NVG450A120L5DSC [ONSEMI]
VE-Trac Dual - Automotive 1200 V, 450 A Dual Side Cooling Half-Bridge Power Module;
| 型号： | NVG450A120L5DSC |
| 厂家： | 
ONSEMI |
| 描述： | VE-Trac Dual - Automotive 1200 V, 450 A Dual Side Cooling Half-Bridge Power Module |
| 文件： | 总11页 (文件大小：312K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Automotive 1200 V, 450 A
Dual Side Cooling
Half-Bridge Power Module
VE-Tract Dual
NVG450A120L5DSC
AHPM15−CEA
CASE 100DD
Product Description
The NVG450A120L5DSC is a member of the VE−Trac Dual power
module family with dual side cooling and compact footprints for
Hybrid (HEV) and Electric Vehicle (EV) traction inverter application.
The module consists of two latest 1200 V Ultra Field Stop (UFS)
IGBTs in a half−bridge configuration. The chipset utilizes the proven
Trench Ultra Field Stop IGBT technology in providing high current
density while offering robust short circuit protection and increased
blocking voltage. Additionally, UFS IGBT and copacked soft diode
deliver a low power loss operation and soft switching simultaneously,
which helps to improve overall system efficiency in HEV/EV traction
applications.
MARKING DIAGRAM
ZZZ = Assembly Lot Code
AT
Y
= Assembly & Test Site Code
= Year
WW = Work Week
XXXX = Specific Device Code
NNN = Serial Number
Features
• Dual−Side Cooling
• Integrated Chip Level Temperature & Current Sensor
• T
= 175°C
• Low Stray Inductance
vj max
• Low Conduction and Switching Losses
• Automotive Grade
• 4.2 kV Isolated DBC Substrate
• This is a Pb−Free Device
Typical Applications
• Hybrid and Electric Vehicle Traction Inverter
• High Power DC−DC Converter
ORDERING INFORMATION
See detailed ordering and shipping information on page 9 of
this data sheet.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
August, 2022 − Rev. 2
NVG450A120L5DSC/D
VE−Tract Dual NVG450A120L5DSC
PIN DESCRIPTION
Pin No.
Pin
N
Description
Low Side Emitter
Pin Arrangement
1
2
P
High Side Collector
3
4
H/S COLLECTOR SENSE
H/S CURRENT SENSE
H/S EMITTER SENSE
H/S GATE
High Side Collector Sense
High Side Current Sense
High Side Emitter Sense
High Side Gate
5
6
7
H/S TEMP SENSE (CATHODE)
H/S TEMP SENSE (ANODE)
~
High Side Temp sense Diode Cathode
High Side Temp sense Diode Anode
Phase Output
8
9
10
11
12
13
14
15
L/S CURRENT SENSE
L/S EMITTER SENSE
L/S GATE
Low Side Current Sense
Low Side Emitter Sense
Low Side Gate
L/S TEMP SENSE (CATHODE)
L/S TEMP SENSE (ANODE)
L/S COLLECTOR SENSE
Low Side Temp sense Diode Cathode
Low Side Temp sense Diode Anode
Low Side Collector Sense
DBC Substrate
Al O isolated substrate, basic isolation, and copper on both sides
2
3
Lead frame
Copper, with tin electro−plating
Flammability Information
All Power Module packaging materials meet UL flammability rating class 94V−0
MODULE CHARACTERISTICS
Symbol
Parameter
Continuous Operating Junction Temperature Range
Continuous Operating Junction Temperature Under Switching Conditions
Storage Temperature Range
Rating
−40 to 150
−40 to 175
−40 to 125
4200
Unit
°C
T
vj
T
°C
vj.op
STG
T
°C
V
ISO
Isolation Voltage, AC, f = 50 Hz, t = 1 s
V
Creepage
Clearance
CTI
Terminal to Heatsink
Terminal to Terminal
6.0
mm
Terminal to Heatsink
Terminal to Terminal
3.2
mm
Comparative Tracking Index
>600
Max.
8
Min.
Typ.
