P6SMB43AT3G [ONSEMI]

600 Watt Peak Power Zener Transient Voltage Suppressors; 600瓦峰值功率齐纳瞬态电压抑制器
P6SMB43AT3G
元器件型号: P6SMB43AT3G
生产厂家: ON SEMICONDUCTOR    ON SEMICONDUCTOR
描述和应用:

600 Watt Peak Power Zener Transient Voltage Suppressors
600瓦峰值功率齐纳瞬态电压抑制器

PDF文件: 总7页 (文件大小:168K)
下载文档:  下载PDF数据表文档文件
型号参数:P6SMB43AT3G参数
是否Rohs认证 符合
生命周期Obsolete
包装说明R-PDSO-C2
Reach Compliance Codecompliant
ECCN代码EAR99
HTS代码8541.10.00.50
风险等级5.6
其他特性EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE, UL RECOGNIZED
最大击穿电压45.2 V
最小击穿电压40.9 V
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码DO-214AA
JESD-30 代码R-PDSO-C2
最大非重复峰值反向功率耗散600 W
元件数量1
端子数量2
最高工作温度150 °C
最低工作温度-65 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性UNIDIRECTIONAL
最大功率耗散0.55 W
认证状态Not Qualified
最大重复峰值反向电压36.8 V
表面贴装YES
技术ZENER
端子形式C BEND
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1
MAX34334CSE前5页PDF页面详情预览
P6SMB6.8AT3G Series,
SZP6SMB6.8AT3G Series
600 Watt Peak Power Zener
Transient Voltage
Suppressors
Unidirectional*
The SMB series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SMB series is supplied in
ON Semiconductor’s exclusive, cost-effective, highly reliable
SURMETIC
package and is ideally suited for use in
communication systems, automotive, numerical controls, process
controls, medical equipment, business machines, power supplies and
many other industrial/consumer applications.
Specification Features:
http://onsemi.com
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
5.8−171 VOLTS
600 WATT PEAK POWER
SMB
CASE 403A
PLASTIC
Working Peak Reverse Voltage Range
5.8 to 171 V
Standard Zener Breakdown Voltage Range
6.8 to 200 V
Peak Power
600 W @ 1 ms
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5
mA
Above 10 V
UL 497B for Isolated Loop Circuit Protection
Response Time is Typically < 1 ns
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
Pb−Free Packages are Available**
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic
FINISH:
All external surfaces are corrosion resistant and leads are
Cathode
Anode
MARKING DIAGRAM
AYWW
xx
G
G
A
Y
WW
xx
G
= Assembly Location
= Year
= Work Week
= Device Code (Refer to page 3)
= Pb−Free Package
readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
(Note: Microdot may be in either location)
260C for 10 Seconds
LEADS:
Modified L−Bend providing more contact area to bond pads
POLARITY:
Cathode indicated by polarity band
MOUNTING POSITION:
Any
ORDERING INFORMATION
Device
P6SMBxxxAT3G
SZP6SMBxxxAT3G
Package
SMB
(Pb−Free)
SMB
(Pb−Free)
Shipping
2,500 /
Tape & Reel
2,500 /
Tape & Reel
*Please see P6SMB11CAT3 to P6SMB91CAT3 for Bidirectional devices.
**For additional information on our Pb−Free strategy and soldering details,
please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
February, 2012
Rev. 12
1
Publication Order Number:
P6SMB6.8AT3/D
P6SMB6.8AT3G Series, SZP6SMB6.8AT3G Series
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1) @ T
L
= 25C, Pulse Width = 1 ms
DC Power Dissipation @ T
L
= 75C Measured Zero Lead Length (Note 2)
Derate Above 75C
Thermal Resistance from Junction−to−Lead
DC Power Dissipation (Note 3) @ T
A
= 25C
Derate Above 25C
Thermal Resistance from Junction−to−Ambient
Forward Surge Current (Note 4) @ T
A
= 25C
Operating and Storage Temperature Range
