NVVR26A120M1WST [ONSEMI]
Silicon Carbide (SiC) Module - EliteSiC Power Module for Traction Inverter, Single-Side Cooling, 2.6mΩ Rds_on, 1200V, Half-Bridge, 90° Power Tabs ;
| 型号： | NVVR26A120M1WST |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) Module - EliteSiC Power Module for Traction Inverter, Single-Side Cooling, 2.6mΩ Rds_on, 1200V, Half-Bridge, 90° Power Tabs |
| 文件： | 总12页 (文件大小：505K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
Module – EliteSiC Power
Module for Traction Inverter,
Single-Side Cooling,
2.6 mohm Rds_on,
AHPM15−CDA MODULE
CASE MODHG
1200 V, Half-Bridge,
905 Power Tabs
NVVR26A120M1WST
MARKING DIAGRAM
ZZZ
ATYWW
K2R261T
NNNNNNN
BOTTOM SIDE
Product Description
The NVVR26A120M1WST is part of the EliteSiC power module
for traction inverter, a revolutionary high mobility compound
semiconductor product family that offers increased performance,
better efficiency, and higher power density in similar and highly
compatible packaging solutions. The module integrates 1200 V SiC
MOSFET in a half−bridge configuration. To enhance reliability
and thermal performance, sintering technology is applied for die
attach. The module is designed to meet the AQG324 standard.
ZZZ
= Assembly Lot Code
K2R261T = Marking Value
AT
Y
WW
NNNN
= Assembly & Test Location
= Year
= Work Week
= Serial Number
Features
PIN CONFIGURATION
• Ultra Low R
DS(on)
P
• Aluminum Nitride Isolator
• Ultra−low Stray Inductance ~ 7.1 nH
D1
G1
S1
• T
= 175°C for Continuous Operation
vj.Max
NTC1
• Automotive Grade SiC MOSFET Chip Technologies
• Sintered Die Technology for High Reliability Performance
• Automotive Module AQG324 Compliant
• PPAP Capable
NTC_COM
NTC2
AC
D2
G2
S2
Applications
• Automotive EV/HEV− Traction Inverter
N
ORDERING INFORMATION
Device
NVVR26A120M1WST
Package
Shipping
Tube
A1HPM
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
NVVR26A120M1WST/D
February, 2023 − Rev. 3
NVVR26A120M1WST
P
D1
G1
S1
NTC1
NTC_COM
NTC2
AC
D2
G2
S2
N
Figure 1. Pin Description
PIN FUNCTION DESCRIPTIONS
Pin No.
Pin Name
N
Pin Functional Description
1
2
Negative Power Terminal
Positive Power Terminal
P
3
D1
High Side MOSFET (Q1) Drain Sense
No Connection
4
N/C
5
S1
High Side MOSFET (Q1) Source
High Side MOSFET (Q1) Gate
No Connection
6
G1
7
N/C
8
N/C
No Connection
9
AC
Phase Output
10
11
12
13
14
NTC1
S2
NTC 1
Low Side MOSFET (Q2) Source
Low Side MOSFET (Q2) Gate
NTC 2
G2
NTC2
NTC_COM
NTC common
15
D2
Low Side MOSFET (Q2) Drain Sense
Materials
Flammability Information
All materials present in the power module meet UL
flammability rating class 94V−0
DBC Substrate: AlN isolated substrate, basic isolation,
and copper on both sides
Lead frame:
Copper, with tin electro−plating
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2
NVVR26A120M1WST
MODULE CHARACTERISTICS (T = 25°C, Unless Otherwise Specified)
vj
Symbol
Parameter
Rating
−40 to 175
−40 to 125
4200
7.1
Unit
°C
T
vj
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage (AC, 50 Hz, 5 s)
Stray Inductance
T
STG
°C
V
ISO
V
Ls
DS
nH
mW
g
R
Module Lead Resistance, Terminal to Chip
Module Weight
0.3
’
’
