NTS1045EMFST3G [ONSEMI]
Exceptionally Low Leakage Trench-based Schottky Rectifier;
| 型号： | NTS1045EMFST3G |
| 厂家： | 
ONSEMI |
| 描述： | Exceptionally Low Leakage Trench-based Schottky Rectifier |
| 文件： | 总5页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTS1045EMFS,
NRVTS1045EMFS
Exceptionally Low Leakage
Trench-based Schottky
Rectifier
http://onsemi.com
Features
• Fine Lithography Trench−based Schottky Technology for Very Low
Leakage
SCHOTTKY BARRIER
RECTIFIERS
• Fast Switching with Exceptional Temperature Stability
10 AMPERES
45 VOLTS
• Low Power Loss and Lower Operating Temperature
• Higher Efficiency for Achieving Regulatory Compliance
• Low Thermal Resistance
5,6
1,2,3
• High Surge Capability
• NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
MARKING
DIAGRAM
• These are Pb−Free and Halide−Free Devices
A
C
C
1
TE1045
AYWWZZ
A
A
Typical Applications
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
• Switching Power Supplies including Wireless, Smartphone and
Notebook Adapters
Not Used
• High Frequency and DC−DC Converters
• Freewheeling and OR−ing diodes
• Reverse Battery Protection
• Instrumentation
TE1045 = Specific Device Code
A
Y
= Assembly Location
= Year
W
ZZ
= Work Week
= Lot Traceability
Mechanical Characteristics:
• Case: Epoxy, Molded
ORDERING INFORMATION
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
• Lead Finish: 100% Matte Sn (Tin)
• Lead and Mounting SurfaceTemperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device
Package
Shipping†
NTS1045EMFST1G
SO−8 FL
(Pb−Free) Tape & Reel
1500 /
NTS1045EMFST3G
SO−8 FL 5000 /
• Device Meets MSL 1 Requirements
(Pb−Free) Tape & Reel
SO−8 FL 1500 /
NRVTS1045EMFST1G
NRVTS1045EMFST3G
(Pb−Free) Tape & Reel
SO−8 FL 5000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
July, 2014 − Rev. 0
NTS1045EMFS/D
NTS1045EMFS, NRVTS1045EMFS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
V
RWM
V
45
10
R
Average Rectified Forward Current
I
A
A
A
F(AV)
(Rated V , T = 166°C)
R
C
Peak Repetitive Forward Current,
I
20
FRM
(Rated V , Square Wave, 20 kHz, T = 162°C)
R
C
Non−Repetitive Peak Surge Current
I
210
FSM
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Storage Temperature Range
T
−65 to +150
−55 to +150
100
°C
°C
mJ
stg
Operating Junction Temperature
T
J
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)
ESD Rating (Human Body Model)
E
AS
3B
ESD Rating (Machine Model)
M4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm 1 oz. copper bond pad, on a FR4 board)
R
−
2.0
°C/W
θ
JC
2
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
v
V
F
(i = 5.0 Amps, T = 25°C)
0.42
0.48
−
0.60
F
J
(i = 10 Amps, T = 25°C)
F
J
(i = 5.0 Amps, T = 125°C)
0.34
0.41
−
0.53
F
J
(i = 10 Amps, T = 125°C)
F
J
Reverse Current (Note 1)
i
R
(Rated dc Voltage, T = 25°C)
20
7.0
50
20
mA
mA
J
(Rated dc Voltage, T = 125°C)
J
Diode Capacitance
C
pF
d
(Rated dc Voltage, T = 25°C, f = 1 MHz)
300
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
http://onsemi.com
2
NTS1045EMFS, NRVTS1045EMFS
TYPICAL CHARACTERISTICS
100
10
100
T = 175°C
A
T = 175°C
A
T = 150°C
10
T = 150°C
A
A
T = 125°C
A
T = 125°C
A
T = 25°C
A
T = 25°C
A
1
1
T = −55°C
A
T = −55°C
A
0.1
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
0.1 0.2 0.3
0.4 0.5 0.6 0.7 0.8 0.9
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E+00
1.E−01
1.E−02
1.E−03
1.E−04
1.E+00
1.E−01
T = 175°C
A
T = 150°C
A
T = 175°C
A
T = 125°C
A
T = 150°C
A
1.E−02
1.E−03
1.E−04
T = 125°C
A
T = 25°C
A
1.E−05
1.E−06
1.E−05
1.E−06
T = 25°C
A
0
5
10
15
20
25
30
35
40 45
0
5
10
15
20
25
30
35
40 45
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
20
15
10
10,000
T = 25°C
J
DC
Square Wave
1000
5
0
R
= 2.1°C/W
q
JC
100
1
10
50
100 110
120
130
140
150
160
170
V , REVERSE VOLTAGE (V)
R
T , CASE TEMPERATURE (°C)
C
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating
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3
NTS1045EMFS, NRVTS1045EMFS
TYPICAL CHARACTERISTICS
22
20
18
16
14
12
10
8
I
/I
= 20
PK AV
I
/I = 5
I /I = 10
PK AV
PK AV
T = 175°C
J
Square Wave
dc
6
4
2
0
0
2
4
6
8
10
12
14
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Figure 7. Forward Power Dissipation
100
10
1
50% (DUTY CYCLE)
20%
10%
5.0%
2.0%
1.0%
Assumes 25°C ambient and soldered to
2
a 600 mm − oz copper pad on PCB
0.1
SINGLE PULSE
0.01
0.000001 0.00001
0.0001
0.001
0.01
PULSE TIME (s)
0.1
1.0
10
100
1000
Figure 8. Typical Thermal Characteristics
10
1
50% (DUTY CYCLE)
20%
10%
5.0%
2.0%
Assumes 25°C ambient and soldered to
0.1
2
a 600 mm − oz copper pad on PCB
1.0%
SINGLE PULSE
0.000001
0.00001
0.01
0.0001
0.001
0.01
PULSE TIME (s)
0.1
1.0
10
100
1000
Figure 9. Typical Transient Thermal Response Characteristics, Junction−to−Case
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4
NTS1045EMFS, NRVTS1045EMFS
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE H
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
MIN
0.90
0.00
0.33
0.23
NOM
1.00
−−−
0.41
0.28
MAX
1.10
0.05
0.51
0.33
4 X
q
E1
2
c
D
5.15 BSC
4.90
4.00
6.15 BSC
5.90
3.65
1.27 BSC
0.61
1.35
0.61
0.17
D1
D2
E
E1
E2
e
G
K
L
L1
M
4.70
3.80
5.10
4.20
c
A1
5.70
3.45
6.10
3.85
1
2
3
4
0.51
1.20
0.51
0.05
3.00
0
0.71
1.50
0.71
0.20
3.80
TOP VIEW
C
3 X
e
SEATING
PLANE
0.10
0.10
C
C
3.40
−−−
DETAIL A
q
12
A
_
_
STYLE 2:
SOLDERING FOOTPRINT*
PIN 1. ANODE
2. ANODE
SIDE VIEW
3X
1.270
4X
0.750
DETAIL A
3. ANODE
4. NO CONNECT
5. CATHODE
4X
b
8X
1.000
0.10
0.05
C
c
A
B
e/2
L
0.965
1
4
0.29X05
0.475
1.330
K
2X
0.495
4.530
E2
3.200
PIN 5
(EXPOSED PAD)
M
L1
2X
1.530
D2
BOTTOM VIEW
G
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
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PUBLICATION ORDERING INFORMATION
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Phone: 81−3−5817−1050
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NTS1045EMFS/D
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