NVG800A75L4DSB2 [ONSEMI]
VE-Trac Dual Gen II - Dual Side Cooling Half-Bridge Power Module for Automotive, 750V, 800A, Straight Power Tabs;
| 型号： | NVG800A75L4DSB2 |
| 厂家： | 
ONSEMI |
| 描述： | VE-Trac Dual Gen II - Dual Side Cooling Half-Bridge Power Module for Automotive, 750V, 800A, Straight Power Tabs |
| 文件： | 总12页 (文件大小：359K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Automotive 750 V, 800 A
Dual Side Cooling
Half-Bridge Power Module
VE-Tract Dual Gen II
AHPM15−CEC
CASE MODHV
NVG800A75L4DSB2
MARKING DIAGRAM
Product Description
The NVG800A75L4DSB2 is part of a family of power modules
with dual side cooling and compact footprints for Hybrid (HEV) and
Electric Vehicle (EV) traction inverter application.
The module consists of two narrow mesa Field Stop (FS4) IGBTs in
a half−bridge configuration. The chipset utilizes the new narrow mesa
IGBT technology in providing high current density and robust short
circuit protection with higher blocking voltage to deliver outstanding
performance in EV traction applications.
Liquid cooling heatsink reference design, loss models and CAD
models are available to support customers in inverter designs.
ZZZ = Assembly Lot Code
AT
Y
= Assembly & Test Location
= Year
Features
WW = Work Week
XXXX = Specific Device Code
• Dual−Side Cooling
• Integrated Chip Level Temperature and Current Sensor
• T
= 175°C for Continuous Operation
• Low−stray Inductance
vj max
• Low Conduction and Switching Losses
• Automotive Grade
• 4.2 kV Isolated DBC Substrate
• AEC Qualified and PPAP Capable
• This Device is Pb−Free and is RoHS Compliant
Typical Applications
• Hybrid and Electric Vehicle Traction Inverter
• High Power DC−DC Converter
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
August, 2022 − Rev. 3
NVG800A75L4DSB2/D
VE−Tract Dual Gen II NVG800A75L4DSB2
PIN DESCRIPTION
Pin #
Pin
N
Pin Function Description
Low Side Emitter
Pin Arrangement
1
2
P
High Side Collector
3
4
H/S COLLECTOR SENSE
H/S CURRENT SENSE
H/S EMITTER SENSE
H/S GATE
High Side Collector Sense
High Side Current Sense
High Side Emitter Sense
High Side Gate
5
6
7
H/S TEMP SENSE (CATHODE)
H/S TEMP SENSE (ANODE)
~
High Side Temp sense Diode Cathode
High Side Temp sense Diode Anode
Phase Output
8
9
10
11
12
13
14
15
L/S CURRENT SENSE
L/S EMITTER SENSE
L/S GATE
Low Side Current Sense
Low Side Emitter Sense
Low Side Gate
L/S TEMP SENSE (CATHODE)
L/S TEMP SENSE (ANODE)
L/S COLLECTOR SENSE
Low Side Temp sense Diode Cathode
Low Side Temp sense Diode Anode
Low Side Collector Sense
Materials
DBC Substrate: Al O isolated substrate, basic isolation, and copper on both sides.
2
3
Lead Frame
Copper with Tin electro−plating.
Flammability Information
All materials present in the power module meet UL flammability rating class 94V−0.
MODULE CHARACTERISTICS
Symbol
Parameter
Continuous Operating Junction Temperature Range
Storage Temperature range
Rating
−40 to 175
−40 to 125
4200
Unit
°C
T
vj
T
STG
°C
V
ISO
Isolation Voltage, AC, f = 50 Hz, t = 1 s
Minimum: Terminal to Terminal
V
Creepage
5.0
mm
mm
Clearance
CTI
Minimum: (Note 1) Terminal to Terminal
Comparative Tracking Index
3.2
>600
Min
Typ
8
Max
L
Stray Inductance
nH
mW
g
sCE
R
Module Lead Resistance, Terminals − Chip
Module Weight
0.15
75
CC’+EE’
