NTP30N06L [ONSEMI]
Power MOSFET 30 Amps, 60 Volts, Logic Level; 功率MOSFET 30安培， 60伏特，逻辑电平
| 型号： | NTP30N06L |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET 30 Amps, 60 Volts, Logic Level |
| 文件： | 总8页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTP30N06L, NTB30N06L
Power MOSFET
30 Amps, 60 Volts, Logic Level
2
N–Channel TO–220 and D PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
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Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
30 AMPERES
60 VOLTS
R
= 46 mΩ
DS(on)
N–Channel
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol Value
Unit
Drain–to–Source Voltage
Drain–to–Gate Voltage (R
V
V
60
60
Vdc
Vdc
Vdc
DSS
= 10 MΩ)
G
GS
DGR
Gate–to–Source Voltage
– Continuous
4
V
V
"15
"20
GS
GS
S
– Non–Repetitive (t v10 ms)
p
4
Drain Current
1
2
– Continuous @ T = 25°C
I
I
30
15
90
Adc
Apk
A
D
D
– Continuous @ T = 100°C
3
A
– Single Pulse (t v10 µs)
I
p
DM
P
2
D PAK
TO–220AB
CASE 221A
STYLE 5
Total Power Dissipation @ T = 25°C
88.2
0.59
W
W/°C
A
D
CASE 418B
STYLE 2
Derate above 25°C
1
Operating and Storage Temperature Range
T , T
stg
–55 to
+175
°C
2
J
3
MARKING DIAGRAMS
& PIN ASSIGNMENTS
Single Pulse Drain–to–Source Avalanche
E
AS
101
mJ
Energy – Starting T = 25°C
J
4
(V
I
= 50 Vdc, V
= 26 A, V
DS
= 5.0 Vdc, L = 0.3 mH
DD
L(pk)
GS
= 60 Vdc)
4
Drain
Drain
Thermal Resistance
– Junction–to–Case
°C/W
°C
R
1.7
θJC
NTx30N06L
LLYWW
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
T
260
L
NTx30N06L
LLYWW
2
1
Gate
3
1
Gate
3
Drain
Source
Source
NTx30N06L = Device Code
2
x
= P or B
Drain
LL
Y
= Location Code
= Year
WW
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTP30N06L
NTB30N06L
NTB30N06LT4
TO–220AB
50 Units/Rail
50 Units/Rail
2
D PAK
2
D PAK
800/Tape & Reel
Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
March, 2002 – Rev. 1
NTP30N06L/D
NTP30N06L, NTB30N06L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage (Note 1.)
(V = 0 Vdc, I = 250 µAdc)
V
Vdc
(BR)DSS
60
–
71.8
69
–
–
GS
D
Temperature Coefficient (Positive)
mV/°C
µAdc
Zero Gate Voltage Drain Current
I
DSS
(V
DS
(V
DS
= 60 Vdc, V
= 60 Vdc, V
= 0 Vdc)
= 0 Vdc, T = 150°C)
–
–
–
–
1.0
10
GS
GS
J
Gate–Body Leakage Current (V
= ±15 Vdc, V
DS
= 0 Vdc)
I
–
–
±100
nAdc
Vdc
GS
GSS
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage (Note 1.)
V
GS(th)
(V
= V , I = 250 µAdc)
1.0
–
1.7
4.8
2.0
–
DS
GS
D
Threshold Temperature Coefficient (Negative)
mV/°C
mΩ
Static Drain–to–Source On–Resistance (Note 1.)
R
V
DS(on)
(V = 5.0 Vdc, I = 15 Adc)
–
38
46
GS
D
Static Drain–to–Source On–Voltage (Note 1.)
Vdc
DS(on)
(V
GS
(V
GS
= 5.0 Vdc, I = 30 Adc)
–
–
1.3
1.06
1.7
–
D
= 5.0 Vdc, I = 15 Adc, T = 150°C)
D
J
Forward Transconductance (Note 1.) (V
= 7.0 Vdc, I = 15 Adc)
g
FS
–
21
–
mhos
pF
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
–
–
–
810
260
80
1150
370
115
iss
(V
DS
= 25 Vdc, V
= 0 Vdc,
GS
f = 1.0 MHz)
Output Capacitance
Transfer Capacitance
C
oss
C
rss
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
t
–
–
–
–
–
–
–
10
200
15.6
62
20
400
30
120
32
–
ns
d(on)
Rise Time
t
r
(V
DD
GS
= 30 Vdc, I = 30 Adc,
D
V
= 5.0 Vdc, R = 9.1 Ω) (Note 1.)
G
Turn–Off Delay Time
Fall Time
t
d(off)
t
f
Gate Charge
Q
T
Q
1
Q
2
16
nC
(V
DS
= 48 Vdc, I = 30 Adc,
D
= 5.0 Vdc) (Note 1.)
3.9
10
V
GS
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(I = 30 Adc, V
= 0 Vdc) (Note 1.)
V
SD
–
–
1.01
1.03
1.2
–
Vdc
ns
S
GS
(I = 30 Adc, V
S
= 0 Vdc, T = 150°C)
GS
J
Reverse Recovery Time
t
rr
–
–
–
–
50
32
–
–
–
–
(I = 30 Adc, V
= 0 Vdc,
GS
S
t
a
dI /dt = 100 A/µs) (Note 1.)
