NVTFWS014P04M8LTAG [ONSEMI]
Power MOSFET, Single P-Channel, -40 V, 13.8 mΩ, -49 A;型号: | NVTFWS014P04M8LTAG |
厂家: | ONSEMI |
描述: | Power MOSFET, Single P-Channel, -40 V, 13.8 mΩ, -49 A 脉冲 光电二极管 晶体管 |
文件: | 总8页 (文件大小:299K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – Power, Single,
P-Channel
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
13.8 mW @ −10 V
18.7 mW @ −4.5 V
−40 V
−49 A
-40 V, 13.8 mW, -49 A
P−Channel MOSFET
D (5−8)
NVTFS014P04M8L
Features
Small Footprint (3.3 x 3.3 mm) for Compact Design
Low R
to Minimize Conduction Losses
DS(on)
G (4)
Low Capacitance to Minimize Driver Losses
NVTFWS014P04M8L − Wettable Flanks Product
S (1,2,3)
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR−Free and are RoHS
Compliant
MARKING DIAGRAMS
1
MAXIMUM RATINGS (T = 25C unless otherwise noted)
J
1
S
S
S
G
D
D
D
D
Parameter
Drain−to−Source Voltage
Symbol
Value
−40
Unit
V
XXXX
AYWWG
G
WDFN8
(m8FL)
CASE 511AB
V
DSS
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Current R
I
A
T
= 25C
−49
D
C
q
JC
T
C
= 100C
−35
(Notes 1, 2, 4)
Steady
State
Power Dissipation
P
W
A
T
C
= 25C
61
30
D
R
(Notes 1, 2)
q
JC
XXXX
AYWWG
G
T
C
= 100C
Continuous Drain
I
D
T = 25C
A
−11.3
Current R
q
WDFNW8
(Full−Cut m8FL WF)
JA
T = 100C
A
−8
(Notes 1, 3, 4)
Steady
State
CASE 515AN
Power Dissipation
P
W
T = 25C
A
3.2
1.6
224
D
R
(Notes 1, 3)
q
JA
T = 100C
A
XXXX = Specific Device Code
Pulsed Drain Current
T = 25C, t = 10 ms
I
DM
A
A
Y
= Assembly Location
= Year
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
C
J
stg
WW
G
= Work Week
= Pb−Free Package
+175
Source Current (Body Diode)
I
S
−50
A
(Note: Microdot may be in either location)
Single Pulse Drain−to−Source Avalanche
E
AS
143
mJ
Energy (I
= −6.1 A)
L(pk)
Lead Temperature for Soldering Purposes
T
260
C
L
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
(1/8 from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol
Value
Unit
C/W
Junction−to−Case − Steady State (Drain)
(Notes 1, 2, 4)
R
2.5
q
JC
Junction−to−Ambient − Steady State (Note 3)
R
47
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Assumes heat−sink sufficiently large to maintain constant case temperature
independent of device power.
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
September, 2022 − Rev. 5
NVTFS014P04M8L/D
NVTFS014P04M8L
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = −250 mA
−40
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
21
mV/C
(BR)DSS
Zero Gate Voltage Drain Current
I
T = 25C
−1.0
mA
DSS
J
V
DS
= 0 V,
GS
V
= −40 V
T = 125C
J
−1000
"100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
I
V
= 0 V, V = "20 V
nA
GSS
DS
GS
V
V
= V , I = −420 mA
−1.0
−2.4
V
GS(TH)
GS
DS
D
Negative Threshold Temperature
Coefficient
V
/T
5.1
mV/C
GS(TH)
J
Drain−to−Source On Resistance
R
V
= −10 V, I = −15 A
10
14.6
42
13.8
18.7
mW
S
DS(on)
GS
D
V
GS
= −4.5 V, I = −7.5 A
D
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
FS
V
DS
= −1.5 V, I = −15 A
D
C
1734
682
32
pF
iss
V
= 0 V, f = 1.0 MHz,
GS
Output Capacitance
C
oss
V
DS
= −20 V
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Q
V
= −4.5V
= −10V
12.5
26.5
2.6
nC
nC
G(TOT)
GS
V
I
= −20 V,
= −20 A
DS
D
V
GS
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
G(TH)
Q
5.6
GS
GD
GP
V
GS
= −10 V, V = −20 V,
DS
I
D
= −30 A
Q
V
3.8
3.2
V
SWITCHING CHARACTERISTICS, V = −4.5 V (Note 6)
GS
Turn−On Delay Time
Rise Time
t
11.5
97.4
44.5
38.2
ns
d(on)
t
r
V
= −4.5 V, V = −20 V,
DS
GS
D
I
= −30 A, R = 2.5 W
G
Turn−Off Delay Time
Fall Time
t
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
S
= 0 V,
T = 25C
−0.86
−0.74
34.9
15.8
19.1
16.3
−1.25
V
SD
GS
J
I
= −15 A
T = 125C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
a
V
GS
= 0 V, dI /dt = 100 A/ms,
S
I
S
= −10 A
Discharge Time
b
Reverse Recovery Charge
Q
52
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NVTFS014P04M8L
TYPICAL CHARACTERISTICS
120
100
80
60
40
20
0
120
VGS = 5.5 V to 10 V
V
DS
= −3 V
VGS = 4.8 V
VGS = 4.5 V
VGS = 4.0 V
100
80
60
40
20
0
VGS = 3.6 V
VGS = 3.2 V
VGS = 2.8 V
T = −55C
J
T = 25C
.
