NVMYS1D6N04CLT1G [ONSEMI]
Power MOSFET 40V, 1.07 mΩ, 280 A, Single N−Channel;
| 型号： | NVMYS1D6N04CLT1G |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET 40V, 1.07 mΩ, 280 A, Single N−Channel |
| 文件： | 总7页 (文件大小：229K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
N-Channel
40 V, 1.6 mW, 185 A
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
1.6 mW @ 10 V
2.4 mW @ 4.5 V
40 V
185 A
NVMYS1D6N04CL
D (5)
Features
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
G
• AEC−Q101 Qualified and PPAP Capable
• LFPAK4 Package, Industry Standard
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
MARKING
DIAGRAM
V
DSS
Gate−to−Source Voltage
V
GS
20
V
D
Continuous Drain
Current R
Steady
State
T
= 25°C
= 100°C
= 25°C
I
185
130.7
107.1
53.6
35
A
C
D
1D6N04
CL
AWLYW
q
JC
T
C
(Notes 1, 3)
LFPAK4
CASE 760AB
Power Dissipation
T
C
P
W
A
D
R
(Note 1)
q
JC
T
C
= 100°C
1
S
S
S G
Continuous Drain
Current R
Steady
State
T = 25°C
A
I
D
1D6N04CL = Specific Device Code
q
JA
T = 100°C
A
24.8
3.8
(Notes 1, 2, 3)
A
= Assembly Location
= Wafer Lot
WL
Y
Power Dissipation
T = 25°C
A
P
W
D
= Year
R
(Notes 1, 2)
q
JA
T = 100°C
A
1.9
W
= Work Week
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
1198
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Source Current (Body Diode)
I
S
89
A
Single Pulse Drain−to−Source Avalanche
E
AS
873
mJ
Energy (I
= 14.5 A)
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
1.4
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
36.4
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
September, 2021 − Rev. 2
NVMYS1D6N04CL/D
NVMYS1D6N04CL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
40
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
V
/
20.6
200
(BR)DSS
mV/°C
Temperature Coefficient
T
J
Zero Gate Voltage Drain Current
I
T = 25°C
1
100
3
DSS
J
V
= 0 V,
GS
DS
mA
V
= 40 V
T = 175°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
V
V
= V , I = 210 mA
1
1.5
−5.0
1.16
1.7
V
GS(TH)
GS
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
J
mV/°C
mW
GS(TH)
R
V
= 10 V, I = 50 A
1.6
2.4
DS(on)
GS
D
V
= 4.5 V, I = 25 A
D
GS
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
4301
1749
46
ISS
Output Capacitance
C
OSS
C
RSS
V
V
= 0 V, f = 1 MHz, V = 25 V
pF
GS
DS
Reverse Transfer Capacitance
Total Gate Charge
Q
71
G(TOT)
Threshold Gate Charge
Gate−to−Source Gate Charge
Gate−to−Drain “Miller” Charge
Plateau Voltage
Q
1.4
11
G(TH)
nC
V
Q
= 10 V, V = 20 V; I = 50 A
GS
GD
GP
GS
DS
D
Q
V
13
2.9
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
10
12
77
29
d(ON)
Turn−On Rise Time
t
r
V
= 20 V, V = 10 V,
GS
DS
D
ns
V
I
= 50 A, R = 6 W
G
Turn−Off Delay Time
t
d(OFF)
Turn−Off Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Source−to−Drain Diode Voltage
Reverse Recovery Time
Charge Time
V
V
= 0 V, I = 25 A
0.78
49
1.2
SD
GS
SD
t
RR
t
25
ns
a
V
= 0 V, d /dt = 100 A/ms,
IS
GS
I
S
= 50 A
Discharge Time
t
24
b
Reverse Recovery Charge
Q
159
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NVMYS1D6N04CL
TYPICAL CHARACTERISTICS
400
300
200
4.0 V
5.0 V
V
= 5 V
DS
150
100
V
GS
= 6.0 V to 10 V
200
100
0
T = 25°C
J
3.0 V
50
0
T = 175°C
J
T = −55°C
J
0
0.5
1.0
1.5
2.0
2.5
1.5
2.0
2.5
3.0
3.5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
6
5
4
3
2
2.2
2.0
1.8
1.6
1.4
T = 25°C
J
T = 25°C
D
J
V
GS
= 4.5 V
I
= 50 A
V
GS
= 10 V
1
0
1.2
1.0
3
4
5
6
7
8
9
10
0
50
100
150
200
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.0
1.8
1.6
1.4
1.2
1000
100
10
V
= 10 V
= 50 A
GS
I
D
T = 175°C
J
T = 150°C
J
T = 125°C
J
1.0
0.8
0.6
1
T = 85°C
J
0.1
−100
−50
0
50
100
150
200
5
10
V
15
20
25
30
35
40
T , JUNCTION TEMPERATURE (°C)
J
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVMYS1D6N04CL
TYPICAL CHARACTERISTICS
10K
1K
10
C
Q
ISS
G(TOT)
9
8
C
OSS
7
6
5
Q
Q
GD
GS
4
3
2
1
0
100
10
C
RSS
V
= 20 V
DS
V
= 0 V
GS
T = 25°C
J
T = 25°C
J
I
D
= 50 A
f = 1 MHz
0
10
20
30
40
0
10
20
30
40
50
60
70
80
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
1000
100
10
1000
100
t
V
GS
= 0 V
d(off)
t
f
t
r
1
t
d(on)
0.1
10
1
T = 125°C
J
V
V
= 10 V
= 20 V
= 50 A
GS
0.01
DS
I
D
T = 25°C
J
T = −55°C
J
0.001
0
10
R , GATE RESISTANCE (W)
100
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10,000
1000
T
= 25°C
C
Single Pulse
≤ 10 V
V
GS
T
= 25°C
J(initial)
10 ms
100
100 ms
T
= 150°C
J(initial)
0.5 ms
10
1
10
1
R
Limit
DS(on)
Thermal Limit
Package Limit
1 ms
10 ms
0.1
1
10
100
0.001
0.01
0.1
1
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
t , TIME IN AVALANCHE (mS)
AV
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NVMYS1D6N04CL
TYPICAL CHARACTERISTICS
100
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
Single Pulse
0.001
0.0000001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVMYS1D6N04CLTWG
1D6N04CL
LFPAK4
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NVMYS1D6N04CL
PACKAGE DIMENSIONS
LFPAK4 5x6
CASE 760AB
ISSUE C
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6
NVMYS1D6N04CL
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