NVMYS007N10MCLTWG [ONSEMI]
MOSFET – Power, Single N-Channel 100 V, 7 mΩ, 83 A;
| 型号： | NVMYS007N10MCLTWG |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET – Power, Single N-Channel 100 V, 7 mΩ, 83 A |
| 文件： | 总6页 (文件大小：225K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
N-Channel
100 V, 7 mW, 83 A
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
7 mW @ 10 V
100 V
83 A
10 mW @ 4.5 V
NVMYS007N10MCL
D (5)
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
G (4)
G
• LFPAK4 Package, Industry Standard
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free
and are RoHS Compliant
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
100
20
Unit
V
D
V
DSS
007N10
MCL
AWLYW
Gate−to−Source Voltage
V
GS
V
Continuous Drain
T
= 25°C
= 100°C
= 25°C
I
83
A
LFPAK4
CASE 760AB
C
D
Current R
(Note 1)
q
JC
T
C
59
Steady
State
1
Power Dissipation
(Note 1)
T
C
P
107
54
W
A
D
S
S
S
G
R
q
JC
T
C
= 100°C
007N10MCL = Specific Device Code
A
= Assembly Location
= Wafer Lot
Continuous Drain
Current R
T = 25°C
I
16
A
D
WL
Y
q
JA
= Year
T = 100°C
A
11
(Notes 1, 2)
Steady
State
W
= Work Week
Power Dissipation
T = 25°C
A
P
3.8
1.9
539
W
D
R
(Notes 1, 2)
q
JA
T = 100°C
A
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
Source Current (Body Diode)
I
S
82
A
Single Pulse Drain−to−Source Avalanche
E
AS
671
mJ
Energy (I
= 4.8 A)
L(pk)
Lead Temperature Soldering Reflow for Solder-
ing Purposes (1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Value
1.40
40
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using 1 in pad size, 2 oz. Cu pad.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
May, 2022 − Rev. 0
NVMYS007N10MCL/D
NVMYS007N10MCL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
100
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
59
mV/°C
(BR)DSS
T
J
Zero Gate Voltage Drain Current
I
T = 25°C
1.0
100
100
mA
DSS
J
V
DS
= 0 V,
GS
V
= 100 V
T = 125°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
Gate Threshold Voltage
V
V
GS
= V , I = 141 mA
1
3
V
GS(TH)
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
5.3
5.8
7.9
100
mV/°C
mW
GS(TH)
J
R
V
= 10 V, I = 25 A
7
DS(on)
GS
D
V
GS
= 4.5 V, I = 20 A
10
D
Forward Transconductance
CHARGES & CAPACITANCES
Input Capacitance
g
FS
V
= 10 V, I = 25 A
S
DS
D
C
2700
950
14
17
37
4
pF
ISS
Output Capacitance
C
C
V
= 0 V, f = 1 MHz, V = 50 V
DS
OSS
RSS
GS
Reverse Transfer Capacitance
Total Gate Charge
Q
V
GS
= 4.5 V, V = 50 V, I = 25 A
nC
G(TOT)
Q
G(TOT)
DS
D
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
G(TH)
Q
7
V
GS
= 10 V, V = 50 V, I = 25 A
DS D
GS
GD
GP
Q
V
4
3
V
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
t
12.2
6.5
ns
d(ON)
Rise Time
t
r
V
= 10 V, V = 50 V,
DS
GS
D
I
= 25 A, R = 6.0 W
G
Turn−Off Delay Time
t
45.7
11.5
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.84
0.72
48
1.3
V
SD
RR
J
V
S
= 0 V,
GS
I
= 25 A
T = 125°C
J
Reverse Recovery Time
Reverse Recovery Charge
Charge Time
t
ns
nC
ns
ns
Q
37
RR
V
= 0 V, dI /dt = 100 A/ms,
S
GS
I
S
= 13 A
t
22
a
Discharge Time
t
26
b
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures.
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2
NVMYS007N10MCL
TYPICAL CHARACTERISTICS
120
100
80
120
3.4 V
V
DS
= 10 V
100
80
3.2 V
3.0 V
V
GS
= 10 to 3.6 V
2.8 V
60
60
T = 25°C
J
2.6 V
2.4 V
40
40
20
0
20
0
T = 150°C
T = −55°C
J
J
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
50
45
40
35
30
25
10
9
T = 25°C
J
T = 25°C
D
J
I
= 25 A
V
V
= 4.5 V
= 10 V
GS
8
7
20
15
10
5
6
5
GS
0
1
2
3
4
5
6
7
8
9
10 11
5
7
9
11 13 15 17 19 21 23 25
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.5
2.0
1.5
10000
1000
100
10
V
= 10 V
= 25 A
GS
T = 175°C
I
D
J
T = 150°C
J
T = 125°C
J
1
T = 85°C
J
0.1
1.0
0.5
0.01
0.001
T = 25°C
J
0.0001
−50 −25
0
25
50
75 100 125 150 175
10 20
30
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
40
50
60
70
80
90 100
T , JUNCTION TEMPERATURE (°C)
V
J
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVMYS007N10MCL
TYPICAL CHARACTERISTICS
10000
1000
100
10
C
9
8
7
6
5
4
3
ISS
C
OSS
Q
Q
GD
GS
10
1
T = 25°C
D
J
V
= 0 V
2
1
0
GS
I
= 25 A
T = 25°C
J
C
RSS
V
DS
= 50 V
f = 1 MHz
0
5
10
15
20
25
30
35
40
0
10 20 30 40
50 60 70 80
90 100
Q , TOTAL GATE CHARGE (nC)
G
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
1000
100
V
V
I
= 10 V
= 50 V
= 25 A
V
GS
= 0 V
GS
DS
t
D
T = 150°C
J
d(off)
t
t
10
f
r
T = 125°C
J
t
d(on)
T = 25°C
J
10
1
T = 175°C
T = −55°C
J
J
1
1
10
R , GATE RESISTANCE (W)
100
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
, SOURCE−TO−DRAIN VOLTAGE (V)
V
SD
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
100
10
T
= 25°C
J(initial)
10
T
= 25°C
C
Single Pulse
10 ms
0.5 ms
1 ms
V
GS
≤ 10 V
T
= 125°C
J(initial)
1
R
Limit
DS(on)
Thermal Limit
Package Limit
10 ms
0.1
1
0.1
1
10
100
1000
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
t , TIME IN AVALANCHE (s)
AV
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NVMYS007N10MCL
TYPICAL CHARACTERISTICS
100
10
1
Duty Cycle = 0.5
0.1
0.2
0.05
0.02
0.01
0.1
Single Pulse
0.00001
0.01
0.000001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (sec)
Figure 13. Transient Thermal Impedance
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVMYS007N10MCLTWG
007N10MCL
LFPAK4
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NVMYS007N10MCL
PACKAGE DIMENSIONS
LFPAK4 5x6
CASE 760AB
ISSUE C
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