NTMJS2D5N06CLTWG [ONSEMI]
功率 MOSFET,60 V,2.5 mΩ,150 A,单 N 沟道;型号: | NTMJS2D5N06CLTWG |
厂家: | ONSEMI |
描述: | 功率 MOSFET,60 V,2.5 mΩ,150 A,单 N 沟道 |
文件: | 总7页 (文件大小:349K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NTMJS2D5N06CL
Power MOSFET
60 V, 2.4 mW, 164 A, Single N−Channel
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
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G
• LFPAK8 Package, Industry Standard
• These Devices are Pb−Free and are RoHS Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
2.4 mW @ 10 V
3.3 mW @ 4.5 V
60 V
164 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
V
DSS
D (5,8)
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Current R
Steady
State
T
= 25°C
I
D
164
A
C
q
JC
T
C
= 100°C
116
(Notes 1, 3)
Power Dissipation
T
= 25°C
P
113
56
W
A
C
D
G (4)
R
(Note 1)
q
JC
T
C
= 100°C
Continuous Drain
Current R
Steady
State
T = 25°C
A
I
D
31
S (1,2,3)
N−CHANNEL MOSFET
q
JA
T = 100°C
A
22
(Notes 1, 2, 3)
Power Dissipation
T = 25°C
P
D
3.9
20
W
A
R
(Notes 1 & 2)
q
JA
T = 100°C
A
MARKING
DIAGRAM
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
900
A
A
p
D
D
D
D
Operating Junction and Storage Temperature
T , T
−55 to
+ 175
°C
J
stg
2D5N06
CL
AWLYW
Source Current (Body Diode)
I
94
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
565
mJ
LFPAK8
CASE 760AA
Energy (I
= 9 A)
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
1
S
S
S G
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2D5N06CL = Specific Device Code
A
WL
Y
= Assembly Location
= Wafer Lot
= Year
THERMAL RESISTANCE MAXIMUM RATINGS
W
= Work Week
Parameter
Symbol
Value
Unit
Junction−to−Case − Steady State
R
1.3
38
°C/W
q
JC
ORDERING INFORMATION
Junction−to−Ambient − Steady State (Note 2)
R
q
JA
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
March, 2019 − Rev. 0
NTMJS2D5N06CL/D
NTMJS2D5N06CL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
60
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
26
mV/°C
(BR)DSS
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25°C
10
mA
DSS
GS
DS
J
V
= 60 V
T = 125°C
J
250
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 135 mA
1.2
2.0
V
GS(TH)
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
−5.0
2.0
mV/°C
mW
GS(TH)
J
R
V
= 10 V
I
I
= 50 A
= 50 A
2.4
3.3
DS(on)
GS
D
V
GS
= 4.5 V
2.6
D
Forward Transconductance
g
FS
V
DS
=15 V, I = 50 A
286
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
3600
1700
28
pF
ISS
Output Capacitance
C
OSS
C
RSS
V
= 0 V, f = 1 MHz, V = 25 V
DS
GS
Reverse Transfer Capacitance
Total Gate Charge
Q
Q
V
GS
= 4.5 V, V = 48 V; I = 50 A
24
nC
G(TOT)
G(TOT)
DS
D
Total Gate Charge
V
GS
= 10 V, V = 48 V; I = 50 A
52
DS
D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
6.0
12
G(TH)
Q
GS
GD
GP
V
GS
= 10 V, V = 48 V; I = 50 A
DS
D
Q
V
4.5
3.0
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
10
55
37
8.5
ns
d(ON)
Rise Time
t
r
V
= 10 V, V = 48 V,
DS
GS
D
I
= 50 A, R = 2.5 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.8
0.75
55
1.2
V
SD
J
V
S
= 0 V,
GS
I
= 50 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
28
a
V
GS
= 0 V, dI /dt = 100 A/ms,
s
I
S
= 50 A
Discharge Time
28
b
Reverse Recovery Charge
Q
60
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTMJS2D5N06CL
TYPICAL CHARACTERISTICS
250
225
200
175
150
125
100
75
250
V
GS
= 4.0 V to 10 V
3.6 V
3.2 V
225
200
175
150
125
100
75
V
= 5 V
DS
T = 25°C
J
2.8 V
2.4 V
50
50
25
0
25
0
T = 125°C
J
T = −55°C
J
0
1.0
2.0
3.0
4.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5 4.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
3.0
2.8
2.6
2.4
2.2
2.0
9
8
7
6
5
4
3
T = 25°C
J
T = 25°C
D
J
I
= 50 A
V
= 4.5 V
= 10 V
GS
V
GS
1.8
1.6
2
1
2
3
4
5
6
7
8
9
10
0
20
40
60
80
100 120
140 160
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
1.E+06
1.E+05
1.E+04
1.E+03
2.0
1.8
1.6
1.4
1.2
1.0
V
I
= 10 V
= 50 A
GS
T = 175°C
D
J
T = 125°C
J
T = 85°C
J
1.E+02
1.E+01
0.8
0.6
−50 −25
0
25
50
75
100 125 150 175
5
15
25
35
45
55
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTMJS2D5N06CL
TYPICAL CHARACTERISTICS
10
10000
C
Q
ISS
T
9
C
OSS
8
7
6
5
4
3
2
1000
100
10
Q
GD
Q
GS
C
RSS
V
DS
= 48 V
1
V
GS
= 0 V
T = 25°C
J
T = 25°C
f = 1 MHz
J
1
0
I
D
= 50 A
0.1
0
10
20
30
40
50
60
0
10
20
30
40
50
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
1000
100
100
10
V
GS
= 0 V
t
d(off)
t
f
t
r
t
d(on)
1
10
1
T = 125°C
J
T = 25°C
J
T = −55°C
J
V
V
= 10 V
= 48 V
= 50 A
GS
DS
I
D
0.1
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
100
10
500 ms
1 ms
10 ms
T (initial)= 25°C
J
10
T
V
= 25°C
≤ 10 V
C
T (initial)= 100°C
J
GS
1
Single Pulse
R
Limit
0.1
DS(on)
Thermal Limit
Package Limit
1
0.01
1.E−05
1.E−04
1.E−03
1.E−02
0.1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T , TIME IN AVALANCHE (s)
AV
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NTMJS2D5N06CL
TYPICAL CHARACTERISTICS
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
0.01
Single Pulse
0.001
0.0000001 0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NTMJS2D5N06CLTWG
2D5N06CL
LFPAK8
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
LFPAK8 5x6
CASE 760AA
ISSUE C
DATE 13 AUG 2019
GENERIC
MARKING DIAGRAM*
XXXXXX = Specific Device Code
A
= Assembly Location
WL
Y
W
= Wafer Lot
= Year
= Work Week
XXXXXX
XXXXXX
AWLYW
*This information is generic. Please refer
to device data sheet for actual part
marking. Some products may not follow
the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON82475G
LFPAK8 5x6
PAGE 1 OF 1
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