NZQA14VAXV5T1 [ONSEMI]
20W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE, LEAD FREE, CASE 463B-01, SMT, 5 PIN;
| 型号： | NZQA14VAXV5T1 |
| 厂家： | 
ONSEMI |
| 描述： | 20W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE, LEAD FREE, CASE 463B-01, SMT, 5 PIN 局域网 光电二极管 电视 |
| 文件： | 总4页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NZQA5V6AXV5 Series
Low Capacitance
Quad Array for
ESD Protection
This integrated transient voltage suppressor device (TVS) is
designed for applications requiring transient overvoltage protection. It
is intended for use in sensitive equipment such as computers, printers,
business machines, communication systems, medical equipment, and
other applications. Its integrated design provides very effective and
reliable protection for four separate lines using only one package.
These devices are ideal for situations where board space is at a
premium.
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1
2
3
5
4
Features
• ESD Protection: IEC61000−4−2: Level 4
MILSTD 883C − Method 3015−6: Class 3
• Four Separate Unidirectional Configurations for Protection
• Low Leakage Current < 1 mA @ 3 Volts
SOT−553
CASE 463B
PLASTIC
• Power Dissipation: 380 mW
• Small SOT−553 SMT Package
• Low Capacitance
• Complies to USB 1.1 Low Speed & High Speed Specifications
• These are Pb−Free Devices
MARKING DIAGRAM
Benefits
xx M G
• Provides Protection for ESD Industry Standards: IEC 61000, HBM
• Protects Four Lines Against Transient Voltage Conditions
• Minimize Power Consumption of the System
• Minimize PCB Board Space
G
xx
M
= Device Code
= Date Code*
Typical Applications
G
= Pb−Free Package
(Note: Microdot may be in either location)
• Instrumentation Equipment
• Serial and Parallel Ports
• Microprocessor Based Equipment
• Notebooks, Desktops, Servers
• Cellular and Portable Equipment
ORDERING INFORMATION
†
Device
Package
Shipping
NZQA5V6AXV5T1
SOT−553* 4000/Tape & Reel
NZQA5V6AXV5T1G SOT−553* 4000/Tape & Reel
NZQA6V8AXV5T1 SOT−553* 4000/Tape & Reel
NZQA6V8AXV5T1G SOT−553* 4000/Tape & Reel
NZQA6V8AXV5T3 SOT−553* 16000/Tape & Reel
NZQA6V8AXV5T3G SOT−553* 16000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*This package is inherently Pb−Free.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
February, 2006 − Rev. 5
NZQA5V6AXV5/D
NZQA5V6AXV5 Series
ELECTRICAL CHARACTERISTICS
I
(T = 25°C unless otherwise noted)
A
I
F
Symbol
Parameter
I
Maximum Reverse Peak Pulse Current
PP
V
Clamping Voltage @ I
PP
C
V
V V
BR RWM
V
Working Peak Reverse Voltage
C
RWM
V
I
V
R
T
F
I
Maximum Reverse Leakage Current @ V
I
R
RWM
V
Breakdown Voltage @ I
Test Current
BR
T
I
T
QV
Maximum Temperature Coefficient of V
Forward Current
I
BR
BR
PP
I
F
Uni−Directional
V
Forward Voltage @ I
F
F
Z
Maximum Zener Impedance @ I
Reverse Current
ZT
ZT
ZK
I
ZK
Z
Maximum Zener Impedance @ I
ZK
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Value
20
Unit
Peak Power Dissipation (8 X 20 ms @ T = 25°C) (Note 1)
P
W
A
PK
Steady State Power − 1 Diode (Note 2)
P
380
mW
D
Thermal Resistance, Junction−to−Ambient
Above 25°C, Derate
R
q
JA
327
3.05
°C/W
mW/°C
Maximum Junction Temperature
T
150
−55 to +150
260
°C
°C
°C
Jmax
Operating Junction and Storage Temperature Range
Lead Solder Temperature (10 seconds duration)
T T
J stg
T
L
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (T = 25°C)
A
Typ Capacitance Typ Capacitance
Breakdown Voltage
@ 1 mA (Volts)
Leakage Current
@ 0 V Bias (pF)
@ 3 V Bias (pF)
V
I
@ V
(Note 3)
(Note 3)
V
Max @ I
PP
BR
RM
RM
C
Device
Marking
Min
5.3
Nom
5.6
Max
5.9
V
I
(mA)
V
(V)
I (A)