G
M
M4 Screws for Module Terminals
2.2
Nm
1. Verified by design / not by test.
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2
VE−Tract Dual Gen II NVG800A75L4DSB2
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless Otherwise Specified)
VJ
Symbol
Parameter
Rating
Unit
IGBT
V
V
Collector to Emitter Voltage
Gate to Emitter Voltage
750
20
V
V
A
A
CES
GES
I
Implemented Collector Current
800
CN
(1)
I
Continuous DC Collector Current, Tv
heatsink
= 175°C, T = 65°C, ref.
550
C nom
Jmax
F
I
Pulsed Collector Current @ VGE = 15 V, t = 1 ms
1600
A
CRM
p
DIODE
V
Repetitive peak reverse voltage
Implemented Forward Current
750
800
V
A
A
A
RRM
I
FN
(1)
I
F
Continuous Forward Current, Tv
= 175°C, T = 65°C, ref. heatsink
420
Jmax
F
I
Repetitive Peak Forward Current, t = 1 ms
1600
FRM
p
2
2
I t value
Surge current capability, V = 0 V, t = 10 ms, Tv = 150°C
20000
18000
A s
R
p
J
T
= 175°C
VJ
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. Verified by characterization, not by test.
THERMAL CHARACTERISTICS (Verified by characterization, not by test.)
Symbol
Parameter
Min
Typ
Max
Unit
°C/W
°C/W
(3)
IGBT.R
Effective Rth, Junction to Case
0.05
0.07
th,J−C
IGBT.R
Effective Rth, Junction to Fluid, l
= 6 W/m−K, F = 660 N
0.128
th,J−F
TIM
10 L/min, 65°C, 50/50 EGW, Ref. Heatsink
(3)
Diode.R
Diode.R
Effective Rth, Junction to Case
0.07
0.09
°C/W
°C/W
th,J−C
Effective Rth, Junction to Fluid, l
= 6 W/m−K, F = 660 N
0.186
th,J−F
TIM
10 L/min, 65°C, 50/50 EGW, Ref. Heatsink
3. For the measurement point of case temperature (Tc), DBC discoloration, picker circle print is allowed, please refer to the VE−Trac Dual
assembly guide for additional details about acceptable DBC surface finish.
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VE−Tract Dual Gen II NVG800A75L4DSB2
CHARACTERISTICS OF IGBT (Tvj = 25°C, Unless Otherwise Specified)
Parameters
Conditions
Min
Typ
Max
Unit
V
CESAT
Collector to Emitter Saturation
Voltage
(Terminal)
V
GE
= 15 V, I = 600 A, Tv = 25°C
−
1.30
1.42
1.44
1.69
V
C
J
Tv = 150°C
J
Tv = 175°C
J
V
V
= 15 V, I = 800 A, Tv = 25°C
1.43
1.63
1.66
GE
C
J
Tv = 150°C
J
Tv = 175°C
J
I
Collector to Emitter Leakage
Current
= 0, V = 750 V
Tv = 25°C
J
−
−
−
8
1
−
mA
mA
CES
GE
CE
Tv = 175°C
J
I
Gate – Emitter Leakage Current
Threshold Voltage
V
V
V
= 0, V
=
20 V
−
4.5
−
−
5.5
1.7
2
400
6.5
−
nA
V
GES
CE
GE
V
th
V
, I = 500 mA
CE= GE
C
Q
Total Gate Charge
−8 to 15 V, V = 400 V
mC
W
G
GE=
CE
R
C
Internal gate resistance
Input Capacitance
−
−
Gint
C
V
CE
V
CE
V
CE
= 30 V, V = 0 V, f = 100 KHz
−
43
−
