NTMS4107NR2G [ONSEMI]
Power MOSFET 30V 18A 3.4 mOhm Single N-Channel SO-8;
| 型号： | NTMS4107NR2G |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET 30V 18A 3.4 mOhm Single N-Channel SO-8 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：127K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
NTMS4107N
Power MOSFET
30 V, 18 A, Single N−Channel, SO−8
Features
• Ultra Low R
(at 4.5 V ), Low Gate Resistance and Low Q
GS G
DS(on)
• Optimized for Low Side Synchronous Applications
• High Speed Switching Capability
http://onsemi.com
• Pb−Free Package is Available
V
R
TYP
I MAX
D
(BR)DSS
DS(on)
3.4 mW @ 10 V
4.7 mW @ 4.5 V
Applications
30 V
18 A
• Notebook Computer Vcore Applications
• Network Applications
• DC−DC Converters
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Symbol
Value
30
Unit
V
V
DSS
G
V
GS
$20
15
V
T = 25°C
I
D
A
A
Steady
State
S
Current (Note 1)
T = 85°C
A
11
t v10 s T = 25°C
18
A
MARKING DIAGRAM/
PIN ASSIGNMENT
Power Dissipation
(Note 1)
Steady
State
P
1.67
W
D
T = 25°C
A
8
1
8
t v10 s
2.5
11
Source
Source
Source
Gate
Drain
Drain
Drain
Drain
1
Continuous Drain
Current (Note 2)
T = 25°C
A
I
D
A
Steady T = 85°C
8.0
0.93
SO−8
A
State
CASE 751
STYLE 12
Power Dissipation
(Note 2)
P
D
W
T = 25°C
A
(Top View)
Pulsed Drain Current
t = 10 ms
I
56
−55 to 150
3.0
A
°C
A
p
DM
Operating Junction and Storage Temperature
Continuous Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
T , T
J stg
4107N = Specific Device Code
A
Y
= Assembly Location
= Year
I
S
E
512
mJ
AS
WW
G
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
Energy (V = 30 V, V = 10 V, I = 32 A,
DD
GS
PK
L = 1 mH, R = 25 W)
G
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
ORDERING INFORMATION
THERMAL RESISTANCE RATINGS
Rating
†
Device
Package
Shipping
Symbol
Max
75
Unit
Junction−to−Ambient − Steady State (Note 1)
Junction−to−Ambient − t v 10 s (Note 1)
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
NTMS4107NR2
SO−8
2500/Tape & Reel
2500/Tape & Reel
q
q
q
JA
JA
JA
R
R
50
NTMS4107NR2G
SO−8
(Pb−Free)
135
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1. Surface−mounted on FR4 board using 1″ sq. pad size
(Cu area = 1.127″ sq. [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.412″ sq.).
© Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
February, 2006 − Rev. 3
NTMS4107N/D
NTMS4107N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
30
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
21
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
T = 25°C
1.0
10
mA
DSS
J
V
GS
= 0 V, V = 24 V
DS
T = 125°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
= 0 V, V = $20 V
$100
nA
GSS
DS
GS
V
V
= V , I = 250 mA
1.0
2.5
V
GS(TH)
GS
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
7.4
4.7
3.4
25
mV/°C
mW
GS(TH)
J
R
V
= 4.5 V, I = 14 A
5.5
4.5
DS(on)
GS
D
V
= 10 V, I = 15 A
D
GS
DS
Forward Transconductance
g
FS
V
= 15 V, I = 18 A
S
D
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
6000
1030
550
45
pF
ISS
Output Capacitance
C
V
GS
= 0 V, f = 1.0 MHz, V = 15 V
DS
OSS
RSS
Reverse Transfer Capacitance
Total Gate Charge
C
Q
nC
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Q
6.5
G(TH)
V
GS
= 4.5 V, V = 15 V, I = 18 A
DS D
Q
16.3
19.3
0.60
GS
Q
GD
R
W
G
