NTTFS5116PL [ONSEMI]
Power MOSFET 60 V, 20 A, 52m; 功率MOSFET的60 V ， 20 A ， 52米？
| 型号： | NTTFS5116PL |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET 60 V, 20 A, 52m |
| 文件： | 总6页 (文件大小：113K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTTFS5116PL
Power MOSFET
−60 V, −20 A, 52 mW
Features
• Low R
DS(on)
• Fast Switching
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• These Devices are Pb−Free and are RoHS Compliant
Applications
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
• Load Switches
• DC Motor Control
• DC−DC Conversion
52 mW @ −10 V
72 mW @ −4.5 V
−60 V
−20 A
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
P−Channel MOSFET
D (5−8)
Parameter
Drain−to−Source Voltage
Symbol Value Unit
V
DSS
−60
20
V
V
A
Gate−to−Source Voltage
V
GS
Continuous Drain
I
D
T = 25°C
−5.7
A
Current R
(Note 1)
q
JA
T = 100°C
A
−4.0
3.2
G (4)
Power Dissipation R
(Note 1)
P
W
A
T = 25°C
T = 100°C
A
q
D
JA
A
1.6
Steady
State
S (1,2,3)
Continuous Drain
I
D
T
C
= 25°C
−20
−14
Current R
(Note 1)
q
JC
T
C
= 100°C
MARKING DIAGRAM
Power Dissipation
(Note 1)
P
D
W
1
T
= 25°C
= 100°C
40
20
C
1
R
S
S
S
G
D
D
D
D
q
JC
T
C
5116
AYWWG
G
WDFN8
(m8FL)
Pulsed Drain Current
t = 10 ms
p
I
−76
A
DM
Operating Junction and Storage Temperature
T ,
stg
−55 to
+175
°C
CASE 511AB
J
T
Source Current (Body Diode)
I
−20
A
S
5116
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
Single Pulse Drain−to−Source Ava- L = 0.1 mH
lanche Energy
E
AS
45
30
mJ
A
I
AS
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
260
°C
L
(Note: Microdot may be in either location)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
†
Device
Package
Shipping
THERMAL RESISTANCE MAXIMUM RATINGS
NTTFS5116PLTAG
WDFN8 1500/Tape & Reel
(Pb−Free)
Parameter
Symbol
Value
Unit
°C/W
Junction−to−Case – Steady
State (Note 1)
R
3.8
q
JC
NTTFS5116PLTWG WDFN8 5000/Tape & Reel
(Pb−Free)
Junction−to−Ambient – Steady
R
47
q
JA
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
State (Note 1)
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces.
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
November, 2011 − Rev. 1
NTTFS5116PL/D
NTTFS5116PL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = −250 mA
−60
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
69.7
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
T = 25°C
−1.0
−100
100
mA
DSS
J
V
DS
= 0 V,
= −60 V
GS
V
T = 125°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
I
V
= 0 V, V
=
20 V
nA
GSS
DS
GS
V
V
GS
= V , I = −250 mA
−1
−3
V
GS(TH)
DS
D
Negative Threshold Temperature
Coefficient
V
/T
−6.2
mV/°C
GS(TH)
J
Drain−to−Source On Resistance
R
V
= −10 V
= −4.5 V
I
= −6 A
37
51
11
52
72
mW
S
DS(on)
GS
D
V
GS
I
= −4.4 A
D
Forward Transconductance
g
FS
V
= −15 V, I = −6 A
DS D
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
C
1258
127
84
25
14
1
pF
iss
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V
= 0 V, f = 1.0 MHz, V = −30 V
DS
oss
GS
C
rss
Q
V
= −10 V, V = −48 V, I = −5 A
nC
nC
G(TOT)
GS
DS
D
V
GS
= −4.5 V, V = −48 V, I = −5 A
DS D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
G(TH)
Q
4
GS
GD
GP
V
GS
= −4.5 V, V = −48 V, I = −5 A
DS
D
Q
V
7
3.1
5.3
V
Gate Resistance
R
W
G
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
t
15
58
30
37
ns
d(on)
t
r
V
GS
= −4.5 V, V = −48 V,
DS
I
= −5 A, R = 6 W
D
G
Turn−Off Delay Time
Fall Time
t
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