nF
nF
nF
ns
ies
GE
Output Capacitance
= 30 V, V = 0 V, f = 100 KHz
−
1.48
0.19
−
oes
GE
C
Reverse Transfer Capacitance
Turn on delay, inductive load
= 30 V, V = 0 V, f = 100 KHz
−
−
res
GE
T
I
C
= 600 A, V = 400 V
= +15/−8 V
Tv = 25°C
−
377
382
382
−
d.on
CE
J
V
GE
Tv = 150°C
J
Rg.on = 4.7 W
Tv = 175°C
J
T
Rise time, inductive load
Turn off delay, inductive load
Fall time, inductive load
I
V
= 600 A, V = 400 V
Tv = 25°C
−
−
−
−
104
127
132
−
−
−
−
ns
ns
ns
mJ
r
C
CE
J
= +15/−8 V
Tv = 150°C
GE
J
Rg.on = 4.7 W
Tv = 175°C
J
T
I
C
= 600 A, V = 400 V
Tv = 25°C
917
1042
1075
d.off
CE
J
V
= +15/−8 V
Tv = 150°C
GE
J
Rg.off = 15 W
Tv = 175°C
J
T
I = 600 A, V = 400 V
Tv = 25°C
129
199
212
f
C
CE
J
V
= +15/−8 V
Tv = 150°C
GE
J
Rg.off = 15 W
Tv = 175°C
J
E
ON
Turn−On Switching Loss (including
diode reverse recovery loss)
I = 600 A, V = 400 V, V = +15/−8 V,
C CE GE
Ls = 20 nH, Rg.on = 4,7 W
di/dt (Tv = 25°C) = 4.77 A/ns
J
J
di/dt (Tv = 175°C) = 3.78 A/ns
Tv = 25°C
J
22.93
35.87
37.70
Tv = 150°C
J
Tv = 175°C
J
E
OFF
Turn−Off Switching Loss
I
= 600 A, V = 400 V, V = +15/−8 V,
−
−
mJ
C
CE
GE
Ls = 20 nH, Rg.off = 15 W
dv/dt (Tv = 25°C) = 2.79 V/ns
J
J
dv/dt (Tv = 175°C) = 2.05 V/ns
Tv = 25°C
J
33.57
47.30
49.09
Tv = 150°C
J
Tv = 175°C
J
E
SC
Minimum Short Circuit Energy
Withstand
V
GE
= 15 V, V = 400 V
J
CC
Tv = 25°C
Tv = 175°C
J
5
J
5
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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VE−Tract Dual Gen II NVG800A75L4DSB2
CHARACTERISTICS OF INVERSE DIODE (T = 25°C, Unless Otherwise Specified)
VJ
Parameters
Conditions
= 0 V, I = 600 A,
Min
Typ
Max
Unit
V
F
Diode Forward Voltage (Terminal)
V
V
Tv = 25°C
−
1.39
1.36
1.34
1.80
V
GE
C
J
Tv = 150°C
J
Tv = 175°C
J
= 0 V, I = 800 A,
Tv = 25°C
1.49
1.48
1.47
GE
C
J
Tv = 150°C
J
Tv = 175°C
J
E
Reverse Recovery Energy
Recovered Charge
I = 600 A, V = 400 V, V = −8 V,
−
−
−
−
−
−
mJ
mC
A
rr
F
R
GE
Rg.on = 4.7 W , −di/dt = 3.12 A/ns (175°C)
Tv = 25°C
6.05
14.89
17.12
J
Tv = 150°C
J
Tv = 175°C
J
Q
I = 600 A, V = 400 V, V = −8 V,
F R GE
Rg.on = 4.7 W , −di/dt = 3.12 A/ns (175°C)
RR
Tv = 25°C
17.25
44.69
52.25
J
Tv = 150°C
J
Tv = 175°C
J
Irr
Peak Reverse Recovery Current
I = 600 A, V = 400 V, V = −8 V,
F R GE
Rg.on = 4.7 W , −di/dt = 3.12 A/ns (175°C)
Tv = 25°C
222
311
325
J
Tv = 150°C
J
Tv = 175°C
J
SENSOR CHARACTERISTICS (T = 25°C, Unless Otherwise Specified)
VJ
Parameters
Conditions
Min
Typ
Max
Unit
T
sense
Temperature sense
I = 1 mA,
F
Tv = 25°C
2.5
1.7
1.5
V
J
Tv = 150°C
J
Tv = 175°C
J
I
Current sense
R
= 10 W
I
C
I
C
