NTMFS5C442NL_17 [ONSEMI]
Power MOSFET;
| 型号： | NTMFS5C442NL_17 |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET |
| 文件： | 总6页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTMFS5C442NL
Power MOSFET
40 V, 2.5 mW, 130 A, Single N−Channel
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
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G
• These Devices are Pb−Free and are RoHS Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
2.5 mW @ 10 V
3.7 mW @ 4.5 V
40 V
130 A
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
V
DSS
Gate−to−Source Voltage
V
GS
20
V
D (5)
Continuous Drain
Current R
(Notes 1, 3)
T
= 25°C
I
130
A
C
D
q
JC
T
C
= 100°C
81
Steady
State
Power Dissipation
T
C
= 25°C
P
69
28
27
W
A
D
R
(Note 1)
q
JC
T
C
= 100°C
G (4)
Continuous Drain
Current R
T = 25°C
A
I
D
q
JA
S (1,2,3)
N−CHANNEL MOSFET
T = 100°C
A
17
(Notes 1, 2, 3)
Steady
State
Power Dissipation
T = 25°C
A
P
3.1
1.2
900
W
D
R
(Notes 1 & 2)
q
JA
T = 100°C
A
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
MARKING
DIAGRAM
Operating Junction and Storage Temperature
T , T
−55 to
+175
°C
J
stg
D
1
S
S
S
G
D
D
Source Current (Body Diode)
I
77
A
S
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
5C442L
AYWZZ
Single Pulse Drain−to−Source Avalanche
E
AS
265
mJ
Energy (I
= 10 A)
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
°C
D
L
5C442L = Specific Device Code
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
A
= Assembly Location
= Year
Y
W
ZZ
= Work Week
= Lot Traceability
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case − Steady State
R
1.8
41
°C/W
q
q
JC
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
Junction−to−Ambient − Steady State (Note 2)
R
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
package dimensions section on page 5 of this data sheet.
2
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
April, 2017 − Rev. 4
NTMFS5C442NL/D
NTMFS5C442NL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
40
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
24.8
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
V
= 0 V,
= 40 V
T = 25 °C
10
DSS
GS
DS
J
mA
T = 125°C
J
250
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 250 mA
1.2
2.0
V
GS(TH)
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
−5.4
2.0
mV/°C
GS(TH)
J
R
V
= 10 V
I
I
= 50 A
= 50 A
2.5
3.7
DS(on)
GS
D
mW
V
GS
= 4.5 V
2.9
D
Forward Transconductance
g
FS
V
DS
= 15 V, I = 50 A
116
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
3100
1100
37
ISS
Output Capacitance
C
OSS
C
RSS
V
= 0 V, f = 1 MHz, V = 25 V
pF
GS
DS
Reverse Transfer Capacitance
Total Gate Charge
Q
Q
V
GS
= 4.5 V, V = 32 V; I = 50 A
23
G(TOT)
G(TOT)
DS
D
Total Gate Charge
V
GS
= 10 V, V = 32 V; I = 50 A
50
DS
D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
5.0
9.8
6.7
3.1
nC
V
G(TH)
Q
GS
GD
GP
V
GS
= 4.5 V, V = 32 V; I = 50 A
DS D
Q
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
12
72
28
8.4
d(ON)
Rise Time
t
r
V
= 4.5 V, V = 32 V,
DS
GS
ns
V
I
D
= 50 A, R = 1.0 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.85
0.73
46
1.2
SD
RR
J
V
= 0 V,
= 50 A
GS
I
S
T = 125°C
J
Reverse Recovery Time
Charge Time
t
t
23
ns
a
V
= 0 V, dI /dt = 100 A/ms,
S
GS
I
S
= 50 A
Discharge Time
t
b
23
Reverse Recovery Charge
Q
40
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS5C442NL
TYPICAL CHARACTERISTICS
180
220
200
180
160
140
120
100
80
4.0 V
10 V to 4.5 V
V
DS
= 3 V
160
140
120
100
80
3.8 V
3.6 V
3.4 V
3.2 V
T = 25°C
J
60
3.0 V
2.8 V
60
40
40
T = 125°C
J
20
0
20
0
T = −55°C
J
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5 4.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
5.0
5.0
4.5
4.0
3.5
3.0
2.5
T = 25°C
D
J
T = 25°C
J
I
= 50 A
4.5
4.0
3.5
3.0
V
= 4.5 V
= 10 V
GS
V
GS
2.0
1.5
2.5
2.0
1.0
2
3
4
5
6
7
8
9
10
0
20 40 60 80 100 120 140 160 180 200
I , DRAIN CURRENT (A)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
D
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.0
100,000
10,000
1000
V
I
= 10 V
= 50 A
GS
1.8
1.6
1.4
1.2
1.0
D
T = 150°C
J
T = 125°C
J
T = 85°C
J
100
10
0.8
0.6
−50 −25
0
25
50
75 100 125 150 175
5
10
V
15
20
25
30
35
40
T , JUNCTION TEMPERATURE (°C)
, DRAIN−TO−SOURCE VOLTAGE (V)
J
DS
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTMFS5C442NL
TYPICAL CHARACTERISTICS
10
8
30
25
20
Q
3600
3200
2800
2400
2000
1600
1200
800
T
C
C
ISS
V
= 0 V
GS
6
4
T = 25°C
J
OSS
15
10
f = 1 MHz
Q
GD
Q
GS
V
= 32 V
DS
T = 25°C
J
2
0
I
D
= 50 A
5
0
400
0
C
RSS
0
5
10
15
20
25
30
35
40
0
4
8
12 16 20 24 28 32 36 40 44 48
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
100
46
T = 125°C
J
41
36
31
26
t
d(off)
t
f
t
r
T = 25°C
J
t
d(on)
21
16
10
1
T = −55°C
J
V
V
= 4.5 V
= 32 V
= 50 A
GS
11
DD
6
1
I
D
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.6
0.7
0.8
0.9
1.0
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
100
T
V
= 25°C
≤ 10 V
C
0.01 ms
0.1 ms
GS
T
= 25°C
J(initial)
10
1 ms
dc
T
= 100°C
J(initial)
10
1
10 ms
R
Limit
DS(on)
Thermal Limit
Package Limit
1
0.1
1
10
100
1E−04
1E−03
TIME IN AVALANCHE (s)
1E−02
V
DS
(V)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
NTMFS5C442NL
100
10
50% Duty Cycle
20%
10%
5%
2%
1%
2
1
NTMFS5C442NL 650 mm , 2 oz., Cu Single Layer Pad
0.1
Single Pulse
0.000001 0.00001 0.0001
0.01
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NTMFS5C442NLT1G
5C442L
DFN5
(Pb−Free)
1500 / Tape & Reel
5000 / Tape & Reel
NTMFS5C442NLT3G
5C442L
DFN5
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTMFS5C442NL
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE M
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
DETAIL A
PLANE
0.10
0.10
C
C
3.00
0
3.80
q
−−−
12
A
_
_
RECOMMENDED
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
SOLDERING FOOTPRINT*
SIDE VIEW
2X
0.495
DETAIL A
4.560
5. DRAIN
2X
8X b
A B
1.530
0.10
0.05
C
c
e/2
e
L
1
4
3.200
1.330
4.530
K
2X
E2
PIN 5
(EXPOSED PAD)
M
0.905
L1
1
0.965
4X
1.000
0.750
D2
BOTTOM VIEW
G
1.270
PITCH
4X
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTMFS5C442NL/D
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