NTMFS4H013NF [ONSEMI]
Power MOSFET;型号: | NTMFS4H013NF |
厂家: | ONSEMI |
描述: | Power MOSFET |
文件: | 总6页 (文件大小:96K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NTMFS4H013NF
Power MOSFET
25 V, 269 A, Single N−Channel, SO−8FL
Features
• Integrated Schottky Diode
• Optimized Design to Minimize Conduction and Switching Losses
• Optimized Package to Minimize Parasitic Inductances
• Optimized material for improved thermal performance
www.onsemi.com
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
V
GS
MAX R
TYP Q
GTOT
DS(on)
Applications
4.5 V
10 V
1.4 mW
26 nC
56 nC
• High Performance DC-DC Converters
• System Voltage Rails
• Netcom, Telecom
• Servers & Point of Load
0.9 mW
PIN CONNECTIONS
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
SO8−FL (5 x 6 mm)
Parameter
Drain-to-Source Voltage
Symbol
Value
25
Units
V
DSS
V
V
A
Gate-to-Source Voltage
V
GS
20
Continuous Drain Current R
(T = 25°C, Note 1)
A
I
D
43
q
JA
JC
(Top View)
(Bottom View)
Power Dissipation R
P
D
2.70
269
104
W
A
q
JA
(T = 25°C, Note 1)
A
Continuous Drain Current R
(T = 25°C, Note 1)
C
I
D
q
N−CHANNEL MOSFET
D
(5−8)
Power Dissipation R
P
D
W
q
JC
(T = 25°C, Note 1)
C
Pulsed Drain Current (t = 10 ms)
I
505
390
A
p
DM
Single Pulse Drain-to-Source Avalanche
E
mJ
AS
G
Energy (Note 1) (I = 51 A , L = 0.3 mH)
L
pk
(4)
Drain to Source dV/dt
dV/dt
7
V/ns
°C
Maximum Junction Temperature
Storage Temperature Range
T
150
J(max)
S
(1, 2, 3)
T
STG
−55 to
150
°C
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
Lead Temperature Soldering Reflow (SMD
Styles Only), Pb-Free Versions (Note 2)
T
SLD
260
°C
this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Values based on copper area of 645 mm (or 1 in ) of 2 oz copper thickness
and FR4 PCB substrate.
2
2
2. For more information, please refer to our Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
3. This is the absolute maximum rating. Parts are 100% UIS tested at T = 25°C,
J
V
GS
= 10 V, I = 33 A, E = 164 mJ.
L AS
THERMALCHARACTERISTICS
Parameter
Symbol
Max
Units
Thermal Resistance,
Junction-to-Ambient (Note 1 and 4)
Junction-to-Case (Note 1 and 4)
°C/W
R
40.0
1.5
q
JA
JC
R
q
4. Thermal Resistance R
and R
as defined in JESD51−3.
JC
q
q
JA
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
October, 2014 − Rev. 0
NTMFS4H013NF/D
NTMFS4H013NF
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
25
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
34.5
(BR)DSS
mV/°C
T
J
V
V
= 0 V,
= 20 V
GS
DS
Zero Gate Voltage Drain Current
I
T = 25 °C
J
500
mA
DSS
GSS
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
I
V
= 0 V, V = +20 V
+100
nA
DS
GS
V
V
= V , I = 250 mA
1.2
2.1
V
GS(TH)
GS
DS
D
Negative Threshold Temperature Coefficient
V
/T
4.6
0.72
1.1
mV/°C
GS(TH)
J
V
= 10 V
I
I
= 30 A
= 30 A
0.9
1.4
GS
D
Drain−to−Source On Resistance
Forward Transconductance
R
mW
DS(on)
V
GS
= 4.5 V
D
g
FS
V
= 12 V, I = 15 A
119
S
DS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
3923
2537
114
26
ISS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
OSS
C
RSS
V
= 0 V, f = 1 MHz, V = 12 V
pF
nC
GS
DS
Q
Q
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Q
2.9
G(TH)
V
GS
= 4.5 V, V = 12 V; I = 30 A
DS D
Q
10.7
5.8
GS
Q
GD
V
GS
= 10 V, V = 12 V; I = 30 A
56
nC
G(TOT)
DS
D
Gate Resistance
R
T = 25°C
A
1.0
W
G
SWITCHING CHARACTERISTICS, V = 4.5 V (Note 5)
GS
Turn−On Delay Time
Rise Time
t
17.6
55.1
29.4
9.96
d(ON)
t
r
V
GS
= 4.5 V, V = 12 V, I = 15 A,
DD D
ns
R
= 3.0 W
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
SWITCHING CHARACTERISTICS, V = 10 V (Note 5)
GS
Turn−On Delay Time
Rise Time
t
11.3
44.2
39.2
7.1
d(ON)
t
r
V
I
= 10 V, V = 12 V,
DD
GS
ns
V
= 15 A, R = 3.0 W
D
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
T = 25°C