−
L
sCE
Stray Inductance
−
−
−
−
nH
mW
g
R
Module Lead Resistance, Terminals − Chip
Module Weight
−
0.15
72
CC’+EE’
G
−
M
M4 Screws for Module Terminals
−
2.2
Nm
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VE−Tract Dual NVG450A120L5DSC
ABSOLUTE MAXIMUM RATINGS (T = 25°C, unless otherwise specified)
vj
Symbol
IGBT
Parameter
Rating
Unit
V
V
Collector to Emitter Voltage
Gate to Emitter Voltage
1200
−15/+20
20
V
V
V
A
A
A
CES
GES
V
Gate to Emitter Voltage, Limits under switching conditions
Implemented Collector Current
GES transient
I
450
CN
I
Continuous DC Collector Current, Tvjmax = 175°C, T = 65°C, Ref. Heatsink
410 (Note 1)
900
C nom
F
I
Pulsed Collector Current @ VGE = 15 V, tp = 1 ms
CRM
DIODE
V
Repetitive Peak Reverse Voltage
Implemented Forward Current
1200
450
V
A
A
A
RRM
I
FN
I
F
Continuous Forward Current, Tvjmax = 175°C, T = 65°C, Ref. Heatsink
360 (Note 1)
900
F
I
Repetitive Peak Forward Current, t = 1 ms
p
FRM
2
2
I t value
V
R
= 0 V, t = 10 ms, Tv = 150°C
14400
12960
A s
p
J
T
= 175°C
VJ
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Verified by characterization, not test.
THERMAL CHARACTERISTICS (Verified by characterization, not test)
Symbol
Parameter
Min.
−
Typ.
0.06
0.15
Max.
0.08
−
Unit
°C/W
°C/W
IGBT.R
Effective Rth, Junction to Case (Note 2)
th,J−C
th,J−F
IGBT.R
Effective Rth, Junction to Fluid, l
= 6 W/m−K, F = 660 N
−
TIM
10 L/min, 65°C, 50/50 EGW, Ref. Heatsink
Diode.R
Diode.R
Effective Rth, Junction to Case (Note 2)
−
−
0.08
0.21
0.10
°C/W
°C/W
th,J−C
Effective Rth, Junction to Fluid, l
= 6 W/m−K, F = 660 N
−
th,J−F
TIM
10 L/min, 65°C, 50/50 EGW, Ref. Heatsink
2. For the measurement point of case temperature (Tc), DBC discoloration, picker circle print is allowed, please refer to the VE−Trac Dual
assembly guide for additional details about acceptable DBC surface finish.
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VE−Tract Dual NVG450A120L5DSC
CHARACTERISTICS OF IGBT (Tvj = 25°C, unless otherwise specified)
Parameters
Conditions
= 15 V, I = 300 A,
Min
Typ
Max
unit
V
CESAT
Collector to Emitter Saturation Voltage
(Terminal)
V
GE
T = 25°C
vj
−
−
−
1.38
1.50
1.53
1.6
−
−
V
C
T
= 150°C
= 175°C
vj
T
vj
−
−
−
1.59
1.82
1.87
−
−
−
V
V
= 15 V, I = 450 A,
T = 25°C
vj
GE
C
T
= 150°C
= 175°C
vj
vj
T
I
Collector to Emitter Leakage Current
= 0 V, V = 1200 V
T = 25°C
vj
−
−
−
7
1
−
mA
CES
GE
CE
T
vj
= 175°C
I
Gate – Emitter Leakage Current
Threshold Voltage
V
V
V
= 0 V, V = +20 V/−15 V
−
5.8
−
−
6.8
1.45
0
400
7.6
−
nA
V
GES
CE
CE
GE
GE
V
th
= V , I = 500 mA
GE C
Q
Total Gate Charge
= −8 to 15 V, V = 600 V
mC
W
