NTMFS4C022NT1G [ONSEMI]
Power MOSFET;
| 型号： | NTMFS4C022NT1G |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET |
| 文件： | 总6页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTMFS4C022N
Power MOSFET
30 V, 2.1 mW, 136 A, Single N−Channel,
SO−8FL
Features
• Small Footprint (5x6 mm) for Compact Design
www.onsemi.com
• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
V
R
MAX
I MAX
D
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
(BR)DSS
DS(ON)
Compliant
1.7 mW @ 10 V
2.4 mW @ 4.5 V
30 V
136 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
30
Unit
V
V
DSS
D (5,6)
Gate−to−Source Voltage
Continuous Drain Cur-
V
"20
136
V
GS
T
T
= 25°C
= 25°C
I
A
C
D
rent R
(Notes 1, 3)
q
JC
Steady
State
G (4)
Power Dissipation R
(Notes 1, 3)
P
64
30
W
A
q
C
D
JC
Continuous Drain Cur-
rent R (Notes 1, 2, 3)
T = 25°C
A
I
S (1,2,3)
N−CHANNEL MOSFET
D
q
JA
Steady
State
Power Dissipation R
(Notes 1, 2, 3)
T = 25°C
A
P
3.1
W
q
D
JA
MARKING
DIAGRAM
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
900
A
A
p
Operating Junction and Storage Temperature
T , T
−55 to
150
°C
J
stg
D
S
S
S
G
D
D
1
Source Current (Body Diode)
I
53
A
S
4C022N
AYWZZ
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
Single Pulse Drain−to−Source Avalanche
E
AS
549
mJ
Energy (I
= 11 A)
L(pk)
D
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
°C
L
A
Y
= Assembly Location
= Year
= Work Week
= Lot Traceability
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
W
ZZ
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol
Value
Unit
ORDERING INFORMATION
Junction−to−Case − Steady State (Note 2)
Junction−to−Ambient − Steady State (Note 2)
R
1.95
40
°C/W
q
q
JC
†
Device
Package
Shipping
R
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
NTMFS4C022NT1G
SO−8FL
(Pb−Free)
1500 /
Tape & Reel
2
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
NTMFS4C022NT3G
SO−8FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
June, 2016 − Rev. 0
NTMFS4C022N/D
NTMFS4C022N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
30
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
18.2
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
V
= 0 V,
= 24 V
T = 25 °C
1
DSS
GS
DS
J
mA
T = 125°C
J
10
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
100
nA
GSS
DS
GS
GS
V
V
= V , I = 250 mA
1.3
2.2
V
GS(TH)
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
4.8
1.4
2.0
136
1.0
mV/°C
GS(TH)
J
R
V
= 10 V
I
I
= 30 A
= 30 A
1.7
2.4
DS(on)
GS
D
mW
V
GS
= 4.5 V
D
Forward Transconductance
Gate Resistance
g
FS
V
= 3 V, I = 30 A
S
DS
D
R
T = 25 °C
A
W
G
CHARGES AND CAPACITANCES
Input Capacitance
C
3071
1673
67
ISS
Output Capacitance
C
V
= 0 V, f = 1 MHz, V = 15 V
pF
OSS
RSS
GS
DS
Reverse Transfer Capacitance
Total Gate Charge
C
Q
20.8
4.9
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Q
G(TH)
V
GS
= 4.5 V, V = 15 V; I = 30 A
nC
nC
DS
D
Q
8.5
GS
GD
Q
4.7
Q
V
GS
= 10 V, V = 15 V,
45.2
G(TOT)
DS
I
D
= 30 A
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
14
32
27
17
d(ON)
Rise Time
t
r
V
GS
= 4.5 V, V = 15 V, I = 15 A,
DS
D
ns
V
R
= 3.0 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.75
0.6
47
1.1
SD
J
V
= 0 V,
= 10 A
GS
I
S
T = 125°C
J
Reverse Recovery Time
Charge Time
t
RR
t
23
ns
a
V
= 0 V, dI /dt = 100 A/ms,
S
GS
I
S
= 30 A
Discharge Time
t
b
24
Reverse Recovery Charge
Q
39
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS4C022N
TYPICAL CHARACTERISTICS
250
250
225
200
175
150
125
100
75
V
DS
= 3 V
T = 25°C
J
4.5 V
3.8 V
225
200
175
150
125
100
75
3.6 V
3.4 V
3.2 V
3.0 V
V
GS
= 10 V
T = 150°C
J
2.8 V
2.6 V
50
50
T = 25°C
J
T = −55°C
J
25
25
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
1.5
2
2.5
3
3.5
4
4.5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
3.0
I
= 30 A
T = 25°C
D
J
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
T = 25°C
J
V
= 4.5 V
GS
V
= 10 V
GS
3
4
5
6
7
8
9
10
0
25 50
75 100 125 150 175 200 225 250
I , DRAIN CURRENT (A)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
D
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.8
10000
1000
V
GS
= 0 V
I
V
= 30 A
D
T = 125°C
J
= 10 V
GS
1.6
1.4
1.2
1.0
0.8
0.6
T = 100°C
J
T = 85°C
J
100
10
0
5
10
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
15
20
25
30
−50 −25
0
25
50
75
100
125 150
T , JUNCTION TEMPERATURE (°C)
J
V
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTMFS4C022N
TYPICAL CHARACTERISTICS
12
11
18
15
12
9
10000
1000
100
Q
T
C
iss
10
9
8
7
6
5
4
3
2
1
0
C
oss
V
GS
V
DS
Q
gd
6
Q
gs
C
T = 25°C
J
DS
rss
V
= 15 V
V
= 0 V
GS
3
I
D
= 30 A
T = 25°C
J
f = 1 MHz
0
10
0.1
1
10
100
0
5
10 15 20 25 30 35 40 45 50
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000.0
100.0
10.0
1.0
1000
100
10
V
= 15 V
= 15 A
= 4.5 V
DD
V
GS
= 0 V
I
D
V
GS
t
d(off)
t
f
T = 150°C
J
t
r
T = 25°C
J
t
d(on)
T = −55°C
J
0.1
0.1
1
10
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
R , GATE RESISTANCE (W)
G
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
1 ms
10 ms
100
10
1
10 ms
V
T
≤ 10 V
= 25°C
GS
C
100 ms
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
NTMFS4C022N
TYPICAL CHARACTERISTICS
100
10
R
Steady State = 40°C/W
q
JA
Duty Cycle = 50%
20%
10%
5%
2
P
CB
Cu Area = 650 mm
2%
1%
1
P
CB
Cu Thk = 2 oz
0.1
0.01
0.001
Single Pulse
1E−06
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
1E+02
1E+03
PULSE TIME (sec)
Figure 12. Thermal Impedance (Junction−to−Ambient)
100
10
1
T
= 25°C
J(initial)
T
= 100°C
J(initial)
1.00E−04
1.00E−03
1.00E−02
TIME IN AVALANCHE (s)
Figure 13. Avalanche Characteristics
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5
NTMFS4C022N
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE M
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
DETAIL A
PLANE
0.10
0.10
C
C
3.00
0
3.80
q
−−−
12
A
_
_
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
SIDE VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
DETAIL A
5. DRAIN
2X
8X b
A B
0.495
4.560
0.10
0.05
C
c
2X
e/2
e
1.530
L
1
4
K
3.200
1.330
4.530
E2
PIN 5
(EXPOSED PAD)
M
L1
2X
0.905
1
D2
BOTTOM VIEW
G
0.965
4X
1.000
4X
1.270
PITCH
0.750
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTMFS4C022N/D
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