NTPF600N80S3Z [ONSEMI]
MOSFET – Power, N-Channel, SUPERFET® III, 800 V, 8 A, 600 mΩ, TO-220F;
| 型号： | NTPF600N80S3Z |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET – Power, N-Channel, SUPERFET® III, 800 V, 8 A, 600 mΩ, TO-220F |
| 文件： | 总9页 (文件大小：212K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET – Power,
N-Channel, SUPERFET) III
800 V, 600 mW, 8 A
NTPF600N80S3Z
Description
www.onsemi.com
800 V SUPERFET III MOSFET is ON Semiconductor’s high
performance MOSFET family offering 800 V breakdown voltage.
New 800 V SUPERFET III MOSFET which is optimized for
primary switch of flyback converter, enables lower switching losses
and case temperature without sacrificing EMI performance thanks to
its optimized design. In addition, internal Zener Diode significantly
improves ESD capability.
This new family of 800 V SUPERFET III MOSFET enables to
make more efficient, compact, cooler and more robust applications
because of its remarkable performance in switching power applications
such as Laptop adapter, Audio, Lighting, ATX power and industrial
power supplies.
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
800 V
600 mW
8 A
D
G
Features
• Typ. R
= 550 mW
DS(on)
S
• Ultra Low Gate Charge (Typ. Q = 15.5 nC)
g
POWER MOSFET
• Low Stored Energy in Output Capacitance (Eoss = 1.74 mJ @ 400 V)
• 100% Avalanche Tested
• ESD Improved Capability with Zener Diode
• RoHS Compliant
Applications
• Adapters / Chargers
• LED Lighting
• AUX Power
• Audio
G
D
S
TO−220F
CASE 221D
• Industrial Power
MARKING DIAGRAM
T600N
80S3Z
AYWWZZ
T600N80S3Z
A
Y
= Specific Device Code
= Assembly Location
= Year
WW
ZZ
= Work Week
= Lot Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
May, 2021 − Rev. 2
NTPF600N80S3Z/D
NTPF600N80S3Z
ABSOLUTE MAXIMUM RATINGS (T = 25°C, unless otherwise noted)
J
Symbol
V
Parameter
Value
800
20
Unit
V
Drain−to−Source Voltage
DSS
V
GS
Gate−to−Source Voltage
DC
V
AC (f > 1 Hz)
30
I
D
Drain Current
Continuous (T = 25°C)
8*
A
C
Continuous (T = 100°C)
5*
C
I
Drain Current
Pulsed (Note 1)
21*
A
mJ
A
DM
E
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 2)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
24
AS
AS
I
1.2
E
0.28
100
10
mJ
V/ns
AR
dv/dt
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
P
(T = 25°C)
C
28
W
W/°C
°C
D
Derate Above 25°C
0.23
−55 to +150
260
T , T
Operating and Storage Temperature Range
J
STG
T
Lead Temperature Soldering Reflow for Soldering Purposes
(1/8″ from Case for 10 seconds)
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
*Drain current limited by maximum junction temperature.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I = 1.2 A, R = 25 W, starting T = 25°C.
AS
G
J
3. I ≤ 2 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.
SD
DD
J
THERMAL RESISTANCE RATINGS
Symbol
Parameter
Value
4.4
Unit
R
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State
_C/W
q
JC
JA
R
62.5
q
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packaging Method
Reel Size
Tape Width
Quantity
NTPF600N80S3Z
NTPF600N80S3Z
TO−220F
Tube
N/A
N/A
50 Units
www.onsemi.com
2
NTPF600N80S3Z
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain−to−Source Breakdown Voltage
800
900
V
V
V
V
I
= 0 V, I = 1 mA, T = 25_C
DSS
GS
D
J
= 0 V, I = 1 mA, T = 150_C
GS
D
J
DBV
/ DT
Drain−to−Source Breakdown Voltage
Temperature Coefficient
= 1 mA, Referenced to 25_C
1.1
0.8
V/_C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
= 800 V, V = 0 V
1
1
mA
DSS
GS
= 640 V, T = 125_C
C
I
Gate−to−Body Leakage Current
= 20 V, V = 0 V
DS
mA
GSS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
GS
V
GS
V
DS
= V , I = 0.18 mA
2.2
3.8
V
mW
S
GS(th)
DS(on)
DS
D
R
Static Drain−to−Source On Resistance
Forward Transconductance
= 10 V, I = 4 A
550
9.4
600
D
g
FS
= 20 V, I = 4 A
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 400 V, V = 0 V, f = 250 kHz
725
12
pF
pF
pF
pF
nC
nC
nC
W
iss
DS
GS
C
Output Capacitance
oss
C
Effective Output Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10 V
Gate−to−Source Gate Charge
Gate−to−Drain “Miller” Charge
Equivalent Series Resistance
V
DS
V
DS
V
DD
= 0 V to 400 V, V = 0 V
139
21
oss(eff.)
GS
C
= 0 V to 400 V, V = 0 V
GS
oss(er.)