G
CE
R
Internal Gate Resistance
Input Capacitance
−
−
Gint
C
V
CE
V
CE
V
CE
= 30 V, V = 0 V, f = 1 MHz
−
61
−
nF
nF
nF
ns
ies
GE
C
Output Capacitance
= 30 V, V = 0 V, f = 1 MHz
−
1.5
0.7
−
oes
GE
C
Reverse Transfer Capacitance
Turn On Delay, Inductive Load
= 30 V, V = 0 V, f = 1 MHz
−
−
res
GE
T
I
= 300 A, V = 600 V
T
= 25°C
−
−
−
128
121
118
−
−
−
d.on
C
GE
CE
vj
V
= +15/−8 V
T
vj
T
vj
= 150°C
= 175°C
Rg.on = 3 W
T
Rise Time, Inductive Load
Turn Off Delay, Inductive Load
Fall Time, Inductive Load
I
= 300 A, V =600 V
GE
T
= 25°C
−
−
−
59
66
68
−
−
−
ns
ns
ns
mJ
r
C
V
CE
vj
= +15/−8 V
T
vj
T
vj
= 150°C
= 175°C
Rg.on = 3 W
T
I
= 300 A, V = 600 V
T
= 25°C
= 150°C
= 175°C
−
−
−
1070
1132
1157
−
−
−
d.off
C
CE
vj
V
= +15/−8 V
T
vj
T
vj
GE
Rg.off = 5 W
T
I
= 300 A, V =600 V
T
= 25°C
= 150°C
= 175°C
−
−
−
103
250
281
−
−
−
f
C
CE
vj
V
= +15/−8 V
T
vj
T
vj
GE
Rg.off = 5 W
E
ON
Turn−On Switching Loss (Including
Diode Reverse Recovery Loss)
I
= 300 A, V = 600 V
T
= 25°C
= 150°C
= 175°C
−
−
−
18
28
30
−
−
−
C
CE
vj
V
= +15/−8 V
T
vj
T
vj
GE
Rg.on = 3 W
Ls = 25 nH
di/dt (T =25°C) = 4.06 A/ns
di/dt (T =175°C) = 3.95 A/ns
vj
vj
E
OFF
Turn−Off Switching Loss
I =300A, V =600 V
T
= 25°C
−
−
−
19
34
37
−
−
−
mJ
C
V
CE
vj
=+15/−8 V
T
vj
T
vj
= 150°C
= 175°C
GE
Rg.off=5 W
Ls=25 nH
dv/dt (T =25°C) = 4.15 V/ns
vj
dv/dt (T =175°C) = 3.21 V/ns
vj
Esc
Minimum Short Circuit Energy Withstand
V
= 15 V, V = 600 V
J
GE
CC
T
vj
T
vj
= 25°C
16
8.8
−
−
−
−
= 175°C
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VE−Tract Dual NVG450A120L5DSC
CHARACTERISTICS OF INVERSE DIODE (Tvj = 25°C, unless otherwise specified)
Parameters
Conditions
= 0 V, I = 300 A,
Min
Typ
Max
unit
V
F
Diode Forward Voltage (Terminal)
V
T = 25°C
vj
−
−
−
1.58
1.56
1.54
1.82
−
−
V
GE
GE
C
T
= 150°C
= 175°C
vj
vj
T
V
= 0 V, I = 450 A,
T
= 25°C
−
−
−
1.80
1.81
1.78
−
−
−
C
vj
T
= 150°C
= 175°C
vj
vj
T
E
Reverse Recovery Energy
Recovered Charge
V
= 600 V, I = 300 A,
GON
T = 25°C
vj
−
−
−
10
22
24
−
−
−
mJ
mC
A
rr
R
R
F
= 3 W,
T
= 150°C
= 175°C
vj
vj
−di/dt = 3.95 A/ns (175°C)
T
V
GE
= −8 V
Q
V
= 600 V, I = 300 A,
T = 25°C
vj
−
−
−
25
53
59
−
−
−
RR
R
F
R
= 3 W,
T
vj
= 150°C
= 175°C
GON
vj
−di/dt = 3.95 A/ns (175°C)
T
V
GE
= −8 V
Irr
Peak Reverse Recovery Current
V
= 600 V, I = 300 A,
T = 25°C
vj
−
−
−
250
332
343
−
−
−
R
F
R
= 3 W,
T
vj
= 150°C
= 175°C
GON
vj
−di/dt = 3.95 A/ns (175°C)
T
V
GE
= −8 V
SENSOR CHARACTERISTICS (Tvj = 25°C, unless otherwise specified)
Parameters
Conditions
Min
Typ
Max
unit
T
sense
Temperature Sense
I = 250 mA,
F
T
= −40°C
= 25°C
−
2.95
(Note 3)
−
3.40
3.01
−
3.086
(Note 3)
