NTST40H120ECTG [ONSEMI]
沟槽肖特基整流器，极低漏，40A，120V，双裸片;
| 型号： | NTST40H120ECTG |
| 厂家： | 
ONSEMI |
| 描述： | 沟槽肖特基整流器，极低漏，40A，120V，双裸片 局域网 功效 瞄准线 二极管 |
| 文件： | 总5页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTST40H120ECTG
Very Low Leakage
Trench-based Schottky
Rectifier
Features
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• Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
VERY LOW LEAKAGE,
SCHOTTKY BARRIER
RECTIFIERS 40 AMPERES,
120 VOLTS
• Fast Switching with Exceptional Temperature Stability
• Low Power Loss and Lower Operating Temperature
• Higher Efficiency for Achieving Regulatory Compliance
• Low Thermal Resistance
• High Surge Capability
• These are Pb−Free Devices
PIN CONNECTIONS
1
Typical Applications
2, 4
• Switching Power Supplies including Notebook / Netbook Adapters,
ATX and Flat Panel Display
3
• High Frequency and DC−DC Converters
• Freewheeling and OR−ing diodes
• Reverse Battery Protection
4
• Instrumentation
Mechanical Characteristics
• Case: Epoxy, Molded
TO−220AB
CASE 221A
STYLE 6
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in
1
• Finish: All External Surfaces Corrosion Resistant and Terminal
2
3
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Maximum for
10 sec
MARKING DIAGRAM
AYWW
TS40H120EG
AKA
TO−220AB
A
Y
= Assembly Location
= Year
WW
AKA
G
= Work Week
= Polarity Designator
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
July, 2015 − Rev. 1
NTST40H120ECT/D
NTST40H120ECTG
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
120
V
RRM
V
RWM
V
R
Average Rectified Forward Current
I
A
A
A
F(AV)
(Rated V , T = 124°C)
Per device
Per diode
40
20
R
C
(Rated V , T = 134°C)
R
C
Peak Repetitive Forward Current
(Rated V , Square Wave, 20 kHz, T = 120°C)
I
FRM
Per device
Per diode
80
40
R
C
(Rated V , Square Wave, 20 kHz, T = 130°C)
R
C
Nonrepetitive Peak Surge Current
I
250
FSM
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Operating Junction Temperature
T
−40 to +150
−40 to +150
36
°C
°C
J
Storage Temperature
T
stg
Voltage Rate of Change
dV/dt
V/ns
(Rated V )
R
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Symbol NTST40H120ECTG
Unit
Maximum Thermal Resistance per Device
Junction−to−Case
Junction−to−Ambient
R
R
0.81
70
°C/W
°C/W
q
JC
JA
q
ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted)
Rating
Symbol
Typ
Max
Unit
Maximum Instantaneous Forward Voltage (Note 1)
v
V
F
(I = 5 A, T = 25°C)
0.54
0.67
0.84
−
−
0.93
F
J
(I = 10 A, T = 25°C)
F
J
(I = 20 A, T = 25°C)
F
J
(I = 5 A, T = 125°C)
0.47
0.56
0.66
−
−
0.7
F
J
(I = 10 A, T = 125°C)
F
J
(I = 20 A, T = 125°C)
F
J
Maximum Instantaneous Reverse Current (Note 1)
I
R
(V = 90 V, T = 25°C)
3
5
−
−
mA
mA
R
J
(V = 90 V, T = 125°C)
R
J
(Rated dc Voltage, T = 25°C)
−
7
25
28
mA
mA
J
(Rated dc Voltage, T = 125°C)
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%
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2
NTST40H120ECTG
TYPICAL CHARACTERISTICS
100
10
100
T = 175°C
A
T = 175°C
A
T = 150°C
T = 150°C
A
A
T = 125°C
A
10 T = 125°C
A
T = 25°C
A
T = 25°C
A
1
1
T = −40°C
A
T = −40°C
A
0.1
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E−01
1.E−02
1.E−03
1.E−04
1.E−01
1.E−02
1.E−03
1.E−04
T = 175°C
T = 175°C
A
A
T = 150°C
A
T = 125°C
A
T = 125°C
A
T = 150°C
A
T = 25°C
A
1.E−05
1.E−06
1.E−05
1.E−06
T = 25°C
A
10 20 30 40 50 60 70 80 90 100 110 120
10 20 30 40 50 60 70 80 90 100 110 120
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
10,000
35
30
25
20
15
10
DC
T = 25°C
J
Square Wave
1000
100
5
0
R
= 1.3°C/W
JC
q
0.1
1
10
100
0 10
30
50
70
90
110
130 150
V , REVERSE VOLTAGE (V)
R
T , CASE TEMPERATURE (°C)
C
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating per Diode
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3
NTST40H120ECTG
TYPICAL CHARACTERISTICS
70
60
50
40
30
20
18
I
/I = 10
Square Wave
DC
PK AV
16
14
12
10
8
I /I = 5
PK AV
I
/I = 20
PK AV
DC
Square Wave
6
4
10
0
R
= 0.81°C/W
q
JC
2
0
0 10
30
50
70
90
110
130 150
0
2
4
6
8
10 12 14 16 18 20 22 24
T , CASE TEMPERATURE (°C)
C
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Figure 7. Current Derating per Device
Figure 8. Forward Power Dissipation
100
10
50% Duty Cycle
20%
10%
5%
2%
1%
1
0.1
2
Junction−to−Ambient, PCB area 100 mm , PCB
thk 1 oz, Die area 19.52 mm , Active area 41.7%
0.01
2
Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (s)
Figure 9. Thermal Characteristics
ORDERING INFORMATION
Device
Package
Shipping
50 Units / Rail
NTST40H120ECTG
TO−220AB
(Pb−Free)
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4
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TECHNICAL PUBLICATIONS:
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onsemi Website: www.onsemi.com
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For additional information, please contact your local Sales Representative at
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