTH (SECONDS)
D
Figure 29. GFS vs. ID
Figure 30. Avalanche Characteristics
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11
NTMFD4C20N
PACKAGE DIMENSIONS
DFN8 5x6, 1.27P Dual Flag (SO8FL−Dual−Asymmetrical)
CASE 506BX
ISSUE D
NOTES:
2X
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED
BETWEEN 0.15 AND 0.25 MM FROM THE TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED PADS AS WELL AS THE
TERMINALS.
5. DIMENSIONS b AND L ARE MEASURED AT THE PACKAGE SUR-
FACE
6. DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
7. SEATING PLANE IS DEFINED BY THE TERMINALS. A1 IS DEFINED
AS THE DISTANCE FROM THE SEATING PLANE TO THE LOWEST
POINT ON THE PACKAGE BODY.
D
A
D1
B
E
2X
NOTE 6
0.20
C
8
7
6
5
4X
h
PIN ONE
IDENTIFIER
E1
MILLIMETERS
DIM
A
A1
b
b1
c
D
D1
D2
E
E1
E2
E3
e
MIN
0.90
0.00
0.41
0.41
0.23
5.00
4.50
3.50
6.00
5.50
2.27
0.82
MAX
1.10
0.05
0.61
0.61
0.33
5.30
5.10
4.22
6.30
6.10
2.67
1.22
c
A1
1
2
3
4
NOTE 7
TOP VIEW
0.10
0.10
C
DETAIL A
A
C
SEATING
PLANE
C
NOTE 4
1.27 BSC
SIDE VIEW
e
h
k
k1
k2
L
−−−
0.39
0.56
0.73
0.35
12
_
DETAIL A
0.59
0.76
0.93
0.55
DETAIL B
e/2
b
8X
1
4
RECOMMENDED
SOLDERING FOOTPRINT*
E3
0.10
0.05
C
C
A
B
NOTE 3
k
5.35
4X
0.69
PACKAGE
OUTLINE
8X
k1
E2
0.64
0.10
REF
6X b1
NOTE 3
DETAIL B
8
5
k2
1.97
2.23
8X
L
2.68
D2
BOTTOM VIEW
6.48
0.69
1.22
1.27
PITCH
4X
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
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◊
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