−
V
vj
vj
T
T
vj
vj
= 150°C
= 175°C
2.27
2.08
T
−
−
I
Current Sense
R
R
= 10 W,
= 20 W,
I
I
I
= 600 A
= 300 A
= 200 A
−
−
−
392
254
209
−
−
−
mV
sense
shunt
shunt
C
C
C
−
−
−
566
377
314
−
−
−
I
C
I
C
I
C
= 600 A
= 300 A
= 200 A
3. Measured at final test.
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VE−Tract Dual NVG450A120L5DSC
TYPICAL CHARACTERISTICS
900
800
700
600
500
400
300
200
900
V
CE
= 20 V
800
700
600
500
400
300
200
25°C
150°C
175°C
25°C
175°C
100
0
100
0
150°C
10
Vge = 15 V
0
0.5
1.0
1.5
(V)
2.0
2.5
3.0
2
4
6
8
12
14
V
CE
V
GE
(V)
Figure 1. IGBT Output Characteristic
Figure 2. IGBT Transfer Characteristic
900
800
700
600
500
400
300
200
900
800
700
600
500
400
300
200
Tvj = 25°C
Tvj = 175°C
Vge = 13 V
Vge = 13 V
Vge = 15 V
Vge = 17 V
Vge = 17 V
Vge = 15 V
Vge = 11 V
Vge = 11 V
Vge = 9 V
Vge = 9 V
5
100
0
100
0
0
1
2
3
4
6
0
1
2
3
4
5
6
V
CE
(V)
V
CE
(V)
Figure 3. IGBT Output Characteristic
Figure 4. IGBT Output Characteristic
1000
100
10
15
10
5
Qg
V
= 0 V, T = 25°C,
vj
GE
f = 1 MHz
Cies
0
Coes
1
−5
V
= 600 V, I = 300 A, T = 25°C
C vj
CE
Cres
100
0.1
−10
0
1
2
3
0
200
300
(V)
400
500
600
V
Q
(mC)
CE
G
Figure 5. Gate Charge Characteristic
Figure 6. Capacitance Characteristic
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VE−Tract Dual NVG450A120L5DSC
TYPICAL CHARACTERISTICS
50
45
40
35
30
25
20
15
10
50
45
175°C
150°C
40
175°C
35
150°C
30
25°C
25
25°C
20
15
10
5
5
0
V
GE
= +15/−8 V, R
= 3 W, V = 600 V
V
= +15/−8 V, I = 300 A, V = 600 V
GE C CE
Gon
CE
0
100
200
300
(A)
400
1.5
2.5
3.5
4.5
5.5
6.5
I
C
Rgon (W)
Figure 7. IGBT Turn−on Losses vs. IC
Figure 8. IGBT Turn−on Losses vs. Rgon
60
50
40
30
20
10
0
50
175°C
45
40
35
30
25
20
150°C
175°C
150°C
25°C
25°C
15
10
V
GE
= +15/−8 V, R
= 5 W, V = 600 V
V
GE
= +15/−8 V, I = 300 A, V = 600 V
Goff
CE
C
CE
100
200
300
(A)
400
5
10
15
20
I
C
Rgoff (W)
Figure 9. IGBT Turn−off Losses vs. IC
Figure 10. IGBT Turn−off Losses vs. Rgoff
10000
1000
100
10000
Td.off
Td.on
Td.off
1000
100
Td.on
Tf
Tf
Tr
Tr
10
1
10
1
V
R
= +15/−8 V, R
= 3 W,
V
R
= +15/−8 V, R
= 3 W,
GE
Gon
GE
Gon
= 5 W, V = 600 V, Tj = 25°C
= 5 W, V = 600 V, Tj = 25°C
Goff
CE
Goff
CE
100
200
300
(A)
400
100
200
300
(A)
400
I
I
C
C
Figure 11. IGBT Switching Times vs. IC, Tvj = 255C
Figure 12. IGBT Switching Times vs. IC, Tvj = 1755C
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VE−Tract Dual NVG450A120L5DSC
TYPICAL CHARACTERISTICS
1
1000
900
800
700
600
500
400
300
200
10 L/min, Tf = 65°C, 50/50 EGW, Ref. Heatsink
