NTTFS2D8N04HLTAG [ONSEMI]
Single N−Channel Power MOSFET 40V, 104A, 2.75mΩ;
| 型号： | NTTFS2D8N04HLTAG |
| 厂家： | 
ONSEMI |
| 描述： | Single N−Channel Power MOSFET 40V, 104A, 2.75mΩ |
| 文件： | 总8页 (文件大小：304K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET - Power,
N-Channel, Shielded Gate
40 V, 2.75 mW, 104 A
NTTFS2D8N04HL
General Description
www.onsemi.com
This N−Channel MOSFET is produced using ON Semiconductor’s
advanced MOSFET process that incorporates Shielded Gate
technology. This process has been optimized to minimize on−state
resistance and yet maintain superior switching performance with best
in class soft body diode.
ELECTRICAL CONNECTION
S
S
D
D
D
Features
• Shielded Gate MOSFET Technology
S
• Max r
• Max r
= 2.75 mW at V = 10 V, I = 16 A
GS D
= 4.3 mW at V = 4.5 V, I = 13 A
DS(on)
DS(on)
GS
D
G
D
• Lowers Switching Noise/EMI
• MSL1 Robust Package Design
• 100% UIL Tested
N-Channel MOSFET
• RoHS Compliant
8 7 6 5
D D D D
Applications
• Primary DC−DC MOSFET
• Synchronous Rectifier in DC−DC and AC−DC
• Motor Drive
Pin 1
1 2 3 4
Top
G S S S
Bottom
Pin 1
WDFN8
(3.3x3.3, 0.65 P)
CASE 511DY
MARKING DIAGRAM
04HL
AYWW
04HL
= Device Code
A
= Assembly Location
Y
= Year Code
WW
= Work Week Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2
of this data sheet.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
October, 2019 − Rev. 1
NTTFS2D8N04HL/D
NTTFS2D8N04HL
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Ratings
Unit
V
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
40
20
104
V
I
D
Drain Current
−Continuous
T
T
= 25°C
(Note 5)
(Note 5)
(Note 1a)
(Note 4)
(Note 3)
A
C
C
−Continuous
−Continuous
−Pulsed
= 100°C
66
T = 25°C
A
24
216
E
AS
Single Pulse Avalanche Energy
Power Dissipation
109
mJ
W
P
D
T
= 25°C
C
63
Power Dissipation
T = 25°C
A
(Note 1a)
3.2
T , T
Operating and Storage Junction Temperature Range
−55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
Unit
2
°C/W
R
q
JC
R
(Note 1a)
39
q
JA
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Reel Size
Tape Width
12 mm
Quantity
1500 Units
04HL
NTTFS2D8N04HL
WDFN8 (3.3x3.3)
7’’
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage I = 250 mA, V
= 0 V
GS
40
V
DSS
D
Breakdown Voltage
Temperature Coefficient
I
D
= 250 mA, referenced to 25°C
22
mV/°C
DBVDSS
DTJ
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 32 V, V = 0 V
10
mA
DSS
GSS
DS
GS
I
= +20 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 80 mA
1.2
1.6
2.0
V
GS(th)
GS
DS
D
Gate to Source Threshold Voltage
Temperature Coefficient
= 80 mA, referenced to 25°C
−4.9
mV/°C
DVGS(th)
DTJ
D
r
Static Drain to Source On
Resistance
V
V
= 10 V, I = 16 A
2.4
3.4
2.75
4.3
mW
pF
W
DS(on)
GS
D
= 4.5 V, I = 13 A
GS
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
Output Capacitance
V
DS
= 20 V, V = 0 V,
1960
460
30
ISS
GS
f = 1 MHz
C
OSS
RSS
C
Reverse Transfer Capacitance
Gate Resistance
R
0.8
G
www.onsemi.com
2
NTTFS2D8N04HL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
SWITCHING CHARACTERISTICS
t
Turn*On Delay Time
Rise Time
Turn*Off Delay Time
Fall Time
V
V
= 20 V, I = 16 A,
7.5
16.6
30
ns
d(ON)
DD
D
= 10 V, R
= 2.5 W
GS
GEN
t
rd(ON)
t
d(OFF)
t
f
2.8
32
Q
Q
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V
= 0V to 10 V
= 0V to 4.5 V
nC
g
g
GS
V
15
GS
Q
V
I
= 20 V
5.6
3.4
gs
gd
DD
D
= 16 A
Q
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward
Voltage
V
= 0 V, I = 16 A(Note 2)
0.78
0.63
32.2
27.4
1.2
1.3
V
SD
GS
S
V
GS
= 0 V, I = 16 A(Note 2)
S
t
Reverse Recovery Time
I = 16 A, di/dt = 100 A/ms
F
ns
rr
Q
Reverse Recovery Charge
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R
is determined
CA
q
q
JA
by the user’s board design.
