NTS860MFS [ONSEMI]
Exceptionally Low Forward Voltage Trench-based Schottky Rectifier;
| 型号： | NTS860MFS |
| 厂家： | 
ONSEMI |
| 描述： | Exceptionally Low Forward Voltage Trench-based Schottky Rectifier |
| 文件： | 总5页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTS860MFS
Exceptionally Low Forward
Voltage Trench-based
Schottky Rectifier
Features
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• Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
SCHOTTKY BARRIER
RECTIFIERS
• Fast Switching with Exceptional Temperature Stability
• Low Power Loss and Lower Operating Temperature
• Higher Efficiency for Achieving Regulatory Compliance
• Low Thermal Resistance
8 AMPERES
60 VOLTS
• High Surge Capability
• These are Pb−Free and Halide−Free Devices
5,6
1,2,3
Typical Applications
• Switching Power Supplies including Wireless, Smartphone and
Notebook Adapters
MARKING
DIAGRAM
A
• High Frequency and DC−DC Converters
• Freewheeling and OR−ing diodes
• Reverse Battery Protection
• Instrumentation
C
C
1
A
A
TH0860
AYWWZZ
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
Not Used
TH0860 = Specific Device Code
Mechanical Characteristics:
A
Y
= Assembly Location
= Year
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
• Lead Finish: 100% Matte Sn (Tin)
W
ZZ
= Work Week
= Lot Traceability
• Lead and Mounting SurfaceTemperature for Soldering Purposes:
260°C Max. for 10 Seconds
ORDERING INFORMATION
• Device Meets MSL 1 Requirements
Device
Package
Shipping†
NTS860MFST1G
SO−8 FL
1500 /
(Pb−Free)
Tape & Reel
NTS860MFST3G
SO−8 FL
5000 /
(Pb−Free)
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
November, 2014 − Rev. 0
NTS860MFS/D
NTS860MFS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
V
RWM
V
60
R
Average Rectified Forward Current
I
8.0
A
A
A
F(AV)
(Rated V , T = 140°C)
R
C
Peak Repetitive Forward Current,
I
16
FRM
(Rated V , Square Wave, 20 kHz, T = 137°C)
R
C
Non−Repetitive Peak Surge Current
I
150
FSM
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Storage Temperature Range
T
−65 to +150
−55 to +150
100
°C
°C
mJ
stg
Operating Junction Temperature
T
J
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)
ESD Rating (Human Body Model)
E
AS
3B
ESD Rating (Machine Model)
M4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm 1 oz. copper bond pad, on a FR4 board)
R
2.2
°C/W
θ
JC
2
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Instantaneous Forward Voltage (Note 1)
v
V
F
(i = 4.0 Amps, T = 25°C)
0.48
0.54
−
0.62
F
J
(i = 8.0 Amps, T = 25°C)
F
J
(i = 4.0 Amps, T = 125°C)
0.39
0.49
−
0.57
F
J
(i = 8.0 Amps, T = 125°C)
F
J
Instantaneous Reverse Current (Note 1)
i
R
(Rated dc Voltage, T = 25°C)
−
5
55
15
mA
mA
J
(Rated dc Voltage, T = 125°C)
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
NTS860MFS
TYPICAL CHARACTERISTICS
100
10
100
T = 150°C
A
T = 150°C
A
10
T = 125°C
A
T = 125°C
A
T = 25°C
A
1
1
T = 25°C
A
T = −55°C
A
T = −55°C
A
0.1
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
5
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E+00
1.E−01
1.E−02
1.E−03
1.E−04
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
T = 150°C
A
T = 150°C
A
T = 125°C
A
T = 125°C
A
T = 25°C
A
T = 25°C
A
1.E−06
1.E−07
1.E−05
1.E−06
5
10 15 20 25 30 35 40 45 50 55 60
10 15 20 25 30 35 40 45 50 55 60
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
10,000
18
16
14
12
10
8
T = 25°C
J
DC
Square Wave
1000
6
4
R
= 2.2°C/W
q
JC
2
0
100
0.1
1
10
20
40
60
80
100
120
140
V , REVERSE VOLTAGE (V)
R
T , CASE TEMPERATURE (°C)
C
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating per Device
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3
NTS860MFS
TYPICAL CHARACTERISTICS
20
18
16
14
12
10
8
I
/I = 10
I
/I
= 20
PK AV
PK AV
I /I = 5
PK AV
Square Wave
6
4
dc
2
0
0
1
2
3
4
5
6
7
8
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Figure 7. Forward Power Dissipation
100
10
1
50% (DUTY CYCLE)
20%
10%
5.0%
2.0%
1.0%
Assumes 25°C ambient and soldered to
2
a 600 mm − oz copper pad on PCB
0.1
SINGLE PULSE
0.01
0.000001 0.00001
0.0001
0.001
0.01
PULSE TIME (s)
0.1
1.0
10
100
1000
Figure 8. Typical Thermal Characteristics
10
1
50% (DUTY CYCLE)
20%
10%
5.0%
2.0%
1.0%
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (s)
0.1
1.0
10
100
1000
Figure 9. Typical Transient Thermal Response Characteristics, Junction−to−Case
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4
NTS860MFS
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE L
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
5.90
3.65
1.27 BSC
0.61
1.35
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
1
2
3
4
G
K
L
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
3 X
e
0.61
SEATING
L1
M
0.125 REF
3.40
−−−
PLANE
0.10
0.10
C
C
3.00
0
3.80
DETAIL A
q
12
A
_
_
STYLE 2:
RECOMMENDED
SOLDERING FOOTPRINT*
PIN 1. ANODE
2. ANODE
SIDE VIEW
DETAIL A
3. ANODE
4. NO CONNECT
5. CATHODE
2X
0.495
4.560
b
8X
2X
1.530
0.10 C A
B
e/2
0.05
c
L
1
4
3.200
1.330
K
4.530
E2
PIN 5
M
0.29X05
0.965
L1
(EXPOSED PAD)
1
D2
BOTTOM VIEW
G
4X
1.000
4X
1.270
PITCH
0.750
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
NTS860MFS/D
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