NTS1245MFST1G [ONSEMI]
Schottky Rectifier;NTS1245MFS
Exceptionally Low Forward
Voltage Trench-based
Schottky Rectifier
Features
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• Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
SCHOTTKY BARRIER
RECTIFIERS
• Fast Switching with Exceptional Temperature Stability
• Low Power Loss and Lower Operating Temperature
• Higher Efficiency for Achieving Regulatory Compliance
• Low Thermal Resistance
12 AMPERES
45 VOLTS
• High Surge Capability
• These are Pb−Free and Halide−Free Devices
5,6
1,2,3
Typical Applications
• Switching Power Supplies including Wireless, Smartphone and
Notebook Adapters
MARKING
DIAGRAM
A
• High Frequency and DC−DC Converters
• Freewheeling and OR−ing diodes
• Reverse Battery Protection
• Instrumentation
C
C
1
TH1245
AYWWZZ
A
A
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
Not Used
TH1245 = Specific Device Code
Mechanical Characteristics:
A
Y
= Assembly Location
= Year
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
• Lead Finish: 100% Matte Sn (Tin)
W
ZZ
= Work Week
= Lot Traceability
• Lead and Mounting SurfaceTemperature for Soldering Purposes:
260°C Max. for 10 Seconds
ORDERING INFORMATION
• Device Meets MSL 1 Requirements
Device
Package
Shipping†
NTS1245MFST1G
SO−8 FL
1500 /
(Pb−Free)
Tape & Reel
NTS1245MFST3G
SO−8 FL
5000 /
(Pb−Free)
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
August, 2014 − Rev. 0
NTS1245MFS/D
NTS1245MFS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
V
RWM
V
45
12
R
Average Rectified Forward Current
I
A
A
A
F(AV)
(Rated V , T = 142°C)
R
C
Peak Repetitive Forward Current,
I
24
FRM
(Rated V , Square Wave, 20 kHz, T = 140°C)
R
C
Non−Repetitive Peak Surge Current
I
210
FSM
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Storage Temperature Range
T
−65 to +150
−55 to +150
100
°C
°C
mJ
stg
Operating Junction Temperature
T
J
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)
ESD Rating (Human Body Model)
E
AS
3B
ESD Rating (Machine Model)
M4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm 1 oz. copper bond pad, on a FR4 board)
R
1.8
−
°C/W
θ
JC
2
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
v
V
F
(i = 6.0 Amps, T = 25°C)
0.42
0.48
−
0.57
F
J
(i = 12 Amps, T = 25°C)
F
J
(i = 6.0 Amps, T = 125°C)
0.32
0.40
−
0.51
F
J
(i = 12 Amps, T = 125°C)
F
J
Instantaneous Reverse Current (Note 1)
i
R
(Rated dc Voltage, T = 25°C)
−
15
120
45
mA
mA
J
(Rated dc Voltage, T = 125°C)
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
NTS1245MFS
TYPICAL CHARACTERISTICS
100
10
100
T = 150°C
A
T = 125°C
A
T = 150°C
A
10
T = 125°C
A
T = 25°C
A
1
1
T = 25°C
A
T = −55°C
A
T = −55°C
A
0.1
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E−01
1.E−02
1.E−03
1.E−04
1.E+00
1.E−01
1.E−02
1.E−03
1.E−04
T = 150°C
A
T = 150°C
A
T = 125°C
A
T = 125°C
A
T = 25°C
A
1.E−05
1.E−06
T = 25°C
A
1.E−05
1.E−06
5
10
15
20
25
30
35
40
45
5
10
15
20
25
30
35
40
45
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
10,000
25
20
15
10
T = 25°C
J
DC
Square Wave
1000
100
5
0
R
= 1.8°C/W
q
JC
0.1
1
10
10
30
50
70
90
110 130 150 170
V , REVERSE VOLTAGE (V)
R
T , CASE TEMPERATURE (°C)
C
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating per Device
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3
NTS1245MFS
TYPICAL CHARACTERISTICS
22
20
18
16
14
12
10
8
I
/I
= 20
PK AV
I /I = 10
PK AV
I
/I = 5
PK AV
Square Wave
dc
6
4
2
0
0
1
2
3
4
5
6
7
8
9
10 11 12
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Figure 7. Forward Power Dissipation
100
10
1
50% (DUTY CYCLE)
20%
10%
5.0%
2.0%
Assumes 25°C ambient and soldered to
1.0%
2
a 600 mm − oz copper pad on PCB
0.1
SINGLE PULSE
0.01
0.000001 0.00001
0.0001
0.001
0.01
PULSE TIME (s)
0.1
1.0
10
100
1000
Figure 8. Typical Thermal Characteristics
10
1
50% (DUTY CYCLE)
20%
10%
5.0%
2.0%
Assumes 25°C ambient and soldered to
0.1
2
a 600 mm − oz copper pad on PCB
1.0%
SINGLE PULSE
0.000001
0.00001
0.01
0.0001
0.001
0.01
0.1
1.0
10
100
1000
PULSE TIME (s)
Figure 9. Typical Transient Thermal Response Characteristics, Junction−to−Case
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4
NTS1245MFS
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE H
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
MIN
0.90
0.00
0.33
0.23
NOM
1.00
−−−
0.41
0.28
MAX
1.10
0.05
0.51
0.33
4 X
q
E1
2
c
D
5.15 BSC
4.90
4.00
6.15 BSC
5.90
3.65
1.27 BSC
0.61
1.35
0.61
0.17
D1
D2
E
E1
E2
e
G
K
L
L1
M
4.70
3.80
5.10
4.20
c
A1
5.70
3.45
6.10
3.85
1
2
3
4
0.51
1.20
0.51
0.05
3.00
0
0.71
1.50
0.71
0.20
3.80
TOP VIEW
C
3 X
e
SEATING
PLANE
0.10
0.10
C
C
3.40
−−−
DETAIL A
q
12
A
_
_
STYLE 2:
SOLDERING FOOTPRINT*
PIN 1. ANODE
2. ANODE
SIDE VIEW
3X
1.270
4X
0.750
DETAIL A
3. ANODE
4. NO CONNECT
5. CATHODE
4X
b
8X
1.000
0.10 C A
B
e/2
0.05
c
L
0.965
1
4
0.29X05
0.475
1.330
K
2X
0.495
4.530
E2
3.200
PIN 5
(EXPOSED PAD)
M
L1
2X
1.530
D2
BOTTOM VIEW
G
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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PUBLICATION ORDERING INFORMATION
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
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For additional information, please contact your local
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NTS1245MFS/D
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