S
t
b
17
Reverse Recovery Stored Charge
Q
0.082
µC
RR
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperatures.
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2
NTP30N06L, NTB30N06L
60
60
V
DS
≥ 10 V
V
GS
= 10 V
5.5 V
5 V
50
40
30
20
10
0
50
40
30
20
8 V
6 V
4.5 V
4 V
3.5 V
3 V
T = 25°C
J
10
0
T = 100°C
J
T = –55°C
J
0
1
2
3
4
5
6
1.5
2.5
3.5
4.5
5.5
6.5
V , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
DS
V , GATE–TO–SOURCE VOLTAGE (VOLTS)
GS
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
0.1
0.1
0.08
0.06
0.04
V
GS
= 5 V
V
GS
= 10 V
0.08
0.06
0.04
0.02
0
T = 100°C
J
T = 100°C
J
T = 25°C
J
T = 25°C
J
T = –55°C
J
T = –55°C
J
0.02
0
0
10
20
30
40
50
60
0
10
20
30
40
50
60
I , DRAIN CURRENT (AMPS)
D
I , DRAIN CURRENT (AMPS)
D
Figure 3. On–Resistance versus
Gate–to–Source Voltage
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
10000
1000
2
1.8
1.6
1.4
1.2
V
GS
= 0 V
I
V
= 15 A
D
= 5 V
GS
T = 150°C
J
100
10
1
0.8
0.6
T = 100°C
J
–50 –25
0
25
50
75
100 125 150 175
0
10
20
30
40
50
60
T , JUNCTION TEMPERATURE (°C)
J
V , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
DS
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–to–Source Leakage Current
versus Voltage
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3
NTP30N06L, NTB30N06L
6
2800
2400
2000
V
= 0 V
V
GS
= 0 V
T = 25°C
J
DS
Q
T
5
Q
Q
2
1
C
iss
4
3
2
1
0
1600
1200
800
400
0
V
GS
C
rss
C
iss
C
oss
I
= 30 A
D
J
C
rss
T = 25°C
V
GS
V
DS
10
5
0
5
10
15
20
25
0
4
8
12
16
20
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE
(VOLTS)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate–to–Source and
Drain–to–Source Voltage versus Total Charge
1000
32
24
16
8
V
= 0 V
GS
T = 25°C
J
t
r
100
10
1
t
f
t
d(off)
V
= 30 V
= 30 A
= 5 V
DS
t
d(on)
I
V
D
GS
0
0.6
1
10
, GATE RESISTANCE (Ω)
100
0.68
0.76
0.84
0.92
1
1.08
R
V
SD
, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
G
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
1000
100
120
100
V
= 15 V
I
D
= 26 A
GS
SINGLE PULSE
= 25°C
T
C
80
60
10 ms
1 ms
10
1
100 µs
40
20
0
10 µs
dc
R
Limit
Thermal Limit
DS(on)
Package Limit
0.1
0.1
1
10
100
25
50
75
100
125
150
175
V , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
DS
T , STARTING JUNCTION TEMPERATURE (°C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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4
NTP30N06L, NTB30N06L
1
D = 0.5
0.2
0.1
P
(pk)
R
(t) = r(t) R
θJC
θJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
0.05
t
1
READ TIME AT t
1
0.01
t
2
T
J(pk)
– T = P
R
(t)
C
(pk) θJC
DUTY CYCLE, D = t /t
SINGLE PULSE
1 2
0.1
0.0001
0.001
0.01
0.1
1
10
t, TIME (s)
Figure 13. Thermal Response
di/dt
I
S
t
rr
t
a
t
b
TIME
0.25 I
t
p
S
I
S
Figure 14. Diode Reverse Recovery Waveform
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5
NTP30N06L, NTB30N06L
PACKAGE DIMENSIONS
TO–220 THREE–LEAD
TO–220AB
CASE 221A–09
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
–T–
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
B
F
T
S
4
1
INCHES
DIM MIN MAX
MILLIMETERS
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
---
A
K
Q
Z
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
---
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
---
2
3
U
H
G
H
J
K
L
L
R
N
Q
R
S
T
V
J
G
D
U
V
Z
N
0.080
2.04
STYLE 5:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
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6
NTP30N06L, NTB30N06L
PACKAGE DIMENSIONS
2
D PAK
CASE 418B–03
ISSUE D
C
E
V
–B–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
4
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
MILLIMETERS
A
MIN
8.64
9.65
4.06
0.51
1.14
MAX
9.65
10.29
4.83
0.89
1.40
A
B
C
D
E
G
H
J
0.340
0.380
0.160
0.020
0.045
0.380
0.405
0.190
0.035
0.055
S
1
2
3
–T–
SEATING
PLANE
K
0.100 BSC
2.54 BSC
0.080
0.018
0.090
0.575
0.045
0.110
0.025
0.110
0.625
0.055
2.03
0.46
2.79
0.64
J
G
K
S
V
2.29
14.60
1.14
2.79
15.88
1.40
H
D 3 PL
M
M
T B
0.13 (0.005)
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
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7
NTP30N06L, NTB30N06L
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
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NTP30N06L/D
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