NVH082N65S3F [ONSEMI]
Single N-Channel Power MOSFET SUPERFET® III, FRFET®, 650 V , 40 A, 82 mΩ, TO-247;
| 型号： | NVH082N65S3F |
| 厂家： | 
ONSEMI |
| 描述： | Single N-Channel Power MOSFET SUPERFET® III, FRFET®, 650 V , 40 A, 82 mΩ, TO-247 |
| 文件： | 总12页 (文件大小：294K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MOSFET – Power,
N-Channel, SUPERFET) III,
FRFET)
650 V, 40 A, 82 mW
NVH082N65S3F
Description
www.onsemi.com
SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate.
Consequently, SUPERFET III MOSFET is very suitable for the
various power system for miniaturization and higher efficiency.
SUPERFET III FRFET MOSFET’s optimized reverse recovery
performance of body diode can remove additional component and
improve system reliability.
V
R
MAX
I MAX
D
DSS
DS(ON)
650 V
82 mW @ 10 V
40 A
D
G
Features
• 700 V @ T = 150°C
J
S
• Typ. R
= 64 mW
DS(on)
POWER MOSFET
• Ultra Low Gate Charge (Typ. Q = 81 nC)
g
• Low Effective Output Capacitance (Typ. C
• 100% Avalanche Tested
= 722 pF)
oss(eff.)
• AEC−Q101 Qualified and PPAP Capable
Applications
G
D
S
• Automotive On Board Charger HEV−EV
• Automotive DC/DC converter for HEV−EV
TO−247−3LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
NVH
082N65S3F
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
NVH082N65S3F
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
November, 2020 − Rev. 0
NVH082N65S3F/D
NVH082N65S3F
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)
C
Symbol
Parameter
Value
650
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
− DC
30
V
− AC (f > 1 Hz)
30
I
D
Drain Current
− Continuous (T = 25°C)
40
A
C
− Continuous (T = 100°C)
25.5
100
C
I
Drain Current
− Pulsed (Note 1)
A
DM
E
Single Pulsed Avalanche Energy (Note 2)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
510
mJ
AS
AR
E
3.13
100
mJ
dv/dt
V/ns
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
50
P
(T = 25°C)
313
W
W/°C
°C
D
C
− Derate Above 25°C
2.5
T , T
Operating and Storage Temperature Range
−55 to +150
300
J
STG
T
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I = 4.8 A, R = 25 W, starting T = 25°C.
AS
G
J
3. I ≤ 20 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
0.4
Unit
R
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
_C/W
q
JC
JA
R
40
q
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
N/A
Quantity
NVH082N65S3F
NVH082N65S3F
TO−247
Tube
N/A
30 Units
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2
NVH082N65S3F
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
650
700
−
−
−
−
−
−
V
V
V
V
I
= 0 V, I = 1 mA, T = 25_C
DSS
GS
D
J
= 0 V, I = 10 mA, T = 150_C
GS
D
J
DBV
/ DT
Breakdown Voltage Temperature
Coefficient
= 20 mA, Referenced to 25_C
0.7
V/_C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
= 650 V, V = 0 V
−
−
−
−
127
−
10
−
mA
DSS
GS
= 520 V, T = 125_C
C
I
Gate to Body Leakage Current
=
30 V, V = 0 V
100
nA
GSS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
GS
V
GS
V
DS
= V , I = 1 mA
3.0
−
−
5.0
82
−
V
mW
S
GS(th)
DS(on)
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
= 10 V, I = 20 A
64
24
D
g
FS
= 20 V, I = 20 A
−
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 400 V, V = 0 V, f = 1 MHz
−
−
−
−
−
−
−
−
3410
70
−
−
−
−
−
−
−
−
pF
pF
pF
pF
nC
nC
nC
W
iss
DS
GS
C
Output Capacitance
oss
C
Effective Output Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
V
DS
V
DS
V
DS
= 0 V to 400 V, V = 0 V
722
126
81
oss(eff.)
GS
C
= 0 V to 400 V, V = 0 V
GS
oss(er.)
