NTMFS5C406NLT1G [ONSEMI]
单 N 沟道，功率 MOSFET，40V，362A，0.7mΩ;
| 型号： | NTMFS5C406NLT1G |
| 厂家： | 
ONSEMI |
| 描述： | 单 N 沟道，功率 MOSFET，40V，362A，0.7mΩ |
| 文件： | 总6页 (文件大小：163K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTMFS5C406NL
MOSFET – Power, Single,
N-Channel
40 V, 0.7 mW, 362 A
Features
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• Small Footprint (5x6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
• These Devices are Pb−Free and are RoHS Compliant
0.7 mW @ 10 V
1.1 mW @ 4.5 V
40 V
362 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
V
DSS
D (5,6)
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
362
256
179
90
A
C
D
q
JC
T
C
(Notes 1, 3)
Steady
State
G (4)
Power Dissipation
T
C
P
W
A
D
R
(Note 1)
q
JC
T
C
= 100°C
S (1,2,3)
N−CHANNEL MOSFET
Continuous Drain
Current R
T = 25°C
A
I
D
53
q
JA
T = 100°C
A
38
(Notes 1, 2, 3)
Steady
State
Power Dissipation
T = 25°C
A
P
3.9
1.9
900
W
D
MARKING
DIAGRAM
R
(Notes 1, 2)
q
JA
T = 100°C
A
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
D
A
p
1
S
S
S
G
D
D
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
J
stg
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
5C406L
AYWZZ
+175
Source Current (Body Diode)
I
S
149
498
A
D
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 32.5 A)
L(pk)
5C406L = Specific Device Code
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
A
= Assembly Location
= Year
Y
W
ZZ
= Work Week
= Lot Traceability
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Parameter
Symbol
Value
0.84
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
38.7
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
May, 2019 − Rev. 0
NTMFS5C406NL/D
NTMFS5C406NL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
40
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
16
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25 °C
10
DSS
GS
DS
J
V
= 40 V
mA
T = 125°C
J
250
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 280 mA
1.2
2.0
V
GS(TH)
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
−5.7
0.55
0.90
215
mV/°C
GS(TH)
J
R
V
= 10 V
I
I
= 50 A
= 50 A
0.7
1.1
DS(on)
GS
D
mW
V
GS
= 4.5 V
D
Forward Transconductance
g
FS
V
=15 V, I = 50 A
S
DS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
9400
4600
140
149
15.1
27
ISS
Output Capacitance
C
OSS
C
RSS
V
= 0 V, f = 1 MHz, V = 20 V
pF
GS
DS
Reverse Transfer Capacitance
Total Gate Charge
Q
V
GS
= 10 V, V = 20 V; I = 50 A
DS D
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
G(TH)
nC
V
Q
GS
GD
GP
V
GS
= 10 V, V = 20 V; I = 50 A
DS
D
Q
V
22
3.1
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
14
47
d(ON)
Rise Time
t
r
V
= 10 V, V = 20 V,
DS
GS
D
ns
V
I
= 50 A, R = 2.5 W
G
Turn−Off Delay Time
t
112
131
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.78
0.64
93
1.2
SD
RR
J
V
S
= 0 V,
GS
I
= 50 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
t
44
ns
a
V
= 0 V, dIS/dt = 100 A/ms,
GS
I
S
= 50 A
Discharge Time
t
50
b
Reverse Recovery Charge
Q
174
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS5C406NL
TYPICAL CHARACTERISTICS
500
500
450
400
350
300
250
200
150
100
VGS = 3.8 V to 10 V
450
400
350
300
250
200
150
100
50
V
DS
= 10 V
3.6 V
3.4 V
3.2 V
3.0 V
T = 25°C
J
2.8 V
2.6 V
50
0
T = 125°C
J
T = −55°C
J
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
, GATE−TO−SOURCE VOLTAGE (V)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
5
4
2.0
1.6
1.2
0.8
T = 25°C
DS
J
T = 25°C
J
I
= 50 A
3
2
1
0
V
V
= 4.5 V
= 10 V
GS
GS
0.4
0
2
3
4
5
6
7
8
9
10
10 30
50
70
90
110 130 150 170 190
V
GS
, GATE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.0
1.8
1M
100K
10K
1K
T = 175°C
V
I
= 10 V
= 50 A
J
GS
D
T = 150°C
J
1.6
T = 125°C
J
1.4
1.2
1.0
0.8
T = 85°C
J
100
T = 25°C
J
10
1
0.6
0.4
−50 −25
0
25
50
75 100 125 150 175
5
10
15
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
20
25
30
35
40
T , JUNCTION TEMPERATURE (°C)
V
J
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTMFS5C406NL
TYPICAL CHARACTERISTICS
10K
10K
10
9
8
7
6
5
C
ISS
C
OSS
1K
100
10
Q
Q
GD
4
3
2
1
0
GS
V
DS
= 20 V
C
RSS
V
= 0 V
GS
I
D
= 50 A
T = 25°C
J
T = 25°C
J
f = 1 MHz
0
5
10
15
20
25
30
35
40
0
30
60
90
120
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100
10
10K
1K
V = 0 V
GS
V
V
= 10 V
= 20 V
= 50 A
GS
DS
I
D
t
d(off)
t
f
t
t
r
100
T = 125°C
J
d(on)
10
1
T = 25°C
T = −55°C
J
J
1
0.3
1
10
R , GATE RESISTANCE (W)
100
0.4
0.5
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.6
0.7
0.8
0.9
1.0
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
100
T
= 25°C
J(initial)
10 ms
T
= 100°C
J(initial)
10
1
10
V
≤ 10 V
0.5 ms
1 ms
GS
Single Pulse
= 25°C
T
C
10 ms
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
1
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
NTMFS5C406NL
TYPICAL CHARACTERISTICS
100
10
50% Duty Cycle
20%
10%
5%
2%
1%
1
0.1
Single Pulse
0.0001
0.01
0.000001
0.00001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NTMFS5C406NLT1G
5C406L
DFN5
(Pb−Free)
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
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