J
T = 125C
J
VGS = 2.6 V
VGS = 2.4 V
0
1
2
3
4
5
6
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
−V , GATE−TO−SOURCE VOLTAGE (V)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
32
28
24
20
16
12
8
40
30
20
10
0
T = 25C
J
I
D
= −15 A
V
= −4.5 V
GS
V
GS
= −10 V
4
2
3
4
5
6
7
8
9
10
1
11
21
31
41
51
61
71
81
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
−I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.5
2
1,E−04
V
D
= −10 V
GS
T = 25C
J
I
= −15 A
T = 85C
1,E−05
1,E−06
1,E−07
1,E−08
J
T = 125C
J
T = 150C
J
T = 175C
J
1.5
1
0.5
0
1,E−09
1,E−10
0
5
10
15
20
25
30
35
40
−50 −25
0
25
50
75 100 125 150 175
T , JUNCTION TEMPERATURE (C)
J
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVTFS014P04M8L
TYPICAL CHARACTERISTICS (continued)
10
1,E+04
1,E+03
1,E+02
V
I
= −20 V
9
8
7
6
5
4
3
2
V
J
= −0 V
DS
D
GS
= −30 A
T = 25C
C
f = 1 MHz
ISS
T = 25C
J
C
OSS
Q
GD
Q
GS
C
RSS
C
ISS
C
OSS
1
C
RSS
1,E+01
0
0
5
10
15
20
25
30
0,1
1
10
100
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
50
40
30
20
10
0
1000
100
10
V
= 0 V
GS
V
V
D
= −4.5 V
= −20 V
GS
DS
T = −55C
J
I
= −30 A
T = 25C
J
T = 125C
J
td(on)
tr
td(off)
tf
1
1
10
R , GATE RESISTANCE (W)
100
0
0.2
0.4
0.6
0.8
1
1.2
G
V
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
100
10
1
V
10 V
GS
SINGLE PULSE
= 25C
T
C
T (initial) = 25C
J
10 ms
0.5 ms
1 ms
10 ms
T (initial) = 100C
J
1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
1
10
100
1000
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Dafe operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NVTFS014P04M8L
TYPICAL CHARACTERISTICS (continued)
100
10
Single Pulse
1
Duty Cycle 1%
2%
5%
10%
20%
50%
0.1
0.01
0.000001 0.00001 0.0001 0.001 0.01
0.1
1
10
100
1000
Time (s)
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVTFS014P04M8LTAG
014M
WDFN8
1500 / Tape & Reel
1500 / Tape & Reel
(Pb−Free)
NVTFWS014P04M8LTAG
014W
WDFNW8
(Pb−Free, Wettable Flank)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
1
SCALE 2:1
2X
ISSUE D
DATE 23 APR 2012
NOTES:
0.20
C
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
D
A
B
E
2X
D1
MILLIMETERS
INCHES
NOM
0.030
−−−
0.012
0.20
C
8
1
7
6
5
4
DIM
A
A1
b
c
MIN
0.70
0.00
0.23
0.15
NOM
0.75
−−−
0.30
0.20
MAX
MIN
MAX
0.031
0.002
0.016
0.010
0.80
0.05
0.40
0.25
0.028
0.000
0.009
0.006
4X
q
E1
0.008
D
3.30 BSC
3.05
2.11
3.30 BSC
3.05
1.60
0.30
0.65 BSC
0.41
0.80
0.43
0.130 BSC
0.120
0.083
0.130 BSC
0.120
0.063
0.012
0.026 BSC
0.016
0.032
0.017
0.005
0.059
−−−
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
2.95
1.98
3.15
2.24
0.116
0.078
0.124
0.088
c
2
3
A1
TOP VIEW
2.95
1.47
0.23
3.15
1.73
0.40
0.116
0.058
0.009
0.124
0.068
0.016
0.10
0.10
C
C
A
C
6X
e
0.012
0.026
0.012
0.002
0.055
0
0.020
0.037
0.022
0.008
0.063
0.30
0.65
0.30
0.06
1.40
0
0.51
0.95
0.56
0.20
1.60
SEATING
PLANE
0.13
1.50
−−−
DETAIL A
SIDE VIEW
DETAIL A
q
12
12
_
_
_
_
8X b
0.10
0.05
C
C
A
B
SOLDERING FOOTPRINT*
8X
e/2
0.42
0.65
4X
L
4X
0.66
PITCH
1
8
4
5
PACKAGE
OUTLINE
K
E2
M
E3
3.60
L1
D2
G
2.30
BOTTOM VIEW
0.57
0.47
0.75
GENERIC
MARKING DIAGRAM*
2.37
3.46
1
XXXXX
DIMENSION: MILLIMETERS
AYWWG
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
G
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON30561E
WDFN8 3.3X3.3, 0.65P
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFNW8 3.3x3.3, 0.65P (Full−Cut m8FL WF)
CASE 515AN
ISSUE O
DATE 25 AUG 2020
GENERIC
MARKING DIAGRAM*
XXXX = Specific Device Code
*This information is generic. Please refer to
A
Y
= Assembly Location
= Year
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
XXXX
AYWWG
G
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON24556H
WDFNW8 3.3x3.3, 0.65P (Full−Cut m8FL WF)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
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© Semiconductor Components Industries, LLC, 2018
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