NVNJWS200N031LTAG [ONSEMI]
Mosfet - Power, N-Channel with ESD Protection, 30 V, 3.3 A;
| 型号： | NVNJWS200N031LTAG |
| 厂家： | 
ONSEMI |
| 描述： | Mosfet - Power, N-Channel with ESD Protection, 30 V, 3.3 A |
| 文件： | 总7页 (文件大小：187K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – Power,
N-Channel With ESD
Protection
30 V, 3.3 A
V
R
MAX
I Max
D
(BR)DSS
DS(on)
200 mW @ 4.5 V
250 mW @ 3 V
30 V
3.3 A
NVNJWS200N031L
Features
• Low R
and Low Gate Threshold
• Low Input Capacitance
DS(on)
• ESD Protected Gate
• Wettable Flank for Enhanced Optical Inspection
• AEC−Q101 Qualified and PPAP Capable
• This is a Pb−Free Device
Applications
• Low Side Load Switch
• DC−DC Converters (Buck and Boost Circuits)
MARKING
DIAGRAM
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
30
Unit
V
XXM
V
DSS
XDFNW3
CASE 521AC
Gate−to−Source Voltage
V
GS
8
V
Continuous Drain
Current (Note 1)
Steady T = 25°C
I
2.2
1.5
3.3
2.3
1.8
0.9
4.1
2.0
25
A
XX
M
= Specific Device Code
= Month Code
A
D
State
T = 100°C
A
Continuous Drain
T
C
= 25°C
Current R
(Note 1)
q
JC
T
C
= 100°C
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
Power Dissipation
(Note 1)
Steady T = 25°C
P
W
A
D
State
T = 100°C
A
Power Dissipation R
(Note 1)
T
C
= 25°C
q
JC
T
C
= 100°C
Pulsed Drain Current
t = 10 ms
p
I
A
DM
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
STG
Source Current (Body Diode)
I
S
3.4
A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
260
°C
T
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Value
83.6
Unit
Junction−to−Ambient – Steady State
Junction−to−Case – Steady State
R
°C/W
q
JA
R
36.8
q
JC
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [2 oz] including traces).
© Semiconductor Components Industries, LLC, 2023
1
Publication Order Number:
March, 2023 − Rev. 0
NVNJWS200N031L/D
NVNJWS200N031L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
30
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
I = 250 mA, ref to 25°C
D
27.4
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25°C
1.0
10
10
mA
mA
DSS
GS
DS
J
V
= 24 V
T = 85°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
I
V
= 0 V, V
= 8 V
GSS
DS
GS
V
V
= V , I = 250 mA
0.4
1.5
V
GS(TH)
GS
DS
D
Negative Threshold Temperature
Coefficient
V
/T
−3.2
mV/°C
GS(TH)
J
Drain−to−Source On Resistance
R
V
= 4.5 V, I = 1.5 A
153
185
1.28
200
250
mW
S
DS(on)
GS
D
V
= 3 V, I = 0.5 A
D
GS
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
FS
V
= 4 V, I = 0.15 A
DS D
C
89
15
pF
ISS
V
GS
= 0 V, f = 1.0 MHz,
Output Capacitance
C
C
OSS
RSS
V
DS
= 15 V
Reverse Transfer Capacitance
Total Gate Charge
8.3
1.4
0.2
0.4
0.3
Q
nC
ns
V
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Q
G(TH)
V
V
= 4.5 V, V = 15 V,
DS
GS
I
D
= 1.5 A
Q
GS
GD
Q
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
t
t
5.2
2.6
d(on)
t
r
= 4.5 V, V = 15 V,
GS
DD
I
D
= 1 A, R = 6 W
G
Turn−Off Delay Time
Fall Time
10.2
2.2
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
= 0 V,
T = 25°C
J
0.8
0.7
1.2
GS
S
I = 1 A
T = 85°C
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2
NVNJWS200N031L
TYPICAL CHARACTERISTICS
6
8
7
V
GS
= 4.5 V
V
DS
= 4 V
3.6 V
3.2 V
3.0 V
2.8 V
5
4
3
2
4.0 V
6
5
4
3
2
2.6 V
2.4 V
T = 25°C
J
1
0
1
0
T = 125°C
J
T = −55°C
J
0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
600
500
400
300
200
T = 25°C
J
T = 25°C
J
500
400
300
200
I
D
= 1.5 A
V
GS
= 3.0 V
I
D
= 0.5 A
V
GS
= 4.5 V
100
0
100
0
1.0
1.5
V
2.0
2.5
3.0
3.5
4.0
4.5
0
1
2
3
4
5
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
GS
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
3.0
10000
1000
100
10
T = 175°C
J
V
I
= 4.5 V
= 1.5 A
GS
2.5
2.0
1.5
1.0
T = 150°C
J
D
T = 125°C
J
T = 85°C
J
1
T = 25°C
J
0.5
0
0.1
0.01
−50 −25
0
25
50
75
100 125 150 175
3
6
9
12
15
18
21
24
27 30
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
www.onsemi.com
3
NVNJWS200N031L
TYPICAL CHARACTERISTICS
1000
100
4.5
V
= 15 V
DS
4.0
3.5
3.0
2.5
2.0
1.5
1.0
T = 25°C
J
I
D
= 1.5 A
C
C
ISS
Q
Q
GD
GS
OSS
10
1
C
RSS
V
= 0 V
GS
T = 25°C
J
0.5
0
f = 1 MHz
0.1
1
10
0
0.3
0.6
0.9
1.2
1.5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
1
100
10
V
GS
= 0 V
t
d(off)
t
d(on)
T = 25°C
J
t
r
1
t
f
V
V
= 4.5 V
= 15 V
GS
DS
I
= 1 A
D
T = 125°C
T = −55°C
J
J
0.1
0.1
1
10
R , GATE RESISTANCE (W)
100
0
0.2
0.4
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.6
0.8
1.0
1.2
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
R
Limit
DS(on)
Thermal Limit
Package Limit
T
C
= 25°C
10 Single Pulse
≤ 10 V
V
GS
1
0.5 ms
1 ms
10 ms
100
0.1
0.1
1
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
www.onsemi.com
4
NVNJWS200N031L
TYPICAL CHARACTERISTICS
100
10
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
1
Single Pulse
0.1
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
TIME (sec)
Figure 12. Thermal Response
Table 1. ORDERING INFORMATION
Part Number
†
Marking
2A
Package
Shipping
NVNJWS200N031LTAG
XDFNW3
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
NVNJWS200N031L
PACKAGE DIMENSIONS
XDFNW3 1x1, 0.65P
CASE 521AC
ISSUE A
www.onsemi.com
6
NVNJWS200N031L
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
onsemi Website: www.onsemi.com
◊
www.onsemi.com
相关型号：
©2020 ICPDF网 联系我们和版权申明