Q
= 400 V, I = 20 A, V = 10 V
D GS
g(tot)
(Note 4)
Q
24
gs
Q
32
gd
ESR
f = 1 MHz
1.9
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
V
= 400 V, I = 20 A,
−
−
−
−
31
29
76
16
−
−
−
−
ns
ns
ns
ns
d(on)
DD
GS
D
= 10 V, R = 4.7 W
g
t
r
(Note 4)
t
d(off)
t
f
SOURCE-DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Source to Drain Diode Forward Current
Maximum Pulsed Source to Drain Diode Forward Current
−
−
−
−
−
−
−
40
100
1.3
−
A
A
S
I
SM
V
SD
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
V
= 0 V, I = 20 A
−
V
GS
SD
t
rr
= 0 V, I = 20 A,
108
410
ns
nC
GS
SD
dI /dt = 100 A/ms
F
Q
Reverse Recovery Charge
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
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3
NVH082N65S3F
TYPICAL CHARACTERISTICS
100
100
8.0 V
V
GS
= 10 V
V
GS
= 10 V
250 ms Pulse Test
= 25°C
250 ms Pulse Test
= 150°C
8.0 V
T
T
C
C
7.0 V
6.5 V
7.0 V
6.5 V
6.0 V
6.0 V
5.5 V
10
10
5.5 V
1
1
0.1
1
10
20
0.1
1
10
V
DS
, DRAIN−SOURCE VOLTAGE (V)
V
DS
, DRAIN−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
255C
Figure 2. On−Region Characteristics
1505C
100
0.2
V
DS
= 20 V
250 ms Pulse Test
V
= 10 V
= 20 V
GS
0.1
10
T = 25°C
J
V
GS
T = 150°C
T = −55°C
J
J
1
0
2
3
4
5
6
7
8
0
20
40
60
80
100
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. Transfer Characteristics
Figure 4. On−Resistance Variation vs. Drain
Current and Gate Voltage
100K
10K
1K
100
10
1
V
= 20 V
DS
250 ms Pulse Test
C
iss
T = 150°C
J
C
oss
100
10
T = 25°C
J
V
= 0 V
GS
0.1
f = 1 MHz
C
rss
C
C
C
= C + C (C = shorted)
gs gd ds
iss
0.01
1
= C + C
oss
rss
ds
gd
= C
gd
T = −55°C
J
0.001
0.1
0
0.4
0.8
1.2
1.6
0.1
1
10
100
1K
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. Body Diode Forward Voltage
Figure 6. Capacitance Characteristics
Variation vs. Source Current and Temperature
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4
NVH082N65S3F
TYPICAL CHARACTERISTICS
10
8
1.2
V
DD
= 130 V
V
= 0 V
= 10 mA
GS
I
D
= 20 A
V
DD
= 400 V
I
D
1.1
1.0
6
4
0.9
0.8
2
0
0
20
40
60
80
100
175
150
−75
−25
25
75
125
175
Q , TOTAL GATE CHARGE (nC)
T , JUNCTION TEMPERATURE (°C)
J
G
Figure 7. Gate Charge Characteristics
Figure 8. Breakdown Voltage Variation vs.
Temperature
200
100
3.0
2.5
2.0
1.5
1.0
30 ms
I
V
= 20 A
= 10 V
D
GS
100 ms
10
Operation in this Area
is Limited by R
1 ms
DS(on)
10 ms
DC
1
T
= 25°C
T = 150°C
Single Pulse
C
0.5
0
J
0.1
−75
−25
25
75
125
1
10
100
1000
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−SOURCE VOLTAGE (V)
Figure 9. On−Resistance Variation vs.
Figure 10. Maximum Safe Operating Area
Temperature
50
40
30
20
20
15
10
5
0
10
0
25
50
75
100
125
0
100
200
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
300
400
500
600
T , CASE TEMPERATURE (°C)
V
C
Figure 11. Maximum Drain Current vs. Case
Temperature
Figure 12. EOSS vs. Drain−to−Source Voltage
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5
NVH082N65S3F
TYPICAL CHARACTERISTICS
1.2
1.0
0.8
0.6
0.4
1000
100
Current Limited Max 100 A
0.2
0
10
0
25
50
75
100
125
150
0.00001 0.0001 0.001
0.01
0.1
1
10
T , CASE TEMPERATURE (°C)
C
t, RECTANGULAR PULSE (s)
Figure 13. Normalized Power Dissipation vs.
Case Temperature
Figure 14. Peak Current Capability
400
300
200
1.2
1.1
1.0
0.9
0.8
I
= 20 A
I
D
= 4 mA
D
T = 150°C
A
100
0
T = 25°C
A
0.7
0.6
6
7
8
9
10
−75
−25
25
75
125
175
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
J
Figure 15. RDS(on) vs. Gate Voltage
Figure 16. Normalized Gate Threshold Voltage
vs. Temperature
100
Starting T = 25°C
J
Starting T = 125°C
10
J
If R = 0
AV
t
= (L)(I )/(1.3*RATED BV
− V
)
AS
DSS
DD
If R =/ 0
t
= (L/R)ln[(I
*R)/(1.3*RATED BV
− V ) +1]
DSS DD
AV
AS
1
0.0001
0.001
0.01
0.1
1
10
t , TIME IN AVALANCHE (ms)
AV
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 17. Unclamped Inductive Switching Capability
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6
NVH082N65S3F
TYPICAL CHARACTERISTICS
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Notes:
(t) = r(t) x R
P
DM
0.01
Z
q
0.01
q
JC
JC
R
= 0.4°C/W
q
JC
Peak T = P
Duty Cycle, D = t /t
x Z
(t) + T
JC C
t
q
Single Pulse
J
DM
1
t
1
2
2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 18. Transient Thermal Response
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7
NVH082N65S3F
V
GS
R
Q
g
L
V
DS
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 19. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
t
d(off)
t
r
t
f
d(on)
t
on
t
off
Figure 20. Resistive Switching Test Circuit & Waveforms
L
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 21. Unclamped Inductive Switching Test Circuit & Waveforms
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8
NVH082N65S3F
+
DUT
V
DS
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 22. Peak Diode Recovery dv/dt Test Circuit & Waveforms
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9
NVH082N65S3F
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
P1
A
E
P
A
D2
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
(2X) e
DIM
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
A
A1
A2
b
b2
b4
c
D
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
E1 12.81
~
~
E2
e
4.96 5.08 5.20
5.56
~
~
L
L1
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
P
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
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10
NVH082N65S3F
SUPERFET and FRFET are a registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United
States and/or other countries.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
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