NTMFS4927NC [ONSEMI]
Single NâChannel Power MOSFET;
| 型号： | NTMFS4927NC |
| 厂家： | 
ONSEMI |
| 描述： | Single NâChannel Power MOSFET |
| 文件： | 总7页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTMFS4927N,
NTMFS4927NC
Power MOSFET
30 V, 38 A, Single N−Channel, SO−8 FL
Features
• Low R
to Minimize Conduction Losses
DS(on)
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• Optimized for 5 V, 12 V Gate Drives
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• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
Compliant
Applications
7.3 mW @ 10 V
30 V
38 A
12.0 mW @ 4.5 V
• CPU Power Delivery
• DC−DC Converters
D (5,6)
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Symbol
Value
Unit
V
V
DSS
30
20
V
GS
V
G (4)
Continuous Drain
Current R
T = 25°C
I
D
13.6
A
A
q
JA
T = 100°C
A
8.6
S (1,2,3)
N−CHANNEL MOSFET
(Note 1)
Power Dissipation
T = 25°C
P
2.70
W
A
A
D
D
D
D
R
(Note 1)
q
JA
MARKING
DIAGRAM
Continuous Drain
T = 25°C
A
I
20.4
12.9
6.04
D
Current R
(Note 1)
≤ 10 s
q
JA
T = 100°C
A
D
Power Dissipation
≤ 10 s (Note 1)
T = 25°C
A
P
W
A
S
S
S
G
D
D
R
q
JA
1
Steady
State
4927N
AYWZZ
Continuous Drain
Current R
T = 25°C
A
I
D
7.9
5.0
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
q
JA
T = 100°C
A
(Note 2)
D
Power Dissipation
T = 25°C
A
P
0.92
W
A
R
(Note 2)
4927N = Specific Device Code
q
JA
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
Continuous Drain
Current R
T
= 25°C
=100°C
= 25°C
I
D
38
24
C
q
JC
T
C
(Note 1)
Power Dissipation
T
C
P
20.8
W
A
R
(Note 1)
q
JC
Pulsed Drain
Current
T = 25°C, t = 10 ms
I
DM
160
100
A
p
ORDERING INFORMATION
Current Limited by Package
T = 25°C
A
I
A
Dmax
†
Device
Package
Shipping
Operating Junction and Storage
Temperature
T ,
−55 to
+150
°C
J
NTMFS4927NT1G
NTMFS4927NCT1G
SO−8 FL
(Pb−Free)
1500 /
T
STG
Tape & Reel
Source Current (Body Diode)
Drain to Source DV/DT
I
S
21
6.0
20
A
SO−8 FL
(Pb−Free)
5000 /
NTMFS4927NT3G
NTMFS4927NCT3G
dV/d
V/ns
mJ
t
Tape & Reel
Single Pulse Drain−to−Source Avalanche
Energy (T = 25°C, V = 24 V, V = 20 V,
E
AS
J
DD
GS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
I = 20 A , L = 0.1 mH, R = 25 W)
L
pk
G
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
°C
L
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
June, 2012 − Rev. 8
NTMFS4927N/D
NTMFS4927N, NTMFS4927NC
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
6.0
Unit
Junction−to−Case (Drain)
R
q
JC
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State (Note 4)
Junction−to−Ambient – (t ≤ 10 s) (Note 3)
R
46.3
136.2
20.7
q
JA
°C/W
R
q
JA
R
q
JA
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
= 0 V, I = 250 mA
30
34
V
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
(transient)
V
VGS = 0 V, I
case
= 8.4 A,
(BR)DSSt
D(aval)
= 25°C, t
T
= 100 ns
transient
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
24
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
= 24 V
T = 25°C
1.0
10
DSS
GS
DS
J
V
mA
T = 125°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
I
V
= 0 V, V
=
20 V
100
nA
GSS
DS
GS
V
V
= V , I = 250 mA
1.32
1.6
3.7
5.8
5.7
9.6
9.2
40
2.2
7.3
12
V
GS(TH)
GS
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
J
mV/°C
GS(TH)
R
V
= 10 V
I
D
I
D
I
D
I
D
= 30 A
= 15 A
= 30 A
= 15 A
DS(on)
GS
GS
mW
V
= 4.5 V
Forward Transconductance
g
FS
V
= 1.5 V, I = 15 A
S
DS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
913
366
ISS
Output Capacitance
Reverse Transfer Capacitance
Capacitance Ratio
C
V
= 0 V, f = 1 MHz, V = 15 V
pF
OSS
RSS
GS
DS
C
108
C
/
V
GS
= 0 V, V = 15 V, f = 1 MHz
0.118
0.237
RSS
ISS
DS
C
Total Gate Charge
Q
8.0
1.6
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Q
G(TH)
V
= 4.5 V, V = 15 V; I = 30 A
nC
nC
GS
DS
D
Q
3.1
GS
GD
Q
3.1
Q
V
= 10 V, V = 15 V; I = 30 A
16.0
G(TOT)
GS
DS
D