DD +SS
G
48
CTI
Comparative Tracking Index
>600
5.0
−
Creepage
Clearance
M
Minimum: Terminal to Terminal
mm
mm
Nm
Minimum: (Note 1) Terminal to Terminal
M5 DIN 439B Screws for Module Terminals, Max. Torque
3.2
2.2
1. Verified by design/characterization, not tested.
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless Otherwise Specified)
vj
Symbol
Parameter
Rating
1200
Unit
V
V
Drain−Source Voltage
Gate−Source Voltage
DS
GS
DS
V
+25/−10
400
V
I
Continuous DC Current, V = 20 V, T = 175°C, T = 65°C @ 10LPM, using
A
GS
vj
F
Ref. Heatsink (Note 2)
Pulsed Drain−Source Current, V = 20 V, limited by T
vj.Max
I
I
800
270
A
A
DS.pulsed
GS
I
DC Current in Body Diode, V = −5 V, T = 175°C, T = 65°C @ 10LPM, using
SD.BD
GS
vj
F
Ref. Heatsink (Note 2)
Pulsed Body Diode Current, V =−5 V, limited by T
800
A
SD.pulsed
GS
vj.Max
Ptot
Total Power Dissipation T = 175°C, T = 65°C, Ref. Heatsink (typ)
vj.Max F
1000
W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. Verified by design / not by test.
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3
NVVR26A120M1WST
MOSFET CHARACTERISTICS (T = 25°C, Unless Otherwise Specified)
vj
Parameter
Conditions
= 20V, I = 400A
Min
Typ
Max
Unit
R
Drain−to−Source On Resistance
(Terminal)
V
GS
T = 25°C
vj
T = 175°C
vj
−
2.6
4.6
−
mW
DS(ON)
D
V
Gate Threshold Voltage
Forward Transconductance
Total Gate Charge
V
V
V
= V , I = 150 mA
2.1
−
3.2
170
1.75
2.1
−
−
−
−
−
−
−
V
S
GS(TH)
GS
DS
GS
DS
D
g
fs
= 10 V, I = 400 A
D
Q
= −5/+20 V, V = 800 V, I = 400 A
−
mC
W
G
DS
D
R
Internal Gate Resistance
Input Capacitance
−
g.int
C
V
DS
= 800 V, V = 0 V, f = 100 kHz
−
31.7
2.2
nF
nF
nF
mA
iss
GS
C
Output Capacitance
−
oss
C
Reverse Transfer Capacitance
Zero Gate Voltage Drain Current
−
0.22
rss
I
V
V
= 0 V, V = 1200 V
T = 25°C
vj
vj
−
−
13.1
250
−
DSS
GS
DS
T
= 175°C
I
Gate−Source Leakage Current
= 20/−5 V, V = 0 V
700
nA
ns
GSS
GS
DS
T
d.on
Turn On Delay, Inductive Load
I
= 400 A,
DS
V
DS
V
GS
= 800 V,
T
T
= 25°C
−
−
−
−
125
115
−
vj
= +20/−5 V,
Rg.on = 3 W
= 175°C
vj
T
r
Rise Time, Inductive Load
Turn Off Delay, Inductive Load
Fall Time, Inductive Load
I
= 400 A,
ns
ns
ns
mJ
DS
V
DS
V
GS
= 800 V,
T
T
= 25°C
59
54
−
−
−
vj
= +20/−5 V,
Rg.on = 3W
= 175°C
vj
T
d.off
I
= 400 A,
DS
V
DS
V
GS
= 800 V,
T
T
= 25°C,
= 175°C
220
228
vj
= +20/−5 V,
Rg.off = 1 W
vj
T
f
I
= 400 A,
DS
V
DS
V
GS
= 800 V,
T
T
= 25°C
51
61
vj
= +20/−5 V,
Rg.off = 1 W
= 175°C
vj
E
ON
Turn−On Switching Loss (including
diode reverse recovery loss)
I
= 400 A,
di/dt = 8.4 A/ns,
= 25°C
DS
V
DS
V
GS
= 800 V,
T
26
28
vj
= +20/−5 V,
di/dt = 9.7 A/ns,
T = 175°C
vj
−
−
Ls = 17 nH,
Rg.on = 3W
E
Turn−Off Switching Loss
I
V
V
= 400A,
dv/dt = 19.8 V/ns,
= 25°C
mJ
J
OFF
DS
= 800 V,
T
14
17
DS
GS
vj
= +20/−5 V,
dv/dt = 16.8 V/ns,
T = 175°C
vj
−
−
−
−
Ls =17 nH,
Rg.off = 1 W
E
Short Circuit Energy Withstand
V
= 20 V, V = 800 V
T
= 25°C
12
11
sc
GS
DS
vj
T
= 175°C
vj
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4
NVVR26A120M1WST
BODY DIODE CHARACTERISTICS (T = 25°C, Unless Otherwise Specified)
