NZF220TT1G [ONSEMI]
EMI Filter with ESD Protection;
| 型号： | NZF220TT1G |
| 厂家： | 
ONSEMI |
| 描述： | EMI Filter with ESD Protection |
| 文件： | 总5页 (文件大小：185K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NZF220TT1
EMI Filter with ESD
Protection
Features:
• EMI/RFI Bi−directional “Pi” Low−Pass Filters
• ESD Protection Meets IEC61000−4−2
• Diode Capacitance: 7 − 10 pF
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• Zener/Resistor Line Capacitance: 22 20% pF
• Low Zener Diode Leakage: 1 mA Maximum
• Zener Breakdown Voltage; 6 − 8 Volts
• Pb−Free Package is Available
CIRCUIT DESCRIPTION
1
2
Benefits:
3
• Designed to Suppress EMI/RFI Noise in Systems Subjected to
Electromagnetic Interference
MARKING
DIAGRAM
• Small Package Size Minimizes Parasitic Inductance, Thus a More
“Ideal” Low Pass Filtering Response
3
2
1
Applications:
X6 M G
SC−75
CASE 463
STYLE 4
• Cellular Phones
G
• Communication Systems
• Computers
1
X6
M
G
= Device Code
= Date Code*
= Pb−Free Package
• Portable Products with Input/Output Conductors
MAXIMUM RATINGS
(Note: Microdot may be in either location)
Rating
Symbol
Value
Unit
*Date Code orientation may vary depending
upon manufacturing location.
Peak Power Dissipation (Note 1)
P
PK
14
W
8 × 20 ms Pulse
Maximum Junction Temperature
T
J
150
°C
ORDERING INFORMATION
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. All diodes under power
†
Device
NZF220TT1
NZF220TT1G
Package
Shipping
SC−75
3000/Tape & Reel
3000/Tape & Reel
SC−75
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
March, 2006 − Rev. 3
NZF220TT1/D
NZF220TT1
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
6.0
N/A
N/A
7.0
17.6
90
Typ
−
Max
8.0
1.0
1.25
10
Unit
V
Zener Breakdown Voltage, @ I = 1 mA
V
Z
ZT
Zener Leakage Current, @ V = 3 V
I
r
−
mA
V
R
Zener Forward Voltage, @ I = 50 mA
V
F
−
F
Zener Internal Capacitance, @ 0 V Bias
Zener/Resistor Array Line Capacitance
Resistance
C
−
pF
pF
W
C
−
26.4
110
−
R
−
Cutoff Frequency
F
(Note 2)
−
220
MHz
C
2. 50 W Source and 50 W Lead Termination per Figure 2
Applications Information
Suppressing Noise at the Source
• Filter all I/O signals leaving the noisy environment
• Locate I/O driver circuits close to the connector
• Use the longest rise/fall times possible for all digital signals
Reducing Noise at the Receiver
• Filter all I/O signals entering the unit
• Locate the I/O filters as close as possible to the connector
Minimizing Noise Coupling
• Use multilayer PCBs to minimize power and ground inductance
• Keep clock circuits away from the I/O connector
• Ground planes should be used whenever possible
• Minimize the loop area for all high speed signals
• Provide for adequate power decoupling
ESD Protection
• Locate the suppression devices as close to the I/O connector as possible
• Minimize the PCB trace length to the suppression device
• Minimize the PCB trace length for the ground return for the suppression device
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2
NZF220TT1
Frequency Response Specification
TRACKING
GENERATOR
SPECTRUM
ANALYZER
50 W
TG OUTPUT
RF INPUT
NZF220T
50 W
V
G
V
in
V
out
TEST BOARD
Test Conditions:
NZF220T
Source Impedance = 50 W
Load Impedance = 50 W
Input Power = 0 dB
Figure 1. Measurement Conditions
−6.3
Y
OUTPUT
3 dB = 220 MHz
Y
−50
1.0
10
100
1000 3000
f, FREQUENCY (MHz)
Figure 2. Typical EMI Filter Response
(50 W Source and 50 W Lead Termination)
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463−01
ISSUE G
3
2
1
DATE 07 AUG 2015
SCALE 4:1
NOTES:
−E−
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2
MILLIMETERS
DIM MIN NOM MAX
0.70
A1 0.00
INCHES
NOM MAX
MIN
3
e
−D−
A
0.80
0.05
0.90 0.027 0.031 0.035
0.10 0.000 0.002 0.004
0.30 0.006 0.008 0.012
0.25 0.004 0.006 0.010
1.65 0.061 0.063 0.065
0.90 0.027 0.031 0.035
0.04 BSC
1
b
C
D
E
e
0.15
0.10
1.55
0.70
0.20
0.15
1.60
0.80
1.00 BSC
0.15
b 3 PL
0.20 (0.008)
M
D
0.20 (0.008) E
H
E
L
0.10
1.50
0.20 0.004 0.006 0.008
1.70 0.060 0.063 0.067
H
1.60
E
C
A
GENERIC
MARKING DIAGRAM*
L
A1
XX M
G
STYLE 1:
STYLE 2:
STYLE 3:
PIN 1. BASE
PIN 1. ANODE
2. N/C
PIN 1. ANODE
2. ANODE
2. EMITTER
3. COLLECTOR
1
3. CATHODE
3. CATHODE
XX
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
STYLE 4:
STYLE 5:
PIN 1. CATHODE
2. CATHODE
3. ANODE
PIN 1. GATE
2. SOURCE
3. DRAIN
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB15184C
SC−75/SOT−416
PAGE 1 OF 1
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