NVRGS055N06CLT1G [ONSEMI]
Single N-Channel Logic Level Power MOSFET 60 V, 5.11 A, 51 mΩ, Small Signal;
| 型号： | NVRGS055N06CLT1G |
| 厂家： | 
ONSEMI |
| 描述： | Single N-Channel Logic Level Power MOSFET 60 V, 5.11 A, 51 mΩ, Small Signal |
| 文件： | 总6页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – Power, Single
N-Channel, Small Signal,
SOT-23
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
70 mW @ 4.5 V
51 mW @ 10 V
60 V
5.11 A
60 V, 5.11 A
Simplified Schematic
N−Channel
NVRGS055N06CL
3
Features
• Low R
DS(on)
• Small Footprint Surface Mount Package
• Trench Technology
1
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
2
Compliant
(Top View)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
3
V
DSS
3
Gate−to−Source Voltage
V
GS
20
V
1
Continuous Drain
Current R
T = 25°C
I
5.11
3.61
2.42
1.21
4.02
2.84
1.50
0.75
116
A
L
D
T55MG
2
q
JL
G
T = 100°C
L
Steady
State
SOT−23
CASE 318
STYLE 21
1
2
Power Dissipation
R
T = 25°C
L
P
W
A
D
Gate
Source
q
JL
T = 100°C
L
T55
M
G
= Device Code
= Date Code
= Pb−Free Package
Continuous Drain
Current R
T = 25°C
A
I
D
q
JA
T = 100°C
A
Steady
State
(Note: Microdot may be in either location)
Power Dissipation
R
T = 25°C
A
P
W
D
q
JA
T = 100°C
A
ORDERING INFORMATION
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
†
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
Device
Package
Shipping
J
stg
+175
NVRGS055N06CLT1G SOT−23 3000 / Tape &
Source Current (Body Diode)
I
S
2.02
260
A
(Pb−Free) Reel
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
°C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Junction−to−Ambient − Steady State
(Note 1)
R
100
°C/W
q
JA
Junction−to−Lead − Steady State
(Notes 1, 2)
R
62
q
JL
2
1. device mounted to 1 inch 1s2p 2 oz copper
2. lead temp is referenced at the top of the drain pin
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
April, 2023 − Rev. 1
NVRGS055N06CL/D
NVRGS055N06CL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
60
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
24
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
T = 25°C
10
mA
DSS
J
V
V
= 0 V,
= 60 V
GS
T = 125°C
J
250
100
DS
Gate−to−Source Leakage Current
I
V
DS
= 0 V, V = 20 V
nA
GSS
GS
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
V
GS
= V , I = 13 mA
1.2
2.2
V
GS(TH)
DS
D
Negative Threshold Temperature
Coefficient
V
/T
−5.5
mV/°C
GS(TH)
J
Drain−to−Source On Resistance
R
V
= 10 V, I = 5 A
35
45
51
70
mW
DS(on)
GS
D
V
GS
= 4.5 V, I = 5 A
D
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
V
= 6 V, I = 5 A
15.2
S
FS
DS
D
C
344
173
5.0
6.1
0.7
1.2
0.7
pF
ISS
V
= 0 V, f = 1 MHz,
GS
Output Capacitance
C
OSS
RSS
V
DS
= 25 V
Reverse Transfer Capacitance
Total Gate Charge
C
Q
nC
ns
V
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Q
G(TH)
V
= 10 V, V = 48 V;
DS
GS
I
D
= 5 A
Q
GS
GD
Q
SWITCHING CHARACTERISTICS, V = V (Note 4)
GS
Turn−On Delay Time
Rise Time
t
5.0
1.6
12
d(ON)
t
r
V
= 10 V, V = 48 V,
DS
GS
I
D
= 5 A, R = 1 W
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
1.7
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
T = 25°C
J
0.89
0.78
1.2
V
= 0 V,
= 5 A
GS
S
I
T = 125°C
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
4. Switching characteristics are independent of operating junction temperatures
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2
NVRGS055N06CL
TYPICAL CHARACTERISTICS
20
20
15
10
V
GS
= 10 V to 4 V
V
DS
= 6 V
3.4 V
15
10
3.0 V
2.8 V
T = 25°C
J
2.6 V
2.4 V
5
0
5
0
T = 125°C
J
T = −55°C
J
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
100
90
80
70
60
50
40
30
20
60
50
T = 25°C
J
T = 25°C
D
J
I
= 5 A
V
= 4.5 V
= 10 V
GS
40
30
V
GS
20
10
10
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
3.0
10000
1000
100
10
T = 175°C
J
V
= 10 V
= 5 A
GS
2.5
2.0
1.5
1.0
T = 150°C
J
I
D
T = 125°C
J
T = 85°C
J
T = 25°C
J
1
0.5
0
0.1
0.01
−50 −25
0
25
50
75
100 125 150 175
5
10 15 20 25 30 35 40 45 50 55 60
, DRAIN−TO−SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
V
DS
J
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVRGS055N06CL
TYPICAL CHARACTERISTICS
1000
100
10
V
= 48 V
DS
9
8
7
6
5
4
3
C
ISS
T = 25°C
J
I
D
= 5 A
C
OSS
Q
Q
GD
GS
10
1
C
RSS
V
= 0 V
GS
2
1
0
T = 25°C
J
f = 1 MHz
0.1
1
10
0
1
2
3
4
5
6
7
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
10
8
100
10
V
GS
= 0 V
t
d(off)
t
d(on)
6
t
f
4
T = 25°C
J
t
r
1
V
V
= 10 V
= 48 V
= 5 A
GS
2
0
DS
I
D
T = 125°C
J
T = −55°C
J
0.1
1
10
R , GATE RESISTANCE (W)
100
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
R
Limit
DS(on)
Thermal Limit
Package Limit
100
10
T
= 25°C
C
Single Pulse
≤ 10 V
0.5 ms
V
GS
1 ms
10 ms
1
0.1
0.1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
NVRGS055N06CL
TYPICAL CHARACTERISTICS
100
10
Duty Cycle = 0.5
0.1
0.2
0.05
0.02
1
0.01
Single Pulse
0.1
0.00001
0.0001
0.001
0.01
TIME (sec)
0.1
1
10
100
Figure 12. Thermal Response
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5
NVRGS055N06CL
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10°
3X
b
L1
VIEW C
e
TOP VIEW
A
H
E
T
c
A1
SEE VIEW C
SIDE VIEW
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
3X
0.90
2.90
3X
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
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