NTP185N60S5H [ONSEMI]
Power MOSFET, N-Channel, SUPERFET® V, FAST, 600 V, 15 A, 185 mΩ, TO-220;
| 型号： | NTP185N60S5H |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, N-Channel, SUPERFET® V, FAST, 600 V, 15 A, 185 mΩ, TO-220 |
| 文件： | 总9页 (文件大小：214K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
N-Channel, SUPERFET) V,
FAST, TO220
V
R
MAX
I MAX
D
DSS
DS(ON)
600 V
185 mW @ 10 V
15 A
D
600 V, 185 mW, 15 A
NTP185N60S5H
Description
The SUPERFET V MOSFET FAST series helps maximize system
G
efficiency by the extremely low switching losses in hard switching
application.
Features
S
• 650 V @ T = 150°C
J
• Typ. R
= 148 mW
• 100% Avalanche Tested
DS(on)
• Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Applications
G
• Telecom / Server Power Supplies
• EV Charger / UPS / Solar / Industrial Power Supplies
D
S
TO−220−3LD
CASE 340AT
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
600
30
Unit
V
MARKING DIAGRAM
V
DSS
V
GSS
Gate−to−Source Voltage
DC
V
AC (f > 1 Hz)
30
T185N
60S5H
AYWWZZ
Continuous Drain Current
T
= 25°C
= 100°C
= 25°C
= 25°C
= 25°C
I
15
A
C
D
T
C
9
Power Dissipation
T
C
T
C
T
C
P
116
53
W
A
D
Pulsed Drain Current (Note 1)
I
DM
Pulsed Source Current
(Body Diode) (Note 1)
I
53
A
SM
Operating Junction and Storage Temperature T , T
−55 to
+150
°C
J
STG
Range
T185N60S5H = Specific Device Code
= Assembly Plant Code
YWW = Date Code (Year & Week)
Source Current (Body Diode)
I
15
A
S
A
Single Pulse Avalanche
Energy
I = 3.6 A,
G
E
AS
124
mJ
L
R
= 25 W
ZZ
= Lot
Avalanche Current
I
3.6
1.16
120
20
A
AS
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
E
mJ
AR
ORDERING INFORMATION
dv/dt
V/ns
Device
Package
Shipping
Peak Diode Recovery dv/dt (Note 2)
NTP185N60S5H
TO220
50 Units / Tube
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 seconds)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I ≤ 7.5 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.
SD
DD
J
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
August, 2021 − Rev. 1
NTP185N60S5H/D
NTP185N60S5H
THERMAL CHARACTERISTICS
Parameter
Symbol
Value
1.08
Unit
Thermal Resistance, Junction−to−Case, Max.
Thermal Resistance, Junction−to−Ambient, Max.
R
°C/W
q
JC
R
62.5
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
I
= 0 V, I = 1 mA, T = 25_C
V
600
−
−
−
V
GS
D
J
(BR)DSS
Drain−to−Source Breakdown Voltage
Temperature Coefficient
= 10 mA, Referenced to 25_C
DV
/
−
630
mV/_C
D
(BR)DSS
DT
J
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
V
GS
= 0 V, V = 600 V, T = 25_C
I
−
−
−
−
1
mA
DS
J
DSS
GSS
V
=
30 V, V = 0 V
I
100
nA
GS
DS
Drain−to−Source On Resistance
Gate Threshold Voltage
V
= 10 V, I = 7.5 A, T = 25_C
R
DS(on)
−
2.7
−
148
−
185
4.3
−
mW
V
GS
D
J
V
GS
= V , I = 1.4 mA, T = 25_C
V
GS(th)
DS
D
J
Forward Trans−conductance
V
DS
= 20 V, I = 7.5 A
g
FS
18
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
V
= 400 V, V = 0 V, f = 250 kHz
C
−
−
−
1350
25
−
−
−
pF
DS
GS
ISS
Output Capacitance
C
OSS
Time Related Output Capacitance
I
= Constant, V = 0 V to 400 V,
C
372
D
DS
= 0 V
OSS(tr.)
V
GS
Energy Related Output Capacitance
Total Gate Charge
V
= 0 V to 400 V, V = 0 V
C
−
−
−
−
−
42
25
7
−
−
−
−
−
DS
GS
OSS(er.)
