NVTJD4001NT2G [ONSEMI]

双 N 沟道，小信号 MOSFET，30V，250mA，1.5Ω;


型号：	NVTJD4001NT2G
厂家：	ONSEMI
描述：	双 N 沟道，小信号 MOSFET，30V，250mA，1.5Ω
文件：	总5页 (文件大小：72K)
中文：	中文翻译
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NTJD4001N, NVTJD4001N

Small Signal MOSFET

30 V, 250 mA, Dual N−Channel, SC−88

Features

• Low Gate Charge for Fast Switching

• Small Footprint − 30% Smaller than TSOP−6

• ESD Protected Gate

www.onsemi.com

TYP

I Max

• AEC Q101 Qualified − NVTJD4001N

• These Devices are Pb−Free and are RoHS Compliant

(BR)DSS

DS(on)

1.0 W @ 4.0 V

1.5 W @ 2.5 V

250 mA

30 V

Applications

• Low Side Load Switch

• Li−Ion Battery Supplied Devices − Cell Phones, PDAs, DSC

• Buck Converters

• Level Shifts

SOT−363

SC−88 (6 LEADS)

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Drain−to−Source Voltage

Symbol

Value Units

DSS

Gate−to−Source Voltage

Continuous Drain

Current (Note 1)

Steady T = 25 °C

250

180

272

State

T = 85 °C

Top View

Power Dissipation

(Note 1)

Steady T = 25 °C

State

MARKING DIAGRAM &

PIN ASSIGNMENT

D1 G2 S2

Pulsed Drain Current

t =10 ms

600

Operating Junction and Storage Temperature

T , T

−55 to

150

°C

STG

Source Current (Body Diode)

250

260

TE M G

SOT−363

CASE 419B

STYLE 26

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

°C

THERMAL RESISTANCE RATINGS (Note 1)

S1 G1 D2

Parameter

Symbol

Value

458

Unit

= Device Code

= Date Code

= Pb−Free Package

Junction−to−Ambient − Steady State

Junction−to−Lead − Steady State

°C/W

252

(Note: Microdot may be in either location)

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

1. Surface mounted on FR4 board using min pad size

(Cu area = 0.155 in sq [1 oz] including traces).

†

Device

NTJD4001NT1G

Package

Shipping

SOT−363

(Pb−Free)

3000 / Tape &

Reel

NVTJD4001NT1G SOT−363

(Pb−Free)

3000 / Tape &

Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Publication Order Number:

May, 2015 − Rev. 7

NTJD4001N/D

NTJD4001N, NVTJD4001N

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

= 0 V, I = 100 mA

(BR)DSS

Drain−to−Source Breakdown Voltage

Temperature Coefficient

mV/ °C

(BR)DSS

Zero Gate Voltage Drain Current

Gate−to−Source Leakage Current

= 0 V, V = 30 V

1.0

DSS

= 0 V, V

= 10 V

GSS

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

= V , I = 100 mA

0.8

1.2

1.5

GS(TH)

Gate Threshold Temperature

Coefficient

−3.2

mV/ °C

GS(TH)

Drain−to−Source On Resistance

= 4.0 V, I = 10 mA

1.0

1.5

2.5

DS(on)

= 2.5 V, I = 10 mA

Forward Transconductance

= 3.0 V, I = 10 mA

CHARGES AND CAPACITANCES

Input Capacitance

= 0 V, f = 1.0 MHz,

1.3

ISS

= 5.0 V

Output Capacitance

OSS

RSS

Reverse Transfer Capacitance

Total Gate Charge

7.25

0.9

0.2

0.3

0.2

= 5.0 V, V = 24 V,

G(TOT)

GS DS

= 0.1 A

Threshold Gate Charge

Gate−to−Source Charge

Gate−to−Drain Charge

G(TH)

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

Rise Time

= 4.5 V, V = 5.0 V,

(ON)

= 10 mA, R = 50 W

Turn−Off Delay Time

Fall Time

(OFF)

