NTMFS5C612NLWFT1G [ONSEMI]
Power MOSFET;型号: | NTMFS5C612NLWFT1G |
厂家: | ONSEMI |
描述: | Power MOSFET |
文件: | 总6页 (文件大小:79K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NTMFS5C612NL
Power MOSFET
60 V, 1.5 mW, 235 A, Single N−Channel
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
www.onsemi.com
G
• NTMFS5C612NLWF − Wettable Flank Option for Enhanced Optical
Inspection
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
• These Devices are Pb−Free and are RoHS Compliant
1.5 mW @ 10 V
2.3 mW @ 4.5 V
60 V
235 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
V
DSS
D (5)
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Current R
(Notes 1, 3)
T
= 25°C
= 100°C
= 25°C
I
235
166
167
83
A
C
D
q
JC
T
C
Steady
State
G (4)
Power Dissipation
T
C
P
W
A
D
R
(Note 1)
q
JC
T
C
= 100°C
S (1,2,3)
N−CHANNEL MOSFET
Continuous Drain
Current R
T = 25°C
A
I
D
36
q
JA
T = 100°C
A
25
(Notes 1, 2, 3)
Steady
State
MARKING
DIAGRAM
Power Dissipation
T = 25°C
A
P
3.8
1.9
900
W
D
R
(Notes 1 & 2)
q
JA
T = 100°C
A
D
1
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
S
S
S
G
D
D
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
XXXXXX
AYWZZ
Operating Junction and Storage Temperature
T , T
−55 to
+175
°C
J
stg
Source Current (Body Diode)
I
S
164
451
A
D
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
XXXXXX = 5C612L
Energy (I
= 17 A)
L(pk)
XXXXXX = (NTMFS5C612NL) or
XXXXXX = 612LWF
XXXXXX = (NTMFS5C612NLWF)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
0.9
Unit
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
JA
R
39
q
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
January, 2016 − Rev. 3
NTMFS5C612NL/D
NTMFS5C612NL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
60
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
12.7
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
V
= 0 V,
= 60 V
T = 25 °C
10
DSS
GS
DS
J
mA
T = 125°C
J
250
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 250 mA
1.2
2.0
V
GS(TH)
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
−5.76
1.2
mV/°C
GS(TH)
J
R
V
= 10 V
I
I
= 50 A
= 50 A
1.5
2.3
DS(on)
GS
D
mW
V
GS
= 4.5 V
1.65
151
D
Forward Transconductance
g
FS
V
= 15 V, I = 50 A
S
DS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
6660
2953
45
ISS
Output Capacitance
C
OSS
C
RSS
V
= 0 V, f = 1 MHz, V = 25 V
pF
GS
DS
Reverse Transfer Capacitance
Total Gate Charge
Q
Q
V
GS
= 4.5 V, V = 30 V; I = 50 A
41
G(TOT)
G(TOT)
DS
D
Total Gate Charge
V
GS
= 10 V, V = 30 V; I = 50 A
91
DS
D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
5
nC
V
G(TH)
Q
17.1
10.9
2.9
GS
GD
GP
V
GS
= 4.5 V, V = 30 V; I = 50 A
DS D
Q
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
19
51
47
18
d(ON)
Rise Time
t
r
V
= 4.5 V, V = 30 V,
DS
GS
ns
V
I
D
= 50 A, R = 1.0 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.78
0.66
78
1.2
SD
J
V
= 0 V,
= 50 A
GS
I
S
T = 125°C
J
Reverse Recovery Time
Charge Time
t
RR
t
36
ns
a
V
= 0 V, dIS/dt = 100 A/ms,
GS
I
S
= 50 A
Discharge Time
t
b
42
Reverse Recovery Charge
Q
105
nC
RR
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2
NTMFS5C612NL
TYPICAL CHARACTERISTICS
200
200
180
160
140
120
100
80
V
GS
= 10 V to 3.4 V
180
160
140
120
100
80
V
DS
≤ 10 V
3.2 V
3.0 V
2.8 V
T = 25°C
J
60
60
40
40
T = 125°C
J
20
0
20
0
T = −55°C
J
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5 4.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
2.1
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
T = 25°C
J
V
= 4.5 V
= 10 V
T = 25°C
D
GS
J
I
= 50 A
V
GS
0.7
0.6
0.5
1.2
1.1
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10
10 30
50 70
90 110 130 150 170 190
V
GS
, GATE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.2
1,000,000
100,000
10,000
1000
2.0
1.8
1.6
1.4
1.2
1.0
V
I
= 10 V
= 40 A
GS
T = 150°C
J
D
T = 125°C
J
T = 85°C
J
100
10
0.8
0.6
−50 −25
0
25
50
75 100 125 150 175
5
15
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
25
35
45
55
T , JUNCTION TEMPERATURE (°C)
V
J
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
www.onsemi.com
3
NTMFS5C612NL
TYPICAL CHARACTERISTICS
10,000
1000
10
30
25
20
Q
T
C
ISS
8
6
4
C
OSS
RSS
100
15
10
Q
GD
Q
GS
V
= 48 V
DS
C
T = 25°C
10
1
J
V
= 0 V
GS
2
0
I
D
= 50 A
5
0
T = 25°C
J
f = 1 MHz
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
80 90
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
100
V
V
= 4.5 V
= 30 V
= 50 A
GS
DD
t
d(off)
I
D
t
f
t
r
10
t
d(on)
10
1
T = 125°C
T = 25°C
T = −55°C
J
J
J
1
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
100
T
V
= 25°C
≤ 10 V
C
0.01 ms
GS
0.1 ms
1 ms
10 ms
T
= 25°C
J(initial)
T
= 100°C
dc
J(initial)
10
10
1
R
Limit
DS(on)
Thermal Limit
Package Limit
1
0.1
1
10
100
1E−04
1E−03
1E−02
V
DS
(V)
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
www.onsemi.com
4
NTMFS5C612NL
100
10
50% Duty Cycle
20%
10%
5%
2%
1%
2
1
NTMFS5C612NL 650 mm , 2 oz., Cu Single Layer Pad
0.1
Single Pulse
0.0001 0.001
0.01
0.000001 0.00001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NTMFS5C612NLT1G
5C612L
DFN5
(Pb−Free)
1500 / Tape & Reel
1500 / Tape & Reel
5000 / Tape & Reel
NTMFS5C612NLWFT1G
NTMFS5C612NLT3G
612LWF
5C612L
DFN5
(Pb−Free, Wettable Flanks)
DFN5
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
NTMFS5C612NL
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE M
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20
C
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
E1
2
q
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
PLANE
DETAIL A
0.10
0.10
C
C
3.00
0
3.80
12
q
−−−
A
_
_
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
SIDE VIEW
DETAIL A
5. DRAIN
RECOMMENDED
SOLDERING FOOTPRINT*
8X b
A B
0.10
0.05
C
c
e/2
e
2X
0.495
4.560
L
2X
1
4
1.530
K
3.200
1.330
E2
PIN 5
4.530
M
(EXPOSED PAD)
L1
2X
0.905
D2
BOTTOM VIEW
G
1
0.965
4X
1.000
1.270
PITCH
4X
0.750
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
NTMFS5C612NL/D
相关型号:
©2020 ICPDF网 联系我们和版权申明