NTP5863NG [ONSEMI]
Power MOSFET 60V 97A 7.8 mOhm Single N-Channel TO-220;
| 型号： | NTP5863NG |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET 60V 97A 7.8 mOhm Single N-Channel TO-220 局域网 脉冲 晶体管 |
| 文件： | 总6页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTP5863N
N-Channel Power MOSFET
60 V, 97 A, 7.8 mW
Features
• Low R
DS(on)
• High Current Capability
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• 100% Avalanche Tested
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
60 V
7.8 mW @ 10 V
97 A
MAXIMUM RATINGS (T = 25°C Unless otherwise specified)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
D
V
DSS
Gate−to−Source Voltage − Continuous
V
$20
30
V
GS
GS
Gate−to−Source Voltage − Nonrepetitive
(T < 10 ms)
P
V
V
G
Continuous Drain
Current
Steady
State
T
= 25°C
= 100°C
= 25°C
I
97
68
A
C
D
T
C
S
N−CHANNEL MOSFET
Power Dissipation
Steady
State
T
C
P
150
W
D
4
Pulsed Drain Current
t = 10 ms
p
I
383
A
DM
Operating and Storage Temperature Range
T , T
−55 to
+175
°C
J
stg
Source Current (Body Diode)
I
S
97
A
Single Pulse Drain−to−Source Avalanche
E
AS
157
mJ
TO−220AB
Energy (L = 0.1 mH, I
= 56 A)
L(pk)
CASE 221A
STYLE 5
1
Peak Diode Recovery (dV/dt)
dV/dt
4.1
V/ns
2
3
Lead Temperature for Soldering
Purposes (1/8″ from Case for 10 Seconds)
T
L
260
°C
MARKING DIAGRAMS
& PIN ASSIGNMENTS
THERMAL RESISTANCE RATINGS
Parameter
4
Drain
Symbol
Max
1.0
36
Unit
Junction−to−Case (Drain) Steady State
Junction−to−Ambient − Steady State (Note 1)
R
°C/W
q
JC
R
q
JA
NTP
5863NG
AYWW
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
1
Gate
3
Source
(Cu Area 1.127 sq in [2 oz] including traces).
2
Drain
G
= Pb−Free Device
A
Y
= Assembly Location
= Year
WW
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
July, 2011 − Rev. 2
NTP5863N/D
NTP5863N
ELECTRICAL CHARACTERISTICS (T = 25°C Unless otherwise specified)
J
Characteristics
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
DS
= 0 V, I = 250 mA
60
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
47
mV/°C
(BR)DSS
I
D
= 250 mA, ref to 25°C
Zero Gate Voltage Drain Current
I
T = 25°C
1.0
50
mA
DSS
J
V
DS
= 0 V
= 60 V
GS
V
T = 125°C
J
Gate−Body Leakage Current
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
I
V
= 0 V, V = $20 V
$100
nA
GSS
DS
GS
V
GS(th)
V
= V , I = 250 mA
2.0
4.0
7.8
V
mV/°C
mW
S
GS
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On−Resistance
Forward Transconductance
V
/T
9.1
6.5
12
GS(th)
J
R
V
= 10 V, I = 20 A
GS D
DS(on)
g
V
= 15 V, I = 30 A
DS D
FS
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
3200
350
230
55
pF
nC
iss
V
DS
= 25 V, V = 0 V,
GS
Output Capacitance
Transfer Capacitance
Total Gate Charge
C
oss
f = 1 MHz
C
rss
Q
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Q
3.4
G(TH)
V
GS
= 10 V, V = 48 V,
DS
I
= 48 A
D
Q
14.5
19
GS
Q
GD
R
0.4
W
G
SWITCHING CHARACTERISTICS, V = 10 V (Note 3)
GS
Turn−On Delay Time
Rise Time
t
10
34
25
9.0
ns
d(on)
t
r
V
= 10 V, V = 48 V,
DD
GS
D
I
= 48 A, R = 2.5 W
G
Turn−Off Delay Time
Fall Time
t
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.96
0.85
32
1.5
V
dc
SD
J
V
S
= 0 V
GS
I
= 48 A
T = 150°C
J
Reverse Recovery Time
Charge Time
t
ns
rr
t
20
a
V
= 0 V , I = 48 A ,
dc S dc
dI /dt = 100 A/ms
GS
S
Discharge Time
t
12
b
Reverse Recovery Stored Charge
Q
28
nC
RR
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTP5863N
TYPICAL PERFORMANCE CHARACTERISTICS
200
175
150
125
100
75
200
T = 25°C
10 V
J
V
DS
≥ 10 V
7.0 V
175
150
125
100
75
7.5 V
V
= 6.5 V
GS
5.5 V
5.0 V
4.5 V
T = 25°C
J
50
25
0
50
25
0
T = 125°C
J
T = −55°C
J
0
1
2
3
4
5
2
3
4
5
6
7
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.030
0.025
0.020
0.015
0.010
0.005
0.000
0.0080
0.0075
0.0070
I
= 20 A
T = 25°C
D
J
T = 25°C
J
V
= 10 V
GS
0.0065
0.0060
4
5
6
7
8
9
10
10
20
30
40
50
60
70
80
90 100
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
100,000
10,000
V = 0 V
GS
I
V
= 20 A
D
= 10 V
GS
T = 150°C
J
T = 25°C
J
1000
100
−50 −25
0
25
50
75
100 125 150 175
10
20
V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
30
40
50
60
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTP5863N
TYPICAL PERFORMANCE CHARACTERISTICS
4000
3500
3000
2500
2000
1500
10
75
60
45
30
QT
C
V
= 0 V
iss
GS
T = 25°C
J
8
6
4
V
DS
V
GS
Q
Q
gd
gs
1000
500
0
2
0
15
0
C
oss
I
= 48 A
D
T = 25°C
J
C
rss
0
10
20
30
40
50
60
0
10
20
30
40
50
60
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
100
10
100
V
= 0 V
GS
J
V
= 48 V
= 10 V
DD
= 48 A
T = 25°C
I
D
80
60
40
V
GS
t
r
t
d(on)
t
d(off)
t
f
20
0
1
1
10
R , GATE RESISTANCE (W)
100
0.0
0.2
0.4
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.6
0.8
1.0
1.2
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
160
10 ms
100 ms
1 ms
10 ms
dc
I
D
= 56 A
140
120
100
80
10
1
V
= 10 V
GS
60
Single Pulse
T
C
= 25°C
40
R
Limit
DS(on)
20
Thermal Limit
Package Limit
0.1
0.1
0
25
1
10
100
50
75
100
125
150
175
T , STARTING JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
NTP5863N
TYPICAL PERFORMANCE CHARACTERISTICS
10
1
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (s)
Figure 13. Thermal Response
ORDERING INFORMATION
Device
†
Package
Shipping
NTP5863NG
TO−220AB
(Pb−Free)
50 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
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