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
t
9.2
25.5
14.0
4.4
d(ON)
t
r
V
= 4.5 V, V = 15 V,
DS
GS
D
ns
I
= 15 A, R = 3.0 W
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS4927N, NTMFS4927NC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Symbol
Test Condition
Min
Typ
Max
Unit
t
6.5
21.0
18.0
3.0
d(ON)
t
r
V
= 10 V, V = 15 V,
DS
GS
D
ns
I
= 15 A, R = 3.0 W
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.87
0.76
21.4
10.5
10.9
8.4
1.1
SD
J
V
S
= 0 V,
GS
V
I
= 30 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
RR
t
ns
a
V
= 0 V, dIS/dt = 100 A/ms,
GS
I
S
= 30 A
Discharge Time
t
b
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance
Q
nC
RR
L
L
1.00
0.005
1.84
nH
nH
nH
W
S
D
G
T = 25°C
A
Gate Inductance
L
Gate Resistance
R
0.90
2.2
G
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
NTMFS4927N, NTMFS4927NC
TYPICAL CHARACTERISTICS
100
90
80
70
60
50
40
30
20
100
10 V
T = −55°C
J
4.5 V
90
T = 25°C
J
80
70
60
50
40
30
20
4.0 V
3.5 V
T = 25°C
J
T = 125°C
J
V
DS
= 10 V
3.0 V
V
= 2.5 V
10
0
10
0
GS
0
1
2
3
4
5
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.015
0.014
0.013
0.012
0.011
0.010
0.009
0.008
0.007
0.006
0.019
0.017
0.015
0.013
0.011
I
= 30 A
D
T = 25°C
V
V
= 4.5 V
GS
0.009
0.007
= 10 V
60
GS
0.005
0.003
0.005
0.004
3
4
5
6
7
8
9
10
10 20
30
40
50
70
80
90 100
V
GS
(V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
10,000
1,000
I
V
= 30 A
D
T = 150°C
J
= 10 V
GS
T = 125°C
J
100
10
T = 85°C
J
0.7
0.6
−50 −25
V
GS
= 0 V
25
0
25
50
75
100 125
150
5
10
15
20
30
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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4
NTMFS4927N, NTMFS4927NC
TYPICAL CHARACTERISTICS
1200
1000
11
QT
10
9
T = 25°C
J
C
V
GS
= 0 V
iss
8
800
600
400
7
6
5
C
C
oss
Qgs
Qgd
4
T = 25°C
J
3
V
GS
V
DD
= 10 V
= 15 V
2
200
0
rss
1
0
I
D
= 30 A
0
5
10
15
20
25
30
0
1
2
3
4
5
6 7 8 9 10 11 12 13 14 15 16 17
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
100
30
25
20
15
10
V
GS
= 0 V
V
V
= 10 V
= 15 V
= 15 A
GS
DD
t
t
d(off)
I
D
t
f
r
t
10
1
d(on)
T = 25°C
T = 125°C
J
J
5
0
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.6
0.7
0.8
0.9
1.0
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
20
18
16
14
12
10
8
1000
100
10
I
D
= 20 A
10 ms
100 ms
1 ms
0 V < V < 10 V
Single Pulse
GS
1
10 ms
6
T
C
= 25°C
0.1
dc
4
R
Limit
DS(on)
Thermal Limit
Package Limit
2
0
0.01
0.01
0.1
1
10
100
25
50
75
100
125
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T , STARTING JUNCTION TEMPERATURE (°C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
NTMFS4927N, NTMFS4927NC
TYPICAL CHARACTERISTICS
100
10
D = 0.5
0.2
0.1
0.05
0.02
1
0.01
0.1
0.01
SINGLE PULSE
0.000001
0.00001
0.0001
0.001
0.01
t, TIME (s)
0.1
1
10
100
1000
Figure 13. Thermal Response
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6
NTMFS4927N, NTMFS4927NC
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE G
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
MIN
0.90
0.00
0.33
0.23
NOM
1.00
−−−
0.41
0.28
MAX
1.10
0.05
0.51
0.33
4 X
q
E1
2
c
D
5.15 BSC
4.90
−−−
6.15 BSC
5.80
−−−
1.27 BSC
0.61
1.35
0.61
0.17
D1
D2
E
E1
E2
e
G
K
L
L1
M
4.50
3.50
5.10
4.22
c
A1
5.50
3.45
6.10
4.30
1
2
3
4
0.51
1.20
0.51
0.05
3.00
0
0.71
1.50
0.71
0.20
3.80
TOP VIEW
C
3 X
e
SEATING
PLANE
0.10
0.10
C
C
3.40
−−−
DETAIL A
q
12
A
_
_
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
SIDE VIEW
SOLDERING FOOTPRINT*
DETAIL A
3X
4X
5. DRAIN
1.270
0.750
b
8X
4X
1.000
0.10
0.05
C
c
A
B
e/2
L
1
4
0.965
K
0.29X05
0.475
1.330
2X
0.495
E2
PIN 5
(EXPOSED PAD)
4.530
M
L1
3.200
D2
BOTTOM VIEW
G
2X
1.530
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
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NTMFS4927N/D
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