NVB150N65S3F [ONSEMI]
Single N-Channel Power MOSFET SUPERFET® III, FRFET, 650 V , 24 A, 150 mΩ, D2PAK;
| 型号： | NVB150N65S3F |
| 厂家： | 
ONSEMI |
| 描述： | Single N-Channel Power MOSFET SUPERFET® III, FRFET, 650 V , 24 A, 150 mΩ, D2PAK |
| 文件： | 总9页 (文件大小：226K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
N-Channel, D2PAK
650 V, 150 mW, 24 A
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
650 V
150 mW @ 10 V
24 A
D
NVB150N65S3F
Description
®
SUPERFET III MOSFET is onsemi’s brand−new high voltage
G
super−junction (SJ) MOSFET family that is utilizing charge balance
technology for outstanding low on−resistance and lower gate charge
performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate.
S
N−CHANNEL MOSFET
Consequently, SUPERFET III MOSFET is very suitable for the
various power system for miniaturization and higher efficiency.
SUPERFET III FRFET MOSFET’s optimized reverse recovery
®
D
performance of body diode can remove additional component and
improve system reliability.
G
S
2
D PAK−3
Features
TO−263
CASE 418AJ
• 700 V @ T = 150°C
J
• Typ. R
= 114 mW
DS(on)
• Ultra Low Gate Charge (Typ. Q = 43 nC)
g
MARKING DIAGRAM
• Low Effective Output Capacitance (Typ. C
• 100% Avalanche Tested
= 385 pF)
oss(eff.)
• Qualified with AEC−Q101
&Z&3&K
NVB
150N65S3F
• These Devices are Pb−Free and are RoHS Compliant
Typical Applications
• Automotive On Board Charger
• Automotive DC/DC Converter for HEV
&Z
&3
&K
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
NVB150N65S3F = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of
this data sheet.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
December, 2021 − Rev. 1
NVB150N65S3F/D
NVB150N65S3F
Table 1. ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise stated)
C
Symbol
V
Parameter
Value
650
Unit
V
Drain−to−Source Voltage
Gate−to−Source Voltage
DSS
V
GS
− DC
30
V
− AC (f > 1 Hz)
30
I
D
Drain Current
− Continuous (T = 25°C)
24
A
C
− Continuous (T = 100°C)
15.2
60
C
I
Drain Current
− Pulsed (Note 1)
A
mJ
A
DM
E
Single Pulse Avalanche Energy (Note 2)
Avalanche Current
275
AS
AS
I
3.2
E
Repeated Avalanche Energy (Note 1)
MOSFET dv/dt
1.92
100
mJ
V/ns
AR
dv/dt
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
50
P
TC = 25°C
192
W
W/°C
°C
D
− Derate Above 25°C
1.54
−55 to 150
300
T , T
J
Operating Junction and Storage Temperature
stg
T
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 Seconds
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse*width limited by maximum junction temperature.
2. IAS = 3.2 A, RG = 25 W, starting T = 25°C.
J
3. ISD ≤ 12 A, di/dt ≤ 200 A/_s, V ≤ 400 V, starting T = 25°C.
DD
C
Table 2. THERMAL RESISTANCE RATINGS
Symbol
Parameter
Max
0.65
40
Unit
Thermal Resistance, Junction−to−Case, Max.
Thermal Resistance, Junction−to−Ambient, Max.
°C/W
R
q
JC
R
q
JA
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2
NVB150N65S3F
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain−to−Source Breakdown Voltage
V
V
= 0 V, I = 1 mA, T = 25°C
650
700
−
−
−
−
−
V
V
DSS
GS
D
J
= 0 V, I = 10 mA, T = 150°C
GS
D
J
DBV
/DT
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
I = 20 mA, Referenced to 25°C
D
0.61
−
−
V/°C
mA
mA
nA
DSS
J
I
V
V
V
= 650 V, V = 0 V
−
10
−
DSS
DS
DS
= 520 V, T = 125°C
−
128
−
DS
GS
C
I
Gate−to−Body Leakage Current
= 0 V, I = 1 mA, T = 25°C
−
100
GSS
D
J
ON CHARACTERISTICS
V
Drain−to−Source Breakdown Voltage
Static Drain−to−Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
= V , I = 0.54 mA
3.0
−
−
5.0
150
−
V
mW
S
GS(th)
DS(on)
DS
D
R
= 10 V, I = 12 A
114
14
D
g
FS
= 20 V, I = 12 A
−
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 400 V, V = 0 V, f = 1 MHz
−
−
−
−
−
−
−
−
1999
40.1
385
72
−
−
−
−
−
−
−
−
pF
pF
pF
pF
nC
nC
nC
W
iss
DS
GS
C
Output Capacitance
oss
C
Effective Output Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10 V
Gate−to−Source Gate Charge
Gate−to−Drain “Miller” Charge
Equivalent Series Resistance
V
V
= 0 to 400 V, V = 0 V
GS
oss(eff.)
DS
C
= 0 to 400 V, V = 0 V
GS
oss(er.)