vj
Parameters
Conditions
= −5 V, I = 400 A
Min
Typ
Max
Unit
V
SD
Diode Forward Voltage
(Terminal)
V
GS
T = 25°C
vj
vj
−
3.8
3.3
−
V
SD
T
= 175°C
E
rr
Reverse Recovery Energy
I
V
V
= 400 A,
= 800 V,
GS
di/dt = 8.4 A/ns,
= 25°C
mJ
SD
R
T
0.4
2.1
vj
= −5 V,
di/dt = 9.7 A/ns,
−
−
Ls = 17 nH,
Rg.on = 3 W
T
vj
= 175°C
Q
Recovered Charge
I
V
V
= 400 A,
= 800 V,
GS
mC
RR
SD
R
T
= 25°C
2.3
8.6
vj
= −5 V,
−
−
−
−
Rg.on = 3 W
T
vj
= 175°C
I
Peak Reverse Recovery Current
I
= 400 A,
= 800 V,
A
RR
SD
V
V
T
vj
= 25°C
527
650
R
= −5 V,
GS
Rg.on = 3 W
T
vj
= 175°C
NTC SENSOR CHARACTERISTICS (T = 25°C, Unless Otherwise Specified)
vj
Parameters
Rated Resistance
Deviation of R100
Power Dissipation
B−Value
Conditions
Min
−
Typ
10
Max
−
Unit
kW
%
R25
DR/R
P25
Tc = 25°C
Tc = 100°C, R100 = 877 W
Tc = 25°C
−3
−
−
+3
−
125
+1%
mW
K
B25/85
R = R25 exp [B25/85 (1/T−1/298)]
−1%
3610
THERMAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
0.028
R
FET Junction to Case
−
0.025
°C/W
th,J−C
Rth, Junction to Fluid, 10 L/min, 65°C, 50/50 EGW,
Ref. Heatsink
R
FET Junction to Fluid
−
0.11
−
°C/W
th,J−F
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NVVR26A120M1WST
TYPICAL CHARACTERISTICS
800
700
600
500
400
300
200
100
0
2.0
V
GS
= 20 V
V
GS
= 20 V
1.8
1.6
1.4
1.2
1.0
175°C
150°C
25°C
−40°C
150°C
175°C
−40°C
25°C
0.8
0.6
0
0.5
1
1.5
2
2.5
3
3.5
4
0
100
200
300
400
500
600
700 800
V
DS
, DRAIN−SOURCE VOLTAGE (V)
I
DS
, DRAIN−SOURCE CURRENT (A)
Figure 2. Output Characteristics
Figure 3. Normalized On−state Resistance vs.
Drain Current
2.0
1.8
1.6
1.4
1.2
1.0
0.8
800
700
600
500
400
300
200
100
0
V
DS
= 20 V
V
= 20 V
= 400 A
GS
I
175°C
DS
150°C
25°C
−40°C
−50
0
50
100
150
200
0
2
4
6
8
10
12
14
16
T , VIRTUAL JUNCTION TEMPERATURE (°C)
vj
V
, GATE−SOURCE VOLTAGE (V)
GS
Figure 4. Normalized On−state Resistance vs.
Figure 5. Transfer Characteristic
Temperature
800
700
600
500
400
300
200
100
0
800
700
600
500
400
300
200
100
0
V
GS
= 0 V
V
GS
= 20 V
175°C
150°C
25°C
25°C
−40°C
150°C
175°C
−40°C
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
5
V
SD
, SOURCE−DRAIN VOLTAGE (V)
V
SD
, SOURCE−DRAIN VOLTAGE (V)
Figure 6. 3rd Quadrant Characteristic at
GS = 20 V
Figure 7. 3rd Quadrant Characteristic at
VGS = 0 V
V
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NVVR26A120M1WST
TYPICAL CHARACTERISTICS
4
3.8
3.6
3.4
3.2
3
800
700
600
500
400
300
200
100
0
V
= −5 V
GS
V
= V
DS
= 150 mA
GS
I
D
175°C
150°C
25°C
2.8
2.6
−40°C
2.4
2.2
2
−50
0
50
, VIRTUAL JUNCTION TEMPERATURE (°C)
VJ
100
150
200
2
3
4
5
6
1000
600
V
SD
, SOURCE−DRAIN VOLTAGE (V)
T
Figure 8. 3rd Quadrant Characteristic at
Figure 9. Gate Threshold Voltage vs.
Temperature
V
GS = −5 V
100000
10000
1000
80
70
60
50
40
30
20
10
0
T
= 25°C
= −5/+20 V
= 800 V
= 3/1 W
vj
V
R
C
GS
iss
V
DS
g.on/off
C
oss
E
on
C
E
off
rss
f = 100 kHz
V
T
= 0 V
= 25°C
GS
vj
100
0.1
1
10
100
100
200
300
400
500
600
V
DS
, DRAIN−SOURCE VOLTAGE (V)
I
, DRAIN−SOURCE CURRENT (A)
DS
Figure 10. Typical Capacitance vs.