PP
Typ
13
Max
17
Typ
7.0
6.7
Max
11.5
9.5
Device
RWM
RWM
C
NZQA5V6AXV5
NZQA6V8AXV5
5P
6H
3.0
1.0
1.0
13
13
1.6
1.6
6.47
6.8
7.14
4.3
12
15
1. Non−repetitive current per Figure 1.
2. Only 1 diode under power. For all 4 diodes under power, P will be 25%. Mounted on FR−4 board with min pad.
D
3. Capacitance of one diode at f = 1 MHz, V = 0 V, T = 25°C
R
A
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2
NZQA5V6AXV5 Series
TYPICAL ELECTRICAL CHARACTERISTICS − NZQA6V8AXV5
100
110
100
90
80
70
60
50
40
30
20
10
10
0
1
0
25
50
75
100
125
150
1
10
100
1000
t, TIME (ms)
T , AMBIENT TEMPERATURE (°C)
A
Figure 2. Power Derating Curve
Figure 1. Pulse Width
0.16
0.14
0.12
0.10
0.08
0.06
0.04
14
12
10
8
T = 25°C
A
6
4
2
0
0.02
0
−60 −40 −20
0
20
40
60
80
100
0
1
2
3
4
5
6
T, TEMPERATURE (°C)
BIAS VOLTAGE (V)
Figure 3. Reverse Leakage versus
Temperature
Figure 4. Capacitance
1
100
90
PEAK VALUE I
@ 8 ms
t
RSM
r
PULSE WIDTH (t ) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
P
80
70
60
50
40
30
20
0.1
HALF VALUE I
/2 @ 20 ms
RSM
0.01
t
P
10
0
T = 25°C
A
0.001
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
20
40
60
80
V , FORWARD VOLTAGE (V)
F
t, TIME (ms)
Figure 6. Forward Voltage
Figure 5. 8 × 20 ms Pulse Waveform
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3
NZQA5V6AXV5 Series
PACKAGE DIMENSIONS
SOT−553, 5 LEAD
CASE 463B−01
ISSUE B
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
A
−X−
L
5
4
3
E
−Y−
H
E
MILLIMETERS
INCHES
NOM
0.022
0.009
0.005
1
2
DIM
A
b
c
D
E
MIN
0.50
0.17
0.08
1.50
1.10
NOM
0.55
MAX
MIN
MAX
0.024
0.011
0.007
0.067
0.051
0.60
0.27
0.18
1.70
1.30
0.020
0.007
0.003
0.059
0.043
0.22
b 5 PL
c
0.13
e
1.60
0.063
0.047
M
0.08 (0.003)
X Y
1.20
e
L
0.50 BSC
0.20
1.60
0.020 BSC
0.008
0.063
0.10
1.50
0.30
1.70
0.004
0.059
0.012
0.067
H
E
STYLE 2:
PIN 1. CATHODE
2. COMMON ANODE
3. CATHODE 2
4. CATHODE 3
5. CATHODE 4
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.0
0.0394
1.35
0.0531
0.5
0.5
0.0197 0.0197
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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PUBLICATION ORDERING INFORMATION
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For additional information, please contact your
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NZQA5V6AXV5/D
相关型号：
NZQA14VXV5T1
100W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE, LEAD FREE, PLASTIC, CASE 463B-01, 5 PIN
ONSEMI
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