DS
Q
V
DS
V
GS
= 400 V, I = 12 A,
43
g(total)
D
= 10 V (Note 4)
Q
Q
13
gs
17
gd
ESR
F = 1 MHz
5
SWITCHING CHARACTERISTICS, V = 10 V
GS
t
Turn-On Delay Time
Rise Time
V
V
= 400 V, I = 12 A,
−
−
−
−
21
13
53
3
−
−
−
−
ns
ns
ns
ns
d(on)
DD
GS
D
= 10 V, R = 4.7 W
G
t
r
(Note 4)
t
Turn-Off Delay Time
Fall Time
d(off)
t
f
SOURCE−DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Source−to−Drain Diode Forward Current
Maximum Pulsed Source−to−Drain Diode Forward Current
−
−
−
−
−
−
−
24
60
1.3
−
A
A
S
I
SM
V
SD
Source−to−Drain Diode Forward Voltage
Reverse−Recovery Time
V
V
= 0 V, I = 12 A
−
V
GS
SD
t
= 0 V, I = 12 A,
88
300
ns
nC
rr
GS
SD
dI /dt = 100 A/ms
F
Q
Reverse−Recovery Charge
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
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3
NVB150N65S3F
TYPICAL CHARACTERISTICS
100
100
V
GS
= 10 V
V
GS
= 10 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
10
10
6.0 V
8.0 V
7.0 V
6.5 V
5.5 V
1
1
0.1
1
10
0
2
20
V
DS
, DRAIN−SOURCE VOLTAGE (V)
V
DS
, DRAIN−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
255C
Figure 2. On−Region Characteristics
1505C
100
0.3
0.2
V
= 20 V
DS
V
GS
= 10 V
10
T = 25°C
J
0.1
0
V
= 20 V
GS
T = 150°C
T = −55°C
J
J
1
2
3
4
5
6
7
8
0
10
20
30
40
50
60
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. Transfer Characteristics
Figure 4. On−Resistance Variation vs. Drain
Current and Gate Voltage
100K
10K
1K
100
10
V
= 0 V
GS
C
iss
T = 150°C
J
1
100
10
C
oss
T = 25°C
J
0.1
C
rss
0.01
1
V
GS
= 0 V
f = 1 MHz
T = −55°C
J
0.001
0.1
0
0.5
1.0
1.5
2.0
0.1
1
10
100
1K
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. Body Diode Forward Voltage
Figure 6. Capacitance Characteristics
Variation vs. Source Current and Temperature
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4
NVB150N65S3F
TYPICAL CHARACTERISTICS
10
8
1.2
V
DS
= 130 V
V = 0 V
GS
I
D
= 12 A
I
D
= 10 mA
V
= 400 V
DS
1.1
1.0
6
4
0.9
0.8
2
0
0
10
20
30
40
50
175
150
−75
−25
25
75
125
175
Q , TOTAL GATE CHARGE (nC)
T , JUNCTION TEMPERATURE (°C)
J
G
Figure 7. Gate Charge Characteristics
Figure 8. Breakdown Voltage Variation vs.
Temperature
100
10
3.0
2.5
2.0
1.5
1.0
I
V
= 12 A
= 10 V
D
10 ms
GS
100 ms
Operation in this
area is limited
1 ms
1
0.1
10 ms
by R
DS(on)
T
= 25°C
T = 150°C
Single Pulse
C
0.5
0
J
0.01
−75
−25
25
75
125
1
10
100
1000
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−SOURCE VOLTAGE (V)
Figure 9. On−Resistance Variation vs.
Figure 10. Maximum Safe Operating Area
Temperature
24
20
16
12
8
12
10
8
6
4
2
0
4
0
25
50
75
100
125
0
100
200
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
300
400
500
600 700
T , CASE TEMPERATURE (°C)
V
C
Figure 11. Maximum Drain Current vs. Case
Temperature
Figure 12. EOSS vs. Drain−to−Source Voltage
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5
NVB150N65S3F
TYPICAL CHARACTERISTICS
1.2
1.0
0.8
0.6
0.4
1000
100
Current Limited Max
0.2
0
10
0
25
50
75
100
125
150
0.00001 0.0001 0.001
0.01
0.1
1
T , CASE TEMPERATURE (°C)
C
t, RECTANGULAR PULSE (s)
Figure 13. Normalized Power Dissipation vs.
Case Temperature
Figure 14. Peak Current Capability
500
400
1.4
1.2
1.0
0.8
I
D
= 12 A
I
D
= 0.54 mA
T = 150°C
J
300
200
T = 25°C
J
0.6
0.4
100
0
5.5
7.0
8.5
10
−80
−40
0
40
80
120
160
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
J
Figure 15. RDS(on) vs. Gate Voltage
Figure 16. Normalized Gate Threshold Voltage
vs. Temperature
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Notes:
P
DM
Z
q
(t) = r(t) x R
q
JC
JC
0.01
0.01
R
= 0.65°C/W
q
JC
t
Peak T = P
Duty Cycle, D = t /t
x Z
(t) + T
JC C
1
q
J
DM
Single Pulse
0.00001
t
1
2
2
0.001
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 17. Transient Thermal Response
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6
NVB150N65S3F
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
Quantity
2
†
NVB150N65S3F
NVB150N65S3F
D PAK
Tape & Reel
330 mm
24 mm
800 Units
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
ISSUE F
DATE 11 MAR 2021
SCALE 1:1
XXXXXX = Specific Device Code
A
= Assembly Location
WL
Y
= Wafer Lot
= Year
GENERIC MARKING DIAGRAMS*
WW
W
M
G
AKA
= Work Week
= Week Code (SSG)
= Month Code (SSG)
= Pb−Free Package
= Polarity Indicator
XX
AYWW
XXXXXXXXG
AKA
XXXXXXXXG
AYWW
XXXXXX
XXYMW
XXXXXXXXX
AWLYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
IC
Standard
Rectifier
SSG
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON56370E
D2PAK−3 (TO−263, 3−LEAD)
PAGE 1 OF 1
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