NTTFS020N06CTAG [ONSEMI]
Single N−Channel Power MOSFET 60V, 27A, 20.3mΩ in u8FL;
| 型号： | NTTFS020N06CTAG |
| 厂家： | 
ONSEMI |
| 描述： | Single N−Channel Power MOSFET 60V, 27A, 20.3mΩ in u8FL |
| 文件： | 总7页 (文件大小：223K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET - Power, Single
N-Channel, m8FL
60 V, 20.3 mW, 27 A
NTTFS020N06C
Features
www.onsemi.com
• Small Footprint (3.3 x 3.3 mm) for Compact Design
• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
V
R
MAX
I MAX
D
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
(BR)DSS
DS(on)
Compliant
60 V
20.3 mW @ 10 V
27 A
Typical Applications
• Power Tools, Battery Operated Vacuums
• UAV/Drones, Material Handling
• BMS/Storage, Home Automation
N−Channel
D (5 − 8)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
G (4)
V
DSS
Gate−to−Source Voltage
V
GS
20
V
S (1, 2, 3)
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
27
A
C
D
q
JC
MARKING DIAGRAM
T
C
19
(Notes 1, 3)
Steady
State
1
1
Power Dissipation
T
C
P
31
W
A
S
S
S
G
D
D
D
D
D
R
(Note 1)
20NC
AYWWG
G
q
JC
WDFN8
(m8FL)
CASE 511AB
T
C
= 100°C
15
Continuous Drain
Current R
T = 25°C
A
I
D
7
q
JA
T = 100°C
A
5
(Notes 1, 2, 3)
Steady
State
20NC = Specific Device Code
Power Dissipation
T = 25°C
A
P
2.5
1.2
128
W
D
A
Y
= Assembly Location
= Year
= Work Week
R
(Notes 1, 2)
q
JA
T = 100°C
A
WW
G
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
= Pb−Free Package
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
(Note: Microdot may be in either location)
Source Current (Body Diode)
I
25
17
A
S
ORDERING INFORMATION
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 5.7 A)
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
L(pk)
Lead Temperature Soldering Reflow for Sol-
dering Purposes (1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
January, 2020 − Rev. 0
NTTFS020N06C/D
NTTFS020N06C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Value
4.8
Unit
Junction−to−Case − Steady State (Note 4)
Junction−to−Ambient − Steady State (Note 4)
R
°C/W
q
JC
R
59.7
q
JA
2
4. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
60
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
I = 250 mA, referenced to 25°C
D
29
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
T = 25°C
10
mA
DSS
J
V
= 0 V,
GS
DS
V
= 60 V
T = 125°C
J
250
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
V
V
= V , I = 20 mA
2.0
4.0
V
GS(TH)
GS
DS
D
Negative Treshold Temperature
Coefficient
V
/T
I
D
= 20 mA, referenced to 25°C
−7.8
mV/°C
GS(TH)
J
Drain−to−Source On Resistance
Forward Transconductance
Gate−Resistance
R
V
= 10 V, I = 4 A
16.9
12
20.3
mW
S
DS(on)
GS
D
g
FS
V
= 5 V, I = 4 A
DS D
R
T = 25°C
A
1.0
W
G
CHARGES AND CAPACITANCES
Input Capacitance
C
355
260
4.9
pF
nC
iss
V
= 0 V, f = 1 MHz,
DS
GS
Output Capacitance
C
oss
V
= 30 V
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Q
V
GS
= 10 V, V = 30 V, I = 4 A
5.8
G(TOT)
DS
D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Q
1.4
G(TH)
Q
2.3
GS
GD
Q
0.53
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
t
t
6.5
1.4
9.7
4.0
ns
d(on)
t
r
V
GS
I
= 10 V, V = 30 V,
DS
= 4 A, R = 6 W
D
G
Turn−Off Delay Time
Fall Time
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.81
0.67
24
1.2
V
SD
J
V
= 0 V,
= 4 A
GS
S
I
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
12
a
V
GS
= 0 V, dl /dt = 100 A/ms,
S
V
DS
= 30 V, I = 4 A
S
Discharge Time
12
b
Reverse Recovery Charge
Q
12
nC
RR