V
= 400 V, I = 7.5 A, V = 10 V
Q
G(tot)
nC
DD
D
GS
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Q
GS
GD
Q
8
f = 1 MHz
R
0.9
W
G
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
V
GS
I
= 0/10 V, V = 400 V,
t
d(on)
−
−
−
−
18
9
−
−
−
−
ns
DD
= 7.5 A, R = 10 W
D
G
t
r
Turn-Off Delay Time
Fall Time
t
53
4
d(off)
t
f
SOURCE-TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I = 7.5 A, T = 25_C
V
−
−
−
−
1.2
−
V
SD
J
SD
V
= 0 V, I = 7.5 A,
t
251
3028
ns
nC
GS
SD
RR
dI/dt = 100 A/ms, V = 400 V
DD
Q
−
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NTP185N60S5H
TYPICAL CHARACTERISTICS
30
25
20
100
7.0 V
6.0 V
V
GS
= 10 V
V
DS
= 20 V
T
C
= 25°C
15
10
5
10
5.0 V
T
= 25°C
C
4.5 V
4.0 V
T
= 150°C
T
C
= −55°C
C
0
1
0
5
10
15
20
2
0
0
3
4
5
6
1.2
30
V
, DRAIN−TO−SOURCE VOLTAGE (V)
V
, GATE−TO−SOURCE VOLTAGE (V)
DS
GS
Figure 1. On−Region Characteristics
= 25°C
Figure 2. Transfer Characteristics
0.4
0.3
0.2
100
10
T
C
V
= 0 V
GS
T
= 25°C
C
V
V
= 10 V
= 20 V
GS
GS
1
0.1
0
T
C
= 150°C
T
= −55°C
C
0.1
0
5
10
15
20
25
30
0.2
0.4
0.6
0.8
1.0
I , DRAIN CURRENT (A)
D
V
, DIODE FORWARD VOLTAGE (V)
SD
Figure 3. On−Resistance Variation vs. Drain
Figure 4. Diode Forward Voltage vs. Source
Current
Current and Gate Voltage
6
5
4
3
2
1
0
10
10
10
10
10
10
10
10
V
= 0 V
f = 250 kHz
C
C
C
= C + C (C = shorted)
GS GD DS
GS
ISS
I
D
= 7.5 A
= C + C
OSS
RSS
DS
GD
V
DS
= 130 V
= C
GD
8
6
4
V
= 400 V
DS
C
ISS
C
C
OSS
RSS
2
0
−1
10
0
100
200
300
400
500
600
5
10
15
20
25
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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3
NTP185N60S5H
TYPICAL CHARACTERISTICS
1.2
1.1
1.0
3.0
V
= 0 V
= 10 mA
GS
V
I
= 10 V
= 7.5 A
GS
I
D
2.5
2.0
1.5
1.0
D
0.9
0.8
0.5
0
−75 −50 −25
0
25 50 75 100 125 150 175
−75 −50 −25
0
25 50
75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Breakdown Voltage Variation vs.
Temperature
Figure 8. On−Resistance Variation vs.
Temperature
16
12
100
10
10 ms
100 ms
8
Operation in this Area is
1 ms
1
Limited by R
DS(on)
4
0
10 ms
T
= 25°C
C
T = 150°C
J
DC
Single Pulse
0.1
1
10
100
1000
25
50
75
100
125
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T , CASE TEMPERATURE (°C)
C
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case
Temperature
6
5
4
3
2
1
0
0
100
200
300
400
500
600
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. EOSS vs. Drain−to−Source Voltage
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4
NTP185N60S5H
TYPICAL CHARACTERISTICS
1
D = 0.5
D = 0.2
D = 0.1
D = 0.05
0.1
Notes:
(t) = 1.08°C/W Max
D = 0.02
D = 0.01
Z
q
JC
Duty Cycle, D = t /t
1
2
T
JM
= P
x Z (t) + T
qJC
DM C
Single Pulse
0.00001
0.01
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION (s)
Figure 12. Transient Thermal Impedance
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5
NTP185N60S5H
V
GS
R
Q
g
L
V
DD
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
r
t
f
t
t
d(off)
d(on)
t
on
t
off
Figure 14. Resistive Switching Test Circuit & Waveforms
L
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
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6
NTP185N60S5H
+
DUT
V
SD
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC or its subsidiaries in the United States and/or other countries.
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7
NTP185N60S5H
PACKAGE DIMENSIONS
TO−220−3LD
CASE 340AT
ISSUE A
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8
NTP185N60S5H
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