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
9.0
10
94
38
ns
d(ON)
Rise Time
t
r
V
I
= 10 V, V = 15 V,
DS
GS
= 1.0 A, R = 6.0 W
D
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.8
0.6
41
20
21
48
1.1
V
SD
J
V
GS
= 0 V, I = 3.0 A
S
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
a
V
GS
= 0 V, d /d = 100 A/ms,
IS t
I
= 3.0 A
S
Discharge Time
b
Reverse Recovery Charge
Q
nC
RR
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
NTMS4107N
TYPICAL PERFORMANCE CURVES
28
24
20
16
12
8
28
3.2 V
T = 25°C
J
V
DS
≥ 10 V
24
20
V
GS
= 4 V to 10 V
3.0 V
2.8 V
16
12
8
T = 125°C
J
T = 25°C
4
0
J
4
0
2.6 V
9
T = −55°C
J
0
1
2
3
4
5
6
7
8
10
0
1
2
3
4
5
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.008
0.008
T = 25°C
J
V
GS
= 10 V
0.007
0.006
0.005
0.004
0.003
0.002
0.007
0.006
0.005
0.004
0.003
0.002
V
= 4.5 V
= 10 V
GS
T = 125°C
J
T = 25°C
J
V
GS
T = −55°C
J
0.001
0
0.001
0
2
6
26
10
14
18
22
2
6
10
14
18
22
26
I
D,
DRAIN CURRENT (AMPS)
I
D,
DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
Figure 3. On−Resistance vs. Drain Current and
Temperature
2
1000000
100000
V
GS
= 0 V
I
V
= 16 A
D
= 12 V
GS
1.5
1
T = 150°C
J
10000
T = 125°C
J
1000
100
0.5
0
−50 −25
0
25
50
75
100 125
150
0
5
10
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
3
NTMS4107N
TYPICAL PERFORMANCE CURVES
10
8000
7000
T = 25°C
J
8
C
iss
6000
5000
4000
3000
V
GS
6
4
QT
Q
Q
GD
GS
2000
1000
0
2
0
C
oss
I
D
= 16 A
T = 25°C
J
C
rss
0
5
10
15
20
25
0
10
20
30 40 50
60 70 80 90 100
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−To−Source and
Drain−To−Source Voltage vs. Total Charge
1000
12
10
8
V
= 0 V
V
I
= 15 V
= 1 A
= 4.5 V
GS
DD
T = 25°C
J
D
V
GS
100
10
1
t
d(off)
6
t
f
t
d(on)
4
t
r
2
0
1
10
R , GATE RESISTANCE (OHMS)
100
0
0.2
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
SD
0.4
0.6
0.8
1
V
G
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10 ms
100 ms
10
1 ms
10 ms
V
GS
= 20 V
1
SINGLE PULSE
= 25°C
T
C
0.1
dc
R
LIMIT
DS(on)
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
http://onsemi.com
4
NTMS4107N
PACKAGE DIMENSIONS
SO−8
CASE 751−07
ISSUE AG
NOTES:
−X−
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
A
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
8
5
4
S
M
M
B
0.25 (0.010)
Y
1
K
−Y−
G
MILLIMETERS
DIM MIN MAX
INCHES
MIN
MAX
0.197
0.157
0.069
0.020
C
N X 45
_
A
B
C
D
G
H
J
K
M
N
S
4.80
3.80
1.35
0.33
5.00 0.189
4.00 0.150
1.75 0.053
0.51 0.013
SEATING
PLANE
−Z−
0.10 (0.004)
1.27 BSC
0.050 BSC
M
0.10
0.19
0.40
0
0.25 0.004
0.25 0.007
1.27 0.016
0.010
0.010
0.050
8
0.020
0.244
J
H
D
8
0
_
_
_
_
M
S
S
X
0.25 (0.010)
Z
Y
0.25
5.80
0.50 0.010
6.20 0.228
STYLE 12:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
7. DRAIN
8. DRAIN
SOLDERING FOOTPRINT*
1.52
0.060
7.0
4.0
0.275
0.155
0.6
0.024
1.270
0.050
mm
inches
ǒ
Ǔ
SCALE 6:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
NTMS4107N
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
NTMS4107N/D
相关型号：
NTMS4117NR2
TRANSISTOR 13300 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, CASE 751-07, SO-8, FET General Purpose Small Signal
ONSEMI
NTMS4118NR2G
TRANSISTOR 9000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 751-07, SOP-8, FET General Purpose Small Signal
ONSEMI
©2020 ICPDF网 联系我们和版权申明