I
C
= 1600 A
= 800 A
= 100 A
505
269
50
mV
sense
shunt
4. Measured at chip level
ORDERING INFORMATION
Part Number
Package
Shipping
NVG800A75L4DSB2
AHPM15−CEC Module Case MODHV
(Pb−Free)
18 Units / 3x Tube
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VE−Tract Dual Gen II NVG800A75L4DSB2
TYPICAL CHARACTERISTICS
1600
1600
1400
1200
1000
800
T = 25°C
J
V
GE
= 15 V
V
CE
= 20 V
1400
1200
1000
800
T = 175°C
J
T = 150°C
J
600
600
T = 150°C
J
400
400
200
0
200
0
T = 175°C
J
T = 25°C
J
0
0.5
1.0
1.5
2.0
2.5
3.0
4
6
8
10
12
V
CE
(V)
V
GE
(V)
Figure 1. IGBT Output Characteristic
Figure 2. IGBT Transfer Characteristic
1600
1400
1200
1000
800
1600
1400
1200
1000
800
V
GE
= 13 V
V
GE
= 13 V
V
V
GE
= 17 V
V
= 17 V
GE
V
= 11 V
= 11 V
= 9 V
GE
GE
V
GE
= 15 V
V
GE
= 15 V
V
GE
V
= 9 V
GE
600
600
400
400
200
0
200
0
T = 175°C
T = 25°C
J
J
0
1
2
3
4
5
0
1
2
3
4
5
V
CE
(V)
V
CE
(V)
Figure 3. IGBT Output Characteristic, 255C
Figure 4. IGBT Output Characteristic, 1755C
15
10
5
100
10
V
= 400 V,
= 400 A,
= 25°C
CE
C
ies
I
C
T
VJ
Q
G
V
= 0 V,
= 25°C
GE
T
VJ
f = 100 KHz
0
C
oes
1
−5
−10
C
res
0.1
0
0.5
1.0
1.5
2.0
2.5
0
100
200
V
300
400
500
Q
(mC)
(V)
G
CE
Figure 5. Gate Charge Characteristics
Figure 6. Capacitance Characteristics
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VE−Tract Dual Gen II NVG800A75L4DSB2
TYPICAL CHARACTERISTICS
80
70
60
V
= +15/−8 V,
= 4.7 W
= 400 V
V
I
= +15/−8 V,
= 600 A,
= 400 V
Eon, T = 175°C
J
GE
GE
R
V
70
60
50
40
30
Gon
C
V
CE
CE
Eon, T = 150°C
Eon, T = 175°C
J
J
50
40
30
20
Eon, T = 150°C
J
Eon, T = 25°C
J
Eon, T = 25°C
J
20
10
0
10
0
0
5
10
(W)
15
20
100 200
300
400
500
(A)
600
700
800
I
C
R
Gon
Figure 7. Eon vs. IC
Figure 8. EON vs. RGon
70
60
50
40
30
20
60
50
Eoff, T = 175°C
V
R
= +15/−8 V,
J
GE
Eoff, T = 175°C
= 15 W
J
Goff
V
CE
= 400 V
Eoff, T = 150°C
J
40
30
20
10
0
Eoff, T = 25°C
J
Eoff, T = 25°C
J
V
I
= +15/−8 V,
= 600 A,
= 400 V
GE
Eoff, T = 150°C
J
C
10
0
V
CE
100 200
300
400
500
(A)
600
700
800
10
15
20
(W)
25
30
I
C
R
Goff
Figure 9. Eoff vs. IC
Figure 10. Eoff vs. RGoff
10000
1000
100
10
10000
1000
T
, T = 175°C
T
, T = 25°C
J
d.off
J
d.off
T
, T = 175°C
J
T
d.on
, T = 25°C
J
d.on
T , T = 175°C
f
J
T , T = 25°C
f
J
100
T , T = 175°C
r
J
T , T = 25°C
r
J
V
R
R
= +15/−8 V,
V
R
R
= +15/−8 V,
GE
GE
10
1
= 4.7 W
= 15 W
= 4.7 W
= 15 W
Gon
Goff
Gon
Goff
V
CE
= 400 V
V
= 400 V
CE
1
100 200
300
400
500
(A)
600
700
800
100 200
300
400
500
I (A)
C
600
700
800
I
C
Figure 11. IGBT Switching Times vs. IC,
Figure 12. IGBT Switching Times vs. IC,
T
VJ = 255C
T
VJ = 1755C
