NTP150N65S3HF [ONSEMI]
功率 MOSFET，N 沟道，SUPERFET® III，FRFET®，650 V，24 A，150 mΩ，TO-220;
| 型号： | NTP150N65S3HF |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，SUPERFET® III，FRFET®，650 V，24 A，150 mΩ，TO-220 |
| 文件： | 总10页 (文件大小：375K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTP150N65S3HF
MOSFET – Power,
N-Channel, SUPERFETIII,
FRFET
650 V, 24 A, 150 mW
www.onsemi.com
Description
SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate.
V
R
MAX
I MAX
D
DSS
DS(ON)
650 V
150 mW @ 10 V
24 A
D
Consequently, SUPERFET III MOSFET is very suitable for the
various power system for miniaturization and higher efficiency.
SUPERFET III FRFET MOSFET’s optimized reverse recovery
performance of body diode can remove additional component and
improve system reliability.
G
Features
S
• 700 V @ T = 150°C
J
POWER MOSFET
• Typ. R
= 121 mW
DS(on)
• Ultra Low Gate Charge (Typ. Q = 43 nC)
g
• Low Effective Output Capacitance (Typ. C
• 100% Avalanche Tested
= 400 pF)
oss(eff.)
• These Devices are Pb−Free and are RoHS Compliant
G
D
S
Applications
TO−220
CASE 340AT
• Telecom / Server Power Supplies
• Industrial Power Supplies
• EV Charger
MARKING DIAGRAM
• UPS / Solar
$Y&Z&3&K
NTP150
N65S3HF
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
NTP150N65S3HF = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
June, 2019 − Rev. 0
NTP150N65S3HF/D
NTP150N65S3HF
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)
C
Symbol
Parameter
Value
650
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
− DC
30
V
− AC (f > 1 Hz)
30
I
D
Drain Current
− Continuous (T = 25°C)
24
A
C
− Continuous (T = 100°C)
15.2
60
C
I
Drain Current
− Pulsed (Note 1)
A
mJ
A
DM
E
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 2)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
275
AS
AS
I
3.8
E
1.92
100
mJ
V/ns
AR
dv/dt
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
50
P
(T = 25°C)
192
W
W/°C
°C
D
C
− Derate Above 25°C
1.54
−55 to +150
300
T , T
Operating and Storage Temperature Range
J
STG
T
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I = 3.8 A, R = 25 W, starting T = 25°C.
AS
G
J
3. I ≤ 12 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
0.65
Unit
R
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
_C/W
q
JC
JA
R
62.5
q
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
N/A
Quantity
NTP150N65S3HF
NTP150N65S3HF
TO−220
Tube
N/A
50 Units
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2
NTP150N65S3HF
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
650
700
V
V
V
V
I
= 0 V, I = 1 mA, T = 25_C
DSS
GS
D
J
= 0 V, I = 1 mA, T = 150_C
GS
D
J
DBV
/ DT
Breakdown Voltage Temperature
Coefficient
= 15 mA, Referenced to 25_C
0.62
67
V/_C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
= 650 V, V = 0 V
10
mA
DSS
GS
= 520 V, T = 125_C
C
I
Gate to Body Leakage Current
=
30 V, V = 0 V
100
nA
GSS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
GS
V
GS
V
DS
= V , I = 0.54 mA
3.0
5.0
V
mW
S
GS(th)
DS(on)
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
= 10 V, I = 12 A
121
14
150
D
g
FS
= 20 V, I = 12 A
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 400 V, V = 0 V, f = 1 MHz
1985
40
pF
pF
pF
pF
nC
nC
nC
W
iss
DS
GS
C
Output Capacitance
oss
C
Effective Output Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
V
DS
V
DS
V
DS
= 0 V to 400 V, V = 0 V
400
71
oss(eff.)
GS
C
= 0 V to 400 V, V = 0 V
GS
oss(er.)
