NTP095N65S3HF [ONSEMI]
功率 MOSFET，N 沟道，SUPERFET® III，FRFET®，650 V，36 A，95 mΩ，TO-220;
| 型号： | NTP095N65S3HF |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，SUPERFET® III，FRFET®，650 V，36 A，95 mΩ，TO-220 |
| 文件： | 总10页 (文件大小：597K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTP095N65S3HF
MOSFET – Power,
N‐Channel, SUPERFET III,
FRFET
www.onsemi.com
650 V, 36 A, 95 mW
Description
V
R
MAX
I MAX
D
DSS
DS(ON)
SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on-resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate.
650 V
95 mW @ 10 V
36 A
D
Consequently, SUPERFET III MOSFET is very suitable for the
various power system for miniaturization and higher efficiency.
SUPERFET III FRFET MOSFET’s optimized reverse recovery
performance of body diode can remove additional component and
improve system reliability.
G
S
Features
• 700 V @ T = 150°C
J
• Typ. R
= 82 mW
DS(on)
• Ultra Low Gate Charge (Typ. Q = 66 nC)
g
• Low Effective Output Capacitance (Typ. C
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
= 569 pF)
oss(eff.)
G
D
S
TO−220
CASE 340AT
Applications
• Telecom / Server Power Supplies
• Industrial Power Supplies
• EV Charger
MARKING DIAGRAM
• UPS / Solar
$Y&Z&3&K
NTP095
N65S3HF
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
NTP095N65S3HF = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
June, 2019 − Rev. 0
NTP095N65S3HF/D
NTP095N65S3HF
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)
C
Symbol
Parameter
Value
650
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
− DC
30
V
− AC (f > 1 Hz)
30
I
D
Drain Current
− Continuous (T = 25°C)
36
A
C
− Continuous (T = 100°C)
22.8
90
C
I
Drain Current
− Pulsed (Note 1)
A
mJ
A
DM
E
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 2)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
440
AS
AS
I
4.6
E
2.72
100
mJ
V/ns
AR
dv/dt
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
50
P
(T = 25°C)
272
W
W/°C
°C
D
C
− Derate Above 25°C
2.176
−55 to +150
300
T , T
Operating and Storage Temperature Range
J
STG
T
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I = 4.6 A, R = 25 W, starting T = 25°C.
AS
G
J
3. I ≤ 18 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
0.46
Unit
R
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
_C/W
q
JC
JA
R
62.5
q
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
Quantity
50 Units
NTP095N65S3HF
NTP095N65S3HF
TO−220
Tube
N/A
N/A
www.onsemi.com
2
NTP095N65S3HF
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
650
700
V
V
V
= 0 V, I = 1 mA, T = 25_C
DSS
GS
D
J
V
GS
= 0 V, I = 1 mA, T = 150_C
D
J
DBV
/DT
Breakdown Voltage Temperature
Coefficient
I
D
= 15 mA, Referenced to 25_C
0.63
97
V/_C
DSS
J
I
Zero Gate Voltage Drain Current
V
DS
= 650 V, V = 0 V
10
mA
DSS
GS
V
= 520 V, T = 125_C
DS
C
I
Gate to Body Leakage Current
V
=
30 V, V = 0 V
100
nA
GSS
GS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
= V , I = 0.86 mA
3.0
5.0
95
V
mW
S
GS(th)
DS(on)
GS
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
V
V
= 10 V, I = 18 A
82
22
GS
DS
D
g
FS
= 20 V, I = 18 A
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
2930
61
pF
pF
pF
pF
nC
nC
nC
W
iss
V
= 400 V, V = 0 V, f = 1 MHz
GS
DS
C
Output Capacitance
oss
C
Effective Output Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
V
V
= 0 V to 400 V, V = 0 V
569
110
66
oss(eff.)
DS
GS
C
= 0 V to 400 V, V = 0 V
GS
oss(er.)
DS
Q
g(tot)
V
DS
= 400 V, I = 18 A, V = 10 V
D
GS
Q
21
gs
(Note 4)
Q
25
gd
ESR
f = 1 MHz
2.4
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
28
28
72
24
ns
ns
ns
ns
d(on)
V
= 400 V, I = 18 A,
D
t
r
DD
GS
V
= 10 V, R = 4.7 W
g
t
d(off)
(Note 4)
t
f
SOURCE-DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Source to Drain Diode Forward Current
Maximum Pulsed Source to Drain Diode Forward Current
Source to Drain Diode Forward
36
90
A
A
V
S
I
SM
V
SD
1.3
V
GS
= 0 V, I = 18 A
SD
Voltage
t
Reverse Recovery Time
Reverse Recovery Charge
106
414
ns
rr
V
DD
= 400 V, I = 18 A,
SD
F
dI /dt = 100 A/ms
Q
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
www.onsemi.com
3
NTP095N65S3HF
TYPICAL CHARACTERISTICS
200
100
100
VGS = 10.0 V
VDS = 20 V
250 ms Pulse Test
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
150oC
10
1
10
25oC
o
−55 C
250ms Pulse Test
C = 25oC
T
0.1
1
2
3
4
5
6
7
GS, Gate-Source Voltage[V]
8
9
0.1
1
10
20
VDS, Drain−Source Voltage[V]
V
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
1000
100
10
0.20
0.15
0.10
0.05
0.00
VGS = 0 V
TC = 25oC
250 ms Pulse Test
150oC
VGS = 10 V
1
25oC
VGS = 20 V
0.1
o
−55 C
0.01
0.001
0
20
40
60
80
100
0.0
0.5
1.0
1.5
2.0
VS,DBody Diode Forward Voltage [V]
ID, Drain Current [A]
Figure 3. On−Resistance Variation vs. Drain
Figure 4. Body Diode Forward Voltage
Current and Gate Voltage
Variation vs. Source Current and Temperature
10
100000
I
D = 18 A
10000
1000
100
10
Ciss
8
6
4
2
0
VDS = 130 V
VDS = 400 V
Coss
VGS = 0 V
f = 1 MHz
C
C
C
= C + C (C = shorted)
gs gd ds
Crss
iss
1
= C + C
oss
rss
ds gd
= C
gd
0.1
0
10
20
30
40
50
60
70
0.1
1
10
100
1000
Qg, Total Gate Charge [nC]
V
DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
www.onsemi.com
4
NTP095N65S3HF
TYPICAL CHARACTERISTICS
2.5
1.2
1.1
1.0
0.9
0.8
VGS = 10 V
ID = 18 A
VGS = 0 V
ID = 15 mA
2.0
1.5
1.0
0.5
0.0
−50
0
50
100
150
−50
0
50
100
150
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation vs.