J
0.38
0.297
61.3
30.4
30.9
66
0.6
V
GS
= 0 V,
Forward Diode Voltage
V
SD
I
S
= 2.0 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
RR
t
a
ns
V
= 0 V, dIS/dt = 100 A/ms,
GS
I
S
= 30 A
Discharge Time
t
b
Reverse Recovery Charge
Q
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2
NTMFS4H013NF
TYPICAL CHARACTERISTICS
V
GS
= 10 V to 3.0 V
V
GS
= 2.8 V
160
140
120
100
80
160
140
120
100
80
V
DS
≤ 10 V
V
GS
= 2.6 V
T = 125°C
J
60
60
T = 25°C
J
40
40
V
= 2.4 V
= 2.0 V
GS
GS
20
0
20
0
T = −55°C
J
V
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5 4.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
4.0
3.5
1.2
1.1
1.0
0.9
V
= 4.5 V
GS
T = 25°C
D
J
3.0
2.5
2.0
1.5
1.0
I
= 30 A
T = 25°C
J
0.8
V
= 10 V
80
GS
0.7
0.6
0.5
0
2
3
4
5
6
7
8
9
10
20
40
60
100
120
140
160
V
GS
, GATE VOLTAGE (V)
−I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.8
1E−01
1E−02
1E−03
1E−04
1E−05
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
I
V
= 30 A
D
T = 150°C
J
= 10 V
GS
T = 125°C
J
T = 85°C
J
T = 25°C
J
1E−06
1E−07
0.8
0.7
−50 −25
0
25
50
75
100
125 150
5
10
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
15
20
25
T , JUNCTION TEMPERATURE (°C)
V
J
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
www.onsemi.com
3
NTMFS4H013NF
TYPICAL CHARACTERISTICS
5000
4500
4000
3500
3000
2500
2000
1500
1000
10
8
Q
T
C
C
iss
6
oss
T = 25°C
GS
f = 1 MHz
J
V
= 12 V
Q
Q
gd
gs
4
T = 25°C
DS
J
V
= 12 V
2
0
I
D
= 30 A
500
0
C
rss
0
5
10
15
20
25
0
8
16
24
32
40
48
56
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
160
140
120
100
80
1000
100
V
= 12 V
= 15 A
= 10 V
DS
t
d(off)
I
D
V
GS
t
f
T = 125°C
J
t
r
T = 25°C
J
t
d(on)
60
10
1
T = −55°C
J
40
20
0
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.6
0.7
0.8
0.9
1.0
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
180
160
140
120
100
80
1000
100
10
10 ms
I
D
= 33 A
100 ms
1 ms
10 ms
0 V ≤ V ≤ 10 V
GS
Single Pulse
1
T = 25°C
A
60
T = 150°C
J
40
R
Limit
dc
0.1
DS(on)
Thermal Limit
Package Limit
20
0
0.01
0.01
0.1
1
10
100
25
50
75
100
125
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T , STARTING JUNCTION TEMPERATURE (°C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
www.onsemi.com
4
NTMFS4H013NF
TYPICAL CHARACTERISTICS
100
10
50% Duty Cycle
20%
10%
5%
2%
1%
1
2
PCB Cu Area 645.16 mm
PCB Cu thk 2 oz
0.1
Single Pulse
0.000001 0.00001 0.0001
0.01
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
300
250
200
150
100
1000
100
10
1
50
0
0
20
40
60
80
100
120
140
1E−07 1E−06
1E−05
1E−04
1E−03 1E−02
I , DRAIN CURRENT (A)
D
PULSE WIDTH (sec)
Figure 14. GFS vs. ID
Figure 15. Avalanche Characteristics
ORDERING INFORMATION
Device
†
Package
Shipping
NTMFS4H013NFT1G
SO8−FL
(Pb-Free)
1500 / Tape & Reel
5000 / Tape & Reel
NTMFS4H013NFT3G
SO8−FL
(Pb-Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MARKING DIAGRAM
D
S
S
S
G
D
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
H13NF
AYWZZ
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
D
D
www.onsemi.com
5
NTMFS4H013NF
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE K
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
5.90
3.65
1.27 BSC
0.61
1.35
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
1
2
3
4
G
K
L
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
3 X
e
0.61
SEATING
L1
M
0.125 REF
3.40
−−−
PLANE
0.10
0.10
C
C
3.00
0
3.80
DETAIL A
q
12
A
_
_
STYLE 1:
SOLDERING FOOTPRINT*
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
SIDE VIEW
DETAIL A
3X
1.270
4X
0.750
5. DRAIN
4X
b
8X
1.000
0.10
0.05
C
c
A
B
e/2
L
0.965
1
4
0.29X05
0.475
1.330
K
2X
0.495
4.530
E2
PIN 5
(EXPOSED PAD)
M
3.200
L1
2X
1.530
D2
BOTTOM VIEW
G
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
NTMFS4H013NF/D
相关型号:
©2020 ICPDF网 联系我们和版权申明