NVDSH20120C [ONSEMI]
Silicon Carbide (SiC) Schottky Diode - EliteSiC, 20A, 1200V, D3, TO-247-2L;
| 型号： | NVDSH20120C |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) Schottky Diode - EliteSiC, 20A, 1200V, D3, TO-247-2L |
| 文件： | 总7页 (文件大小：286K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
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Silicon Carbide Schottky
Diode
1200 V, 20 A
NVDSH20120C
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
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1. Cathode
2. Anode
Schottky Diode
Features
• Max Junction Temperature 175°C
• Avalanche Rated 166 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
1
2
TO−247−2LD
CASE 340DA
• No Reverse Recovery / No Forward Recovery
• NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
MARKING DIAGRAM
• These Devices are Halogen Free/BFR Free and are RoHS Compliant
Applications
• Automotive HEV−EV Onboard Chargers
• Automotive HEV−EV DC−DC Converters
DSH
20120C
AYWWZZ
DSH20120C
A
YWW
ZZ
= Specific Device Code
= Assembly Plant Code
= Date Code (Year & Week)
= Lot Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
April, 2021 − Rev. 1
NVDSH20120C/D
NVDSH20120C
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Value
1200
166
Unit
V
V
RRM
Peak Repetitive Reverse Voltage
E
AS
Single Pulse Avalanche Energy (Note 1)
Continuous Rectified Forward Current @ T < 149°C
mJ
A
I
F
20
C
Continuous Rectified Forward Current @ T < 135°C
26
C
I
Non-Repetitive Peak Forward Surge Current
896
A
A
T
C
T
C
= 25°C, 10 ms
= 150°C, 10 ms
F, Max
854
I
Non-Repetitive Forward Surge Current
Repetitive Forward Surge Current
Power Dissipation
Half-Sine Pulse, t = 8.3 ms
119
A
F,SM
p
I
Half-Sine Pulse, t = 8.3 ms
40
A
F,RM
p
Ptot
T
= 25°C
214
W
W
°C
C
C
T
= 150°C
35
T , T
J
Operating and Storage Temperature Range
−55 to +175
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. E of 166 mJ is based on starting T = 25°C, L = 0.5 mH, I = 25.8 A, V = 50 V.
AS
J
AS
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
0.7
Unit
R
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
°C/W
°C/W
q
JC
JA
R
40
q
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Forward Voltage
Test Condition
I = 20 A, T = 25°C
Min
−
Typ
1.38
1.64
1.87
2.06
6.25
15.7
100
1480
82
Max
1.75
−
Unit
V
F
V
F
J
I = 20 A, T = 125°C
−
F
J
I = 20 A, T = 175°C
−
−
F
J
I
R
Reverse Current
V
R
V
R
V
R
= 1200 V, T = 25°C
−
200
200
200
−
mA
J
= 1200 V, T = 125°C
−
J
= 1200 V, T = 175°C
−
J
Q
Total Capacitive Charge
Total Capacitance
V = 800 V
−
nC
pF
C
C
V
R
V
R
V
R
= 1 V, f = 100 kHz
= 400 V, f = 100 kHz
= 800 V, f = 100 kHz
−
−
−
−
−
58
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Part Number
Top Marking
Package
Shipping
NVDSH20120C
DSH20120C
TO−247−2LD
(Pb-Free / Halogen Free)
30 Units / Tube
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2
NVDSH20120C
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
40
35
30
25
20
15
10
1E−04
T = −55°C
T = 75°C
J
J
T = 25°C
T = 125°C
J
J
T = 175°C
J
1E−05
T = 125°C
T = 175°C
J
J
T = 75°C
J
1E−06
T = 25°C
J
1E−07
1E−08
5
0
T = −55°C
J
0
1
2
3
4
0
200
400
600
800
1000 1200
V , FORWARD VOLTAGE (V)
F
V , REVERSE VOLTAGE (V)
R
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
220
200
180
160
140
120
100
80
180
150
120
90
D = 0.1
D = 0.2
D = 0.3
D = 0.5
60
60
D = 1.0
40
30
0
20
0
D = 0.7
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T , CASE TEMPERATURE (°C)
C
T , CASE TEMPERATURE (°C)
C
Figure 3. Current Derating
Figure 4. Power Derating
120
100
80
10K
1K
60
40
100
10
20
0
0
100 200
300
400 500
600
700 800
0.1
1
10
100
800
V , REVERSE VOLTAGE (V)
R
V , REVERSE VOLTAGE (V)
R
Figure 5. Capacitive Charge vs. Reverse
Voltage
Figure 6. Capacitive vs. Reverse Voltage
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3
NVDSH20120C
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
30
25
20
15
10
5
0
0
100 200
300
400
500 600
700
800
V , REVERSE VOLTAGE (V)
R
Figure 7. Capacitance Stored Energy
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
P
DM
Notes:
= 0.7°C/W
R
q
JC
0.01
t
Peak T = P
x Z (t) + T
q
DM JC C
1
J
Duty Cycle, D = t /t
t
1
2
Single Pulse
2
0.01
0.00001
0.0001
0.001
t, PULSE TIME (s)
0.01
0.1
1
Figure 8. Junction−to−Case Transient Thermal Response Curve
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4
NVDSH20120C
PACKAGE DIMENSIONS
TO−247−2LD
CASE 340DA
ISSUE A
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5
NVDSH20120C
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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