Figure 11. Switching Energies at 255C
Drain−Source Voltage
3.5
3
80
70
60
50
40
30
20
10
0
V
GS
= 20/−5 V
= 800 V
T
= 175°C
vj
V
R
V
= −5/+20 V
GS
V
R
= 3 W
g.on
= 800 V
DS
2.5
2
R
= 3/1 W
g.on/off
175°C
E
on
1.5
1
E
off
25°C
0.5
0
100
200
300
400
500
600
100
200
300
400
500
I
, DRAIN−SOURCE CURRENT (A)
I
, DRAIN−TO−SOURCE CURRENT (A)
DS
SD
Figure 12. Switching Energies at 1755C
Figure 13. Reverse Recovery Energy vs.
Drain−Source Current
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NVVR26A120M1WST
TYPICAL CHARACTERISTICS
3
55
50
45
40
35
30
25
20
15
10
5
T
= 25°C
V
= 20/−5 V
= 800 V
= 400 A
vj
GS
E
on
V
= 20/−5 V
V
R
GS
175°C
2.5
2
V
DS
= 800 V
= 400 A
I
SD
I
DS
E
off
1.5
1
25°C
0.5
0
0
2
3
4
5
6
7
8
9
10
2
3
4
5
6
7
8
9
10
R , EXTERNAL GATE RESISTOR (W)
g
R , EXTERNAL GATE RESISTOR (W)
g
Figure 14. Switching Energies vs. External
Gate Resistor
Figure 15. Reverse Recovery Energy vs
External Gate Resistor
300
200
100
0
0.12
0.1
i:
R
t
1
2
3
4
[K/W]:0.007 0.037 0.040 0.029
thj−f
th
[s]:
0.007 0.038 0.455 6.167
T
d(off)
d(on)
Rth.j−f 65°C @ 10 LPM 50/50 EGW
Ref. Heatsink, Typical
T = 25°C
GS
vj
0.08
0.06
0.04
0.02
0
V
= 20/−5 V
V
DS
= 800 V
Rg.on/off = 3/1 W
T
T
f
Rth.j−c
i:
1
2
3
4
R
[K/W]:0.00110.0043 0.0185 0.0011
0.00002 0.0005 0.0097 0.0198
thj−c
T
r
t
th
[s]:
100
200
300
400
500
600
1E−03
10E−03
100E−03
1E+00
10E+00
t, TIME (s)
I
, DRAIN−SOURCE CURRENT (A)
DS
Figure 17. Typical Thermal Impedance
Figure 16. Timing Characteristics vs.
Drain−Source Current
1400
1200
1000
800
900
800
700
600
500
400
300
200
100
0
I
D
= 6 mA
Module
Chip
600
400
V
= 20/−5 V
GS
Rg.off = 1 W
= 175°C
T
VJ
−40 −20
0
20 40 60 80 100 120 140 160 180
0
200
400
600
800 1000 1200
1400
T , VIRTUAL JUNCTION TEMPERATURE (°C)
vj
V
DS
, DRAIN−SOURCE VOLTAGE (V)
Figure 18. MOSFET Breakdown Voltage vs.
TVJ
Figure 19. MOSFET RBSOA of Chip and
Module
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NVVR26A120M1WST
TYPICAL CHARACTERISTICS
35
30
25
20
15
10
5
20
V
= 800 V
= 400 A
= 25°C
DS
I
DS
15
10
5
T
vj
0
−5
0
0
25
50
75
100
125
150
0
0.25
0.5
0.75
1
1.25
1.5
1.7
TEMPERATURE (°C)
Q , TOTAL GATE CHARGE (mC)
g
Figure 20. NTC Resistance vs. Temperature
Figure 21. Gate Charge vs. Gate−Source
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
AHPM15−CDA MODULE
CASE MODHG
ISSUE B
DATE 22 SEP 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON23821H
AHPM15−CDA MODULE
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
AHPM15−CDA MODULE
CASE MODHG
ISSUE A
DATE 22 SEP 2021
GENERIC
MARKING DIAGRAM*
ZZZ = Assembly Lot Code
AT
Y
= Assembly & Test Location
= Year
WW = Work Week
NNNN= Serial Number
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON23821H
AHPM15−CDA MODULE
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
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