NTP45N06LG [ONSEMI]
Power MOSFET 45 Amps, 60 Volts, Logic Level, N-Channel TO-220;
| 型号： | NTP45N06LG |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET 45 Amps, 60 Volts, Logic Level, N-Channel TO-220 |
| 文件： | 总9页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
NTP45N06L, NTB45N06L
Power MOSFET
45 Amps, 60 Volts
Logic Level, N−Channel TO−220 and
D2PAK
http://onsemi.com
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
45 AMPERES, 60 VOLTS
RDS(on) = 28 mW
Features
N−Channel
• Higher Current Rating
D
• Lower R
DS(on)
• Lower V
DS(on)
• Lower Capacitances
G
• Lower Total Gate Charge
• Tighter V Specification
SD
S
• Lower Diode Reverse Recovery Time
• Lower Reverse Recovery Stored Charge
• Pb−Free Packages are Available
4
4
Typical Applications
1
2
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
3
2
TO−220AB
CASE 221A
STYLE 5
D PAK
CASE 418B
STYLE 2
1
2
3
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
4
Drain
Drain
NTx
45N06LG
AYWW
NTx45N06LG
AYWW
1
3
1
2
3
Gate
Source
Gate Drain Source
2
Drain
NTx45N06L = Device Code
x
= B or P
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
August, 2005 − Rev. 2
NTP45N06L/D
NTP45N06L, NTB45N06L
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
60
Unit
Vdc
Vdc
Vdc
Drain−to−Source Voltage
V
DSS
DGR
Drain−to−Gate Voltage (R = 10 MW)
V
60
GS
Gate−to−Source Voltage
− Continuous
V
V
"15
"20
GS
GS
− Non−Repetitive (t v10 ms)
p
Drain Current
− Continuous @ T = 25°C
I
I
45
30
150
Adc
Apk
A
D
D
− Continuous @ T = 100°C
A
− Single Pulse (t v10 ms)
I
p
DM
Total Power Dissipation @ T = 25°C
Derate above 25°C
P
125
0.83
3.2
W
W/°C
W
A
D
Total Power Dissipation @ T = 25°C (Note 1)
A
Total Power Dissipation @ T = 25°C (Note 2)
2.4
W
A
Operating and Storage Temperature Range
T , T
−55 to +175
240
°C
J
stg
Single Pulse Drain−to−Source Avalanche Energy − Starting T = 25°C
E
mJ
J
AS
(V = 50 Vdc, V = 5.0 Vdc, L = 0.3 mH
DD
GS
I
= 40 A, V = 60 Vdc, R = 25 W)
DS G
L(pk)
Thermal Resistance
°C/W
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
R
R
R
1.2
46.8
63.2
q
JC
JA
JA
q
q
Maximum Lead Temperature for Soldering Purposes, 1/8 in from case for 10 seconds
T
260
°C
L
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
2
1. When surface mounted to an FR4 board using 1″ pad size, (Cu Area 1.127 in ).
2
2. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in ).
ORDERING INFORMATION
†
Device
Package
Shipping
NTP45N06L
TO−220
50 Units / Rail
50 Units / Rail
NTP45N06LG
TO−220
(Pb−Free)
2
NTB45N06L
D PAK
50 Units / Rail
50 Units / Rail
2
NTB45N06LG
D PAK
(Pb−Free)
2
NTB45N06LT4
D PAK
800 Tape & Reel
800 Tape & Reel
2
NTB45N06LT4G
D PAK
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
NTP45N06L, NTB45N06L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(V = 0 Vdc, I = 250 mAdc)
V
Vdc
(BR)DSS
60
−
67
67.2
−
−
GS
D
Temperature Coefficient (Positive)
mV/°C
mAdc
Zero Gate Voltage Drain Current
I
I
DSS
GSS
(V = 60 Vdc, V = 0 Vdc)
−
−
−
−
1.0
10
DS
GS
(V = 60 Vdc, V = 0 Vdc, T = 150°C)
DS
GS
J
Gate−Body Leakage Current (V
=
15 Vdc, V = 0 Vdc)
−
−
100
nAdc
Vdc
GS
DS
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage (Note 4)
V
GS(th)
(V = V , I = 250 mAdc)
Threshold Temperature Coefficient (Negative)
1.0
−
1.8
4.7
2.0
−
DS
GS
D
mV/°C
mW
Static Drain−to−Source On−Resistance (Note 4)
R
V
DS(on)
(V = 5.0 Vdc, I = 22.5 Adc)
−
23
28
GS
D
Static Drain−to−Source On−Voltage (Note 4)
(V = 5.0 Vdc, I = 45 Adc)
Vdc
DS(on)
−
−
1.03
0.93
1.51
−
GS
D
(V = 5.0 Vdc, I = 22.5 Adc, T = 150°C)
GS
D
J
Forward Transconductance (Note 4) (V = 8.0 Vdc, I = 12 Adc)
g
FS
−
22.8
−
mhos
pF
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
−
−
−
1212
352
90
1700
480
(V = 25 Vdc, V = 0 Vdc,
DS
GS
Output Capacitance
Transfer Capacitance
C
oss
f = 1.0 MHz)
C
rss
180
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
−
−
−
−
−
−
−
13
341
36
30
680
75
320
32
−
ns
d(on)
Rise Time
t
r
(V = 30 Vdc, I = 45 Adc,
= 5.0 Vdc, R = 9.1 W) (Note 4)
G
DD
D
V
GS
Turn−Off Delay Time
Fall Time
t
d(off)
t
158
23
f
Gate Charge
Q
T
Q
1
Q
2
nC
(V = 48 Vdc, I = 45 Adc,
DS
D
4.6
14.1
V
= 5.0 Vdc) (Note 4)
GS
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I = 45 Adc, V = 0 Vdc) (Note 4)
V
SD
−
−
1.01
0.92
1.15
−
Vdc
ns
S
GS
(I = 45 Adc, V = 0 Vdc, T = 150°C)
S
GS
J
Reverse Recovery Time
t
−
−
−
−
56
30
−
−
−
−
rr
(I = 45 Adc, V = 0 Vdc,
S
GS
t
a
dI /dt = 100 A/ms) (Note 4)
S
t
26
b
Reverse Recovery Stored Charge
Q
0.09
mC
RR
2
3. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in ).
