NTMYS1D3N04CTWG [ONSEMI]
功率 MOSFET,单 N 沟道,40 V,1.15mΩ,252 A;型号: | NTMYS1D3N04CTWG |
厂家: | ONSEMI |
描述: | 功率 MOSFET,单 N 沟道,40 V,1.15mΩ,252 A |
文件: | 总7页 (文件大小:343K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NTMYS1D3N04C
MOSFET – Power, Single,
N-Channel
40 V, 1.15 mW, 252 A
Features
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• Small Footprint (5x6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
V
R
MAX
I MAX
D
• LFPAK Package, Industry Standard
(BR)DSS
DS(ON)
• These Devices are Pb−Free and are RoHS Compliant
40 V
1.15 mW @ 10 V
252 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
D (5,8)
V
DSS
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
252
178
134
67
A
C
D
G (4)
q
JC
T
C
(Notes 1, 3)
Steady
State
Power Dissipation
T
C
P
W
A
D
S (1,2,3)
N−CHANNEL MOSFET
R
(Note 1)
q
JC
T
C
= 100°C
Continuous Drain
Current R
T = 25°C
A
I
D
43
q
JA
T = 100°C
A
30
(Notes 1, 2, 3)
Steady
State
MARKING
DIAGRAM
Power Dissipation
T = 25°C
A
P
3.9
1.9
900
W
D
R
(Notes 1, 2)
q
JA
D
T = 100°C
A
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
1D3N04
C
AWLYW
Operating Junction and Storage Temperature
T , T
−55 to
°C
J
stg
LFPAK4
CASE 760AB
+ 175
Source Current (Body Diode)
I
S
112
A
1
Single Pulse Drain−to−Source Avalanche
E
AS
1621
mJ
S
S
S
G
Energy (I
= 21 A)
L(pk)
1D3N04C
A
= Specific Device Code
= Assembly Location
= Wafer Lot
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
WL
Y
= Year
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
W
= Work Week
THERMAL RESISTANCE MAXIMUM RATINGS
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Parameter
Symbol
Value
1.12
39
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
June, 2019 − Rev. 1
NTMYS1D3N04C/D
NTMYS1D3N04C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
40
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
20
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25°C
10
DSS
GS
DS
J
V
= 40 V
mA
T = 125°C
J
100
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 180 mA
2.5
3.5
V
mV/°C
mW
S
GS(TH)
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
V
/T
J
−8.0
0.96
143
GS(TH)
R
V
GS
= 10 V
I = 50 A
D
1.15
DS(on)
g
FS
V
=15 V, I = 50 A
DS D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
4855
2565
71
ISS
Output Capacitance
C
OSS
C
RSS
V
= 0 V, f = 1 MHz, V = 25 V
pF
GS
DS
Reverse Transfer Capacitance
Total Gate Charge
Q
V
GS
= 10 V, V = 20 V; I = 50 A
74
G(TOT)
DS
D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
12
G(TH)
nC
V
Q
20
GS
GD
GP
V
GS
= 10 V, V = 20 V; I = 50 A
DS
D
Q
V
16
4.5
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
15
22
48
17
d(ON)
Rise Time
t
r
V
= 10 V, V = 20 V,
DS
GS
D
ns
V
I
= 50 A, R = 2.5 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.73
0.6
70
1.2
SD
J
V
S
= 0 V,
GS
I
= 50 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
RR
t
40
ns
a
V
= 0 V, dIS/dt = 100 A/ms,
GS
I
S
= 50 A
Discharge Time
t
30
b
Reverse Recovery Charge
Q
105
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTMYS1D3N04C
TYPICAL CHARACTERISTICS
360
320
280
240
200
160
120
80
360
5.5 V
V
GS
= 6.5 V to 10 V
320
280
240
200
160
120
80
V
= 10 V
DS
6.0 V
4.8 V
T = 25°C
J
4.5 V
4.0 V
40
0
40
0
T = 125°C
J
T = −55°C
J
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
, DRAIN−TO−SOURCE VOLTAGE (V)
2.0 2.5
3.0
3.5
4.0
4.5
5.0
5.5 6.0
V
DS
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
6
5
4
3
2
50
45
40
35
30
25
20
15
10
T = 25°C
J
T = 25°C
D
J
I
= 50 A
V
GS
= 10 V
1
0
5
0
4
5
6
7
8
9
10
10
30
50
70
90
110
130
150
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.0
1.8
1.6
1.4
1.2
1E+06
1E+05
1E+04
1E+03
1E+02
V
= 10 V
= 50 A
GS
I
D
T = 150°C
J
T = 125°C
J
T = 85°C
J
T = 25°C
J
1.0
0.8
0.6
1E+01
1E+00
−50 −25
0
25
50
75
100 125 150 175
5
10
15
20
25
30
35
40
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTMYS1D3N04C
TYPICAL CHARACTERISTICS
10K
1K
10
C
ISS
9
8
7
6
5
C
OSS
Q
Q
GD
GS
4
3
2
1
0
100
10
C
V
= 20 V
V
= 0 V
RSS
DS
GS
T = 25°C
T = 25°C
J
J
I
D
= 50 A
f = 1 MHz
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
100
10
1000
100
V
GS
= 0 V
t
d(off)
t
f
t
r
t
d(on)
1
10
1
V
V
= 10 V
= 20 V
= 50 A
GS
T = 125°C
J
DS
I
D
T = 25°C
J
T = −55°C
J
0.1
0
10
20
30
40
50
60
0.2
0.4
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.6
0.8
1.0
1.2
R , GATE RESISTANCE (W)
G
V
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
1000
100
10
T
= 25°C
J(initial)
10 ms
T
= 25°C
C
T
= 100°C
Single Pulse
≤ 10 V
J(initial)
0.5 ms
1 ms
10 ms
V
GS
1
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
0.1
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T , TIME IN AVALANCHE (S)
AV
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NTMYS1D3N04C
TYPICAL CHARACTERISTICS
100
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (s)
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NTMYS1D3N04CTWG
1D3N04C
LFPAK
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
LFPAK4 5x6
CASE 760AB
ISSUE C
DATE 19 NOV 2019
GENERIC
MARKING DIAGRAM*
XXXXXX = Specific Device Code
A
WL
Y
= Assembly Location
= Wafer Lot
= Year
XXXXXX
XXXXXX
AWLYW
W
= Work Week
*This information is generic. Please refer
to device data sheet for actual part
marking. Some products may not follow
the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON82777G
LFPAK4 5x6
PAGE 1 OF 1
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