Q
= 400 V, I = 12 A, V = 10 V
43
g(tot)
D
GS
(Note 4)
Q
13
gs
Q
17
gd
ESR
f = 1 MHz
5.0
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
= 400 V, I = 12 A, V = 10 V
21
19
63
14
ns
ns
ns
ns
d(on)
DD
g
D
GS
R = 4.7 W
t
r
(Note 4)
t
d(off)
t
f
SOURCE-DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Source to Drain Diode Forward Current
Maximum Pulsed Source to Drain Diode Forward Current
24
60
A
A
S
I
SM
V
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
V
= 400 V, I = 12 A
1.3
V
SD
DD
SD
t
= 400 V, I = 12 A,
88
ns
nC
rr
DD
F
SD
dI /dt = 100 A/ms
Q
Reverse Recovery Charge
306
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
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3
NTP150N65S3HF
TYPICAL CHARACTERISTICS
80
10
60
V
GS
= 10 V
250 ms Pulse Test
V
= 20 V
DS
8.0 V
T
C
= 25°C
250 ms Pulse Test
7.0 V
6.5 V
6.0 V
10
5.5 V
1
T = 25°C
J
T = 150°C
J
T = −55°C
J
0.1
1
0.2
1
10
20
70
1K
3
0
0
4
5
6
7
8
9
V
, DRAIN−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
DS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.30
0.25
0.20
100
10
1
V
= 0 V
250 ms Pulse Test
GS
T
= 25°C
C
T = 150°C
J
V
= 10 V
T = 25°C
J
GS
0.1
V
= 20 V
GS
0.15
0.10
0.01
T = −55°C
J
0.001
0
14
28
42
56
0.5
, BODY DIODE FORWARD VOLTAGE (V)
SD
1.0
1.5
2.0
I , DRAIN CURRENT (A)
V
D
Figure 3. On−Resistance Variation vs. Drain
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
Current and Gate Voltage
100K
10K
1K
10
8
V
= 130 V
DS
I
D
= 12 A
V
= 400 V
DS
C
iss
6
100
10
C
oss
V
= 0 V
GS
4
C
f = 1 MHz
rss
C
C
C
= C + C (C = shorted)
gs gd ds
iss
2
0
1
= C + C
oss
rss
ds
gd
= C
gd
0.1
0.1
1
10
100
10
20
30
40
50
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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4
NTP150N65S3HF
TYPICAL CHARACTERISTICS
1.2
1.1
1.0
3.0
V
I
= 0 V
= 15 mA
I
V
= 12 A
GS
D
= 10 V
D
2.5
2.0
1.5
1.0
GS
0.9
0.8
0.5
0
−50
0
50
100
150
−50
0
50
100
150
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Breakdown Voltage Variation vs.
Temperature
Figure 8. On−Resistance Variation vs.
Temperature
100
24
18
12
30 ms
100 ms
10
1 ms
Operation in this Area
is Limited by R
DS(on)
10 ms
DC
1
6
0
T
C
= 25°C
T = 150°C
Single Pulse
J
0.1
1
10
100
1000
25
50
75
100
125
150
V
DS
, DRAIN−SOURCE VOLTAGE (V)
T , CASE TEMPERATURE (°C)
C
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case
Temperature
12
9
6
3
0
0
130
260
390
520
650
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. EOSS vs. Drain−to−Source Voltage
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5
NTP150N65S3HF
TYPICAL CHARACTERISTICS
2
1
Duty Cycle = 0.5
0.2
0.1
0.05
P
DM
0.1
0.02
t
1
t
2
0.01
0.01
Z
q
(t) = r(t) x R
q
JC
JC
R
= 0.65°C/W
q
JC
Single Pulse
Peak T = P
x Z (t) + T
q
JC
J
DM
C
Duty Cycle, D = t / t
1
2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Transient Thermal Response Curve
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6
NTP150N65S3HF
V
GS
R
Q
g
L
V
DS
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
t
d(off)
t
r
t
f
d(on)
t
on
t
off
Figure 14. Resistive Switching Test Circuit & Waveforms
L
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
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7
NTP150N65S3HF
+
DUT
V
DS
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET and FRFET are a registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United
States and/or other countries.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220−3LD
CASE 340AT
ISSUE A
DATE 03 OCT 2017
Scale 1:1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13818G
TO−220−3LD
PAGE 1 OF 1
ON Semiconductor and
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