NVMFS5C628N [ONSEMI]
MOSFET - Power, Single N-Channel;
| 型号： | NVMFS5C628N |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET - Power, Single N-Channel |
| 文件： | 总6页 (文件大小：249K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET - Power, Single
N-Channel
60 V, 3.0 mW, 150 A
NVMFS5C628N
Features
• Small Footprint (5x6 mm) for Compact Design
www.onsemi.com
• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
• NVMFS5C628NWF − Wettable Flank Option for Enhanced Optical
Inspection
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
60 V
3.0 mW @ 10 V
150 A
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
D (5)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
V
DSS
G (4)
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
150
110
110
56
A
C
D
S (1,2,3)
N−CHANNEL MOSFET
q
JC
T
C
(Notes 1, 3)
Steady
State
Power Dissipation
T
C
P
W
A
D
R
(Note 1)
q
JC
T
C
= 100°C
MARKING
DIAGRAM
Continuous Drain
Current R
T = 25°C
A
I
D
28
q
JA
D
T = 100°C
A
20
(Notes 1, 2, 3)
1
Steady
State
S
S
S
G
D
D
Power Dissipation
T = 25°C
A
P
3.7
1.9
900
W
D
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
XXXXXX
AYWZZ
R
(Notes 1, 2)
q
JA
T = 100°C
A
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
D
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
J
stg
XXXXXX = 5C628N
XXXXXX = (NVMFS5C628N) or
XXXXXX = 628NWF
+175
Source Current (Body Diode)
I
S
120
565
A
XXXXXX = (NVMFS5C628NWF)
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
A
Y
= Assembly Location
= Year
Energy (I
= 9 A)
L(pk)
W
ZZ
= Work Week
= Lot Traceability
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
1.3
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
40
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
September, 2019 − Rev. 0
NVMFS5C628N/D
NVMFS5C628N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
60
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
22
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25°C
10
DSS
GS
DS
J
V
= 60 V
mA
T = 125°C
J
250
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Gate Resistance
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 135 mA
2.0
4.0
3.0
V
mV/°C
mW
S
GS(TH)
DS
D
V
/T
J
−7.7
2.3
GS(TH)
R
V
GS
= 10 V
I = 27 A
D
DS(on)
g
FS
V
= 15 V, I = 27 A
110
1.0
DS
D
R
T = 25°C
A
W
G
CHARGES AND CAPACITANCES
Input Capacitance
C
2630
1680
13
ISS
Output Capacitance
C
V
V
= 0 V, f = 1 MHz, V = 30 V
pF
OSS
RSS
GS
DS
Reverse Transfer Capacitance
Total Gate Charge
C
Q
34
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Q
8
G(TH)
nC
V
Q
12.8
3.8
4.8
= 10 V, V = 48 V; I = 27 A
GS
GD
GP
GS
DS
D
Q
V
Plateau Voltage
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
16
5.8
25
d(ON)
Rise Time
t
r
V
= 10 V, V = 48 V,
DS
GS
D
ns
V
I
= 27 A, R = 2.5 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
6.2
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.8
0.67
64
1.2
SD
RR
J
V
S
= 0 V,
GS
I
= 27 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
t
a
32
ns
V
GS
= 0 V, dIs/dt = 100 A/ms,
I
S
= 14 A
Discharge Time
t
b
32
Reverse Recovery Charge
Q
75
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NVMFS5C628N
TYPICAL CHARACTERISTICS
150
135
120
105
90
150
120
V
GS
= 10 V to 6 V
90
5.0 V
75
T = 25°C
J
60
60
45
4.5 V
4.0 V
30
30
0
15
0
T = 125°C
T = −55°C
J
J
0
1
2
3
4
5
0
1
2
3
4
5
6
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
12
10
8
8
7
6
5
4
3
2
T = 25°C
T = 25°C
D
J
J
I
= 27 A
6
4
V
= 10 V
140
GS
2
0
1
0
5
6
7
8
9
10
0
20
40
60
80
100
120
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
1M
100K
10K
1K
V
I
= 10 V
= 27 A
GS
2.0
1.5
T = 175°C
J
D
T = 125°C
J
T = 85°C
J
100
1.0
0.5
T = 25°C
J
10
1
−50 −25
0
25
50
75 100 125 150 175
5
15
25
35
45
55
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVMFS5C628N
TYPICAL CHARACTERISTICS
10K
1K
10
V
= 48 V
= 27 A
DS
C
9
8
7
6
5
4
3
ISS
I
D
T = 25°C
J
C
OSS
Q
Q
GD
GS
100
10
1
V
= 0 V
GS
2
1
0
C
T = 25°C
RSS
J
f = 1 MHz
10
0
20
30
40
50
60
0
5
10
15
20
25
30
35
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
100
10
V
GS
= 0 V
100
t
t
d(off)
d(on)
10
1
1
t
f
V
V
= 10 V
= 48 V
= 27 A
GS
t
r
T = 125°C
J
DS
I
D
T = 25°C
J
T = −55°C
J
0.1
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.6
0.7
0.8
0.9
1.0
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
100
10
500 ms
1 ms
10 ms
T (initial)= 25°C
J
10
T
V
= 25°C
≤ 10 V
C
T (initial)= 100°C
J
GS
1
Single Pulse
R
Limit
0.1
DS(on)
Thermal Limit
Package Limit
1
0.01
1.E−05
1.E−04
1.E−03
1.E−02
0.1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T , TIME IN AVALANCHE (s)
AV
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NVMFS5C628N
TYPICAL CHARACTERISTICS
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVMFS5C628NT1G
5C628N
DFN5
1500 / Tape & Reel
1500 / Tape & Reel
(Pb−Free)
NVMFS5C628NWFT1G
628NWF
DFN5
(Pb−Free, Wettable Flanks)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NVMFS5C628N
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
DETAIL A
PLANE
0.10
0.10
C
C
3.00
0
3.80
q
−−−
12
A
_
_
RECOMMENDED
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
SOLDERING FOOTPRINT*
SIDE VIEW
DETAIL A
2X
0.495
4.560
5. DRAIN
2X
8X b
A B
1.530
0.10
0.05
C
c
e/2
e
2X
0.475
L
1
4
3.200
1.330
4.530
K
E2
2X
0.905
PIN 5
(EXPOSED PAD)
M
L1
1
0.965
4X
D2
BOTTOM VIEW
G
1.000
1.270
PITCH
DIMENSIONS: MILLIMETERS
4X
0.750
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NVMFS5C628N/D
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