NTMFS4108NT3G [ONSEMI]
Power MOSFET 30 V, 35 A, Single N-Channel, SO-8 Flat Lead Package; 功率MOSFET的30 V ， 35 A单N沟道， SO- 8扁平引脚封装
| 型号： | NTMFS4108NT3G |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET 30 V, 35 A, Single N-Channel, SO-8 Flat Lead Package |
| 文件： | 总5页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTMFS4108N
Power MOSFET
30 V, 35 A, Single N-Channel,
SO-8 Flat Lead Package
http://onsemi.com
Features
•ꢀThermally and Electrically Enhanced Packaging Compatible with
Standard SO-8 Package Footprint
•ꢀNew Package Provides Capability of Inspection and Probe After
Board Mounting
V
R
DS(on)
TYP
I MAX
D
(BR)DSS
1.8 mW @ 10 V
2.7 mW @ 4.5 V
•ꢀUltra Low R
(at 4.5 V ), Low Gate Resistance and Low Q
GS G
DS(on)
30 V
35 A
•ꢀOptimized for Low Side Synchronous Applications
•ꢀHigh Speed Switching Capability
Applications
D
•ꢀNotebook Computer Vcore Applications
•ꢀNetwork Applications
•ꢀDC-DC Converters
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Drain-to-Source Voltage
Symbol Value Unit
S
V
30
$20
22
V
V
A
DSS
Gate-to-Source Voltage
V
GS
MARKING
DIAGRAM
Continuous Drain
Current (Note 1)
T = 25°C
I
D
A
Steady
State
T = 85°C
A
16
D
S
S
D
D
t v10 s
T = 25°C
35
A
4108N
AYWWG
G
1
Power Dissipation
(Note 1)
Steady
State
P
2.4
W
A
D
SO-8 FLAT LEAD
CASE 488AA
STYLE 1
S
T = 25°C
A
G
t v10 s
6.25
13.5
10
D
Continuous Drain
Current (Note 2)
T = 25°C
A
I
D
T = 85°C
A
4108N = Specific Device Code
A
= Assembly Location
= Year
= Work Week
Steady
State
Power Dissipation
(Note 2)
P
P
0.91
W
W
D
T = 25°C
A
Y
WW
G
Power Dissipation
(Note 1)
100
203
D
= Pb-Free Package
T
= 25°C
C
R
q
JC
(Note: Microdot may be in either location)
Pulsed Drain Current
t = 10 ms
p
I
A
DM
Operating Junction and Storage Temperature
T , T
J
-55 to
150
°C
stg
ORDERING INFORMATION
Continuous Source Current (Body Diode)
Single Pulse Drain-to-Source Avalanche
Energy (V = 30 V, V = 10 V, I = 30 A,
I
6.0
A
S
†
Device
Package
Shipping
E
AS
450
mJ
NTMFS4108NT1G SO-8 FL
(Pb-Free)
1500 Tape / Reel
5000 Tape / Reel
DD
GS
PK
L = 1 mH, R = 25 W)
G
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
°C
L
NTMFS4108NT3G SO-8 FL
(Pb-Free)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface-mounted on FR4 board using 1″ sq. pad size
(Cu area = 1.127″ sq. [1 oz] including traces).
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
2. Surface-mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.412″ sq.).
©ꢀ Semiconductor Components Industries, LLC, 2007
July, 2007 - Rev. 5
1
Publication Order Number:
NTMFS4108N/D
NTMFS4108N
THERMAL RESISTANCE RATINGS
Rating
Symbol
Max
1.25
53
Unit
Junction-to-Case (Drain)
R
°C/W
q
JC
q
JA
q
JA
q
JA
Junction-to-Ambient - Steady State (Note 3)
Junction-to-Ambient - t v10 s (Note 3)
Junction-to-Ambient - Steady State (Note 4)
R
R
R
20
138
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain-to-Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
D
30
V
(BR)DSS
Drain-to-Source Breakdown Voltage
ꢁemT perature Coefficient
V
/T
21
mV/°C
(BR)DSS
J
Zero Gate Voltage Drain Current
I
T = 25°C
1.0
25
mA
DSS
J
V
GS
= 0 V, V = 24 V
DS
T = 125°C
J
Gate-to-Source Leakage Current
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
GS
100
nA
GSS
DS
V
V
GS
= V , I = 250 mA
DS D
1.0
2.5
V
GS(TH)
Negative Threshold Temperature Coefficient
Drain-to-Source On Resistance
V
/T
7.5
2.7
1.8
25
mV/°C
mW
GS(TH)
J
R
V
= 4.5 V, I = 19 A
D
3.4
2.2
DS(on)
GS
V
= 10 V, I = 21 A
D
GS
DS
Forward Transconductance
g
FS
V
= 15 V, I = 10 A
D
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
6000
1200
700
54
pF
ISS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
OSS
C
RSS
V = 0 V, f = 1.0 MHz, V = 15 V
GS DS
Q
G(TOT)
nC
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
Q
11
G(TH)
V
GS
= 4.5 V, V = 24 V, I = 21 A
DS D
Q
16
GS
GD
Q
23
R
G
0.7
W
SWITCHING CHARACTERISTICS, V = 10 V (Note 6)
GS
Turn-On Delay Time
Rise Time
t
45
60
ns
d(ON)
t
r
V
= 4.5 V, V = 15 V,
DS
= 1.0 A, R = 6.0 W
G
GS
I
D
Turn-Off Delay Time
Fall Time
t
70
d(OFF)