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VE−Tract Dual Gen II NVG800A75L4DSB2
TYPICAL CHARACTERISTICS
1800
1600
1
10 L/min
Tf = 65°C
50/50 EGW
Ref. Heatsink
1400
1200
1000
800
Module
Chip
0.1
600
0.01
400
V
GE
= +15/−8 V
R
= 15 W
= 175°C
Goff
200
0
T
VJ
0.001
0.0001 0.001
0.01
TIME (s)
0.1
1
10
0
200
400
(V)
600
800
V
CE
Figure 13. Reverse Bias Safe Operating Area
Figure 14. IGBT Transient Thermal Impedance
1600
1400
1200
1000
800
20
18
16
14
12
10
8
E , T = 175°C
R
= 4.7 W
= 400 V
rr
J
Gon
V
CE
E , T = 150°C
rr
J
E , T = 25°C
rr
J
600
T = 150°C
6
4
2
0
J
400
200
0
T = 175°C
J
T = 25°C
J
0
0.5
1.0
1.5
2.0
2.5
3.0
100 200
300
400
I
500
600
700
800
V
F
(V)
(A)
F
Figure 15. Diode Forward Characteristic
Figure 16. Diode Switching Losses vs. IF
1
30
25
20
15
10
10 L/min
Tf = 65°C
50/50 EGW
Ref. Heatsink
I
V
= 600 A
F
= 400 V
CE
0.1
E , T = 175°C
rr
J
0.01
E , T = 150°C
rr
J
E , T = 25°C
5
0
rr
J
0.001
0.0001 0.001
0.01
TIME (s)
0.1
1
10
0
5
10
15
R
(W)
Gon
Figure 17. Diode Switching Losses vs. RGon
Figure 18. Diode Transient Thermal Impedance
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VE−Tract Dual Gen II NVG800A75L4DSB2
TYPICAL CHARACTERISTICS
3.5
3.0
2.5
2.0
1.5
1.0
900
I
= 1 mA
bias
800
700
600
500
400
300
200
R
= 10 W
shunt
175°C
25°C
150°C
0.5
0
100
0
−40
10
60
110
160
0
400
800
(A)
1200
1600
TEMPERATURE (°C)
I
C
Figure 19. Temperature Sensor Characteristics
Figure 20. Current Sensor Characteristic
775
750
725
700
675
650
Verified by characterization /
design, not by test
−40
20
80
(°C)
140
200
T
vj
Figure 21. Maximum Allowed VCE
General Note: These are preliminary values measured from a small number of DV units. Values will be updated based on higher
quantity of PV measurements.
VE−Trac is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
Gen II DSC AHPM15−CEC
CASE MODHV
ISSUE O
DATE 16 DEC 2021
#15
#3
#1
#2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON39931H
Gen II DSC AHPM15−CEC
PAGE 1 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2021
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
Gen II DSC AHPM15−CEC
CASE MODHV
ISSUE O
DATE 16 DEC 2021
XXXX = Specific Device Code
ZZZ = Assembly Lot Code
AT
Y
= Assembly & Test Location
= Year
WW = Work Week
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON39931H
Gen II DSC AHPM15−CEC
PAGE 2 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2021
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onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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