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
3
NTP45N06L, NTB45N06L
80
70
60
50
40
30
20
10
80
V
= 5.5 V
GS
V
= 10 V
GS
V
> = 10 V
DS
70
60
50
40
30
20
10
V
= 5 V
GS
V
= 6 V
GS
V
= 4.5 V
GS
V
= 7 V
GS
V
= 4 V
GS
T = 25°C
J
V
= 8 V
GS
V
= 3.5 V
GS
T = 100°C
J
V
= 9 V
GS
T = −55°C
J
0
0
0
1
2
3
4
1.8
2.6
3.4
4.2
5
5.8
V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
V
, GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.046
0.042
0.038
0.034
0.03
0.046
0.042
0.038
0.034
0.03
V
= 5 V
GS
T = 100°C
J
T = 25°C
J
V
= 5 V
GS
0.026
0.022
0.018
0.014
0.026
0.022
0.018
T = −55°C
J
V
= 10 V
GS
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
70
80
I , DRAIN CURRENT (AMPS)
D
I , DRAIN CURRENT (AMPS)
D
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10000
1000
100
2
I
V
= 22.5 A
V
= 0 V
D
GS
= 5 V
GS
1.8
T = 150°C
J
1.6
1.4
1.2
1
T = 125°C
J
T = 100°C
J
0.8
10
0.6
−50 −25
0
25
50
75 100 125 150 175
0
10
20
30
40
50
60
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
4
NTP45N06L, NTB45N06L
6
4000
3600
3200
V
= 0 V
V
= 0 V
GS
T = 25°C
DS
J
C
C
Q
Q
iss
T
5
V
GS
Q
1
2
2800
2400
rss
4
3
2
1
0
2000
1600
1200
800
400
0
C
iss
C
oss
I
= 45 A
D
C
rss
T = 25°C
J
V
V
DS
10
5
0
5
10
15
20
25
0
4
8
12
16
20
24
GS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(VOLTS)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
48
40
32
24
16
V
= 30 V
= 45 A
= 5 V
DS
GS
V
= 0 V
GS
I
D
T = 25°C
J
V
t
t
r
f
100
t
d(off)
8
0
t
d(on)
10
1
10
R , GATE RESISTANCE (W)
100
0.6 0.64 0.68 0.72 0.76 0.8 0.84 0.88 0.92 0.96
1
V
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
SD
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
280
240
V
= 15 V
GS
I
= 45 A
D
SINGLE PULSE
= 25°C
T
C
100
10
1
200
160
120
80
dc
10 ms
1 ms
100 ms
R
Limit
Thermal Limit
Package Limit
DS(on)
40
0.1
0.10
0
1
10
100
25
50
75
100
125
150
175
V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
T , STARTING JUNCTION TEMPERATURE (°C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
5
NTP45N06L, NTB45N06L
1
Normalized to R
at Steady State
q
JC
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t, TIME (s)
Figure 13. Thermal Response
10
Normalized to R
1″ square Cu Pad, Cu Area 1.127 in ,
3 x 3 inch FR4 board
at Steady State,
q
JA
2
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, TIME (s)
Figure 14. Thermal Response
http://onsemi.com
6
NTP45N06L, NTB45N06L
PACKAGE DIMENSIONS
D2PAK
CASE 418B−04
ISSUE J
NOTES:
C
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
E
V
W
−B−
4
INCHES
DIM MIN MAX
MILLIMETERS
MIN
MAX
A
B
C
D
E
F
G
H
J
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
8.64
9.65 10.29
4.06
0.51
1.14
7.87
9.65
A
4.83
0.89
1.40
8.89
S
1
2
3
2.54 BSC
−T−
SEATING
PLANE
K
0.080
0.018 0.025
0.090 0.110
0.110
2.03
0.46
2.29
1.32
7.11
5.00 REF
2.00 REF
0.99 REF
2.79
0.64
2.79
1.83
8.13
W
J
G
K
L
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
H
M
N
P
R
S
V
D 3 PL
M
M
0.13 (0.005)
T B
0.575 0.625 14.60 15.88
0.045 0.055 1.14 1.40
STYLE 2:
PIN 1. GATE
VARIABLE
CONFIGURATION
ZONE
2. DRAIN
3. SOURCE
4. DRAIN
N
P
R
U
L
L
L
M
M
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
SOLDERING FOOTPRINT*
8.38
0.33
1.016
0.04
10.66
0.42
5.08
0.20
3.05
0.12
17.02
0.67
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
7
NTP45N06L, NTB45N06L
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
−T−
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
B
F
T
S
4
INCHES
DIM MIN MAX
MILLIMETERS
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
−−−
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
−−−
A
K
Q
Z
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
−−−
1
2
3
U
H
G
H
J
K
L
L
R
N
Q
R
S
T
V
J
G
D
U
V
Z
N
−−− 0.080
2.04
STYLE 5:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
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Order Literature: http://www.onsemi.com/litorder
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Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
NTP45N06L/D
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