t
f
140
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.72
0.65
41
1.1
V
SD
J
V
GS
= 0 V, I = 6.0 A
S
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
20
a
V
GS
= 0 V, d /d = 100 A/ms,
IS t
I
S
= 6.0 A
Discharge Time
21
b
Reverse Recovery Charge
Q
RR
45
nC
3. Surface-mounted on FR4 board using 1″ sq. pad size (Cu area = 1.127″ sq. [1 oz] including traces).
4. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.412″ sq.).
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS4108N
TYPICAL PERFORMANCE CURVES
40
30
20
40
T = 25°C
J
3.5 V
= 4 V to 10 V
V
DS
≥ 10 V
3.4 V
V
GS
30
20
3.3 V
3.2 V
3.1 V
T = 125°C
J
10
0
10
0
3.0 V
2.9 V
T = 25°C
J
T = -55°C
J
0
2
4
6
8
10
1
2
3
4
5
V , GATE-TO-SOURCE VOLTAGE (VOLTS)
GS
V , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.0035
0.003
0.007
0.006
T = 25°C
J
I
= 10 A
D
T = 25°C
J
V
GS
= 4.5 V
0.005
0.004
0.0025
0.002
0.003
0.002
V
GS
= 10 V
0.0015
0.001
0.001
0
0.0005
2
4
6
8
10
5
10
I
15
20
25
30
DRAIN CURRENT (AMPS)
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
D,
Figure 4. On-Resistance vs. Drain Current and
Gate Voltage
Figure 3. On-Resistance vs. Gate-to-Source
Voltage
1.7
100000
10000
1000
V
GS
= 0 V
I
= 10 A
D
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
V
= 10 V
GS
T = 150°C
J
100
10
T = 100°C
J
0.8
0.7
-50 -25
0
25
50
75
100 125
150
3
6
9
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
12
15
18
21
24
27
30
T , JUNCTION TEMPERATURE (°C)
V
J
Figure 5. On-Resistance Variation with
Temperature
Figure 6. Drain-to-Source Leakage Current
vs. Voltage
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3
NTMFS4108N
TYPICAL PERFORMANCE CURVES
8000
7000
5
30
24
18
12
T = 25°C
J
QT
C
iss
4
6000
5000
4000
3000
V
GS
Q
Q
GS
GD
3
V
DS
2
C
oss
2000
1000
0
1
0
6
0
C
rss
I
= 21 A
D
T = 25°C
J
0
5
10
15
20
25
30
0
10
20
30
40
50
60
DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate-To-Source and
Drain-To-Source Voltage vs. Total Charge
1000
100
10
7
6
5
4
3
2
V
I
= 15 V
DD
= 1.0 A
= 4.5 V
V
= 0 V
GS
D
T = 25°C
J
V
GS
t
f
t
d(off)
t
d(on)
t
r
1
0
1
10
R , GATE RESISTANCE (OHMS)
100
0.4
0.5
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
SD
0.6
0.7
0.8
V
G
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
10 ms
100
100 ms
V
= 20 V
SINGLE PULSE
1 ms
GS
10
1
10 ms
dc
T
= 25°C
C
R
LIMIT
DS(on)
Thermal Limit
Package Limit
0.1
1
10
100
V , DRAIN-TO-SOURCE VOLTAGE (V)
DS
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
NTMFS4108N
PACKAGE DIMENSIONS
DFN6 5x6, 1.27P (SO8 FL)
CASE 488AA-01
ISSUE C
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
6
5
DIM
A
A1
b
MIN
0.90
0.00
0.33
0.23
NOM
1.00
---
0.41
0.28
MAX
1.10
0.05
0.51
0.33
4 X
E1
2
c
q
D
5.15 BSC
4.90
---
6.15 BSC
5.80
---
1.27 BSC
0.61
---
0.61
0.17
D1
D2
E
E1
E2
e
G
K
L
L1
M
4.50
3.50
5.10
4.22
c
A1
5.50
3.45
6.10
4.30
1
2
3
4
0.51
0.51
0.51
0.05
3.00
0
0.71
---
0.71
0.20
3.80
TOP VIEW
C
3 X
SEATING
PLANE
e
0.10
0.10
C
C
3.40
---
DETAIL A
q
12
A
_
_
SOLDERING FOOTPRINT*
SIDE VIEW
DETAIL A
3X
4X
1.270
0.750
4X
1.000
b
8X
STYLE 1:
0.10 C A
0.05
B
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
e/2
c
L
0.965
1
4
5. DRAIN
6. DRAIN
K
2X
0.905
1.330
2X
0.495
3.200
E2
4.530
M
L1
0.475
6
5
D2
BOTTOM VIEW
G
2X
1.530
4.560
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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NTMFS4108N/D
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