NVCW4LS001N08HA [ONSEMI]
Power MOSFET, N-Channel, 80 V, 1.0 mΩ, Bare Die;
| 型号： | NVCW4LS001N08HA |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, N-Channel, 80 V, 1.0 mΩ, Bare Die |
| 文件： | 总6页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DIE DATA SHEET
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MOSFET – Power,
N-Channel
80 V, 1.0 mW
NVCW4LS001N08HA
Features
• Typical R
• Typical Q
= 0.82 mW at V = 10 V
GS
DS(on)
= 166 nC at V = 10 V
g(tot)
GS
• AEC−Q101 Qualified
• RoHS Compliant
ORDERING INFORMATION
Device
Package
NVCW4LS001N08HA
Unsawn Wafer on Ring
Frame
DIMENSION (mm)
Die Size
6604 x 4445
80
Scribe Width
RECOMMENDED STORAGE CONDITIONS
Source Attach Area
Gate Attach Area
Die Thickness
(6362 x 2059) x 2
330 x 600
101.6
Temperature
RH
22 to 28°C
40% to 66%
Gate and Source : AlCu
Drain : Ti−Ni−Ag (back side of die)
Passivation : Polyimide
Wafer Diameter : 8 inch
Wafer Unsawn on UV Tape
Bad dice identified in Inking
Gross Die Count : 806
ELECTRICAL CHARACTERISTICS
The Chip is 100% Probed to Meet the Conditions and Limits Specified at T = 25°C
J
Symbol
Parameter
Condition
= 250 mA, V = 0 V
Min.
Typ.
−
Max.
−
Unit
V
BV
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Bare Die Drain to Source On Resistance
I
80
−
DSS
D
GS
I
V
V
V
= 80 V, V = 0 V
−
10
mA
nA
V
DSS
GSS
DS
GS
GS
GS
I
= 20 V, V = 0 V
−
−
100
4.0
1.0
DS
V
= V , I = 650 mA
2.0
−
−
GS(th)
DS
D
*R
I
D
= 50 A, V = 10 V
0.82
mW
DS(on)
GS
*Accurate RDS(on) test at die level is not feasible for this thin die as limited by the test contact precision attainable in a die form. The max RDS(on)
specification is defined from the historical performance of the die in package but is not guaranteed by test in production. The die RDS(on)
performance depends on the Source wire/ribbon bonding layout.
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
NVCW4LS001N08HA/D
June, 2022 − Rev. 0
NVCW4LS001N08HA
ABSOLUTE MAXIMUM RATINGS
in Reference to the NVBLS1D1N08H electrical data in TOLL ( T = 25°C unless otherwise noted)
J
Symbol
Parameter
Ratings
80
Unit
V
V
DSS
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current R
V
GS
20
V
°
I
D
(Note 1, 2)
T
C
T
C
T
C
T
C
= 25 C
351
A
qJC
°
= 100 C
248
A
°
P
D
Power Dissipation R
(Note 1)
= 25 C
311
W
W
mJ
°C
qJC
°
= 100 C
156
E
AS
Single Pulse Avalanche Energy (I
= 31.9 A)
1580
–55 to +175
L(pk)
T
T
Operating and Storage Temperature
J, STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular
conditions noted.
2. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
Thermal Resistance, Junction to Case Steady State
0.48
°C/W
R
q
J C
R
Thermal Resistance, Junction to Ambient Steady State (Note 3)
35.8
°C/W
q
J A
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
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2
NVCW4LS001N08HA
ELECTRICAL CHARACTERISTICS
in Reference to the NVBLS1D1N08H electrical data in TOLL ( T = 25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
I
= 250 mA, V = 0 V
80
−
−
−
−
−
V
DSS
DSS
GSS
D
GS
I
I
V
= 80 V, V = 0 V
10
mA
nA
DS
DS
GS
V
= 0 V, V = 20 V
−
100
GS
ON CHARACTERISTICS (Note 4)
V
Gate to Source Threshold Voltage
Drain to Source On−Resistance
Forward Transconductance
V
GS
V
GS
V
DS
= V I = 650 mA
DS, D
2.0
−
−
4.0
1.05
−
V
mW
S
GS(th)
R
= 10 V, I = 50 A
0.92
213
DS(on)
FS
D
g
= 5 V, I = 50 A
−
D
CHARGES, CAPACITANCE
C
C
C
Input Capacitance
V
= 40 V, V = 0 V,
−
−
−
−
−
−
−
11200
1600
49
−
−
−
−
−
−
−
pF
pF
pF
nC
nC
nC
nC
iss
DS
GS
f = 1 MHz
Output Capacitance
oss
rss
Reverse Transfer Capacitance
Total Gate Charge
Q
Q
Q
Q
V
GS
= 10 V, V = 64 V I = 50 A
166
29
g(ToT)
g(th)
gs
DS
, D
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
44
35
gd
SWITCHING CHARACTERISTICS (Note 5)
t
t
t
t
Turn−On Delay Time
Rise Time
V
R
= 64 V, I = 50 A, V = 10 V,
= 6 W
−
−
−
−
45
43
−
−
−
−
ns
ns
ns
ns
d(on)
DS
D
GS
G
r
Turn−Off Delay Time
Fall Time
141
43
d(off)
f
DRAIN*SOURCE DIODE CHARACTERISTICS
SD
V
Source to Drain Diode Voltage
I
I
= 50 A, V = 0 V
−
−
−
1.2
V
S
GS
−
t
rr
Reverse Recovery Time
= 50 A, V = 0 V, dI /dt = 100 A/ms
92
ns
S
GS
S
−
Q
Reverse Recovery Charge
−
234
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
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3
NVCW4LS001N08HA
TYPICAL CHARACTERISTICS
250
200
150
100
250
10 V to 6 V
5.0 V
V
DS
= 5 V
200
150
100
V
= 4.5 V
4.0 V
GS
T = 25°C
J
50
0
50
0
T = 175°C
J
T = −55°C
J
0
1
2
3
4
5
2
3
4
5
6
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
20
15
10
2.0
1.5
T = 25°C
D
J
I
= 50 A
1.0
0.5
V
GS
= 10 V
5
0
3
4
5
6
7
8
9
10
0
50
100
150
200
250
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
1E−03
1E−04
1E−05
1E−06
1E−07
T = 175°C
J
V
I
= 10 V
= 50 A
GS
T = 150°C
J
D
T = 125°C
J
T = 100°C
J
T = 85°C
J
T = 25°C
J
1E−08
1E−09
0.8
0.6
−75 −50 −25
0
25 50 75 100 125 150 175
5
15
V
25
35
45
55
65
75
T , JUNCTION TEMPERATURE (°C)
J
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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4
NVCW4LS001N08HA
TYPICAL CHARACTERISTICS
10
100K
10K
Q
G(tot)
C
ISS
8
6
4
C
OSS
RSS
Q
Q
GD
GS
1K
100
10
T = 25°C
C
J
2
0
V
= 0 V
I
D
= 50 A
GS
f = 1 MHz
V
DS
= 64 V
0
40
80
120
160
200
0.1
1
10
80
Q , TOTAL GATE CHARGE (nC)
G
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
1000
250
100
V
V
= 10 V
= 64 V
= 50 A
V
GS
= 0 V
GS
t
t
d(off)
DS
I
D
10
1
t
f
t
r
100
10
d(on)
0.1
T = 175°C
J
0.01
T = 25°C
J
T = −55°C
J
0.001
0
5
10 15
20 25
30 35 40 45
50
0
0.2
0.4
0.6
0.8
1.0
R , GATE RESISTANCE (W)
G
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
1000
100
10
T
= 25°C
J(initial)
10 ms
T
= 25°C
C
0.5 ms
1 ms
Single Pulse
≤ 10 V
V
GS
T
= 100°C
10
1
J(initial)
10 ms
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
0.1
1
10
100
1000
0.0001
0.001
t , TIME IN AVALANCHE (s)
AV
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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5
NVCW4LS001N08HA
TYPICAL CHARACTERISTICS
100
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
TIME (s)
Figure 13. Transient Thermal Impedance
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