Zth,j−f: IGBT
Chip
Module
0.1
0.01
i:
1
2
3
4
R
[K/W]: 0.005 0.021 0.030 0.094
th
100
0
t
[s]:
0.013 0.110 1.535 4.640
th
V
GE
= +15/−8 V, R
= 5 W, T = 150°C
Goff
vj
0.001
0
400
800
(V)
1200
0.0001
0.001
0.01
0.1
1
10
V
Time (s)
CE
Figure 13. Reverse Bias Safe Operating Area
Figure 14. IGBT Transient Thermal Impedance
900
800
700
600
500
400
35
30
175°C
25
150°C
20
15
10
25°C
300
200
150°C
175°C
25°C
5
0
100
0
R
= 3 W, V = 600 V
CE
Gon
0.2
0.6
1.0
1.4
V (V)
1.8
2.2
2.6
100
200
300
I (A)
400
F
F
Figure 15. Diode Forward Characteristics
Figure 16. Diode Switching Losses vs. IF
1
30
10 L/min, Tf = 65°C, 50/50 EGW, Ref. Heatsink
Zth,j−f: Diode
25
20
15
10
175°C
0.1
150°C
0.01
25°C
i:
1
2
3
4
R
[K/W]: 0.006 0.033 0.052 0.126
5
0
th
t
th
[s]:
0.010 0.084 0.960 3.371
V
= +15/−8 V, I = 300 A, V = 600 V
C CE
GE
0.001
1.5
2.5
3.5
4.5
5.5
6.5
0.0001
0.001
0.01
0.1
1
10
Time (s)
Rgon (W)
Figure 17. Diode Reverse Recovery Losses vs. Rgon
Figure 18. Diode Transient Thermal Impedance
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VE−Tract Dual NVG450A120L5DSC
TYPICAL CHARACTERISTICS
700
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
R
= 10 W
y = −0.006x + 3.1867
Shunt
600
500
400
300
200
100
175°C
150°C
−40°C
25°C
Ibias = 250 mA
y = −0.4587x + 117.25
400 600
0
−40
10
60
110
160
0
200
Temperature (°C)
I
C
(A)
Figure 19. Temperature Sensor Characteristics
Figure 20. Current Sensor Characteristics
1000
900
800
700
600
500
400
300
200
1400
1300
1200
1100
1000
I
I
= 1 mA, Tvj ≤ 25°C;
= 30 mA, Tvj ≥ 25°C
R
= 20 W
CES
CES
Shunt
175°C
150°C
−40°C
25°C
900
800
100
0
y = −0.6311x + 188.28
0
200
400
600
−40
0
40
80
120
160
200
I
C
(A)
Tvj (°C)
Verified by characterization/design,not by test.
Figure 21. Current Sensor Characteristics
Figure 22. Maximum Allowed Vce
ORDERING INFORMATION
Device
Device Marking
Package
Shipping
NVG450A120L5DSC
N412DSC
AHPM15−CEA
(Pb−Free)
6 Unit / Tube
VE−Trac is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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9
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
AHPM15−CEA
CASE 100DD
ISSUE B
DATE 28 SEP 2022
GENERIC
MARKING DIAGRAM*
ZZZ = Assembly Lot Code
AT
Y
= Assembly & Test Site Code
= Year
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
WW = Work Week
XXXX = Specific Device Code
NNN = Serial Number
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON86580G
AHPM15−CEA
PAGE 1 OF 1
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