NTMFS4837NHT3G [ONSEMI]
Power MOSFET 30 V, 75 A, Single N−Channel, SO−8FL; 功率MOSFET的30 V ， 75 A单N沟道， SO- 8FL
| 型号： | NTMFS4837NHT3G |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET 30 V, 75 A, Single N−Channel, SO−8FL |
| 文件： | 总7页 (文件大小：133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTMFS4837NH
Power MOSFET
30 V, 75 A, Single N−Channel, SO−8FL
Features
• Low R
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
DS(on)
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• Optimized Gate Charge to Minimize Switching Losses
• Low R
G
V
R
DS(ON)
MAX
I MAX
D
(BR)DSS
• These are Pb−Free Devices*
5.0 mW @ 10 V
8.0 mW @ 4.5 V
30 V
75 A
Applications
• Refer to Application Note AND8195/D
• CPU Power Delivery
• DC−DC Converters and Low Side Switching
D (5,6)
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
G (4)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
V
30
20
V
V
A
DSS
S (1,2,3)
N−CHANNEL MOSFET
V
GS
T = 25°C
A
I
D
16
11.5
A
Current R
(Note 1)
T = 85°C
q
JA
MARKING
DIAGRAM
Power Dissipation
(Note 1)
T = 25°C
A
P
2.2
W
A
A
D
D
D
D
R
q
JA
T = 85°C
1.15
D
Continuous Drain
T = 25°C
I
26
18.8
A
D
Current R
T = 85°C
q
JA
A
S
S
S
G
D
D
v10 s
4837NH
AYWWG
G
1
Power Dissipation
T = 25°C
P
I
5.8
3
W
A
A
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
R
v10 s
T = 85°C
q
JA
A
Steady
State
Continuous Drain
Current R
T = 25°C
10.2
7.3
D
A
D
T = 85°C
q
JA
A
(Note 2)
Power Dissipation
(Note 2)
A
Y
= Assembly Location
= Year
T = 25°C
P
0.88
0.46
W
A
A
R
q
JA
T = 85°C
WW
G
= Work Week
A
= Pb−Free Package
Continuous Drain
T
T
= 25°C
= 85°C
I
D
75
54
C
C
Current R
(Note 1)
q
JC
(Note: Microdot may be in either location)
ORDERING INFORMATION
Power Dissipation
(Note 1)
T
C
T
C
= 25°C
= 85°C
P
48
25
W
A
R
q
JC
†
Device
Package
Shipping
Pulsed Drain
Current
t =10 ms
p
T = 25°C
A
I
DM
225
NTMFS4837NHT1G
SO−8FL
1500 /
(Pb−Free)
Tape & Reel
Operating Junction and Storage Temperature
T ,
STG
−55 to
°C
J
T
+150
NTMFS4837NHT3G
SO−8FL
(Pb−Free)
5000 /
Tape & Reel
Source Current (Body Diode)
Drain to Source dV/dt
I
S
40
6
A
dV/dt
EAS
V/ns
mJ
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Single Pulse Drain−to−Source Avalanche
144
Energy (V = 30 V, V = 10 V, I = 31 A,
DD
GS
L
L = 0.3 mH, R = 25 W)
G
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
260
°C
L
*For additional information on our Pb−Free strategy and
soldering details, please download the ON Semicon-
ductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
©
Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
May, 2010 − Rev. 4
NTMFS4837NH/D
NTMFS4837NH
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
2.6
Unit
Junction−to−Case (Drain)
R
q
JC
q
JA
q
JA
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State (Note 4)
Junction−to−Ambient (tv10 s)
R
R
56.6
142
°C/W
R
q
JA
21.6
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
30
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
27.5
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25 °C
1
DSS
GS
DS
J
V
= 24 V
mA
T = 125°C
J
10
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
I
V
= 0 V, V
=
20 V
nA
GSS
DS
GS
V
V
= V , I = 250 mA
1.5
2.1
5.7
3.7
3.7
6.5
6.4
67
2.5
5.0
8.0
V
GS(TH)
GS
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
J
mV/°C
GS(TH)
R
DS(on)
V
GS
= 10 V to
11.5 V
I
D
I
D
I
D
I
D
= 30 A
= 15 A
= 30 A
= 15 A
mW
V
GS
= 4.5 V
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
FS
V
= 1.5 V, I = 50 A
S
DS
D
C
2234
450
243
15.9
2.8
3016
608
375
23.8
4.3
ISS
Output Capacitance
C
C
V
= 0 V, f = 1 MHz, V = 12 V
pF
OSS
RSS
GS
DS
Reverse Transfer Capacitance
Total Gate Charge
Q
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Q
G(TH)
V
= 4.5 V, V = 15 V; I = 30 A
nC
nC
GS
DS
D
Q
6.4
9.5
GS
GD
Q
6.6
9.8
Q
V
= 11.5 V, V = 15 V;
34.4
53
G(TOT)
GS
DS
= 15 A
I
D
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
t
15.2
27.5
18.3
7.1
22.8
41.3
27.5
10.6
d(ON)
t
r
V
GS
= 4.5 V, V = 15 V, I = 15 A,
DS D
ns
R
= 3.0 W
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS4837NH
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Symbol
Test Condition
Min
Typ
