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NTZS3151PT1H [ONSEMI]

TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal;
NTZS3151PT1H
型号： NTZS3151PT1H
厂家： ONSEMI    ONSEMI
描述：

TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal
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NTZS3151P  
Small Signal MOSFET  
−20 V, −950 mA, P−Channel SOT−563  
Features  
• Low R  
Improving System Efficiency  
• Low Threshold Voltage  
http://onsemi.com  
DS(on)  
V
R
DS(on)  
Typ  
I Max  
D
• Small Footprint 1.6 x 1.6 mm  
(BR)DSS  
120 mW @ −4.5 V  
144 mW @ −2.5 V  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
−20 V  
−950 mA  
195 mW @ −1.8 V  
Applications  
P−Channel MOSFET  
• Load/Power Switches  
D
• Battery Management  
• Cell Phones, Digital Cameras, PDAs, Pagers, etc.  
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)  
J
Parameter  
Drain−to−Source Voltage  
Symbol Value Unit  
V
DSS  
−20  
8.0  
V
V
S
Gate−to−Source Voltage  
V
GS  
MARKING  
DIAGRAM  
Continuous Drain Current  
(Note 1)  
T = 25°C  
−860  
−690  
170  
mA  
A
6
Steady  
State  
I
D
T = 70°C  
A
1
TX M G  
Power Dissipation  
(Note 1)  
Steady State  
P
mW  
mA  
SOT−563−6  
CASE 463A  
D
G
Continuous Drain Current  
(Note 1)  
T = 25°C  
A
−950  
−760  
210  
TX  
M
G
= Specific Device Code  
= Date Code  
= Pb−Free Package  
t v 5 s  
I
D
T = 70°C  
A
Power Dissipation  
(Note 1)  
t v 5 s  
P
mW  
D
(Note: Microdot may be in either location)  
Pulsed Drain Current  
t = 10 ms  
I
−4.0  
A
p
DM  
PINOUT: SOT−563  
Operating Junction and Storage Temperature  
T ,  
−55 to  
150  
°C  
J
T
STG  
D
D
1
2
3
6
5
D
D
Source Current (Body Diode)  
I
−360  
mA  
S
Lead Temperature for Soldering Purposes  
T
260  
°C  
L
(1/8″ from case for 10 s)  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Max  
720  
600  
Unit  
4
S
G
Junction−to−Ambient – Steady State (Note 1)  
Junction−to−Ambient – t v 5 s (Note 1)  
°C/W  
R
q
JA  
R
q
JA  
Top View  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surface−mounted on FR4 board using 1 in. sq. pad size  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 4 of this data sheet.  
(Cu. area = 1.127 in. sq. [1 oz.] including traces).  
©
Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
January, 2013 − Rev. 3  
NTZS3151P/D  
 
NTZS3151P  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Drain−to−Source Breakdown Voltage  
V
V
V
= 0 V, I = −250 mA  
−20  
V
(BR)DSS  
GS  
D
Drain−to−Source Breakdown Voltage  
V
/T  
−13  
mV/°C  
(BR)DSS  
J
Temperature Coefficient  
Zero Gate Voltage Drain Current  
= 0 V  
T = 25°C  
J
−1.0  
−5.0  
mA  
GS  
I
DSS  
V
DS  
= −20 V  
T = 125°C  
J
Gate−to−Source Leakage Current  
ON CHARACTERISTICS (Note 2)  
Gate Threshold Voltage  
I
V
= 0 V, V = "8.0 V  
"100  
nA  
GSS  
DS  
GS  
V
V
= V , I = −250 mA  
−0.45  
−1.0  
V
GS(TH)  
GS  
DS  
D
Negative Threshold  
V
/T  
2.4  
mV/°C  
GS(TH)  
J
Temperature Coefficient  
Drain−to−Source On Resistance  
V
V
V
V
= −4.5 V, I = −950 mA  
120  
112  
144  
195  
3.1  
150  
142  
200  
240  
mW  
GS  
GS  
GS  
GS  
D
= −4.5 V, I = −770 mA  
D
R
DS(on)  
= −2.5 V, I = −670 mA  
D
= −1.8 V, I = −200 mA  
D
Forward Transconductance  
CHARGES AND CAPACITANCES  
Input Capacitance  
g
FS  
V
= −10 V, I = −810 mA  
S
DS  
D
C
458  
61  
pF  
ISS  
V
= 0 V, f = 1.0 MHz,  
DS  
GS  
Output Capacitance  
C
C
OSS  
RSS  
V
= −16 V  
Reverse Transfer Capacitance  
Total Gate Charge  
38  
Q
5.6  
0.6  
0.9  
1.2  
nC  
ns  
G(TOT)  
V
V
= −4.5 V, V = −10 V;  
DS  
GS  
Threshold Gate Charge  
Gate−to−Source Charge  
Gate−to−Drain Charge  
SWITCHING CHARACTERISTICS (Note 3)  
Turn−On Delay Time  
Q
G(TH)  
I
D
= −770 mA  
Q
GS  
GD  
Q
t
5.0  
12  
d(ON)  
Rise Time  
t
r
= −4.5 V, V = −10 V,  
GS  
I
DD  
= −950 mA, R = 6.0 W  
D
G
Turn−Off Delay Time  
t
23.7  
18  
d(OFF)  
Fall Time  
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS  
Forward Diode Voltage  
T = 25°C  
−0.64  
−0.5  
10.5  
−0.9  
V
J
V
S
= 0 V,  
GS  
V
SD  
I
= −360 mA  
T = 125°C  
J
Reverse Recovery Time  
t
V
= 0 V, dI /dt = 100 A/ms,  
ns  
RR  
GS  
S
I
S
= −360 mA  
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.  
3. Switching characteristics are independent of operating junction temperatures.  
http://onsemi.com  
2
 