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

= 0 V,

T = 25°C

0.65

0.45

12.4

0.7

I = 10 mA

T = 125°C

Reverse Recovery Time

= 0 V, dI /dt = 8.0 A/ms,

I = 10 mA

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

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NTJD4001N, NVTJD4001N

TYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted)

0.2

0.18

0.16

0.14

0.12

0.1

= 10 V to 3 V

T = 25°C

= 5 V

= 2.75 V

0.08

0.06

0.04

2.5 V

2.25 V

T = 125°C

0.08

0.06

0.04

2 V

25°C

0.02

1.75 V

1.5 V

0.02

T = −55°C

0.4

0.8

1.2

1.6

1.2

1.4

1.6

1.8

2.2

, GATE−TO−SOURCE VOLTAGE (VOLTS)

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

1.25

1.0

1.25

1.0

= 10 V

T = 25°C

T = 125°C

= 4.5 V

= 10 V

0.75

T = 25°C

0.5

T = −55°C

0.25

0.005

0.055

0.105

0.155

0.005

0.055

0.105

0.155

0.205

DRAIN CURRENT (AMPS)

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

Figure 3. On−Resistance vs. Drain Current and

Temperature

10000

1000

= 0.01 A

= 0 V

1.8

1.6

1.4

1.2

= 10 V

0.8

0.6

0.4

T = 150°C

100

T = 125°C

0.2

−50

−25

100

125 150

T , JUNCTION TEMPERATURE (°C)

DS,

DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 5. On−Resistance Variation with

Temperature

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

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NTJD4001N, NVTJD4001N

TYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted)

T = 25°C

= 0 V

iss

rss

iss

oss

rss

= 0.1 A

T = 25°C

0.2

0.4

0.6

0.8

Q , TOTAL GATE CHARGE (nC)

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 8. Gate−to−Source Voltage vs. Total

Gate Charge

Figure 7. Capacitance Variation

0.1

= 0 V

T = 25°C

0.08

0.06

0.04

0.02

0.5

0.55

0.6

0.65

0.7

0.75

, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 9. Diode Forward Voltage vs. Current

1000

100

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

0.0001

0.000001 0.00001

0.001

0.01

0.1

100

1000

PULSE TIME t,(s)

Figure 10. Thermal Response

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NTJD4001N, NVTJD4001N

PACKAGE DIMENSIONS

SC−88/SC70−6/SOT−363

CASE 419B−02

ISSUE W

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.

MILLIMETERS

DIM MIN NOM MAX

0.80

INCHES

NOM MAX

1.10 0.031 0.037 0.043

0.10 0.000 0.002 0.004

0.008 REF

MIN

0.95

0.05

A1 0.00

0.20 REF

0.21

0.14

2.00

1.25

0.65 BSC

0.20

2.10

−E−

0.10

1.80

1.15

0.30 0.004 0.008 0.012

0.25 0.004 0.005 0.010

2.20 0.070 0.078 0.086

1.35 0.045 0.049 0.053

0.026 BSC

0.10

2.00

0.30 0.004 0.008 0.012

2.20 0.078 0.082 0.086

b 6 PL

0.2 (0.008)

STYLE 26:

PIN 1. SOURCE 1

2. GATE 1

3. DRAIN 2

4. SOURCE 2

5. GATE 2

6. DRAIN 1

SOLDERING FOOTPRINT*

0.50

0.0197

0.65

0.025

0.65

0.025

0.40

0.0157

1.9

0.0748

inches

SCALE 20:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and the

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.

SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed

at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation

or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and

specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets

and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each

customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,

or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which

the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or

unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim

alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

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Phone: 81−3−5817−1050

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Order Literature: http://www.onsemi.com/orderlit

Literature Distribution Center for ON Semiconductor

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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

For additional information, please contact your local

Sales Representative

NTJD4001N/D

www.onsemi.com

NVTJD4001NT2G [ONSEMI]

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