−0.79
−0.64
20
−1.2
V
SD
J
V
S
= 0 V,
GS
I
= −5 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
15
a
V
= 0 V, d /d = −100 A/ms,
IS t
GS
I
S
= −5 A
Discharge Time
5
b
Reverse Recovery Charge
Q
19
nC
RR
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTTFS5116PL
TYPICAL CHARACTERISTICS
40
30
20
10
0
40
V
≥ 10 V
DS
V
GS
= 10 V
V
= 4.5 V
GS
30
20
10
0
V
= 4 V
GS
T = 25°C
J
V
GS
= 3.5 V
T = 125°C
J
V
= 3 V
GS
T = −55°C
J
0
1
2
3
4
5
2
3
4
5
6
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.075
0.065
0.055
0.045
0.035
0.080
0.070
0.060
0.050
0.040
0.030
T = 25°C
I
= −6 A
J
D
T = 25°C
J
V
GS
= 4.5 V
V
= 10 V
15
GS
2
4
6
8
10
5
10
20
25
30
35
40
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10,000
1,000
100
I
V
= −4.4 A
V
GS
= 0 V
D
= 4.5 V
GS
T = 150°C
J
T = 125°C
J
−50 −25
0
25
50
75
100 125 150 175
10
20
30
40
50
60
T , JUNCTION TEMPERATURE (°C)
J
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTTFS5116PL
TYPICAL CHARACTERISTICS
10
1800
1600
1400
1200
1000
800
600
400
200
0
Q
T
V
= 0 V
GS
T = 25°C
J
8
6
4
2
0
C
iss
Q
Q
gd
gs
V
DS
= −48 V
I
D
= −5 A
C
oss
T = 25°C
J
C
rss
0
10
20
30
40
50
60
0
5
10
15
20
25
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
40
30
20
10
0
1000
100
10
V
= −48 V
= −5 A
= −4.5 V
DD
V
= 0 V
GS
I
D
T = 25°C
J
V
GS
t
f
t
r
t
d(off)
t
d(on)
1
1
0.5
0.6
0.7
0.8
0.9
1.0
1.1
10
R , GATE RESISTANCE (W)
100
−V , SOURCE−TO−DRAIN VOLTAGE (V)
SD
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
10
1
45
30
15
0
1 ms
10 ms
100 ms
10 ms
V
= −10 V
GS
Single Pulse
= 25°C
T
C
dc
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
0.1
1
10
100
25
50
75
100
125
150
175
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
T , STARTING JUNCTION TEMPERATURE (°C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
NTTFS5116PL
TYPICAL CHARACTERISTICS
100
10
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
1
0.1
0.01
Single Pulse
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
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5
NTTFS5116PL
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE C
2X
NOTES:
0.20
C
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
D
A
B
E
2X
D1
MILLIMETERS
INCHES
NOM
0.030 0.031
0.20
C
8
1
7
6
5
4
DIM
A
A1
b
c
MIN
0.70
0.00
0.23
0.15
NOM
0.75
MAX
MIN
0.028
0.000
0.009
0.006
MAX
0.80
0.05
0.40
0.25
0.002
0.016
***
***
4X
q
0.012
0.30
E1
0.008 0.010
0.130 BSC
0.120
0.20
3.30 BSC
3.05
D
0.116
0.078
D1
D2
E
3.15
2.24
0.124
0.088
2.95
1.98
c
2
3
A1
0.083
0.130 BSC
0.120
2.11
3.30 BSC
3.05
TOP VIEW
2.95
1.47
0.23
3.15
1.73
0.40
0.124
0.068
E1
E2
E3
e
G
K
L
L1
M
0.116
0.058
0.009
0.063
1.60
0.30
0.10
0.10
C
C
0.012 0.016
0.026 BSC
0.016
0.65 BSC
0.41
A
C
6X
e
0.012
0.025
0.012
0.002
0.055
0.020
0.30
0.64
0.30
0.06
1.40
0.51
SEATING
PLANE
*** ***
*** ***
0.017
0.022
0.43
0.13
1.50
0.56
0.20
1.60
0.005 0.008
0.059 0.063
DETAIL A
SIDE VIEW
DETAIL A
0
°
*** 12
0
***
12
°
q
°
°
8X
0.10ꢀꢀC ꢀAꢁꢂꢃB
SOLDERING FOOTPRINT*
C
0.05
8X
e/2
0.42
0.65
4X
L
4X
0.66
PITCH
14
PACKAGE
OUTLINE
K
E2
M
E3
8
5
3.60
L1
D2
BOTTOM VIEW
G
2.30
0.57
0.47
0.75
2.37
3.46
DIMENSION: MILLIMETERS
*For additional information on our Pb
*Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting T
echniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
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NTTFS5116PL/D
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