Symbol
P
PK
P
D
R
qJL
P
D
R
qJA
I
FSM
T
J
, T
stg
Value
600
3.0
40
25
0.55
4.4
226
100
−65
to +150
Unit
W
W
mW/C
C/W
W
mW/C
C/W
A
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000
ms,
non−repetitive
2. 1 square copper pad, FR−4 board
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted, V
F
= 3.5 V Max. @
I
F
(Note 4) = 30 A) (Note 5)
Symbol
I
PP
V
C
V
RWM
I
R
V
BR
I
T
QV
BR
I
F
V
F
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
Maximum Temperature Coefficient of V
BR
Forward Current
Forward Voltage @ I
F
I
PP
V
C
V
BR
V
RWM
I
R
V
F
I
T
V
I
F
I
5. 1/2 sine wave or equivalent, PW = 8.3 ms, non−repetitive
duty cycle
Uni−Directional TVS
http://onsemi.com
2
P6SMB6.8AT3G Series, SZP6SMB6.8AT3G Series
ELECTRICAL CHARACTERISTICS
V
RWM
(Note 6)
V
5.8
6.4
7.02
7.78
8.55
10.2
11.1
12.8
13.6
15.3
17.1
18.8
20.5
23.1
25.6
28.2
30.8
33.3
36.8
40.2
43.6
47.8
53
58.1
64.1
70.1
77.8
85.5
94
102
111
128
136
154
I
R
@
V
RWM
mA
1000
500
200
50
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Breakdown Voltage
V
BR
V
(Note 7)
Min
6.45
7.13
7.79
8.65
9.5
11.4
12.4
14.3
15.2
17.1
19
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
48.5
53.2
58.9
64.6
71.3
77.9
86.5
95
105
114
124
143
152
171
Nom
6.8
7.51
8.2
9.1
10
12
13.05
15.05
16
18
20
22
24
27.05
30
33.05
36
39.05
43.05
47.05
51.05
56
62
68
75.05
82
91
100
110.5
120
130.5
150.5
160
180
Max
7.14
7.88
8.61
9.55
10.5
12.6
13.7
15.8
16.8
18.9
21
23.1
25.2
28.4
31.5
34.7
37.8
41
45.2
49.4
53.6
58.8
65.1
71.4
78.8
86.1
95.5
105
116
126
137
158
168
189
@ I
T
mA
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
C
@ I
PP
(Note 8)
V
C
V
10.5
11.3
12.1
13.4
14.5
16.7
18.2
21.2
22.5
25.2
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
64.8
70.1
77
85
92
103
113
125
137
152
165
179
207
219
246
I
PP
A
57
53
50
45
41
36
33
28
27
24
22
20
18
16
14.4
13.2
12
11.2
10.1
9.3
8.6
7.8
7.1
6.5
5.8
5.3
4.8
4.4
4.0
3.6
3.3
2.9
2.7
2.4
QV
BR
%/C
0.057
0.061
0.065
0.068
0.073
0.078
0.081
0.084
0.086
0.088
0.09
0.092
0.094
0.096
0.097
0.098
0.099
0.1
0.101
0.101
0.102
0.103
0.104
0.104
0.105
0.105
0.106
0.106
0.107
0.107
0.107
0.108
0.108
0.108
C
typ
(Note 9)
pF
2380
2180
2015
1835
1690
1435
1335
1175
1110
1000
910
835
775
700
635
585
540
500
460
425
395
365
335
305
280
260
235
215
200
185
170
150
140
130
Device*
P6SMB6.8AT3G
P6SMB7.5AT3G
P6SMB8.2AT3G
P6SMB9.1AT3G
P6SMB10AT3G
P6SMB12AT3G
P6SMB13AT3G
P6SMB15AT3G
P6SMB16AT3G
P6SMB18AT3G
P6SMB20AT3G
P6SMB22AT3G
P6SMB24AT3G
P6SMB27AT3G
P6SMB30AT3G
P6SMB33AT3G
P6SMB36AT3G
P6SMB39AT3G
P6SMB43AT3G
P6SMB47AT3G
P6SMB51AT3G
P6SMB56AT3G
P6SMB62AT3G
P6SMB68AT3G
P6SMB75AT3G
P6SMB82AT3G
P6SMB91AT3G
P6SMB100AT3G
P6SMB110AT3G
P6SMB120AT3G
P6SMB130AT3G
P6SMB150AT3G
P6SMB160AT3G
P6SMB180AT3G
Device
Marking
6V8A
7V5A
8V2A
9V1A
10A
12A
13A
15A
16A
18A
20A
22A
24A
27A
30A
33A
36A
39A
43A
47A
51A
56A
62A
68A
75A
82A
91A
100A
110A
120A
130A
150A
160A
180A
P6SMB200AT3G
200A
171
5
190
200
210
1
274
2.2
0.108
115
6. A transient suppressor is normally selected according to the working peak reverse voltage (V
RWM
), which should be equal to or greater than
the DC or continuous peak operating voltage level.
7. V
BR
measured at pulse test current I
T
at an ambient temperature of 25C.
8. Surge current waveform per Figure 2 and derate per Figure 3.