NTZS3151P  
TYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted)  
J
4
3.5  
3
4
V
DS  
≥ −10 V  
−1.8 V  
−1.6 V  
3.5  
3
V
V
= −3 V  
= −2 V  
GS  
T = 25°C  
J
GS  
2.5  
2.5  
2
2
1.5  
1
−1.4 V  
1.5  
1
T = −55°C  
J
−1.2 V  
−1 V  
4.5  
0.5  
0
0.5  
0
25°C  
125°C  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
5
0
0.5  
1
1.5  
2
2.5  
3
−V , GATE−TO−SOURCE VOLTAGE (VOLTS)  
GS  
−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)  
DS  
Figure 1. On−Region Characteristics  
Figure 2. Transfer Characteristics  
0.3  
0.2  
0.3  
T = 25°C  
J
V
GS  
= −4.5 V  
V
GS  
= −1.8 V  
0.2  
V
V
= −2.5 V  
T = 125°C  
J
GS  
= −4.5 V  
GS  
0.1  
0
0.1  
0
T = 25°C  
J
T = −55°C  
J
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
0
1
2
3
4
−I DRAIN CURRENT (AMPS)  
D,  
−I DRAIN CURRENT (AMPS)  
D,  
Figure 4. On−Resistance vs. Drain Current and  
Figure 3. On−Resistance vs. Drain Current and  
Gate Voltage  
Temperature  
1.8  
10000  
1000  
I
V
= −0.95 A  
= −4.5 V  
V
GS  
= 0 V  
D
T = 150°C  
J
GS  
1.6  
1.4  
1.2  
T = 125°C  
J
1
0.8  
0.6  
100  
−50 −25  
0
25  
50  
75  
100  
125 150  
0
5
10  
15  
20  
T , JUNCTION TEMPERATURE (°C)  
J
−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)  
DS  
Figure 5. On−Resistance Variation with  
Figure 6. Drain−to−Source Leakage Current  
Temperature  
vs. Voltage  
http://onsemi.com  
3
NTZS3151P  
TYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted)  
J
1000  
900  
800  
700  
600  
500  
400  
300  
5
30  
25  
20  
15  
V
= 0 V  
V
= 0 V  
DS  
GS  
T = 25°C  
J
QT  
C
RSS  
4
−V  
GS  
3
2
C
ISS  
Q
Q
GD  
GS  
10  
5
1
0
200  
100  
0
C
OSS  
I
= −0.77 A  
T = 25°C  
−V  
DS  
D
J
0
10  
5
0
5
10  
15  
20  
25  
0
1
2
3
4
5
6
−V  
GS  
−V  
DS  
Q , TOTAL GATE CHARGE (nC)  
G
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)  
Figure 7. Capacitance Variation  
Figure 8. Gate−to−Source and  
Drain−to−Source Voltage vs. Total Charge  
1000  
1.2  
V
I
= −25 V  
= −0.95 A  
= −4.5 V  
V
GS  
= 0 V  
DD  
T = 25°C  
J
D
1.0  
0.8  
0.6  
0.4  
V
GS  
100  
t
d(off)  
t
r
f
t
10  
1
t
d(on)  
0.2  
0
1
10  
R , GATE RESISTANCE (W)  
100  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8 0.9  
−V , SOURCE−TO−DRAIN VOLTAGE (VOLTS)  
SD  
G
Figure 9. Resistive Switching Time Variation  
vs. Gate Resistance  
Figure 10. Diode Forward Voltage vs. Current  
ORDERING INFORMATION  
Device  
Package  
Shipping  
NTZS3151PT1G  
SOT−563  
(Pb−Free)  
4000 / Tape & Reel  
NTZS3151PT1H  
NTZS3151PT5G  
SOT−563  
(Pb−Free)  
4000 / Tape & Reel  
8000 / Tape & Reel  
SOT−563  
(Pb−Free)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Spe-  
cifications Brochure, BRD8011/D.  
http://onsemi.com  
4
NTZS3151P  
PACKAGE DIMENSIONS  
SOT−563, 6 LEAD  
CASE 463A  
ISSUE F  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: MILLIMETERS  
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD  
FINISH THICKNESS. MINIMUM LEAD THICKNESS  
IS THE MINIMUM THICKNESS OF BASE MATERIAL.  
D
−X−  
A
L
6
5
2
4
3
MILLIMETERS  
DIM MIN NOM MAX MIN  
INCHES  
NOM MAX  
E
−Y−  
H
E
A
b
C
D
E
e
0.50  
0.17  
0.08  
1.50  
1.10  
0.55  
0.22  
0.12  
1.60  
1.20  
0.5 BSC  
0.20  
0.60 0.020 0.021 0.023  
0.27 0.007 0.009 0.011  
0.18 0.003 0.005 0.007  
1.70 0.059 0.062 0.066  
1.30 0.043 0.047 0.051  
0.02 BSC  
1
b 56 PL  
C
e
M
0.08 (0.003)  
X Y  
L
0.10  
1.50  
0.30 0.004 0.008 0.012  
1.70 0.059 0.062 0.066  
H
E
1.60  
SOLDERING FOOTPRINT*  
0.3  
0.0118  
0.45  
0.0177  
1.0  
0.0394  
1.35  
0.0531  
0.5  
0.5  
0.0197 0.0197  
mm  
inches  
ǒ
Ǔ
SCALE 20:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,  
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC  
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any  
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without  
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications  
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC  
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for  
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where  
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and  
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,  
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture  
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81−3−5817−1050  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
NTSZ3151P/D  

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