Max
Unit
t
9.0
19.6
28
14
29.3
38.7
7
d(ON)
Rise Time
t
r
V
V
= 11.5 V, V = 15 V,
DS
GS
D
ns
I
= 15 A, R = 3.0 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
4.7
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
T = 25°C
0.83
0.71
23.5
11.3
12.2
8
1.2
J
= 0 V,
= 30 A
GS
V
I
S
T = 125°C
J
Reverse Recovery Time
Charge Time
t
RR
t
a
ns
nC
nH
V
= 0 V, dI /dt = 100 A/ms,
S
GS
I
S
= 30 A
Discharge Time
t
b
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance
Q
RR
L
0.93
0.005
1.84
0.9
S
D
G
L
L
T = 25°C
A
Gate Inductance
Gate Resistance
R
G
W
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
NTMFS4837NH
90
85
80
75
70
65
60
55
50
45
40
35
30
25
20
15
10
5
100
7 V to 10 V
T = 25°C
J
90
80
70
60
50
40
30
20
10
0
4.2 V
4.4 V to 5.0 V
4.0 V
3.8 V
3.6 V
T = 125°C
J
T = 25°C
J
3.4 V
T = −55°C
V
GS
= 3.2 V
J
0
0
1
2
3
4
5
1
2
3
4
5
6
7
V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
V , GATE−TO−SOURCE VOLTAGE (V)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.01
0.0095
0.009
0.012
0.011
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.003
T = 25°C
J
I
= 30 A
D
T = 25°C
0.0085
0.008
J
0.0075
0.007
V
= 4.5 V
GS
0.0065
0.006
0.0055
0.005
0.0045
0.004
V
GS
= 11.5 V
0.0035
0.003
0.0025
0.002
0.0015
0.001
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
11
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85
V , GATE−TO−SOURCE VOLTAGE (V)
GS
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance versus
Gate−to−Source Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
10000
1000
100
10
V
GS
= 0 V
I
V
= 30 A
D
= 10 V
T = 150°C
J
GS
T = 125°C
J
1
T = 25°C
J
0.1
−50 −30 −10
0
20 40 60 80 100 120 140 160
5
10
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
J
V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
versus Voltage
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4
NTMFS4837NH
12
3000
2800
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
Q
T
T = 25°C
J
10.5
9
C
ISS
7.5
6
4.5
3
Q
Q
GD
GS
C
OSS
V
V
I
= 15 V
= 11.5 V
= 30 A
DD
GS
600
400
200
0
15
1.5
0
D
T = 25°C
J
C
RSS
0
5
10
15
20
25
30
35
10
5
0
5
10
15
20
25
Q , TOTAL GATE CHARGE (nC)
g
V
GS
V
DS
Figure 8. Gate−to−Source and Drain−to−Source
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Voltage vs. Total Gate Charge
Figure 7. Capacitance Variation
30
25
20
15
10
5
100
10
1
V
= 0 V
GS
T = 25°C
J
t
d(off)
t
r
t
d(on)
t
f
V
= 15 V
= 15 A
= 11.5 V
DS
I
D
V
GS
0
0.5
1
10
R , GATE RESISTANCE (W)
100
0.6
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.7
0.8
0.9
1.0
V
G
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
1000
100
10
150
140
130
120
110
100
90
80
70
60
50
V
= 20 V
I
D
= 31 A
GS
Single Pulse
= 25°C
T
C
10 ms
100 ms
1 ms
40
30
20
10
0
R
Limit
DS(on)
Thermal Limit
Package Limit
10 ms
dc
1
0.1
1
10
100
25
50
75
100
125
150
175
V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
T , STARTING JUNCTION TEMPERATURE (°C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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5
NTMFS4837NH
120
100
80
60
40
20
0
V
= 1.5 V
DS
0
10 20 30 40 50 60 70 80 90 100 110 120
DRAIN CURRENT (A)
Figure 13. GFS versus Drain Current
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6
NTMFS4837NH
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA−01
ISSUE D
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
6
5
DIM
A
A1
b
MIN
0.90
0.00
0.33
0.23
NOM
1.00
−−−
0.41
0.28
MAX
1.10
0.05
0.51
0.33
4 X
q
E1
2
c
D
5.15 BSC
4.90
−−−
6.15 BSC
5.80
−−−
1.27 BSC
0.61
−−−
0.61
0.17
D1
D2
E
E1
E2
e
G
K
L
L1
M
4.50
3.50
5.10
4.22
c
A1
5.50
3.45
6.10
4.30
1
2
3
4
0.51
0.51
0.51
0.05
3.00
0
0.71
−−−
0.71
0.20
3.80
TOP VIEW
C
3 X
e
SEATING
PLANE
0.10
0.10
C
C
3.40
−−−
DETAIL A
q
12
A
_
_
SOLDERING FOOTPRINT*
SIDE VIEW
DETAIL A
3X
4X
1.270
0.750
4X
1.000
b
8X
STYLE 1:
0.10
0.05
C
c
A
B
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
e/2
L
0.965
1
4
5. DRAIN
6. DRAIN
K
0.29X05
0.475
1.330
2X
0.495
E2
4.530
M
3.200
L1
6
5
D2
BOTTOM VIEW
G
2X
1.530
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NTMFS4837NH/D
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