NTTYS009N08HLTWG [ONSEMI]
MOSFET - Power, Single, N-Channel, 80 V, 9 mΩ, 58 A;型号: | NTTYS009N08HLTWG |
厂家: | ONSEMI |
描述: | MOSFET - Power, Single, N-Channel, 80 V, 9 mΩ, 58 A |
文件: | 总7页 (文件大小:337K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
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MOSFET - Power, Single
N-Channel
80 V, 9 mW, 58 A
NTTYS009N08HL
Features
• Small Footprint (3.3 x 3.3 mm) for Compact Design
www.onsemi.com
• Low R
to Minimize Conduction Losses
DS(on)
• Low Capacitance to Minimize Driver Losses
• These Devices are Pb−Free and are RoHS Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
9 mW @ 10 V
80 V
58 A
Parameter
Drain−to−Source Voltage
Symbol
Value
80
Unit
V
10.9 mW @ 4.5 V
V
DSS
Gate−to−Source Voltage
V
20
V
GS
N−Channel
D (5 − 8)
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
58
A
C
D
q
JC
T
C
41
(Notes 1, 2, 3, 4)
Steady
State
Power Dissipation
T
C
P
73
W
A
D
R
(Notes 1, 2, 3)
q
JC
T
C
= 100°C
36
G (4)
Continuous Drain
Current R
T = 25°C
A
I
12
D
q
JA
T = 100°C
A
8
S (1, 2, 3)
(Notes 1, 3, 4)
Steady
State
Power Dissipation
T = 25°C
A
P
3.2
1.6
590
W
D
R
(Notes 1, 3)
q
JA
T = 100°C
A
Pulsed Drain Current
T
C
= 25°C, t = 10 ms
I
DM
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
J
stg
LFPAK8
3.3x3.3
CASE 760AD
+175
Source Current (Body Diode)
I
S
60
35
A
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 26.4 A, L = 0.1 mH)
L(pk)
MARKING DIAGRAM
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
009N
08HL
AWLYW
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
009N08HL = Specific Device Code
= Assembly Location
WL = Wafer Lot
A
Parameter
Symbol
Value
2.0
Unit
Junction−to−Case − Steady State (Note 3)
Junction−to−Ambient − Steady State (Note 3)
R
°C/W
q
JC
Y
= Year
W
= Work Week
R
46
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which substantially
less than 100% of the heat flows to single case surface.
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
May, 2021 − Rev. 0
NTTYS009N08HL/D
NTTYS009N08HL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
80
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
53.4
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
T = 25°C
10
mA
nA
DSS
J
V
= 0 V,
GS
DS
V
= 80 V
T = 125°C
J
250
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
Drain−to−Source On Resistance
I
V
= 0 V, V = 20 V
DS GS
GSS
R
V
= 10 V, I = 10 A
7.1
8.9
8.6
11
mW
DS(on)
GS
GS
GS
D
V
= 4.5 V, I = 10 A
D
Gate Threshold Voltage
V
V
= V , I = 70 mA
1.2
1.6
2.0
V
GS(TH)
DS
D
Gate Threshold Voltage Temperature
Coefficient
V
/T
−5.2
mV/°C
GS(TH)
J
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
V
= 5 V, I = 10 A
64.1
S
FS
DS
D
C
1402
187
10.5
2
pF
pF
pF
nC
iss
rss
oss
V
GS
= 0 V, f = 1.0 MHz
Reverse Transfer Capacitance
Output Capacitance
C
V
DS
= 40 V
C
Threshold Gate Charge
Total Gate Charge
Q
V
V
= 10 V, V = 40 V, I = 10 A
DS D
G(TH)
GS
Q
24
G(TOT)
Gate−to−Source Charge
Gate−to−Drain Charge
Q
3.5
4.3
= 10 V, V = 40 V, I = 10 A
GS
GS
DS
D
Q
GD
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Turn−Off Delay Time
Rise Time
t
11
29
10
9
ns
d(on)
t
d(off)
V
= 6 V, V = 64 V,
DS
GS
D
I
= 10 A, R = 6 mW
G
t
r
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.8
0.7
39
20
20
27
1.2
V
SD
J
V
S
= 0 V,
GS
I
= 10 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
a
V
GS
= 0 V, dl/dt = 100 A/ms,
I
S
= 10 A
Discharge Time
b
Reverse Recovery Charge
Q
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NTTYS009N08HL
TYPICAL CHARACTERISTICS
120
100
80
120
4.0 V
V
DS
= 5 V
100
80
V
GS
= 4.5 V to 10 V
3.2 V
2.8 V
60
60
40
40
T = 25°C
J
20
0
20
0
T = 125°C
J
T = −55°C
J
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
20
18
16
50
45
40
35
30
25
20
15
T = 25°C
J
T = 25°C
D
J
I
= 10 A
14
12
V
= 4.5 V
= 10 V
GS
10
8
V
GS
6
10
5
4
2
0
0
2
3
4
5
6
7
8
9
10
10 20
30
40
50
60
70
80
90 100
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
100K
10K
1K
4
T = 150°C
T = 125°C
J
J
V
I
= 10 V
= 10 A
GS
D
3
2
T = 85°C
J
100
10
T = 25°C
J
1
0.1
1
0
0.01
0.001
5
15
25
35
45
55
65
75
−50 −25
0
25
50
75 100 125 150
175
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTTYS009N08HL
TYPICAL CHARACTERISTICS
10
9
10,000
1000
100
C
ISS
8
7
6
5
4
3
2
C
OSS
Q
5
Q
GD
GS
C
RSS
10
1
V
= 40 V
DS
V
= 0 V
GS
T = 25°C
J
T = 25°C
J
1
0
I
D
= 10 A
f = 1 MHz
0
10
20
30
40
50
60
70
80
0
10
15
20
25
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
1000
100
V
GS
= 0 V
100
10
T = 175°C
J
T = 150°C
J
t
T = 125°C
J
d(off)
t
d(on)
T = 25°C
J
10
1
1
V
V
= 6 V
= 64 V
= 10 A
GS
t
r
DS
I
D
t
f
T = −55°C
J
0.1
1
10
R , GATE RESISTANCE (W)
100
0.3 0.5
0.7
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.9
1.1
1.3
1.5
1.7
1.9
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
10 ms
100
10
T (initial) = 25°C
J
100 ms
10
T
V
= 25°C
C
500 ms
T (initial) = 100°C
J
≤ 10 V
GS
Single Pulse
1
R
Limit
DS(on)
1 ms
10 ms
Thermal Limit
Package Limit
100 ms(DC)
1
0.000001 0.00001 0.0001
0.1
0.001
0.01
0.1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Curent vs. Time in
Avalanche
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4
NTTYS009N08HL
TYPICAL CHARACTERISTICS
10
1
50% Duty Cycle
20%
10%
5%
0.1
2%
1%
0.01
Single Pulse
0.000001
0.001
0.00001
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
LFPAK8
Shipping
NTTYS009N08HLTWG
009N
08HL
3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
NTTYS009N08HL
PACKAGE DIMENSIONS
LFPAK8 3.3x3.3, 0.65P
CASE 760AD
ISSUE E
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
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