Q
= 400 V, I = 4 A, V = 10 V
15.5
3.1
5.1
3.5
g(tot)
D
GS
(Note 4)
Q
gs
Q
gd
ESR
f = 1 MHz
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
= 400 V, I = 4 A, V = 10 V,
12.3
5.9
ns
ns
ns
ns
d(on)
DD
g
D
GS
R = 4.7 W
t
r
(Note 4)
t
39.5
8.2
d(off)
t
f
SOURCE−TO−DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Source−to−Drain Diode Forward Current
Maximum Pulsed Source−to−Drain Diode Forward Current
8
A
A
S
I
21
1.2
SM
V
SD
Source−to−Drain Diode Forward Voltage
Reverse Recovery Time
V
V
= 0 V, I = 4 A
V
GS
SD
t
= 0 V, I = 2 A,
137
ns
mC
rr
GS
SD
dI /dt = 100 A/ms
F
Q
Reverse Recovery Charge
0.91
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
www.onsemi.com
3
NTPF600N80S3Z
TYPICAL CHARACTERISTICS
25
20
15
10
5
100
T = 25_C
J
V
DS
= 20 V
V
GS
= 20 V
10 V
7.0 V
5.5 V
10
4.0 V
T = 25_C
J
T = 150_C
T = *55_C
J
J
1
0
2
3
4
5
6
1.2
20
0
5
10
15
20
25
30
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
1.50
1.25
1.00
0.75
0.50
0.25
0.00
V
= 0 V
10
1
GS
V
GS
= 10 V
V
= 20 V
0.1
GS
0.01
T = 150°C
J
= 25°C
T = *55°C
T
J
J
0.001
0
5
10
15
0.0
0.2
0.4
0.6
0.8
1.0
I , DRAIN CURRENT (A)
D
V
, BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 3. On Resistance vs. Drain Current
Figure 4. Diode Forward Voltage vs. Current
100,000
10,000
1000
100
10
8
V
= 130 V
DD
I
D
= 4.0 A
V
DD
= 400 V
C
C
iss
6
4
oss
f = 250 kHz
= 0 V
10
V
C
C
C
GS
C
rss
= C
= C + C
= C + C (C = shorted)
rss
oss
iss
gd
2
1
ds gd
gs
gd
ds
0.1
0
0.01
0.1
1
10
100
1000
0
5
10
15
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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4
NTPF600N80S3Z
TYPICAL CHARACTERISTICS
3.0
1.2
1.1
1.0
0.9
0.8
I
= 10 mA
D
= 4.0 A
I
D
2.5
2.0
1.5
1.0
0.5
0.0
V
= 10 V
GS
*75 *50 *25
0
25 50 75 100 125 150 175
*75 *50 *25
0
25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Normalized BVDSS vs. Temperature
Figure 8. On−Resistance Variation vs.
Temperature
100
10
5
4
100 ms
3
2
1 ms
1
10 ms
0.1
0.01
DC
1
0
Single Pulse
T
= 25_C
C
1
10
100
1000
0
100
200 300 400
500
600 700 800
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 9. Safe Operating Area
Figure 10. Eoss vs. Drain−to−Source Voltage
1
50% Duty Cycle
20%
10%
5%
P
DM
0.1
2%
t
1
t
2
1%
Z
R
(t) = r(t) x R
0.01
q
q
JC
JC
= 4.4°C/W
q
JC
Peak T = P
Duty Cycle, D = t / t
x Z (t) + T
q
JC C
J
DM
Single Pulse
1
2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , RECTANGULAR PULSE DURATION (sec)
1
Figure 11. Transient Thermal Impedance
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5
NTPF600N80S3Z
V
GS
R
Q
g
L
V
DD
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 12. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
r
t
f
t
t
d(off)
d(on)
t
on
t
off
Figure 13. Resistive Switching Test Circuit & Waveforms
L
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
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6
NTPF600N80S3Z
+
DUT
V
SD
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE K
DATE 27 FEB 2009
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
−T−
PLANE
−B−
C
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
F
S
Q
INCHES
DIM MIN MAX
MILLIMETERS
U
SCALE 1:1
MIN
15.67
9.96
4.50
0.60
2.95
MAX
16.12
10.63
4.90
A
B
C
D
F
0.617
0.392
0.177
0.024
0.116
0.635
0.419
0.193
0.039
0.129
A
1
2 3
1.00
3.28
H
G
H
J
0.100 BSC
2.54 BSC
−Y−
K
0.118
0.018
0.503
0.048
0.135
0.025
0.541
0.058
3.00
0.45
3.43
0.63
K
L
12.78
1.23
13.73
1.47
G
N
J
N
Q
R
S
U
0.200 BSC
5.08 BSC
R
0.122
0.099
0.092
0.239
0.138
0.117
0.113
0.271
3.10
2.51
2.34
6.06
3.50
2.96
2.87
6.88
L
D 3 PL
M
M
0.25 (0.010)
B
Y
MARKING
DIAGRAMS
STYLE 1:
PIN 1. GATE
2. DRAIN
STYLE 2:
PIN 1. BASE
STYLE 3:
PIN 1. ANODE
2. COLLECTOR
3. EMITTER
2. CATHODE
3. ANODE
3. SOURCE
AYWW
xxxxxxG
AKA
STYLE 4:
STYLE 5:
STYLE 6:
PIN 1. MT 1
2. MT 2
xxxxxxG
AYWW
PIN 1. CATHODE
2. ANODE
3. CATHODE
PIN 1. CATHODE
2. ANODE
3. GATE
3. GATE
Bipolar
Rectifier
A
Y
WW
= Assembly Location
= Year
= Work Week
xxxxxx = Specific Device Code
G
= Pb−Free Package
= Assembly Location
= Year
A
Y
xxxxxx = Device Code
G
AKA
= Pb−Free Package
= Polarity Designator
WW
= Work Week
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42514B
TO−220 FULLPAK
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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