9. Bias Voltage = 0 V, F = 1 MHz, T
J
= 25C
* Include SZ-prefix devices where applicable.
http://onsemi.com
3
P6SMB6.8AT3G Series, SZP6SMB6.8AT3G Series
100
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 2
10
t
r
10
ms
100
VALUE (%)
PEAK VALUE - I
PP
I
HALF VALUE -
PP
2
PULSE WIDTH (t
P
) IS DEFINED AS
THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50% OF
I
PP
.
PP, PEAK POWER (kW)
1
50
t
P
0.1
0.1
ms
1
ms
10
ms
100
ms
1 ms
10 ms
0
0
1
2
t, TIME (ms)
3
4
5
t
P
, PULSE WIDTH
Figure 1. Pulse Rating Curve
Figure 2. Pulse Waveform
160
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT @ T = 25
C
A
140
10,000
P6SMB6.8AT3G
C, CAPACITANCE (pF)
1000
P6SMB18AT3G
100
P6SMB51AT3G
120
100
80
60
40
20
0
0
25
50
75
100
125
150
10
P6SMB200AT3G
T
J
= 25C
f = 1 MHz
1
10
100
1000
1
T
A
, AMBIENT TEMPERATURE (C)
BIAS VOLTAGE (VOLTS)
Figure 3. Pulse Derating Curve
Figure 4. Typical Junction Capacitance vs.
Bias Voltage
TYPICAL PROTECTION CIRCUIT
Z
in
V
in
LOAD
V
L
http://onsemi.com
4
P6SMB6.8AT3G Series, SZP6SMB6.8AT3G Series
APPLICATION NOTES
Response Time
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitive
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 5.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 6. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. The SMB series have
a very good response time, typically < 1 ns and negligible
inductance. However, external inductive effects could
produce unacceptable overshoot. Proper circuit layout,
minimum lead lengths and placing the suppressor device as
close as possible to the equipment or components to be
protected will minimize this overshoot.
Some input impedance represented by Z
in
is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
Duty Cycle Derating
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 7. Average power must be derated as the lead or
ambient temperature rises above 25C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 7 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10
ms
pulse. However, when the derating factor for a
given pulse of Figure 7 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.
V
in
(TRANSIENT)
V
L
V
V
in
(TRANSIENT)
V
L
V
OVERSHOOT DUE TO
INDUCTIVE EFFECTS
V
in
t
d
t
D
= TIME DELAY DUE TO CAPACITIVE EFFECT
t
t
Figure 5.
1
0.7
0.5
DERATING FACTOR
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
10
ms
0.1 0.2
0.5
1
2
5
10
D, DUTY CYCLE (%)
20
Figure 6.
PULSE WIDTH
10 ms
1 ms
100
ms
50 100
Figure 7. Typical Derating Factor for Duty Cycle
http://onsemi.com
5
相关元器件产品Datasheet PDF文档

P6SMB43ATR13LEADFREE

Trans Voltage Suppressor Diode, 600W, 36.8V V(RWM), Unidirectional, 1 Element, Silicon,
暂无信息
1 CENTRAL

P6SMB43C

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
暂无信息
21 PANJIT

P6SMB43C

Surface Mount Transient Voltage Suppressor
暂无信息
20 TSC

P6SMB43CA

BI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 600 WATTS, 6.8 THRU 200 VOLTS
暂无信息
38 CENTRAL

P6SMB43CA

Surface Mount Transient Voltage Suppressor
暂无信息
25 TSC

P6SMB43CA

600W Surface Mount Transient Voltage Suppressors
暂无信息
12 WEITRON
    P6SMB43AT3G
    描述和应用

    600 Watt Peak Power Zener Transient Voltage Suppressors
    600瓦峰值功率齐纳瞬态电压抑制器

    总7页 (168K) ON SEMICONDUCTOR
    ON SEMICONDUCTOR
    第一页预览: