NVD5890NLT4G [ONSEMI]
功率 MOSFET，40V，123A，3.7 mΩ，单 N 沟道，DPAK，逻辑电平。;
| 型号： | NVD5890NLT4G |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，40V，123A，3.7 mΩ，单 N 沟道，DPAK，逻辑电平。 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：214K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NVD5890NL
Power MOSFET
40 V, 3.7 mW, 123 A, Single N−Channel
DPAK
Features
• Low R
to Minimize Conduction Losses
• MSL 1 @ 260°C
DS(on)
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• 100% Avalanche Tested
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
• AEC Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
3.7 mW @ 10 V
5.5 mW @ 4.5 V
40 V
123 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
D
V
DSS
Gate−to−Source Voltage
V
"20
123
V
GS
N−Channel
Continuous Drain Cur-
rent (R ) (Notes 1 &
T
T
T
= 25°C
= 85°C
= 25°C
I
A
C
C
C
D
G
q
JC
95
3)
S
Power Dissipation
(R ) (Note 1)
P
107
W
A
D
q
JC
Steady
State
4
Continuous Drain Cur-
rent (R ) (Notes 1, 2,
T = 25°C
A
I
24
18.5
4.0
D
q
JA
T = 85°C
A
3)
2
1
Power Dissipation
T = 25°C
A
P
W
3
D
(R ) (Notes 1 & 2)
q
JA
CASE 369C
DPAK
(Bent Lead)
STYLE 2
Pulsed Drain Current
t =10ms T = 25°C
I
400
100
A
A
p
A
DM
I
DmaxPkg
Current Limited by Package
(Note 3)
T = 25°C
A
Operating Junction and Storage Temperature
T , T
−55 to
°C
J
stg
MARKING DIAGRAMS
& PIN ASSIGNMENT
175
Source Current (Body Diode)
I
S
100
320
A
4
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Drain
Energy (V = 10 V, L = 0.3 mH, I
=
GS
L(pk)
46.2 A, R = 25 W)
G
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
2
Drain
1
3
Gate Source
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
Y
WW
= Year
= Work Week
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and suty cycle.
5890NL = Device Code
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
October, 2012 − Rev. 0
NVD5890NL/D
NVD5890NL
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case (Drain)
R
1.4
37
°C/W
q
JC
Junction−to−Ambient − Steady State (Note 2)
R
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
40
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
40
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
T = 25°C
1.0
100
mA
DSS
J
V
= 0 V,
= 40 V
GS
DS
V
T = 150°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = "20 V
"100
nA
GSS
DS
GS
V
V
= V , I = 250 mA
1.5
2.5
V
GS(TH)
GS
DS
D
Negative Threshold Temperature
Coefficient
V
/T
7.4
mV/°C
GS(TH)
J
Drain−to−Source On Resistance
R
V
= 10 V, I = 50 A
2.9
4.4
3.7
5.5
mW
S
DS(on)
GS
D
V
GS
= 4.5 V, I = 50 A
D
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
gFS
V
= 15 V, I = 15 A
16.3
DS
D
C
4760
580
385
84
pF
iss
V
GS
= 0 V, f = 1.0 MHz,
Output Capacitance
C
oss
V
DS
= 25 V
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Q
V
GS
= 10 V, V = 15 V,
nC
nC
G(TOT)
DS
= 50 A
I
D
Total Gate Charge
Q
42
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Q
4.2
G(TH)
V
GS
= 4.5 V, V = 15 V,
DS
I
= 50 A
D
Q
13.7
18.8
GS
Q
GD
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
t
12
35
38
11
ns
d(on)
t
r
V
= 10 V, V = 20 V,
DS
GS
D
I
= 50 A, R = 2.0 W
G
Turn−Off Delay Time
Fall Time
t
d(off)
t
f
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NVD5890NL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
S
= 0 V,
T = 25°C
0.86
0.78
1.2
1.0
V
GS
J
I
= 50 A
V
S
= 0 V,
= 20 A
T = 25°C
J
GS
I
Reverse Recovery Time
Charge Time
t
35
19
16
34
ns
RR
ta
V
GS
= 0 V, dIs/dt = 100 A/ms,
I
= 50 A
S
Discharge Time
tb
Reverse Recovery Charge
Q
nC
RR
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3
NVD5890NL
TYPICAL PERFORMANCE CURVES
250
200
150
100
50
250
T = 25°C
J
4.8 V
V
DS
≥ 10 V
10 V
V
GS
= 4.4 V
4 V
200
150
100
50
T = 125°C
J
3.6 V
T = 25°C
J
3.2 V
T = −55°C
J
0
0
2.0
0.0
1.0
2.0
3.0
4.0
5.0
2.5
3.0
3.5
4.0
4.5
5.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.010
0.008
0.006
0.004
0.002
0.001
0.010
0.008
0.006
0.004
0.002
0.000
I
= 50 A
T = 25°C
D
J
T = 25°C
J
V
= 4.5 V
GS
V
GS
= 10 V
0
40
80
120
160
200
240
280
2
3
4
5
6
7
8
9
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.0
1.5
1.0
0.5
100000
10000
1000
V
GS
= 0 V
I
V
= 50 A
D
= 10 V
GS
T = 150°C
J
T = 125°C
J
−50 −25
0
25
50
75 100 125 150 175
5
10
15
20
25
30
35
40
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Drain Voltage
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4
NVD5890NL
TYPICAL PERFORMANCE CURVES
7000
6000
5000
4000
3000
2000
1000
0
10
Q
T
V
= 0 V
GS
T = 25°C
J
8
6
4
2
0
C
iss
Q
Q
gs
gd
V
I
= 15 V
= 50 A
DS
C
D
oss
T = 25°C
J
C
rss
0
10
20
30
40
0
10
20
30
40
50
60
70
80
90
DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−To−Source Voltage vs.
Total Charge
1000
100
10
100
75
50
25
0
V
I
= 20 V
= 50 A
= 10 V
V
= 0 V
DD
GS
T = 25°C
J
t
D
d(off)
V
GS
t
d(on)
t
r
t
f
1
10
R , GATE RESISTANCE (W)
100
0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10 ms
100 ms
V
≤ 20 V
GS
1 ms
SINGLE PULSE
10
T
C
= 25°C
10 ms
dc
R
LIMIT
DS(on)
THERMAL LIMIT
PACKAGE LIMIT
1
0.1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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5
NVD5890NL
TYPICAL PERFORMANCE CURVES
10
D = 0.5
0.2
1.0
0.1
0.05
0.02
0.1
0.01
0.01
SINGLE PULSE
R
= 1.4°C/W
q
JC
Steady State
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, TIME (s)
Figure 12. Thermal Response
ORDERING INFORMATION
Order Number
†
Package
Shipping
NVD5890NLT4G
DPAK
(Pb−Free)
2500/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
4
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE G
2
1
DATE 31 MAY 2023
3
SCALE 1:1
GENERIC
MARKING DIAGRAM*
XXXXXXG
ALYWW
AYWW
XXX
XXXXXG
IC
Discrete
XXXXXX = Device Code
A
= Assembly Location
L
= Wafer Lot
STYLE 1:
STYLE 2:
PIN 1. GATE
2. DRAIN
STYLE 3:
STYLE 4:
STYLE 5:
Y
WW
G
= Year
= Work Week
= Pb−Free Package
PIN 1. BASE
PIN 1. ANODE
2. CATHODE
3. ANODE
PIN 1. CATHODE
2. ANODE
3. GATE
PIN 1. GATE
2. ANODE
3. CATHODE
4. ANODE
2. COLLECTOR
3. EMITTER
3. SOURCE
4. DRAIN
4. COLLECTOR
4. CATHODE
4. ANODE
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLE 6:
PIN 1. MT1
2. MT2
STYLE 7:
PIN 1. GATE
STYLE 8:
PIN 1. N/C
STYLE 9:
PIN 1. ANODE
2. CATHODE
STYLE 10:
PIN 1. CATHODE
2. ANODE
2. COLLECTOR
2. CATHODE
3. GATE
4. MT2
3. EMITTER
4. COLLECTOR
3. ANODE
4. CATHODE
3. RESISTOR ADJUST
4. CATHODE
3. CATHODE
4. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON10527D
DPAK (SINGLE GAUGE)
PAGE 1 OF 1
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