NZ8DH27VMXWT5G [ONSEMI]
Dual Diode Zener Protection;
| 型号： | NZ8DH27VMXWT5G |
| 厂家： | 
ONSEMI |
| 描述： | Dual Diode Zener Protection |
| 文件： | 总5页 (文件大小：163K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Zener Protection Diode
NZ8DH Series
The NZ8DH devices are designed for applications requiring
transient overvoltage ESD protection. They are intended to protect
voltage sensitive components from ESD and other harmful transient
voltage events. This device provides a single channel of bidirectional
protection in an, ultra−compact XDFNW2 1.0 x 0.6 mm package. This
device is ideal to replace SOT23 or other dual diode 3 pin devices used
as single line bi−directional protection.
XDFNW2
CASE 521AE
DEVICE MARKING INFORMATION
XX M
Features
• Precise Clamping Voltage
• High ESD Ratings
XX = Specific Device Code
• Wettable Flank Package for optimal Automated Optical Inspection
M
= Date Code
(AOI)
• 175°C TJ(MAX) – Rated for High Temperature, Mission Critical
Applications
ORDERING INFORMATION
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
†
Device
Package Shipping
NZ8DHxxxxMXWT5G
SZNZ8DHxxxxMXWT5G
XDFNW2 8000 / Tape
(Pb−Free)
& Reel
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Typical Applications
• Automotive ECU’s
• In Vehicle Networking (IVN)
• Voltage Sensitive Circuits
MAXIMUM RATINGS
Rating
IEC 61000-4-2 Contact (Note 1)
IEC 61000-4-2 Air
Symbol Value Unit
ESD
30
30
kV
kV
kV
ISO 10605 Contact (330 pF / 330 W)
≤ 9.1 V
> 9.1 V
30
26
ISO 10605 Contact (330 pF / 2 kW)
ISO 10605 Contact (150 pF / 2 kW)
30
30
kV
kV
A
Maximum Peak Pulse Current (8/20 ms) (Note 2)
Ipp
4.5
Total Power Dissipation (Note 3 @ T = 25°C
P
q
300
400
mW
°C/W
A
D
JA
Thermal Resistance, Junction-to-Ambient
R
Junction and Storage Temperature Range
T , T
−55 to
°C
J
stg
+175
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Non-repetitive current pulse at TA = 25°C, per IEC61000-4-2 waveform.
2. Non-repetitive current pulse per figure 1.
3. Mounted with recommended minimum pad size, DC board FR-4
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
November, 2022 − Rev. 1
NZ8DH2V4MXW/D
NZ8DH Series
ELECTRICAL CHARACTERISTICS
A
I
(T = 25_C unless otherwise noted)
I
PP
Symbol
Parameter
I
Maximum Reverse Peak Pulse Current (8/20 ms)
PP
I
T
I
V V
R
BR RWM
V
Clamping Voltage @ I
V
C
C
PP
V
I
V
V
V
R
T
RWM BR C
V
RWM
Working Peak Reverse Voltage
I
I
R
Maximum Reverse Leakage Current @ V
RWM
VBR
Breakdown Voltage @ I
Test Current
T
I
PP
I
T
Bi−Directional
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
Figure 1.
ELECTRICAL CHARACTERISTICS (TA = 25_C unless otherwise noted)
V
BR
C(pF) Typ @
= 0 V,
I = 5 mA (Note 4)
T
@
Device
I
R
(mA) Max
V Typ
C
V
R
Marking
Min
3.00
Max
3.60
V
@ I = 1.0 A
f = 1 MHz
60
55
54
50
48
45
42
40
38
36
35
32
30
28
25
23
22
20
19
18
18
17
16
14
12
12
10
8
Device*
V
Max
RWM
PP
RWM
†
†
†
†
†
†
†
†
†
†
†
†
†
†
NZ8DH2V4
NZ8DH2V7
NZ8DH3V0
NZ8DH3V3
NZ8DH3V6
NZ8DH3V9
NZ8DH4V3
NZ8DH4V7
NZ8DH5V1
NZ8DH5V6
NZ8DH6V2
NZ8DH6V8
NZ8DH7V5
NZ8DH8V2
1
50
3.70
4.00
1
1
1
1
1
1
1
3.28
3.92
20
10
10
10
5
3.55
4.25
4.30
3.82
4.58
4.60
4.10
4.91
4.90
4.37
5.23
5.20
4.73
5.67
5
5.60
5.10
6.10
2
6.10
1.5
5.46
6.54
2
6.50
2.5
3
5.92
7.09
1
7.10
6.46
7.74
1
7.70
3.5
4
7.01
8.39
0.5
0.5
0.5
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
8.40
7.64
9.16
9.20
5
8.28
9.92
9.90
AA
NZ8DH9V1MXWT5G
6
9.30
10.70
11.66
12.73
13.80
14.87
17.01
18.08
20.22
22.36
24.50
26.64
29.85
36.27
51.25
10.90
11.90
13.00
14.10
15.20
17.40
18.50
20.70
22.90
25.10
27.30
30.70
37.30
52.70
†
NZ8DH10V
7
10.14
11.07
12.00
12.93
14.79
15.72
17.58
19.44
21.30
23.16
25.95
31.53
44.55
†
NZ8DH11V
8
†
NZ8DH12V
9
†
NZ8DH13V
10
11
12
14
15.4
16.8
18.9
22
26
38
†
NZ8DH15V
†
NZ8DH16V
†
NZ8DH18V
†
NZ8DH20V
†
NZ8DH22V
†
NZ8DH24V
A5
A6
A7
NZ8DH27VMXWT5G
NZ8DH33VMXWT5G
NZ8DH47VMXWT5G
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Includes SZ prefix where applicable: SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable.
†Consult factory on availability.
4. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1.
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2
NZ8DH Series
TYPICAL CHARACTERISTICS
100
80
100
T = 25°C
A
0 V Bias
1 V Bias
60
10
40
20
0
1
0
25
50
75
100
125
150
5
15
25
35
45
TEMPERATURE (°C)
V , NOMINAL ZENER VOLTAGE (V)
Z
Figure 2. Steady State Power Derating
Figure 3. Typical Capacitance
0.1
0.01
100
10
1
T = 25°C
A
+150°C
0.001
+25°C
−55°C
0.0001
0.1
0.00001
0.01
5
10
15
20
25
30
35
40
45
50
5
10
15
20
25
30
35
40
45 50
V , NOMINAL ZENER VOLTAGE (V)
Z
V , ZENER VOLTAGE (V)
Z
Figure 4. Typical Leakage Current
Figure 5. Zener Voltage vs. Zener Current
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
XDFNW2 1.0x0.6, 0.65P
CASE 521AE
ISSUE A
SCALE 8:1
DATE 24 AUG 2021
GENERIC
MARKING DIAGRAM*
XXM
XX = Specific Device Code
M
= Date Code
*This information is generic. Please refer
to device data sheet for actual part
marking. Pb−Free indicator, “G”, may
or not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON33477H
XDFNW2 1.0X0.6, 0.65P
PAGE 1 OF 1
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