Temperature
Figure 8. On−Resistance Variation vs.
Temperature
40
30
20
10
0
200
100
10
1
30ms
100ms
1ms
10ms
DC
Operation in This Area
is Limited by RDS(on)
TC = 25oC
TJ = 150oC
Single Pulse
0.1
25
50
75
100
125
150
1
10
100
1000
o
VDS, Drain−Source Voltage [V]
TC, Case Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case
Temperature
20
15
10
5
0
0
130
260
390
520
650
V
DS, Drain to Source Voltage [V]
Figure 11. Eoss vs. Drain−to−Source Voltage
www.onsemi.com
5
NTP095N65S3HF
TYPICAL CHARACTERISTICS
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
P
DM
0.05
0.02
0.01
0.1
0.01
t
1
t
2
Z
R
(t) = r(t) x R
o
qJC
qJC
SINGLE PULSE
= 0.46 C/W
qJC
Peak T = P
x Z (t) + T
J
DM
qJC C
Duty Cycle, D = t / t
1
2
0.001
10−5
10−4
10−3
10−2
10−1
100
101
102
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Transient Thermal Response Curve
www.onsemi.com
6
NTP095N65S3HF
V
GS
R
Q
g
L
V
DS
Q
Q
gd
gs
V
GS
DUT
I
G
= Const.
Figure 13. Gate Charge Test Circuit & Waveform
R
L
V
V
DS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
GS
DUT
V
GS
t
r
t
f
t
t
d(off)
d(on)
t
on
t
off
Figure 14. Resistive Switching Test Circuit & Waveforms
L
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
www.onsemi.com
7
NTP095N65S3HF
+
DUT
V
SD
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC. FRFET is a registered trademark of Semiconductor Com-
ponents Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
www.onsemi.com
8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220−3LD
CASE 340AT
ISSUE A
DATE 03 OCT 2017
Scale 1:1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13818G
TO−220−3LD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
NTP106M4TRA(500)
CAPACITOR, TANTALUM, SOLID POLYMER, POLARIZED, 4V, 10uF, SURFACE MOUNT, 1206, CHIP
NICHICON
NTP106M4TRA(500)F
Tantalum Capacitor, Polarized, Tantalum (solid Polymer), 4V, 20% +Tol, 20% -Tol, 10uF, Surface Mount, 1206, CHIP, ROHS COMPLIANT
NICHICON
NTP106M6.3TRA(500)
CAPACITOR, TANTALUM, SOLID POLYMER, POLARIZED, 6.3V, 10uF, SURFACE MOUNT, 1206, CHIP
NICHICON
NTP106M6.3TRA(500)F
Tantalum Capacitor, Polarized, Tantalum (solid Polymer), 6.3V, 20% +Tol, 20% -Tol, 10uF, Surface Mount, 1206, CHIP, ROHS COMPLIANT
NICHICON
NTP106M6.3TRA2(200)F
Tantalum Capacitor, Polarized, Tantalum (solid Polymer), 6.3V, 20% +Tol, 20% -Tol, 10uF, Surface Mount, 1206, CHIP, ROHS COMPLIANT
NICHICON
NTP106M6.3TRP2(200)F
Tantalum Capacitor, Polarized, Tantalum (solid Polymer), 6.3V, 20% +Tol, 20% -Tol, 10uF, Surface Mount, 0805, CHIP, ROHS COMPLIANT
NICHICON
NTP107M10TRD(ER55)
CAPACITOR, TANTALUM, SOLID POLYMER, POLARIZED, 10V, 100uF, SURFACE MOUNT, 2917, CHIP
NICHICON
NTP107M10TRD(ER55)F
Tantalum Capacitor, Polarized, Tantalum (solid Polymer), 10V, 20% +Tol, 20% -Tol, 100uF, Surface Mount, 2917, CHIP
NICHICON
NTP107M4TRA(100)F
Tantalum Capacitor, Polarized, Tantalum (solid Polymer), 4V, 20% +Tol, 20% -Tol, 100uF, Surface Mount, 1206, CHIP, ROHS COMPLIANT
NICHICON
NTP107M4TRA(35)3KF
Tantalum Capacitor, Polarized, Tantalum (solid Polymer), 4V, 20% +Tol, 20% -Tol, 100uF, 1206
NICHICON
NTP107M4TRB2(80)F
Tantalum Capacitor, Polarized, Tantalum (solid Polymer), 4V, 20% +Tol, 20% -Tol, 100uF, Surface Mount, 1411, CHIP, ROHS COMPLIANT
NICHICON
NTP107M6.3TRA(35)3KF
Tantalum Capacitor, Polarized, Tantalum (solid Polymer), 6.3V, 20% +Tol, 20% -Tol, 100uF, 1206
NICHICON
©2020 ICPDF网 联系我们和版权申明