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NTTFS020N06C
TYPICAL CHARACTERISTICS
70
60
50
40
30
20
35
30
V
= 10 V to 7 V
GS
25
20
6.0 V
15
10
5.0 V
4.5 V
3.6 V
T = −55°C
J
T = 25°C
J
10
0
5
0
T = 125°C
J
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
, DRAIN−TO−SOURCE VOLTAGE (V)
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V
DS
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
22
21
20
19
18
20
19
18
17
T = 25°C
J
T = 25°C
D
J
I
= 4 A
V
GS
= 10 V
16
15
17
16
7.0
7.5
8.0
8.5
9.0
9.5
10
4
8
12
16
20
24
28
32
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.5
2.0
1.5
1.0
100K
10K
1K
V
I
= 10 V
= 4 A
GS
T = 175°C
D
J
T = 150°C
J
T = 125°C
J
100
10
T = 85°C
J
0.5
0
T = 25°C
1
J
0.1
−50 −25
0
25
50
75 100 125 150 175
5
15
25
35
45
55
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTTFS020N06C
TYPICAL CHARACTERISTICS
10K
1K
10
9
8
7
6
5
4
3
2
C
ISS
Q
GD
Q
GS
C
OSS
100
10
1
V = 30 V
DS
V
= 0 V
GS
C
RSS
I = 4 A
T = 25°C
D
J
1
0
T = 25°C
J
f = 1 MHz
0
1
1
10
20
30
40
50
60
0
1
2
3
4
5
6
7
V
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
DS
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100
10
10
V
V
= 10 V
= 30 V
= 4 A
GS
V
= 0 V
GS
DS
I
D
t
d(off)
t
d(on)
1
t
f
1
t
r
T = −55°C
T = 125°C
T = 25°C
J
J
J
0.1
0.1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
, SOURCE−TO−DRAIN VOLTAGE (V)
G
SD
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
T = 25°C
Single Pulse
A
100
10
V
≤ 10 V
GS
10 ms
T
= 25°C
J(initial)
100 ms
10
1
1 ms
T
= 100°C
J(initial)
R
Limit
DS(on)
Thermal Limit
Package Limit
10 ms
100 ms
1 sec
0.1
1
10
, DRAIN−SOURCE VOLTAGE (V)
100
0.000001
0.00001
0.0001
0.001
0.01
V
TIME IN AVALANCHE (s)
DS
Figure 11. Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NTTFS020N06C
TYPICAL CHARACTERISTICS
100
10
50% Duty Cycle
20%
10%
5%
2%
1
1%
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NTTFS020N06CTAG
20NC
m8FL
(Pb−Free)
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
1
SCALE 2:1
2X
ISSUE D
DATE 23 APR 2012
NOTES:
0.20
C
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
D
A
B
E
2X
D1
MILLIMETERS
INCHES
NOM
0.030
−−−
0.012
0.20
C
8
1
7
6
5
4
DIM
A
A1
b
c
MIN
0.70
0.00
0.23
0.15
NOM
0.75
−−−
0.30
0.20
MAX
MIN
MAX
0.031
0.002
0.016
0.010
0.80
0.05
0.40
0.25
0.028
0.000
0.009
0.006
4X
q
E1
0.008
D
3.30 BSC
3.05
2.11
3.30 BSC
3.05
1.60
0.30
0.65 BSC
0.41
0.80
0.43
0.130 BSC
0.120
0.083
0.130 BSC
0.120
0.063
0.012
0.026 BSC
0.016
0.032
0.017
0.005
0.059
−−−
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
2.95
1.98
3.15
2.24
0.116
0.078
0.124
0.088
c
2
3
A1
TOP VIEW
2.95
1.47
0.23
3.15
1.73
0.40
0.116
0.058
0.009
0.124
0.068
0.016
0.10
0.10
C
C
A
C
6X
e
0.012
0.026
0.012
0.002
0.055
0
0.020
0.037
0.022
0.008
0.063
0.30
0.65
0.30
0.06
1.40
0
0.51
0.95
0.56
0.20
1.60
SEATING
PLANE
0.13
1.50
−−−
DETAIL A
SIDE VIEW
DETAIL A
q
12
12
_
_
_
_
8X b
0.10
0.05
C
C
A
B
SOLDERING FOOTPRINT*
8X
e/2
0.42
0.65
4X
L
4X
0.66
PITCH
1
8
4
5
PACKAGE
OUTLINE
K
E2
M
E3
3.60
L1
D2
G
2.30
BOTTOM VIEW
0.57
0.47
0.75
GENERIC
MARKING DIAGRAM*
2.37
3.46
1
XXXXX
DIMENSION: MILLIMETERS
AYWWG
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
G
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON30561E
WDFN8 3.3X3.3, 0.65P
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
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© Semiconductor Components Industries, LLC, 2019
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