a) 53°C/W when mounted on
b) 125°C/W when mounted on
a minimum pad of 2 oz copper.
2
a 1 in pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. E of 109 mJ is based on starting T = 25_C; L = 0.3 mH, I = 27 A, V = 32 V, V = 10 V. 100% test at L = 0.3 mH, I = 27 A.
AS
J
AS
DD
GS
AS
4. Pulsed I please refer to SOA graph for more details.
D
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal
& electro−mechanical application board design.
www.onsemi.com
3
NTTFS2D8N04HL
TYPICAL CHARACTERISTICS
100
90
80
70
60
50
40
30
100
10 V to 3.5 V
3.2 V
90
80
70
60
50
40
30
20
V
DS
= 10 V
V
GS
= 2.9 V
T = 25°C
J
2.6 V
2.3 V
20
10
0
2.0 V
10
0
T = 125°C
J
T = −55°C
J
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
4.5
4.0
3.5
3.0
2.5
T = 25°C
D
J
T = 25°C
J
I
= 16 A
V
= 4.5 V
= 10 V
GS
V
GS
2.0
1.5
1.5
1.0
3
4
5
6
7
8
9
10
5
10
15
20
25
30
35
40
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
1.8
1.6
1.4
1.2
1.0
1E+05
1E+04
1E+03
V
I
= 10 V
= 16 A
GS
T = 150°C
D
J
T = 125°C
J
T = 85°C
J
1E+02
1E+01
0.8
0.6
−50 −25
0
25
50
75
100
125 150
5
10
15
20
25
30
35
40
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
www.onsemi.com
4
NTTFS2D8N04HL
TYPICAL CHARACTERISTICS
10
9
10K
1K
C
ISS
8
7
6
5
4
3
C
OSS
RSS
100
C
Q
Q
GD
GS
T = 25°C
D
J
10
1
V
= 0 V
GS
2
1
0
I = 16 A
T = 25°C
J
V
DS
= 20 V
f = 1 MHz
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
40
Q , TOTAL GATE CHARGE (nC)
G
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
1000
100
100
10
V
GS
= 0 V
V
V
= 10 V
= 20 V
= 16 A
GS
DS
I
D
t
d(off)
t
f
t
r
T = 125°C
J
t
d(on)
1
10
1
T = 25°C
J
T = −55°C
J
0.1
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.6
0.7
0.8
0.9
1.0
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
100
10
T
= 25°C
J(initial)
10
T
= 25°C
C
10 ms
0.5 ms
1 ms
Single Pulse
≤ 10 V
V
T
= 100°C
GS
J(initial)
1
10 ms
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
1
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
t , TIME IN AVALANCHE (s)
AV
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
www.onsemi.com
5
NTTFS2D8N04HL
TYPICAL CHARACTERISTICS
100
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Transient Thermal Impedance
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511DY
ISSUE A
DATE 21 AUG 2018
GENERIC
MARKING DIAGRAM*
XXXX
AYWW
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year Code
WW = Work Week Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON90827G
WDFN8 3.3x3.3, 0.65P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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